高性能Rail-to-Rail恒定跨导CMOS运算放大器

基于UMC的0.6μm BCD 2P2M工艺,探讨了一种高性能Rail-to-Rail恒定跨导CMOS运算放大器.该运算放大器的输入级采用互补差分对,其尾电流由共模输入信号来控制,以此来保证输入级的总跨导在整个共模范围内保持恒定.输出级采用ClassAB类控制电路,并且将其嵌入到求和电路中,以此减少控制电路电流源引起的噪声和失调.为了优化运算放大器低频增益、频率补偿、功耗及谐波失真,求和电路采用了浮动电流源来偏置.该运算放大器采用米勒补偿实现了18MHz的带宽,低频增益约为110dB,Rail-to-Rail引起的跨导变化约为15%,功耗约为10mW.     

一种宽带恒定跨导轨对轨运算放大器的设计

介绍了一种具有轨对轨输入功能的CMOS输入级电路。该电路克服了一般运算放大器只能工作在一定共模输入范围的输入级的缺陷，在各种共模输入电平下有着几乎恒定的跨导，使频率补偿更容易实现，且由于其工作原理与MOS晶体管的C—V解析关系无关，对制造工艺依赖性小，适用于深亚微米工艺。在此基础上，设计出了一种宽带的运算放大器，该运算放大器具有轨对轨输入、输出能力，可以作为常用模拟电路的基本单元模块。它没有严格的共模输入限制，跨导和整体性能稳定，适于为更大规模的数字／模拟混合信号系统提供行为级模型。     

基于SOC应用恒定跨导Rail-to-Rail CMOS运算放大器

基于SOC应用,采用CSMC 0.5μm DPDM CMOS工艺,设计了一种恒定跨导的Rail-to-Rail CMOS运算放大器。该运算放大器采用平方根电路恒定输入级总跨导;同时运用Class AB推挽电路作输出级,获得高驱动能力和低谐波失真。在5 V单电源工作电压、30 pF负载电容和10 KΩ负载电阻情况下,经过Hspice仿真,运放的直流开环增益达到98 dB,相位裕度为65°,输入级跨导最大偏差低于17%。     

一种低电压恒定跨导Rail-to-Rail的CMOS运放输入级

提出了一种采用了四对差分管来实现跨导恒定的Rail-to-Rail CMOS运算放大器输入级的方法.用两对互补的差分对作为输入级,另两对互补差分对动态地控制输入级工作电流,以实现Rail-to-Rail恒定跨导.通过在电路中加入补偿电流来提高四对差分管工作的协调性.基于TSMC 0.18 μm COMS的工艺,应用Hspice在不同电压、温度环境下进行了电路的仿真验证,结果表明所设计的电路在各种条件下都有较好的性能,其在共模范围内跨导最大偏差小于2%.本文还分析了MOS管二阶效应对电路产生的影响.     

基于单一PMOS差分对的轨到轨输入运算放大器设计

基于国内某CMOS工艺设计了一种单一PMOS差分对的轨到轨输入、恒跨导CMOS运算放大器。输入级电路采用折叠共源共栅结构,通过体效应动态调节输入管的阈值电压扩展共模输入范围到正负电源轨,恒定共模输入范围内的跨导,自级联电流镜有源负载将差分输入转换为单端输出;输出级电路采用AB类结构实现轨到轨输出,线性跨导环确定输出管的静态偏置电流。在5 V电源电压,2.5 V共模电压,1 MΩ负载条件下,经Spectre仿真验证,该运算放大器开环增益为119 dB,相位裕度为58°,共模输入范围为0.0027～4.995 V,共模范围内跨导变化小于3%,实现了轨到轨输入共模范围内的跨导恒定。     

恒定跨导Rail-to-Rail CMOS运放设计

设计了一种新型的低电压低功耗且跨导恒定的Rail-to-Rail CMOS运算放大器,输入级采用改进的最大电流选择电路结构,输出级采用推挽输出结构,其输入输出摆幅均为Rail-to-Rail,工作电压为±1.5V.整个电路采用BSM30.5μm CMOS工艺模型参数进行了HSPICE仿真,静态功耗仅为0.5mW,当电路驱动20pF的电容负载时,电路的直流增益达到78dB,单位增益带宽达到470MHz,相位裕度为59°.     

一种轨至轨输入的低压低功耗运放的设计

本文采用0.35μm的CMOS标准工艺,设计了一种轨至轨输入,静态功耗150μW,相位增益86dB,单位增益带宽2.3MHz的低压低功耗运算放大器。该运放在共模输入电平下有着几乎恒定的跨导,使频率补偿更容易实现,可应用于VLSI库单元及其相关技术领域。     

恒跨导高摆率轨对轨运算放大器的设计

本文在分析MOS管恒跨导输入级和AB类输出级运算放大器的基础上设计了一个高摆率、恒跨导的轨对轨运算放大器。在输入级中采用了齐纳二极管的稳压原理,保证Rail-to-Rail运算放大器的输入跨导恒定。为了实现高转换率,本文采用了一种新型的压摆率提高电路。另外,为了提高系统的稳定性,采用了控制零点的米勒补偿进行频率补偿。采...     

采用最大电流选择的恒定跨导Rail-to-Rail CMOS运放输入级

基于TSMC0．18μm CMOS工艺设计了一种具有恒定跨导的1．8V rail—to-rail CMOS运算放大器的输入级。采用两路结构相同的最大电流选择电路实现输入级总跨导的恒定。电路采用Hspice仿真，工作电压1．8V。输入级在强反型层工作时，电路的总跨导偏差在5％之内；弱反型层上作时，总跨导偏差在8％之内。     

一种具有高转换速率的轨对轨运算放大器

为了驱动液晶显示器背板形成不同的灰阶,设计了一种利用齐纳二极管的稳压原理,实现恒定跨导用于TFT-LCD液晶显示的片内运算放大器。采用互补差分输入级,实现了Rail-to-Rail的共模电压输入范围;一种新颖的转换速率增强结构,加快了运算放大器的响应速度;输出级采用Class AB类控制电路,并将其嵌入到求和电路中,以保证较低的噪声和失调。直流增益为101dB,单位增益带宽为13MHz,相位裕度为64°。仿真结果证明该运算放大器工作良好,其面积为500μm×380μm。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.