Coated WC powders by sputtered nanostructured Ni and stainless steel

The efficiency of the powder surface modification depends on their surface characteristics. Sputtering has been revealing an important skill for the coating of powders with metal and metal alloys, with important consequences on the surface properties. However, some modifications in the holder of this particulate substrate have obliged to set up some changes in a non-conventional sputtering system. The aim of the present work is to demonstrate the efficiency of the prototype developed and the influence of deposition parameters in the quality of coated powders; tungsten carbide powders and austenitic stainless steel (SS) and nickel targets have been selected. These types of materials are used in tungsten carbide parts/devices as binders to promote the technological process; as coatings they decrease the interparticle friction reducing the pressure of shape forming as well as the temperature of sintering process.     

Effect of processing conditions on microstructure and electrical characteristics of Ni thin films

Ni thin films with an intermediate layer of Cr were prepared by using dc magnetron sputtering under different conditions. Effects of deposition temperature, post-deposition annealing on the microstructure and the electrical characteristics were investigated. The relationship between film microstructure and its resistivity was analyzed. It was found that the crystal grains aggregated into large ones when the deposition temperature reached or exceeded 150 °C. This could be explained that high deposition temperature conduced high activation energy, which increased surface mobility of the adatoms. Annealing treatments resulted in the densification of the films. Resistivity of the films strongly depended on grain size and crystallinity. The influence of Cr intermediate layer on the resistivity was also discussed. Compared to annealing treatment, the deposition temperature exhibited larger controlling effect on film resistivity.     

Size dependent optical characteristics of chemically deposited nanostructured ZnS thin films

ZnS thin films of different thicknesses were prepared by chemical bath deposition using thiourea and zinc acetate as S²⁻ and Zn²⁺ source. The effect of film thickness on the optical and structural properties was studied. The optical absorption studies in the wavelength range 250–750 nm show that band gap energy of ZnS increases from 3·68–4·10 eV as thickness varied from 332–76 nm. The structural estimation shows variation in grain size from 6·9–17·8 nm with thickness. The thermoemf measurement indicates that films prepared by this method are of n-type.     

Comparative study on the characteristics of network and continuous Ni films

Ni films were deposited on anodic aluminum oxide (AAO) and SiO₂/Si(100) substrates at 300 K by direct current magnetron sputtering with the oblique target. The film thickness was 80 nm, 160 nm and 260 nm. The films grown on AAO substrates have a network structure while those deposited on SiO₂/Si(100) substrates are continuous. The network film consists of granules and is formed by granule connection. The granule consists of many fine grains. The granule size increases with increasing film thickness. The 80 nm-thick network film has a honeycomb-like structure. The continuous films grow with a columnar structure and the transverse size of columnar grains increases with increasing film thickness. All the network films show a Ni(111) diffraction peak while the 160 nm- and 260 nm-thick continuous films exhibit the Ni(111) and Ni(200) diffraction peaks. The network films have higher coercivity and residual magnetization ratio compared with the continuous films. The coercivity and the residual magnetization ratio increase with increasing film thickness for the network films while they are almost independent of the film thickness for the continuous films. A temperature dependence of the resistance within 5-200 K reveals that the 80 nm-thick network Ni film exhibits markedly a minimal resistance at about 40 K. A logarithmic temperature dependence of the conductance is verified at temperatures below 40 K. The temperature coefficient of resistance is smallest for the 80 nm-thick network film and is largest for the 260 nm-thick continuous film.     

Ellipsometric study of nanostructured carbon films deposited by pulsed laser deposition

When depositing carbon films by plasma processes the resulting structure and bonding nature strongly depends on the plasma energy and background gas pressure. To produce different energy plasma, glassy carbon targets were ablated by laser pulses of different excimer lasers: KrF (248 nm) and ArF (193 nm). To modify plume characteristics argon atmosphere was applied. The laser plume was directed onto Si substrates, where the films were grown. To evaluate ellipsometric measurements first a combination of the Tauc-Lorentz oscillator and the Sellmeier formula (TL/S) was applied. Effective Medium Approximation models were also used to investigate film properties. Applying argon pressures above 10 Pa the deposits became nanostructured as indicated by high resolution scanning electron microscopy. Above ~ 100 and ~ 20 Pa films could not be deposited by KrF and ArF laser, respectively. Our ellipsometric investigations showed, that with increasing pressure the maximal refractive index of both series decreased, while the optical band gap starts with a decrease, but shows a non monotonous course. Correlation between the size of the nanostructures, bonding structure, which was followed by Raman spectroscopy and optical properties were also investigated.     

