硅基量子点的制备及其发光特性

硅基光电子学无疑是今后光电子学发展的方向，这就要求硅基材料能够满足发光器件的要求，从而达到光电集成的目的。因为硅体具有非直接带隙的特点，共发光效率低，所以利用硅基低维量子结构，尤其是量子点结构提高硅基材料的发光性能一直是国内外本领域的一个研究特点。本文对近年来硅基量子点的制备及发光特性研究所取得的进展和结果进行了总结和评述，并对今后的发展提出了看法。     

半导体量子点的发光性质研究

用PL谱测试研究了半导体量子点的光致发光性能,分析了不同In组分覆盖层对分子束外延生长的量子点发光特性的影响,及导致发光峰红移的原因.结果显示,In元素有效抑制界面组分的混杂,使得量子点的均匀性得到改善,PL谱半高宽变窄.用InAs覆盖的In0.5Ga0.5As/GaAs自组织量子点实现了1.3um发光.     

量子点发光显示器件

量子点发光二极管（QD—LEDs）是将有机小分子OLED与可发光无机量子点（QD）结合起来而形成的一种新技术。量子点LED既具有聚合物的可溶性，容易制造的优点。同时还具有潜在的类似于磷光材料的高发光效率。     

II-VI族半导体量子点的发光特性及其应用研究进展

半导体量子点由于具有独特的发光特性而具有极高的应用价值。结合本实验室的工作介绍了半导体量子点的发光原理和发光特性，在实验中发现核壳结构的CdSe／CdS半导体量子点比没有包覆的CdSe半导体量子点的发光稳定性提高．吸收光谱和发射光谱均发生红移，而且粒径不同．半导体量子点所呈现的颜色也不同，随着粒径的增加吸收光谱和发射光谱向长波方向红移。介绍了半导体量子点在光电子器件和生物医学方面的应用．并对其发展前景进行了展望。     

发光层厚度对基于CdSSe/ZnS量子点LED性能的影响

采用粒径约为10 nm的CdSSe/ZnS量子点层作为发光层,制备了叠层结构的量子点发光器件,研究了量子点层厚度对其薄膜形貌及量子点发光二极管性能的影响.原子力显微镜测试结果表明:量子点层过厚时,量子点颗粒发生团聚,且随着厚度的降低,团聚现象减弱;当量子点层厚度和量子点粒径相当时(约为10 nm),量子点呈单层排列且团聚现象基本消失;而量子点层厚度低于10 nm时,薄膜出现孔洞缺陷.器件的电流-电压-亮度等测试结果表明:量子点发光二极管中量子点层厚度与器件的光电特性密切相关,量子点层厚度为10 nm的器件光电性能最优,具有最低的启亮电压4.2V,最高的亮度446 cd/m2及最高的电流效率0.2 cd/A.这种通过控制旋涂转速改变量子点层厚度的方法操作简单、重复性好,对QD-LED的研究具有一定应用价值.     

基于锗量子点的硅基发光器件

硅基光源是实现硅基集成光电子芯片的核心器件,虽然近年来国内外已经取得多项重要成果,但适合于下一代大规模光电集成芯片的小尺寸、低功耗、工艺兼容的高效硅基发光器件仍然缺乏。文章介绍了基于嵌入光学微腔中的锗量子点实现硅基发光器件方面的研究成果,通过将分子束外延生长的锗自组装量子点嵌入硅光子晶体微腔中,实现了室温下处于通信波段的共振发光。通过在图形化衬底上生长实现锗量子点的定位,并精确嵌入光子晶体微腔中,实现了基于锗单量子点的硅基发光器件。     

自组织生长InAs量子点发光的温度特性

本文报道ＩｎＡｓ／ＧａＡｓ自组织生长量子点结构中发光的温度特性．在１２～１５０Ｋ温度范围内，实验测得的ＩｎＡｓ激子发光能量随温度增加明显红移，其红移速率远大于ＩｎＡｓ带隙的温度关系，而光谱宽度则明显减小．这些结果表明ＩｎＡｓ量子点结构是一种强耦合系统，局域在ＩｎＡｓ量子点中的载流子波函数会相互交途、相互贯穿，从而增强了载流子的弛豫过程．     

