Novel fabrication of an SnO(2) nanowire gas sensor with high sensitivity

We fabricated a nanowire-based gas sensor using a simple method of growing SnO(2) nanowires bridging the gap between two pre-patterned Au catalysts, in which the electrical contacts to the nanowires are self-assembled during the synthesis of the nanowires. The gas sensing capability of this network-structured gas sensor was demonstrated using a diluted NO(2). The sensitivity, as a function of temperature, was highest at 200?°C and was determined to be 18 and 180 when the NO(2) concentration was 0.5 and 5?ppm, respectively. Our sensor showed higher sensitivity compared to different types of sensors including SnO(2) powder-based thin films, SnO(2) coating on carbon nanotubes or single/multiple SnO(2) nanobelts. The enhanced sensitivity was attributed to the additional modulation of the sensor resistance due to the potential barrier at nanowire/nanowire junctions as well as the surface depletion region of each nanowire.     

氧化锡纳米线的制备及其乙醇气体敏感性能

采用热蒸发法成功制备氧化锡纳米线。用X射线衍射、扫描电子显微镜和透射电子显微镜对所制备纳米线的晶格结构和表面形貌进行表征。所制材料为金红石氧化锡单晶结构,纳米线直径为50~200nm,长度为5~15μm,符合气-液-固生长机制。以氧化锡为气敏材料,制备了旁热式结构气敏元件,测试该元件对浓度范围为25×10^-6 ~500×10^-6 的乙醇气体环境的敏感性能。结果表明,该元件的最佳工作温度约为260℃;在25×10^-6 和500×10^-6 的乙醇气体中,灵敏度分别为7.54和111.01,响应时间为2~20s,恢复时间为5~33s;在测试范围内灵敏度与气体浓度具有良好的线性关系;7天内重复测量误差在5%以内,稳定性较好。     

The template-free synthesis of square-shaped SnO(2) nanowires: the temperature effect and acetone gas sensors

Square-shaped single-crystalline SnO(2) nanowires and their sphere-like hierarchical structures were synthesized successfully with a template-free hydrothermal approach. It was found that an intermediate phase-Na(2)Sn(OH)(6)-is first produced because it is slow to dissolve in ethanol/water media. The intermediate phase gradually decomposes and converts into SnO(2) at temperatures higher than 200?°C. The reaction temperature also affects the microstructure of SnO(2) nanomaterials. Uniform square-shaped SnO(2) nanowires, which form sphere-like hierarchical structures in 100% structure yield, can be produced at 285?°C on a large scale. The diameter of the nanowires shows a decrease accompanying the increase of the reaction temperature. The temperature effect could be a result of the faster and oriented growth of SnO(2) nanowires along their [Formula: see text] direction at higher temperature. Chemical sensors constructed with square-shaped SnO(2) nanowires exhibit excellent stability, good sensitivity and selectivity, as well as a quick response and short recovery times under exposure to acetone gas in practical applications.     

Development of a detection sensor for lethal H2S gas

The gas which may be lethal to human body with short-term exposure in common industrial fields or workplaces in LAB may paralyze the olfactory sense and impose severe damages to central nervous system and lung. This study is concerned with the gas sensor which allows individuals to avoid the toxic gas that may be generated in the space with residues of organic wastes under 50 degrees C or above. This study investigates response and selectivity of the sensor to hydrogen sulfide gas with operating temperatures and catalysts. The thick-film semiconductor sensor for hydrogen sulfide gas detection was fabricated WO3/SnO2 prepared by sol-gel and precipitation methods. The nanosized SnO2 powder mixed with the various metal oxides (WO3, TiO2, and ZnO) and doped with transition metals (Au, Ru, Pd Ag and In). Particle sizes, specific surface areas and phases of sensor materials were investigated by SEM, BET and XRD analyses. The metal-WO3/SnO2 thick films were prepared by screen-printing method. The measured response to hydrogen sulfide gas is defined as the ratio (Ra/R,) of the resistance of WO3ISnO2 film in air to the resistance of WO3/SnO2 film in a hydrogen sulfide gas. It was shown that the highest response and selectivity of the sensor for hydrogen sulfide by doping with 1 wt% Ru and 10 wt% WO3 to SnO2 at the optimum operating temperature of 200 degrees C.     