Thermoelectric properties of nanostructured Al-substituted ZnO thin films

ZnO:Al nano-polycrystalline thin films were deposited by radio-frequency magnetron sputtering on glass substrates. The analysis of the morphology reveals well-connected whiskers with a preferred c-axis orientation perpendicular to the substrate and a dense columnar grain structure. The as-deposited films exhibited a low electrical resistivity of 1 × 10^− 3 Ω cm. Annealing in air produces an increase of the resistivity by more than three orders of magnitude and an increase in the absolute value of the Seebeck coefficient proportional to the resistivity. Annealing of the as-deposited sample in reducing Ar/H₂ atmosphere leads to a decrease in both the resistivity and the absolute value of the Seebeck coefficient. The change in the electrical transport properties is caused by the absorption and desorption of oxygen. Both resistivity and Seebeck coefficient recover to their initial values during annealing of the air-treated sample in reducing Ar/H₂ atmosphere, indicating a reversible process. The analysis by transmission electron microscopy after annealing reveals a stable columnar grain structure with an increase of the grain size. The increase in grain size is larger when the sample is annealed in reducing rather than in oxidising atmosphere. In summary, the reducing Ar/H₂ atmosphere was found to be advantageous for the thermoelectric properties resulting in a maximum power factor of 0.3 mW/K²m at 800 K.     

GdFeCo非晶薄膜磁温度特性

本文以分子场理论为依据,通过实验数据的拟合和分析计算,计算了GdFeCo非晶薄膜饱和磁化强度、交换常数、磁各向异性常数的温度特性,并分析了薄膜成分变化对补偿温度、居里温度等的影响规律,为GdFeCo薄膜在新型磁光存储技术中的应用提供了理论依据.     

Fabrication of Ni electrode films by sintering Ni nanoparticle pastes: Compositional dependence of specific resistance and optimal composition

Ultra-thin nickel films are essential for the internal electrodes of the high density multi-layered ceramic capacitors (MLCCs) used in a variety of electronic devices. In this study, Ni electrode films were fabricated by sintering Ni nanoparticle pastes prepared by mechanically stirring mixtures of Ni nanoparticles (d = 40–150 nm), dispersant, binder, and solvent. Paste compositions were varied by using three solvents, two binders, one dispersant, and different amounts of nickel nanoparticles. In total 36 pastes and electrode films were prepared. The electrode film defects such as voids in films and exfoliation (film loss due to lack of adhesion to substrate) were noted, and film thicknesses and specific resistances (ρ) were measured. Voids were observed in all samples whereas exfoliations were observed only for several samples. Ni electrode film thicknesses and ρ values ranged from 2 to 7 μm and from 10⁻⁵ to 10⁻⁴ Ω cm, respectively, depending on paste composition. Based on considerations of ρ values, an optimal composition was determined. Of the three solvents and two binders used, terpineol and EC produced better quality films with lower ρ values and without exfoliation, suggesting that they are probably the most suitable for fabricating internal electrodes for high density MLCCs.     

基片表面粗糙度对坡莫合金AMR以及磁性能的影响

利用霍尔离子源轰击Si基片获得了不同表面粗糙度的基片,然后利用磁控溅射方法制备了一系列Ta(5nm)/Ni 80Fe 20(12nm)/Ta(2nm)薄膜样品,重点研究了基片表面粗糙度对薄膜结构和各向异性磁阻效应的影响。采用AFM测量基片的表面粗糙度,采用四探针法测量薄膜的各向异性磁阻效应。研究结果表明,随着基片表面粗糙度的增加,坡莫合金的AMR值显著降低,且ΔH显著增加。     

Impact of epitaxial strain on the ferromagnetic transition temperature of SrRuO3 thin films

Epitaxially strained SrRuO₃ films were grown on SrTiO₃, DyScO₃, and NdGaO₃ oxide substrates using liquid-delivery metal-organic chemical vapour deposition. Temperature dependent resistivity measurements showed a shift in the Curie temperature (T_C) of the ferromagnetic phase transition which is suggested to be caused by the incorporated elastic lattice strain in the films. T_C increased with tensile and decreased with compressive strain, which was inferred from high resolution x-ray diffraction measurements of the in-plane and out-of-plane lattice parameters.     

