一种利用射频仿真软件优化键合线形的方法

半导体器件内键合线的线形复杂程度决定键合工序和调试工序的效率。以提高键合工序生产效率为目的,利用射频仿真软件对某成熟半导体器件内匹配线进行从手动键合向自动键合的优化。结合金丝球焊线形特点,进行研究方案设计,通过仿真和测试的方法,最终将手动键合丝形状优化为适合自动球焊键合机键合的线形。射频测试结果表明,优化前后器件的S参数测试结果一致性较好。该优化方案缩短了仿真周期,实现了器件生产从手动键合向自动键合转化,提高了生产效率,改善了器件的一致性,使该器件实现了调测阶段的免调试,满足了大批量生产要求。     

三相桥功率模块振动失效分析

可靠性验证中随机振动试验是造成功率模块失效的主要原因之一,通过对试验阶段三相桥功率模块的失效分析,表明随机振动造成的失效模式是互连键合线根部断裂.基于对键合线断裂失效机理研究,结合ANSYS有限元软件振动仿真,提出了可靠性改进提升方案,使键合线的等效应力从55.06 MPa降低至17.03 MPa,增加了键合线的工作寿...     

用于三维封装的铜-铜低温键合技术进展

在三维系统封装技术中,金属热压键合是实现多层芯片堆叠和垂直互连的关键技术。为了解决热压键合产生的高温带来的不利影响,工业界和各大科研机构相继开发出了多种低温键合技术。综述了多种不同的低温金属键合技术(主要是Cu-Cu键合),重点阐述了国内外低温金属键合技术的最新研究进展及成果,并对不同低温金属键合技术的优缺点进行了分析和比较。     

微波多芯片组件中键合线的参数提取和优化

为解决微波多芯片组件(Microwave Multi-Chip Module,MMCM)中键合互连线的设计问题,采用三维电磁场软件HFSS和电路设计软件Ansoft Designer对键合线的模型进行了仿真分析。根据仿真结果,提取了键合线的等效电路参数。最后建议采用增加线宽的微带线结构结合两到三根键合线,以达到优化设计的目的。     

IC封装中键合线传输结构的仿真分析

随着高频高速集成电路制造工艺的不断进步,电子封装技术的发展也登上了一个新高度。作为微电子器件制造过程中的重要步骤之一,封装中的传输线、过孔、键合线等互连结构都可能对电路的性能产生影响,因此先进的集成电路封装设计必须要进行信号完整性分析。介绍了一种键合线互连传输结构,采用全波分析软件对模型进行仿真,着重分析与总结了键合线材料、跨距、拱高以及微带线长度、宽度五种关键设计参数对封装系统中信号完整性的影响,仿真结果对封装设计具有实际的指导作用。     

键合线互连电路的优化设计

介绍了一种微波多芯片组件中芯片与传输线互连的键合线互连电路设计。采用低通滤波器方法设计的键合线互连电路结构,在键合线长度一定的情况下,能够显著提高键合线互连电路的频率响应。设计了一种基于3阶低通滤波器的键合线互连电路,将键合线的寄生电感融入了3阶低通滤波器中,改善了键合线互连电路的微波传输特性,提高了键合线互连电路的截止频率。采用微波电路设计软件和三维电磁场软件相结合的设计方法,对键合线互连电路的微波特性进行建模、分析,验证了这种电路设计方法的正确性。     

毫米波射频互联金丝热超声楔焊工艺优化研究

金丝热超声楔焊是微波毫米波模块射频互联的关键手段。采用三维电磁仿真软件对毫米波频段的金丝热超声楔焊进行了建模仿真,分析了金丝跨距、拱高和角度等物理参量对驻波的影响。针对模拟仿真优化后的热超声楔焊金丝互连结构,给出了金丝热超声楔焊表面状态优化、线型控制参数优化以及键合参数优化等相应的工艺优化措施,从而达到热超声楔焊金丝性能优化的目的。     