Functionalization of selectively grown networked SnO2 nanowires with Pd nanodots by γ-ray radiolysis

γ-ray radiolysis is applied to synthesizing Pd nanodots on networked SnO(2) nanowires. The growth behavior of Pd nanodots is systematically investigated as a function of the precursor concentration, illumination intensity, and exposure time of the γ-rays. These factors greatly influence the growth behavior of the Pd nanodots. Selectively grown networked SnO(2) nanowires are uniformly functionalized with Pd nanodots by the radiolysis process. The NO(2) sensing characteristics of the Pd-functionalized SnO(2) nanowires are compared with those of bare SnO(2) nanowires. The results indicate that γ-ray radiolysis is an attractive means of functionalizing the surface of oxide nanowires with catalytic Pd nanodots. Moreover, the Pd-functionalization greatly enhances the sensitivity and response time in SnO(2) nanowire-based gas sensors.     

Improvement in sensing properties of SnO2 nanowires by functionalizing with Pt nanodots synthesized by gamma-ray radiolysis

Selectively-grown networked SnO2 nanowires were functionalized with Pt nanodots by the radiolysis process. NO2 sensing characteristics of Pt-functionalized SnO2 nanowires were compared with those of bare SnO2 nanowires. The results demonstrate that the Pt functionalization greatly enhances the sensitivity and response time in SnO2 nanowire-based gas sensors. The enhancement is likely to be associated with the spillover effect and/or easy dissociation of NO2 into more active chemical species by the catalytic effect of Pt.     

Cd2SnO4水热制备及其气敏性能研究

以SnCl4.5H2O、CdCl2·1/2H2O和NaOH为原料,采用水热法制备了Cd2SnO4粒子。通过XRD和SEM对其物相和形貌进行了分析,并将其制成气敏元件,进行气敏性能测试。结果表明制得的Cd2SnO4粒子为多面体,对乙醇、丙酮和三乙胺有较高的灵敏度和好的响应-恢复特性。     

Highly conductive coaxial SnO(2)-In(2)O(3) heterostructured nanowires for Li ion battery electrodes

Novel SnO(2)-In(2)O(3) heterostructured nanowires were produced via a thermal evaporation method, and their possible nucleation/growth mechanism is proposed. We found that the electronic conductivity of the individual SnO(2)-In(2)O(3) nanowires was 2 orders of magnitude better than that of the pure SnO(2) nanowires, due to the formation of Sn-doped In(2)O(3) caused by the incorporation of Sn into the In(2)O(3) lattice during the nucleation and growth of the In(2)O(3) shell nanostructures. This provides the SnO(2)-In(2)O(3) nanowires with an outstanding lithium storage capacity, making them suitable for promising Li ion battery electrodes.     

Fabrication and optical properties of mesoporous SnO2 nanowire arrays

Large-scale SnO2 mesoporous nanowires have been successfully synthesized by an improved sol-gel method within the nanochannels of porous anodic alumina templates. In this method, chloride of stannic and urea are used as precursors, chloride of stannic is acting as source of tin ions, and urea offers a basic medium through its hydrolysis. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and selected-area electron diffraction are used to characterize the SnO2 mesoporous nanowires. It is found that the as-prepared nanowires consist of SnO2 nanoparticles and pores. They can be indexed as rutile structures and diameters are about 50-70 nm. The growth mechanism of the mesoporous nanowires is also been discussed. The band gap of the as-prepared mesoporous nanowires is 3.735 eV, determined by UV/visible absorption spectral results. The SnO2 mesoporous nanowires show strong and stable photoluminescence with emission peak centered at 3.730 eV, which has never been reported in nanowires. It could be attributed to the exciton recombination.     