Solvent effects on properties of metallo-organic derived Ni/NiO thin films

Ni/NiO thin films for potential uses in batteries, fuel cells, sensors and supercapacitors were prepared by metallo-organic decomposition technique, using a unique solvent system of propionic acid (PPA) and amylamine (AA), in 0.5-2.0 molar ratios and 1 M Ni acetate precursor solute. This mixed solvent system exhibits ionic molecular clusters in solution, with nickel ions forming square planar coordinate complexes with the carboxylate groups, leading to easy film formation on spin coating at 3000 rpm and densification below 350 °C. Nano-sized (~ 50 nm), high surface area, low resistive (~ 600 nΩ m) Ni/NiO thin films were developed at a molar ratio of 1:1 AA/PPA using this methodology.     

Ni3Al基高温合金添加碳化物质点的探索研究

在较成熟的Ｎｉ３Ａｌ基高温合金成分的基础上，探索了研究了用特殊的方法添国了ＴｉＣ质点的工艺方法，并观察了组织变化及Ｔｉ质点的分布特征。结果表明，通过对工艺及合金成分的调整，ＴｉＣ质点能够均匀地分布在ＩＣ６合金的组织中，这为提高ＩＣ６合金的性能提供了可能性，同时还讨论了工艺实施过程中所暴露出的主要问题。     

磁控共溅射Ni3 Al合金薄膜的微观结构及电阻特性

研究了室温下采用直流磁控共溅射法在抛光玻璃和Si基底上沉积Ni3Al合金薄膜的制备工艺、微观结构和电阻特性.采用SEM、EDX、AFM、TEM等测试分析了不同基底、溅射功率、工作气压等因素对薄膜微观结构、成分比和电阻特性的影响.结果表明:采用大功率混合溅射可以得到多晶态Ni3Al纳米合金薄膜,且呈多层岛状生长.所得薄膜具有良好的导电性,与玻璃相比,在Si基底上的薄膜表面光滑平整,晶粒更小,电阻率略大.然而随着厚度的减小,薄膜的电阻率增加迅速,发生金属向绝缘体过渡的相变,而厚度较大时这种现象不明显,这表明Ni3Al薄膜相变与厚度及晶格中氧含量有关.     

溅射Ni和Ni/Al对SiC陶瓷真空钎焊性能的影响

本工作采用磁控溅射的方法在SiC陶瓷表面分别溅射Ni薄膜和Ni/Al双层薄膜,然后将表面改性的SiC陶瓷片用真空钎焊的方法制备了以Al为钎料的钎焊接头,研究了表面溅射Ni和Ni/Al对SiC真空钎焊接头界面结合的影响。结果表明,表面溅射Ni薄膜的SiC钎焊接头平均剪切强度为69.4 MPa,表面溅射Ni/Al薄膜的SiC钎焊接头平均剪切强度为113.8 MPa,均高于未改性处理的SiC钎焊接头的平均剪切强度(48.4 MPa),其原因在于SiC表面溅射沉积Ni和Ni/Al薄膜,一方面能够避免脆性反应相Al₄C₃的生成对界面结合强度的降低,另一方面有助于改善铝钎料对SiC陶瓷表面的润湿。另外,相比于溅射单层Ni薄膜,采用Ni/Al双层薄膜改性的SiC钎焊接头,由于界面生成的强化相Al₃Ni分布更为集中,起到了“锚定”钎缝的作用,使接头剪切强度得到了更大的提高。     

镍包碳纤维填充导电橡胶薄膜的制备及性能

采用喷涂法制备了镍包碳纤维(CF@Ni)填充型柔性导电橡胶薄膜,探究了球形Ni粉颗粒对导电橡胶流动性及导电性的影响,研究了导电CF@Ni/橡胶薄膜的抗折叠性能以及薄膜与铝合金基体之间黏附强度。结果表明:以CF@Ni为主掺杂少量球形Ni的复合填料所制备的导电橡胶薄膜,电阻率在10-1Ω·cm级别;且随Ni粉增加,其电阻率不发生显著变化,但液态导电CF@Ni/橡胶流动性明显提高;喷涂获得的薄膜在0.2 MPa压力经100次折叠周期后,其导电性无明显下降;喷涂薄膜与铝合金基体之间的黏附强度约为0.219 MPa。所制备的导电CF@Ni/橡胶薄膜具有良好的导电性和抗折叠性能,导电橡胶薄膜中CF@Ni起主要导电作用,球形Ni粉不影响薄膜导电性,但在喷涂过程中有"润滑"作用,提高了喷涂效率。     