EHF频段键合线分析

金丝键合是毫米波频段器件互连的主要手段,随着工作频率的不断升高,金丝的趋肤深度不断减小,金丝键合线对电路的影响也变得越来越大。通过对键合线模型的理论分析和软件仿真,总结出键合线的拱高、间隔等参数在EHF频段的影响规律。选择不同的补偿措施,尽量减小键合线带来的不良影响。通过对实物的测试,验证了以上结论。     

毫米波射频互连微组装工艺优化研究

在毫米波产品的装配中,射频互连微组装工艺是影响产品性能的一个重要因素。采用三维电磁仿真软件对毫米波频段的组装缝隙宽度、金丝热超声楔焊跨距及拱高进行了建模仿真,分析了上述因素对驻波的影响。针对模拟仿真优化结果,给出了毫米波射频互连装配精度控制、接地焊接效果优化、金丝热超声楔焊线型及键合参数优化等相应的工艺优化措施,从而达到毫米波射频互连微组装工艺优化的目的。     

一种优异温度稳定性Ka波段上变频放大模块

研究了Ka波段变频放大电路的设计及其温度补偿技术,分析了上变频放大模块的基本原理,分别对射频增益及检波电压进行了温度补偿,提出了一种优异温度稳定性、高线性度、高增益稳定性的总体设计方案。该变频放大模块由放大电路、温补电路、混频电路、滤波电路及功率放大器等单元电路组成。运用Agilent ADS软件完成了模块的整体电路设计。同时,介绍了一种基于场仿真软件和实测相结合的方法,建立毫米波多芯片组件中互连的键合线模型,将键合线的寄生电感融入了上变频放大模块电路设计中,显著提高键合线互连电路的频率响应。采用多芯片组装工艺制作了高性能的变频放大模块,实现了在Ka波段输出功率＞于30.6 dBm,全温范围功率波动＜0.8 dB,全温检波电压指示波动＜0.2 V,测试结果与仿真结果一致。     

RF Power Performance of Asymmetric-LDD MOS Transistor for RF-CMOS SOC Design

This letter presents a new asymmetric-lightly-doped-drain (LDD) metal oxide semiconductor (MOS) transistor that is fully embedded in a CMOS logic without any process modification. The radio frequency (RF) power performance of both conventional and asymmetric MOS transistor is measured and compared. The output power can be improved by 38% at peak power-added efficiency (PAE). The PAE is also improved by 16% at 10-dBm output power and 2.4 GHz. These significant improvements of RF power performance by this new MOS transistor make the RF-CMOS system-on-chip design a step further     

Electrical measurement of the junction temperature and thermal resistance of HBTs

A simple method is proposed to derive the junction temperature and the bias- and temperature-dependent thermal resistance of heterojunction bipolar transistors (HBTs) using a radio frequency (RF) signal. The method exploits the thermal dependence of the current gain of a transistor whose dissipated power is modified by applying an RF signal. The new method is used to derive the junction temperature and thermal resistance of a power HBT. The results are compared with state-of-the-art techniques.     

A CMOS RF Polar Transmitter of a UHF Mobile RFID Reader for High Power Efficiency

A CMOS radio frequency (RF) polar transmitter architecture for a UHF (860–960 MHz) RF identification (RFID) reader is proposed, which consists of a switch-mode CMOS power amplifier (PA) and an analog pulse-shaping filter implemented in 0.25-$mu$ m CMOS process. The amplitude modulation of a amplitude shift keying signal is performed by simply switching the common gate transistor of a cascode power amplifier. Extremely low power consumption is achieved when the PA is switched off. The power efficiency of the transmitter is enhanced not only by using switching power amplifier but also by employing this architecture.      

Semiconductor devices for RF applications: evolution and current status

This paper reviews the history, evolution, current status, and applications of semiconductor devices for radio frequency (RF) applications. The most important developments and major milestones leading to modern high-performance RF transistors are presented. Heterostructures, which are key elements for some advanced RF transistors, are described, and an overview of the different transistor types and their figures of merit is given. Applications of RF transistors in civil RF systems with special emphasis on wireless communication systems are addressed, and the issues of transistor reliability are also briefly discussed.     

