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1.
本文利用EBSD技术研究了室温下AZ31镁合金多向压缩变形中的孪生行为.实验结果表明TD方向预压缩变形以{1012}〈1011〉拉伸孪生为主,导致晶体取向产生86°旋转,{0001}极图中TD附近出现极强的峰值,从而使后续ND方向压缩变形时有利于退孪生行为发生,{0001}极图中ND附近重新出现极强的峰值.  相似文献   

2.
在轧制镁板材沿TD和RD方向分别切取疲劳试样,并对它们进行室温下的高温疲劳变形。 EBSD分析方法应用于样品的微观组织及织构变化的表征方面。发现经高周应力疲劳变形后,由于应变量非常小,RD与TD方向整体孪晶数量都不多,疲劳后相比疲劳前孪生体积分数有所增加,沿TD方向的孪生体积分数高于RD方向。经拉压循环变形后除{1012}拉伸孪生外还出现了少量的{1011}压缩孪生与{1011}-{1012}二次孪生,导致屈服强度增加,TD方向的抗拉强度与延伸率均高于RD方向。分析其断口形貌发现TD方向疲劳辉纹较小,解理断裂的区域更少,韧窝比较深,故TD试样的高周疲劳性能以及材料的塑性略优于RD试样。由于轧制织构在轧制面内基本对称,所以二者的差别并不太显著。  相似文献   

3.
本文以热轧退火态锆合金板材为研究对象,选用两种压缩试验样品,其压缩方向分别平行于原板材的法向(ND样品)和原板材的横向(TD样品),利用Gleeble热模拟试验机和EBSD分析技术,对两种样品准静态压缩变形行为进行了研究。结果表明,热轧退火态锆合金板材的准静态力学性能具有明显的各向异性,TD样品的屈服强度和流变应力均低于ND样品。且TD样品在变形过程中产生了一定数量的{10 12}拉伸孪晶,使TD样品中的晶粒c轴均向TD方向发生了转动。通过对两个加载方向的柱面滑移的Schmid Factor(SF)进行计算发现,TD样品的柱面滑移的SF大于ND样品,说明当加载方向沿着TD方向时,柱面滑移更容易开启,使得TD样品的屈服强度低于ND样品。  相似文献   

4.
在室温和150℃下对AZ31镁合金进行平面应变压缩试验,应变速率为0.01s-1,形变量为0.1。试样(切割于强织构的热轧板)的压缩轴c与其基面法向成不同的角度,从而研究初始织构对AZ31镁合金塑性变形行为的影响。利用电子背散射衍射花样(EBSD)采集变形试样的微观结构和织构信息,分析孪生和滑移行为。实验发现AZ31镁合金塑性变形由{1012} 〈011〉拉伸孪生和基面滑移共同控制,并确定了各种变形模式比例与晶体初始取向的关系,其中拉伸孪生在压缩轴垂直于c轴方向时占主导作用。  相似文献   

5.
锆合金具有密排六方结构,晶体对称性低,优先滑移系数目较少,变形机制较为复杂。本文利用电子背散射衍射(EBSD)技术研究了变形锆合金晶粒内部取向差轴(in-grain misorientation axes,简称IGMA)的分布规律。研究结果表明,c轴平行于TD或向TD倾斜的晶粒,IGMA集中分布在〈0001〉轴附近,其变形机制以柱面滑移为主;c轴平行于ND的晶粒,〈0001〉轴附近的IGMA密度较低,变形过程中锥面滑移起重要作用。除了晶体取向影响,变形机制还可能受到晶粒约束条件的影响。  相似文献   

6.
在室温和150℃下对AZ31镁合金进行平面应变压缩试验,应变速率为0.01 s-1,形变量为0.1.试样(切割于强织构的热轧板)的压缩轴c与其基面法向成不同的角度,从而研究初始织构对AZ31镁合金塑性变形行为的影响.利用电子背散射衍射花样(EBSD)采集变形试样的微观结构和织构信息,分析孪生和滑移行为.实验发现AZ31镁合金塑性变形由{10(-12)}<(-10)11>拉伸孪生和基面滑移共同控制,并确定了各种变形模式比例与晶体初始取向的关系,其中拉伸孪生在压缩轴垂直于c轴方向时占主导作用.  相似文献   

7.
本文采用原位背散射电子衍射(原位-EBSD)方法研究了AZ31合金在压缩应力下的微观组织演变。结果表明{10 12}[1011]孪生是主要的变形模式。该孪生模式导致了变形后晶体取向发生了明显的转变,由原始取向为其C轴垂直于挤压方向ED的丝织构,转变为其C轴平行于ED及压缩应力方向。同时位错滑移也提供了一定的变形量。AZ31合金中RD和TD织构组分的梯度对于压缩变形条件下的孪生变形没有明显的影响。  相似文献   

8.
本文以热轧退火态锆合金板材为研究对象,选用两种压缩试验样品,其压缩方向分别平行于原板材的法向(ND样品)和原板材的横向(TD样品),利用Gleeble热模拟试验机和EBSD分析技术,对两种样品准静态压缩变形行为进行了研究.结果表明,热轧退火态锆合金板材的准静态力学性能具有明显的各向异性,TD样品的屈服强度和流变应力均低...  相似文献   

9.
在轧制镁板材纵截面(即RD-ND面)分别切出样品轴绕法向(ND)方向旋转0°、30°、60°和90°的4种样品,并对它们进行室温下的动态塑性变形(dynamic plastic deformation,简称DPD)。EBSD分析方法应用于样品的微观组织及织构变化的表征方面,发现随着角度的增大孪生体积分数逐渐增大。60°和90°的变形样品中,只存在86°〈1 210〉和60°〈10 10〉两种界面关系,且数量很多。在0°变形样品中,除极少量的{10 12}拉伸孪晶外,基本上都是{10 11}-{10 12}二次孪晶。30°变形样中,{10 12}拉伸孪晶和{10 11}-{10 12}二次孪晶为主要的孪晶形式。  相似文献   

10.
锆合金具有密排六方结构,晶体对称性低,优先滑移系数目较少,变形机制较为复杂.本文利用电子背散射衍射(EBSD)技术研究了变形锆合金晶粒内部取向差轴(in-grain misorientation axes,简称IGMA)的分布规律.研究结果表明,c轴平行于TD或向TD倾斜的晶粒,IGMA集中分布在〈0001〉轴附近,其...  相似文献   

11.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

12.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

13.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.  相似文献   

14.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.  相似文献   

15.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.  相似文献   

16.
Waveguide multilayer optical card (WMOC) is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling & processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic (VB) language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.  相似文献   

17.
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's.  相似文献   

18.
It is a key problem to accurately calculate beam spots' center of measuring the warp by using a collimated laser. A new method, named double geometrical center method (DGCM), is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device (CCD) is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What's more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.  相似文献   

19.
The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.  相似文献   

20.
Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.  相似文献   

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