Sn-catalyzed synthesis of SnO2 nanowires and their optoelectronic characteristics

We report the rational synthesis of one-dimensional SnO(2) nanowires (SnO(2)NWs) via a Sn-catalyzed vapor-liquid-solid (VLS) growth mechanism, in which Sn nanoparticles can direct the oriented growth of SnO(2)NWs at high temperature. I-V measurement of a field effect transistor made of individual SnO(2)NWs exhibits typical n-type semiconducting characteristics with an electron mobility and concentration of 14.36?cm(2)?V( - 1)?s( - 1) and 1.145 × 10(17)?cm( - 3), respectively. The SnO(2)NW-based photodetector shows a high sensitivity to UV light radiation, and a fast light response speed of millisecond rise time/fall time with excellent stability and reproducibility, whereas it is nearly blind to illumination with wavelengths in the visible range. Detailed reasons to account for the detection selectivity and rapid response speed are proposed. The generality of the above results suggests that our SnO(2)NW photodetectors have potential application in nanoscaled optoelectronic devices.     

The structure and photoluminescence properties of Bi2O3-core/SnO2-shell nanowires

Bi2O3-core/SnO2-shell nanowires have been prepared by using a two-step process: thermal evaporation of Bi2O3 powders and sputtering of SnO2. The crystalline nature of the Bi2O3-core/SnO2-shell nanowires has been revealed by high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED). TEM analysis and X-ray diffraction (XRD) results indicate that the Bi2O3-core/SnO2-shell nanowires consist of pure tetragonal alpha-Bi2O3-phase momocrystalline cores and tetragonal SnO2-phase polycrystalline shells. The photoluminescence (PL) measurements show that Bi2O3 nanowires have a broad emission band centered at around 560 nm in the yellow-green region. On the other hand, the Bi2O3-core/SnO2-shell coaxial nanowires with the sputtering times of 4 and 8 min have a blue emission band centered at around 450 nm. In contrast, those with a sputtering time of 10 min have a broad emission band centered at approximately 550 nm again. The origin of this yellow-green emission from the core/shell nanowires, however, quite differs from that from Bi2O3 nanowires, i.e., it is not from the Bi2O3 cores but from the SnO2 shells.     

Direct growth of oxide nanowires on CuOx thin film

Oxide nanowires were directly grown on a CuO(x) thin film deposited by plasma-enhanced atomic layer deposition without additional metal catalysts. Oxide nanowires would exhibit metal-catalyst-free growth on the CuO(x) thin film with oxide materials diffused on the top. Through a focused ion beam and transmission electron microscopy, we could verify that SnO(2) and ZnO nanowires were grown as single-crystalline structures just above the CuO(x) thin film. Bottom-gate structural SnO(2) and ZnO nanowire transistors exhibited mobilities of 135.2 and 237.6 cm(2) V(-1) s(-1), respectively. We anticipate that a variety of large-area and high-density oxide nanowires can be grown at low cost by using the CuO(x) thin film.     

Nanowires assembled SnO2 nanopolyhedrons with enhanced gas sensing properties

Self-assembly of one-dimensional nanoscale building blocks into functional 2-D or 3-D complex superstructures has stimulated a great deal of interest. We report the synthesis and characterization of nanopolyhedrons assembled from ultrathin SnO(2) nanowires based on the sodium dodecyl sulfate (SDS)-assisted hydrothermal process. As-synthesized SnO(2) nanopolyhedrons have uniform diameters around 300 nm and are self-assembled by numerous ultrathin SnO(2) nanowires with diameters of 5-10 nm. The growth mechanism was also studied by investigating the samples synthesized at different reaction time. Thin films of the assembled SnO(2) nanopolyhedrons were configured as high performance sensors to detect methanol, ethanol, and acetone, which exhibited 1 ppm sensitivity, very fast response and recovery times (several seconds for different gases with concentrations of 1-200 ppm) to all the target gases and highly selective detection to acetone.     