An innovative mathematical model of RF-induced quiescent pointshift in a BJT

This paper describes the bipolar junction transistor (BJT) behavior under radio frequency (RF) injection in its base lead. Comparative results between a computer model and measured data over the range 5-1000 MHz are presented. In this work, various bias networks with different base bias resistors and various levels of injected power were taken into account. A new method to calculate the model electrical parameters is shown, without the direct knowledge of physical parameters such as doping profiles and geometrical dimensions of the junctions. For modeling purposes, a two-section hybrid π model was used in conjunction with a Fourier expansion of the rectification response. A good agreement was found between the measured data and model data     

InGaP HBT 大信号RF功率传输特性

本文实验研究了用于RF功率放大器的先进的InGaP HBT 器件大信号RF功率传输特性。研究了InGaP HBT在小信号和大信号状态下输出端的发射功率和反射功率及输入端的反射功率的规律。分析了InGaP HBT RF功率信号的多频率功率成份及其对大信号功率增益压缩,非线性和RF输出功率饱和的影响。     

Large signal RF power transmission characterization of InGaP HBT for RF power amplifiers

The large signal RF power transmission characteristics of an advanced InGaP HBT in an RF power amplifier are investigated and analyzed experimentally. The realistic RF powers reflected by the transistor, transmitted from the transistor and reflected by the load are investigated at small signal and large signal levels. The RF power multiple frequency components at the input and output ports are investigated at small signal and large signal levels, including their effects on RF power gain compression and nonlinearity. The results show that the RF power reflections are different between the output and input ports. At the input port the reflected power is not always proportional to input power level; at large power levels the reflected power becomes more serious than that at small signal levels, and there is a knee point at large power levels. The results also show the effects of the power multiple frequency components on RF amplification.     

基于悬置线双模谐振器谐波控制型滤波功放

为了实现高效率的射频滤波功率放大器（filtering power amplifier）,将基于悬置线的截线加载谐振器（stub-loaded resonator）带通滤波器的输入阻抗直接匹配到射频功放管CGH40010F的最佳基波阻抗和谐波阻抗,实现射频功率放大器与滤波器的联合设计,使滤波器同时实现了滤波、阻抗匹配和谐波控制的功能,避免了额外的输出匹配结构,实现了结构紧凑、具有滤波功能的高效率谐波控制型射频功放.实测结果表明在中心频率2.45GHz处,其输出功率约为40dBm,最大电源附加效率（power added efficiency）为76.9%,同时具有良好的滤波特性.     

Radial cavity-fed spatial power combiner with retrodirective array behavior

This paper discusses the design and operational properties of a circular array of slot coupled active GaAs metal-semiconductor field-effect transistor (MESFET) rectangular microstrip patch antennas arranged for quasioptical power combining at X band. The active antenna radiating elements are injection locked by slot coupling to a radial cavity waveguide. Spatial power combining efficiency of 75% and dc to radio frequency (RF) conversion efficiency of 10% at 28 dBm EIRP was achieved at 10.38 GHz. Retrodirective action was also demonstrated by using the active elements as self-oscillating mixers pumped at 20.76 GHz.     

A novel full-wave rectifier/sinusoidal frequency doubler topology based on CFOAs

In this paper, a high-efficiency class-F power amplifier (PA) is designed using integration between a low voltage p-HEMT transistor and a miniaturized microstrip suppressing cell. It results in nth harmonic suppression and high power added efficiency (PAE) under low radio frequency (RF) input powers. The simulation is performed based on harmonic balance analysis. The proposed power amplifier is fabricated, and measurements results validated the simulations. The proposed power amplifier operates at 1.8 GHz with 100 MHz bandwidth and an average PAE of 71.1%, with very low drain voltage of 2 V. At fundamental frequency of 1.8 GHz, the maximum measured PAE is 73.5% at about 12 dBm RF input power. The maximum output power and gain are 23.4 and 17.5 dBm in RF input power ranges of 0–12 dBm, respectively. The fabricated class-F PA with such characteristics can be used for power amplifications in wireless transmitters such as 4G (4th generation)-LTE (long term evolution) communication systems.