低温退火对电沉积纳米晶Ni镀层耐蚀性的影响

通过脉冲电沉积方法制备纳米晶Ni镀层。采用浸泡法和电化学方法研究了不同温度低温退火纳米晶Ni镀层在3.5wt.%NaCl和5wt.%HCl溶液中的腐蚀行为。结果表明:150℃以下退火,晶粒未出现明显长大。在3.5wt.%NaCl溶液中,镀层耐蚀性随退火温度的升高而提高;200℃退火后镀层的耐蚀性最好,镀层表面均有钝化现象。在5wt.%HCl溶液中,退火后镀层的耐蚀性有所提高,但退火温度的影响不大,镀层腐蚀过程中未观察到钝化现象。     

Atomic and electronic structure of both perfect and nanostructured Ni(111) surfaces: First-principles calculations

In this study, we perform first principles simulations on both atomically smooth and nanostructured Ni(111) slabs. The latter contains periodically distributed nickel nanoclusters atop a thin metal film gradually growing from adatoms and serving as a promising catalyst. Applying the generalized gradient approximation within the formalism of the density functional theory we compare the atomic and electronic structures of Ni bulk, as well as both perfect and nanostructured (111) surfaces obtained using two different ab initio approaches: (i) the linear combination of atomic orbitals and (ii) the projector augmented plane waves. The most essential inter-atomic forces between the Ni adatoms upon the substrate have been found to be formed via: (i) attractive pair-wise interactions, (ii) repulsive triple-wise interactions within a triangle and (iii) attractive triple-wise interactions within a line between the nearest adatoms. The attractive interactions surmount the repulsive forces, hence resulting in the formation of stable clusters from Ni adatoms. The magnetic moment and the effective charge (within both Mulliken and Bader approaches) of the outer atoms in Ni nanoparticles increase as compared to those for the smooth Ni(111) surface. The calculated electronic charge redistribution in the Ni nanoclusters features them as possible adsorption centers with increasing catalytic activity, e.g., for further synthesis of carbon nanotubes.     

Temperature dependence of the band gap, refractive index and single-oscillator parameters of amorphous indium selenide thin films

InSe thin films are obtained by evaporating InSe crystal onto ultrasonically cleaned glass substrates under pressure of 10⁻⁵ Torr. The structural and compositional analysis revealed that these films are of amorphous nature and are atomically composed of 51% In and 49% Se. The reflectance and transmittance of the films are measured at various temperatures (300–450 K) in the incident photon energy range of 1.1–2.1 eV. The direct allowed transitions band gap – calculated at various temperatures – show a linear dependence on temperature. The absolute zero value band gap and the rate of change of the band gap with temperature are found to be (1.62 ± 0.01) eV and −(4.27 ± 0.02) × 10⁻⁴ eV/K, respectively. The room temperature refractive index is estimated from the transmittance spectrum. The later analysis allowed the identification of the static refractive index, static dielectric constant, oscillator strength and oscillator energy.     

Nano-particle thin films of tin oxides

Nano-particle thin films of tin oxides were deposited on SiO₂ substrates by using radio frequency (RF) magnetron sputtering with various substrate temperatures, sputtering powers and oxygen partial pressures. The tin oxides thin films were then investigated by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). XPS data suggested that the deposited tin oxides thin films are almost made up of half of SnO₂ and half of SnO. The oxygen partial pressure nearly does not affect the chemical stoichiometry of the thin films in our deposition conditions. SEM results showed that the tin oxides thin films were formed by nano-particles with size of about 60 nm. Sputtering power has a strong influence on the particle size of the thin films. Increase of sputtering power will enlarge the size of the particles.     

磁控溅射制备镍薄膜热阻温度传感器工艺研究

利用镍薄膜的温度电阻特性以及磁控溅射镀膜技术设计并制备了薄膜热阻型温度传感器，为了达到较好的工作稳定性，设计了多层的复合膜系。文中分析了沉积薄膜的工作压力、电源功率、靶基距、退火温度、退火时间等制备工艺参数对热阻薄膜特性的影响，以及工艺参数对所沉积的镍薄膜的膜厚均匀度和温度电阻曲线，温度电阻系数等传感特性的影响。通过调整实验的工艺参数，最终得到电阻温度性能较好的镍薄膜温度传感器。测试结果表明薄膜传感器在0-250℃之间温度电阻曲线有较好的线性度和稳定性。