量子点发光器件的制备与仿真分析

为研究量子点发光器件结构与性能的关系,制备了以CdSe/ZnS量子点作为发光层、poly-TPD作为空穴传输层,Alq3作为电子传输层的量子点发光二极管,对器件结构及性能参数进行了表征,结果显示器件具有开启电压低、色纯度高等特点.结合测试数据,对量子点发光二极管进行了器件结构建模,利用隧穿模型及空间电荷限制电流模型对实验结果进行了分析,研究了器件中载流子的注入与传输机理.器件测试与仿真结果表明:各功能层厚度会影响载流子在量子点层的注入平衡,同时器件中载流子的注入与传输存在一转变电压,当外加电压低于转变电压时,器件中载流子的注入主要符合隧穿模型;当外加电压高于转变电压时,器件中载流子的注入主要符合空间电荷限制电流模型.研究结果验证了器件结构建模的合理性,可以利用仿真的方法进行器件结构优化并确定相关参数,这对器件性能的提高具有指导意义.     

面向显示应用的量子点发光器件研究进展

胶体量子点是一种半径接近于激子玻尔半径的新型优质光电材料,其特殊的尺寸效应使其能通过调整尺寸大小实现高纯度的三原色发光、连续可调的光谱以及宽色域.量子点特殊的核壳结构保证了其良好的光/热稳定性;同时,量子点还具有优异的可溶液处理特性,是显示领域研究的热门材料.基于量子点构筑的量子点发光二极管器件也一直被看作是有望取代有...     

DNA Programmable Peroxidase Activity of Oxidized Polypyrrole Quantum Dots

Significant progress has recently been made in the application of oxidized graphene (GO) quantum dots as enzyme mimics in various biomedical fields due to their bio-compatibility and excellent solubility in physiological media. However, their catalytic performance and controllability are barely satisfactory. Here, this study constructs oxygen-functionalized polypyrrole quantum dots (o-ppy QDs) with excellent peroxidase activity in a mild condition. Compared with oxidized graphene QDs, o-ppy QDs exhibit superior catalytic efficiency (120 times higher than HRP). More importantly, it is found that guanine (G) and adenine (A) bases possess higher binding affinities to o-ppy QDs. G base is able to significantly increase the peroxidase activity while A base decreases the activity, providing a fascinating method to precisely regulate the catalytic activity of o-ppy QDs in a programmable manner by the design of DNA sequences. The enhancement on the peroxidase by G base regulation is attributed to the existence of carbonyl group that promotes its catalytic activity, while A base tends to block the original carbonyl group on o-ppy QDs. Based on this feature, a colorimetric and fluorescent dual-mode biosensor for detecting DNA methylation is developed. This study holds significant theoretical and practical implications for the development of nanozymes and precise regulation of their catalytic activity.     

Sustainable and Self‐Enhanced Electrochemiluminescent Ternary Suprastructures Derived from CsPbBr3 Perovskite Quantum Dots

Lead halide perovskite quantum dots (QDs) are promising electrochemiluminescence (ECL) nanoemitters due to their fascinating photophysical properties. However, due to their poor structural stability against the external environment, the trade‐off between their colloidal stability and carrier injection/transport efficiency is a major challenge in the advancement of perovskite‐based ECL technology. In this work, intense and stable ECL from CsPbBr₃ (CPB) QDs is achieved by simultaneously encapsulating CPB QDs and coreactant (CoR) into in situ generated SiO₂ matrix via hydrolysis of tetramethyl orthosilicate. The well‐designed architecture of the as‐obtained CPB‐CoR@SiO₂ nanocomposites (NCs) guarantees not only greatly improved stability thanks to the peripheral SiO₂ protecting matrix, but also efficient self‐enhanced ECL between CPB and the intra‐coreactants. Consequently, by elaborately selecting the CoR molecules with different tertiary/secondary amines and functional groups, multifold higher (up to 10.2 times) ECL efficiencies are obtained for the CPB‐CoR@SiO₂ NCs alone in reference to the standard Ru(bpy)₃²⁺/tri‐n‐propylamine system. This work provides an efficient design strategy for obtaining stable and highly efficient ECL from perovskite QDs, and offers a new perspective for the development and application of perovskite‐based ECL system.     

