Ce掺杂钛基二氧化锡电极的制备及电催化性能研究

采用高温热氧化法制备了稀土Ce掺杂SnO2/Sb电极,以SEM、EDX、XRD以及XPS等分析方法对所制备电极进行了形貌、组成及结构的表征,并根据Scherrer公式计算了电极表面SnO2的平均晶粒尺寸.结果显示,所制备电极涂层由纳米级的微晶SnO2构成,Ce的掺杂使Sb向电极表面富集,同时Ce本身也有向电极表面富集的趋势;Ce的掺杂影响了SnO2晶粒的成核过程,可能减少了晶格中的氧缺位.对苯酚的电化学氧化降解实验研究表明,Ce的掺杂降低了SnO2/Sb电极对苯酚降解中间产物的降解效率.     

CeO2掺杂对二氧化锡电极力学性能的影响

以氧化铈作掺杂添加剂,通过对玻璃熔窑用二氧化锡电极掺杂一定量的氧化铈,分析电极的力学性能和微观结构,结果表明,氧化铈对二氧化锡电极的抗折和增韧效果显著,一定程度上能促进SnO2晶相的形成和生长,使氧化锡晶体成三维生长,大大提高了电极的力学性能,同时对电极的导电性也有明显的效果.     

掺锑二氧化锡纳米涂层电极制备及电催化氧化性能

采用改进的热氧化工艺制备了掺锑二氧化锡纳米涂层电极,对电极的成分、结构和形貌进行了表征,并进行了电化学性能测试.以自制电极为阳极,钛板为阴极,进行了对硝基苯酚溶液的电催化氧化降解实验;以紫外可见分光光度计和高效液相色谱等为检测手段,对对硝基苯酚的降解途径进行了初步分析.     

纳米二氧化锡/三维大孔石墨烯复合电极的制备及其储锂性能的研究

以维生素C(VC)为还原剂,通过溶剂热还原法制备了纳米二氧化锡/三维大孔石墨烯复合负极材料(SnO_2/3DGr)。SEM和TEM测试表明,SnO_2/3DGr具有均匀分布的微米级孔隙,其中SnO_2晶粒尺寸为6~8nm,且均匀分布在石墨烯片层表面。电化学测试表明所制备的SnO_2/3DGr复合电极材料具有优异的电化学性能,该材料在电流密度为100mA/g时,循环100周之后仍然具有1678mAh/g的可逆比容量,在极高电流密度5A/g下,仍然保持405mAh/g的可逆比容量,表现出非常优异的循环稳定性和倍率性能。该材料独特的三维大孔结构以及SnO_2与石墨烯的协同作用,很好地抑制了SnO_2在循环过程中的体积效应,大大改善了SnO_2负极材料的电化学性能。     

有机太阳能电池ITO电极的光刻制备法及其研究

目前有机太阳能电池是光电行业研究的热点之一。通常该器件以ITO为阳极，通过真空蒸镀的方法制作。在对器件进行测试时，ITO电极的设计制作，有利于器件的保护。用光刻技术进行ITO电极的制作，可以得到非常精细的结果。重点阐述了利用光刻方法制作优良ITO电极的注意点，包括表面清洗、曝光控制、显影控制和腐蚀工艺，其中由于不同ITO玻璃的导电层厚度、各成分含量不同，所以腐蚀工艺的研究是重点中的重点。提供了对生成光刻ITO电极的质量进行准确评价的一种简便方法。     

二氧化锡纳米线的生长机理研究

使用水平石英管式电炉，以二氧化锡和石墨的混合物为原材料、高纯氮气为载气，在850℃温度下用直接热蒸发法制备二氧化锡纳米线．衬底硅片的直径为10mm，其上覆盖一层5nm厚的金催化剂．原材料放在石英舟中，离原材料30mm的下风口处放置硅衬底，原材料和硅衬底都放置在石英管的中部电炉的恒温区内．用扫描电子显微镜（SEM）和透射电子显微镜（TEM）观察到二氧化锡的纳米线结构；X射线衍射（XRD）表明二氧化锡纳米线具有四方金红石结构；选区电子衍射（SAED）照片表明二氧化锡纳米线具有完善的晶体结构．不同生长时间下制备样品的扫描电子显微镜和透射电子显微镜照片再现了二氧化锡纳米线的生长过程，该纳米线的生长符合传统的VLS生长机制．     