Dense doping of indium to coral-like SnO2 nanostructures through a plasma-assisted strategy for sensitive and selective detection of chlorobenzene

A plasma-assisted strategy for densely doping indium to SnO(2) nanostructures for gas-sensing applications is reported. The morphology, structure, and composition of the as-prepared nanostructures were characterized by field emission scanning electronic microscopy (FESEM), transmission electron microscopy (TEM), x-ray diffraction (XRD), and x-ray photoelectron spectrometry (XPS), respectively. The results show that the densities of hydroxyl and carboxyl groups of the coral-like SnO(2)/carbonaceous nanocomposites are remarkably improved by using a plasma treatment (PT), which enables them to adsorb a large quantity of indium ions and thereby enhance the doping. In gas-sensing measurements, it is found that the sensor is sensitive to chlorobenzene with a high response and short response and recovery times. Besides, the gas-sensing properties of the sensor based on the In-doped SnO(2) with PT are greatly improved compared with sensors based on In-doped SnO(2) without PT and pure SnO(2). The enhanced doping and the special coral-like structure are demonstrated as the mechanism of improvement. The kinetic processes of gas adsorption and desorption are also investigated. Furthermore, it is revealed that chlorobenzene can be clearly identified from some gas references by using principal component analysis, exhibiting a good selectivity. Our findings not only provide a promising building block for developing a sensitive and selective gas sensor for environmental monitoring, but also demonstrate a novel plasma-assisted strategy which could be potentially developed as a general method for dense doping of nanomaterials.     

甲苯传感器的制作及特性

采用溶胶-凝胶法制备了NASICON(钠超离子导体)固体电解质材料.利用XRD分析了所制备材料的结构,材料的平均粒径约为22nm.以NASICON为离子导电层,Sm_2O_3为敏感电极制作了具有良好敏感特性的C_7H_8气体传感器.在430℃工作温度下,器件对(5-50)×10~(-6)C_7H_8的灵敏度为-75mV/decade.并且对C_7H_8具有较高的选择性和良好的响应恢复特性,器件对5 × 10~(-6)和50×10~(-6)C_7H_8的响应时间分别为45和35秒,恢复时间分别为8和60秒.对器件的敏感机理做以简要的分析.     

Fabrication of reliable semiconductor nanowires by controlling crystalline structure

One-dimensional SnO(2) nanomaterials with wide bandgap characteristics are attractive for flexible and/or transparent displays and high-performance nano-electronics. In this study, the crystallinity of SnO(2) nanowires was regulated by controlling their growth temperatures. Moreover, the correlation of the crystallinity of nanowires with optical and electrical characteristics was analyzed. When SnO(2) nanowires were grown at temperatures below 900?°C, they showed various growth directions and abnormal discontinuity in their crystal structures. On the other hand, most nanowires grown at 950?°C exhibited a regular growth trend in the direction of [100]. In addition, the low temperature photoluminescence measurement revealed that the higher growth temperatures of nanowires gradually decreased the 500 nm peak rather than the 620 nm peak. The former peak is derived from the surface defect related to the shallow energy level and affects nanowire surface states. Owing to crystallinity and defects, the threshold voltage range (maximum-minimum) of SnO(2) nanowire transistors was 1.5 V at 850?°C, 1.1 V at 900?°C, and 0.5 V at 950?°C, with dispersion characteristics dramatically decreased. This study successfully demonstrated the effects of nanowire crystallinity on optical and electrical characteristics. It also suggested that the optical and electrical characteristics of nanowire transistors could be regulated by controlling their growth temperatures in the course of producing SnO(2) nanowires.     