A Facile Microwave Avenue to Electrochemiluminescent Two‐Color Graphene Quantum Dots

With the assistance of microwave irradiation, greenish‐yellow luminescent graphene quantum dots (gGQDs) with a quantum yield (QY) up to 11.7% are successfully prepared via cleaving graphene oxide (GO) under acid conditions. The cleaving and reduction processes are accomplished simultaneously using microwave treatment without additional reducing agent. When the gGQDs are further reduced with NaBH₄, bright blue luminescent graphene quantum dots (bGQDs) are obtained with a QY as high as 22.9%. Both GQDs show well‐known excitation‐dependent PL behavior, which could be ascribed to the transition from the lowest unoccupied molecular orbital (LUMO) to the highest occupied molecular orbital (HOMO) with a carbene‐like triplet ground state. Electrochemiluminescence (ECL) is observed from the graphene quantum dots for the first time, suggesting promising applications in ECL biosensing and imaging. The ECL mechanism is investigated in detail. Furthermore, a novel sensor for Cd²⁺ is proposed based on Cd²⁺ induced ECL quenching with cysteine (Cys) as the masking agent.     

一种表面修饰的CdS量子点的合成与特征分析

用无机成核/有机包裹方法成功合成了3～4nm的CdS量子点;用巯基丙三醇(1t鄄hiogly鄄cerol)对CdS量子点进行了表面修饰;对CdS量子点进行了在水溶液中的分散性实验,同时用透     

单分散闪锌矿型CdSe量子点的合成及表征

采用TOPO辅助油相合成的化学方法制备出单分散的CdSe量子点。通过透射电子显微镜、X射线粉末衍射、粒径分布、紫外-可见吸收光谱和光致发光谱等多种测试手段对产物进行了表征,结果表明,CdSe量子点具有闪锌矿型(立方)晶体结构、粒径均匀、尺寸分布窄、发光性能良好的特点。此外,对闪锌矿型CdSe量子点的形成进行了初步分析。     

量子点合成及其光电功能薄膜研究进展

量子点(quantum dots,QDs),也被称为半导体纳米晶体,得益于其廉价的制造成本和独特的光学物理学特性,已经广泛应用于光电探测器和太阳能电池的设计和开发.而量子点的合成则是制备光电探测器和太阳能电池的重要组成部分之一.本文对几种不同的量子点合成技术进行了概述,对国内外不同的基于量子点的光电探测器和太阳能电池进...     

有机包裹的Ⅱ-Ⅵ族半导体量子点的制备与表征

介绍了单分散量子点的无机成核/有机包裹的合成方法,并通过选择性沉淀可以得到单分散的半导体量子点;介绍了TEM,XRD,UVV-is吸收谱对纳米Ⅱ-Ⅵ族量子点的表征。     

In Situ Electrical Characterization of Anatase TiO2 Quantum Dots

A novel method for performing in situ characterization of the electrical properties of pristine, ultrafine nanopowders is reported. A modified dilatometer, with a spring‐loaded push rod and electrodes, allows for the simultaneous monitoring of the packed nanopowder's lateral displacement as well as its complex impedance spectroscopy as a function of temperature within a controlled environment. Anatase TiO₂ quantum dots of 2 nm diameter, on average, are examined and found to simultaneously shrink and become more resistive upon initial heating. The resistance changes by approximately 3 orders of magnitude upon heating, associated with the desorption of adsorbed water, demonstrating the need for sample preconditioning. Subsequent electrical resistivity measurements, as a function of oxygen partial pressure, over approximately 40 orders of magnitude, at temperatures between 300 °C and 400 °C, exhibit nearly 9 orders of magnitude change in conductivity. The data are consistent with a Frenkel‐based defect disorder model characterized by an enthalpy of reduction of 5.5 ± 0.5 eV.     

ECR-PEMOCVD法在GaAs(001)衬底上制备GaN量子点

报道了用电子回旋共振(ECR)等离子体增强金属有机化学气相沉积(PEMOCVD)方法在GaAs(001)衬底上成功地制备出GaN量子点.原子力显微镜(AFM)测量表明成核密度高达1010cm-2,量子点直径约为30nm.采用300℃低温氮化,600℃退火和500℃缓冲层,600℃退火工艺制备.GaN量子点的密度和大小由制备温度和时间所控制.最后讨论了量子点成核的机制.     

多孔硅上生长Ge量子点的光学特性

采用量子尺寸的多孔硅作为衬底 ,利用区域优先成核在多孔硅表面上成功地生长了 Ge量子点 .由于量子限制效应锗的 PL 谱发生了明显的蓝移 ,计算表明在傅里叶红外光谱中观察到的中红外 (5— 6 μm)吸收峰是源于量子点中的亚能带跃迁 (两个重空穴能级之间的跃迁 ) ,这为 Ge量子点红外光探测器的应用提供了理论基础