二氧化锡薄膜的电阻气敏和光透射率气敏性能

以无机盐为原料,采用新颖的溶胶－凝胶工艺制备了具有优良电阻－气敏性能的纳米晶二氧化锡薄膜,其在最佳工作温度２００℃对６００ｐｐｍＣＯ的灵敏度可达５００,响应时间和恢复时间分别为１３ｓ和２０ｓ,进一步研究了薄膜的光透射率－气敏性能,发现当通ＣＯ时,透射率下降,最佳工作温度与电阻－气敏性能一致,当提高薄膜的退火温度时,电阻－气敏和光透射率－气敏的灵敏度均下降,分析了产生这些现象的原因。     

酸度计玻璃电极的选择

酸度计的玻璃电极是pH测量中极重要的组成部分,它的作用是与甘汞电极一起组成一个测量电池,该测量电池电动势的大小与容液中氢离子的浓度在一定范围内成线性关系。在使用中它的寿命是有限的,正常情况下只有一年多,部分玻璃电极(以下简称电极)往往用不到一年就会因各种原因...     

锑掺杂二氧化锡涂覆型导电纤维力电行为研究

导电纤维作为一种功能纤维，具有电阻“正效拉力系数”效应，利用这一特性可将其制成应力传感器，以实现对道路或桥梁等结构的在线监测，具有很好的应用前景。以锑掺杂二氧化锡（ATO）为导电成分，聚己内酰胺（PA6）纤维为基体纤维，制备了ATO/PA6涂覆型导电纤维，讨论了ATO/PA6导电纤维体积比电阻随拉伸应力的变化，并建立了数学模型，为进一步研究其力电行为奠定了基础。     

Substitution of transparent conducting oxide thin films for indium tin oxide transparent electrode applications

The present status and prospects for further development of reduced or indium-free transparent conducting oxide (TCO) materials for use in practical thin-film transparent electrode applications such as liquid crystal displays are presented in this paper: reduced-indium TCO materials such as ZnO-In₂O₃, In₂O₃-SnO₂ and Zn-In-Sn-O multicomponent oxides and indium-free materials such as Al- and Ga-doped ZnO (AZO and GZO). In particular, AZO thin films, with source materials that are inexpensive and non-toxic, are the best candidates. The current problems associated with substituting AZO or GZO for ITO, besides their stability in oxidizing environments as well as the non-uniform distribution of resistivity resulting from dc magnetron sputtering deposition, can be resolved. Current developments associated with overcoming the remaining problems are also presented: newly developed AZO thin-film deposition techniques that reduce resistivity as well as improve the resistivity distribution uniformity using high-rate dc magnetron sputtering depositions incorporating radio frequency power. In addition, stability tests of resistivity in TCO thin films evaluated in air at 90% relative humidity and 60 °C have demonstrated that sufficiently moisture-resistant AZO thin films can be produced at a substrate temperature below 200 °C when the film thickness was approximately 200 nm. However, improving the stability of AZO and GZO films with a thickness below 100 nm remains a problem.     

Selective photoelectrochemical detection of DNA with high-affinity metallointercalator and tin oxide nanoparticle electrode

Selective detection of double-stranded DNA (ds-DNA) in solution was achieved by photoelectrochemistry using a high-affinity DNA intercalator, Ru(bpy)2dppz (bpy = 2,2'-bipyridine, dppz = dipyrido[3,2-a:2',3'-c]phenazine) as the signal indicator and tin oxide nanoparticle as electrode material. When Ru(bpy)2dppz alone was irradiated with 470-nm light, anodic photocurrent was detected on the semiconductor electrode due to electron injection from its excited state into the conduction band of the electrode. The current was sustained in the presence of oxalate in solution, which acted as a sacrificial electron donor to regenerate the ground-state metal complex. After addition of double-stranded calf thymus DNA into the solution, photocurrent dropped substantially. The drop was attributed to the intercalation of Ru(bpy)2dppz into DNA and, consequently, the reduced mass diffusion of the indicator to the electrode, as well as electrostatic repulsion between oxalate anion and negative charges on DNA. The degree of signal reduction was a function of the DNA concentration, thus forming the basis for real-time DNA detection. The signal reduction was selective for ds-DNA, as no such effect was observed for single-stranded polynucleotides such as poly-G, poly-C, poly-A, and poly-U. The detection limit of calf thymus ds-DNA reached 1.8 x 10(-10) M in solution.     

All-solid-state reflectance-type electrochromic devices using iridium tin oxide film as counter electrode

We prepared an all-solid-state reflectance-type electrochromic device (ECD), consisting of the following five layers: Al/WO₃/Ta₂O₅/Ir_xSn_1 − xO₂/ITO. Using RF ion plating, we prepared a film containing dispersed iridium oxide in a tin oxide matrix; this film acts as the counter electrode in the all-solid-state ECD. Protons were used as coloration ions in the ECD. The size of the ECD was 150 cm², and the reflectance changed between more than 60% from 15%. The coloration and bleaching response times were less than a few seconds. We analyze the optical characteristics of the ECD, and report the results of a consecutive drive test and a high-temperature heat resistance test.     