纳米SnO2、ZnO及ZnO／SnO2复合材料的气敏性能研究

以ZnO、S如纳米颗粒及ZnO／SnO2复合纳米材料分别作为气敏基料制成旁热式气敏元件,运用扫描电镜观察产物的形貌,用静态配气法对浓度为100ppm的甲烷气体进行气敏性能的测试。结果表明,这几类元件的最佳工作温度及灵敏度差异较大,当工作温度为350℃时SnO2纳米颗粒的气敏性能最佳。此温度下,SnO2响应时间和恢复时间也比纯ZnO纳米颗粒分别缩短了2S和3S。     

Enhanced catalytic activity of ultrathin CuO islands on SnO/sub 2/ films for fast response H/sub 2/S gas sensors

H/sub 2/S gas-sensing properties of a novel SnO/sub 2/-CuO structure consisting of ultrathin (/spl sim/10 nm) CuO dotted islands (600 /spl mu/m diameter) on 120-nm thick, sputtered SnO/sub 2/ film are compared with a pure SnO/sub 2/ and a SnO/sub 2/-CuO bilayer sensor. The SnO/sub 2/-CuO-dotted sensor exhibited a high sensitivity of 7.3/spl times/10/sup 3/ at a low operating temperature of 150/spl deg/C. A fast response time of 14 s for 20 ppm of H/sub 2/S gas and a recovery time of 118 s under flowing air have been measured. The electronic interaction due to modulation of the space charge regions between the distributed p-type CuO islands on the n-type SnO/sub 2/ thin-film surface and the presence of adsorbed oxygen on the SnO/sub 2/ support have been analyzed. Dissociated hydrogen available from the CuO-H/sub 2/S interaction spills over and its chemical interaction with the adsorbed oxygen on the SnO/sub 2/ surface is found to play a dominant role in the observed fast response characteristics.     

Rutile structured SnO2 nanowires synthesized with metal catalyst by thermal evaporation method

One-dimensional (1-D) nanostructures such as tubes, rods, wires, and belts have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. Characterizing the mechanical properties of nanostructure is of great importance for their applications in electronics, optoelectronics, sensors, actuators. Wide-bandgap SnO2 semiconducting material (Eg = 3.6 eV at room temperature) is one of the attractive candidates for optoelectronic devices operating at room temperature, gas sensors, and transparent conducting electrodes. The synthesis and gas sensing properties of semiconducting SnO2 nanomaterials have became one of important research issues since the first synthesis of SnO2 nanobelts. Considering the important application of SnO2 in sensors, these structures are not only ideal systems for fundamental understanding at the nanoscale level, but they also have potential applications as nanoscale sensors, resonator, and transducers. The structured SnO2 nanorods have been grown on silicon substrates with Au catalytic layer by thermal evporation process over 800 degrees C. The resulting sample is characterized and analyzed by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and energy-dispersive X-ray spectroscopy (EDS). The morphology and structural properties of SnO2 nanowires were measured by scanning electron microscopy and high-resolution transmission electron microscopy. The mean diameter of the SnO2 nanorods grown on Au coated silicon (100) substrate is approximately 80 nm. In addition, X-ray diffraction measurements show that SnO2 nanorods have a rutile structure. The formation of SnO2 nanowires has been attributed to the vapor-liquid-solid (VLS) growth mechanisms depending on the processing conditions. We investigated the growth behavior of the SnO2 nanowires by variation of the growth conditions such as gas partial pressure and temperature.     

Preparation of porous sea-urchin-like CuO/ZnO composite nanostructure consisting of numerous nanowires with improved gas-sensing performance

A sea-urchin-like CuO/ZnO porous nanostructure is obtained via a simple solution method followed by a calcination process. There are abundant pores among the resulting nanowires due to the thermal decomposition of copper–zinc hydroxide carbonate. The specific surface area of the as-prepared CuO/ZnO sample is determined as 31.3 m²·g⁻¹. The gas-sensing performance of the sea-urchin-like CuO/ZnO sensor is studied by exposure to volatile organic compound (VOC) vapors. With contrast to a pure porous sea-urchin-like ZnO sensor, the sea-urchin-like CuO/ZnO sensor shows superior gas-sensing behavior for acetone, formaldehyde, methanol, toluene, isopropanol and ethanol. It exhibits a high response of 52.6–100 ppm acetone vapor, with short response/recovery time. This superior sensing behavior is mainly ascribed to the porous nanowire-assembled structure with abundant p–n heterojunctions.