Characterization and photocatalytic activity of nanostructured indium tin oxide thin-film electrode for azo-dye degradation

Photocatalytically active indium tin oxide thin film electrodes were prepared by electron beam evaporation technique onto a glass substrate having thickness 120 nm. Degradation of reactive dye yellow direct 42 has been performed using photoeletrocatalysis. A biased potential is applied across indium tin oxide photoelectrode illuminated by UV light. The best experimental conditions were found to be dye concentration 1.0 × 10^− 5 mol L^− 1, pH 5.25 and 0.5 mol L^− 1 NaCl as supporting electrolyte when the photoelectrode was biased at + 0.5 V versus saturated calomel electrode. The effects of other electrolytes, dye concentration, pH solution, electrode annealing temperature and applied potentials have been also investigated and are discussed. Several common inorganic salts Na₂SO₄, Na₂CO₃, NaNO₃ and NaCl were chosen to act as supporting electrolytes, which was added into the dye solution. It is shown that the charge-transfer resistance of photoanode can be calculated by the analysis of its electrochemical impedance spectroscopy, and the photoelectrocatalytic degradation rate of yellow direct 42 was inversely proportional to the value of charge-transfer resistance of photoelectrodes at different pH. The value of charge-transfer resistance is smaller, the higher its photoelectro-activity is.     

Photoelectrochemical oxidation of DNA by ruthenium tris(bipyridine) on a tin oxide nanoparticle electrode

Selective photoelectrochemical oxidation of DNA was achieved by ruthenium tris(bipyridine) immobilized on a tin oxide nanoparticle electrode. The metal complex was covalently attached to a protein, avidin, which adsorbed strongly on the tin oxide electrode by electrostatic interaction. Upon irradiation with 473-nm light, anodic photocurrent was generated in a blank electrolyte and was enhanced significantly after addition of poly(guanadylic acid) (poly-G) into the electrolyte. The current increased progressively with the nucleotide concentration, suggesting the enhancement effect was related to poly-G. The action spectrum indicates that the photocurrent was initiated by light absorption of the ruthenium compound immobilized on the electrode. Among the various polynucleotides examined, poly-G produced the largest photocurrent increase, followed by poly-A, single-stranded DNA, chemically damaged DNA, and double-stranded DNA, whereas poly-C and poly-U showed little effect. The combined experimental data support the hypothesis that the photoexcited Ru2+ species injects an electron into the semiconductor and produces Ru3+, which is then reduced back to Ru2+ by guanine and adenine bases in DNA, resulting in the recycling of the metal complex and enhanced photocurrent. The photoelectrochemical reaction can be employed as a new method for the detection of DNA damage.     

Electrochemical deposition of high density gold nanoparticles on indium/tin oxide electrode for fabrication of biosensors

High density gold nanoparticles (GNPs) on indium tin oxide (ITO) film coated glass have been prepared by one-step electrochemical deposition from KAu(CN)2 in phosphate buffer (pH 8.0) solution. The resulting electrode surface was characterized by scanning electron microscopy (SEM), UV-vis spectroscopy, X-ray diffraction (XRD) and electrochemical method. Experimental results revealed that the number density of the nanoparticles was increased by the negative shift of the applied potential, while the coverage of the deposited GNPs on ITO substrate surface was also increased by means of the increasing deposition cycles. The presence of GNPs with high coverage improved the electrochemical response of Fe(CN)6 (3-/4-). This high coverage GNP/ITO substrate was applied to immobilization superoxide dismutase (SOD) for fabrication of electrochemical biosensors. The direct electron transfer between enzyme and electrode was realized, and the electrochemical performance of the SOD electrode was improved with the high coverage of GNPs. The biosensor exhibited a rapid and high response to superoxide anion.     

Potentiometric sensing of chemical warfare agents: surface imprinted polymer integrated with an indium tin oxide electrode

Rapid and specific recognition of methylphosphonic acid (MPA), the degradation product of nerve agents sarin, soman, VX, etc., was achieved with potentiometric measurements using a chemical sensor fabricated by a surface imprinting technique coupled with a nanoscale transducer, indium tin oxide (ITO). An octadecylsiloxane thin layer was covalently bound to the ITO-coated glass surface in the presence of MPA. After extraction of MPA, potentiometric measurements showed selective detection of MPA. The selectivity of the sensor has been tested on other alkylphosphonic acids, such as ethylphosphonic acid and propylphosphonic acid, as well as tert-butylphosphonic acid. The viability of the sensor in the presence of other chemical analogues, such as organophosphorus pesticides and herbicides, was investigated.