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1.
ZnO nanowire arrays were synthesized on zinc foil by a simple thermal evaporation process at relatively low temperature. Morphology and size controlled synthesis of the ZnO nanostructures was achieved by variation of the synthesis temperature, reaction time and the surface roughness of the substrate. A gas-solid and self-catalytic liquid-solid mechanism is proposed for the growth of nanowires at different temperatures. High-resolution transmission electron microscopy (HRTEM) showed that the as-grown nanowires were of single crystal hexagonal wurtzite structure, growing along the [101] direction. Photoluminescence exhibited strong UV emission at ~382?nm and a broad green emission at ~513?nm with 325?nm excitation. Raman spectroscopy revealed a phonon confinement effect when compared with results from bulk ZnO. The nanowire arrays also exhibited a field emission property.  相似文献   

2.
Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal-organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [1\[Evec]0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.  相似文献   

3.
A simple templateless synthesis strategy for titanate nanowire arrays was developed by employing hydrothermal reactions. Hydrothermal treatment of metallic titanium powder with H2O2 in a 10 M NaOH solution produced a new sodium titanate compound, Na2Ti6O13·xH2O (x ∼ 4.2), as arrays of nanowires of lengths up to 1 mm. The nanowires were characterized by using XRD, SEM, TGA, and TEM. The nanowires have exceptionally large aspect ratios of 5000 or higher, and they can form arrays over a large area of 2 × 3 cm2. Investigations on the reaction products in varied conditions indicate that the array formation requires simultaneously controlled formation and crystal growth rates of the Na2Ti6O13·xH2O phase.  相似文献   

4.
Xiang B  Wang P  Zhang X  Dayeh SA  Aplin DP  Soci C  Yu D  Wang D 《Nano letters》2007,7(2):323-328
We report, for the first time, the synthesis of the high-quality p-type ZnO NWs using a simple chemical vapor deposition method, where phosphorus pentoxide has been used as the dopant source. Single-crystal phosphorus doped ZnO NWs have their growth axis along the 001 direction and form perfect vertical arrays on a-sapphire. P-type doping was confirmed by photoluminescence measurements at various temperatures and by studying the electrical transport in single NWs field-effect transistors. Comparisons of the low-temperature PL of unintentionally doped ZnO (n-type), as-grown phosphorus-doped ZnO, and annealed phosphorus-doped ZnO NWs show clear differences related to the presence of intragap donor and acceptor states. The electrical transport measurements of phosphorus-doped NW FETs indicate a transition from n-type to p-type conduction upon annealing at high temperature, in good agreement with the PL results. The synthesis of p-type ZnO NWs enables novel complementary ZnO NW devices and opens up enormous opportunities for nanoscale electronics, optoelectronics, and medicines.  相似文献   

5.
The authors report on the water repellent properties of quasialigned zinc oxide (ZnO) nanowire arrays grown by low-temperature solvothermal technique. The uniform and dense ZnO nanowires of average diameter ∼ 75 nm have been found to have hexagonal wurtzite type structure. The as synthesized ZnO nanowire surfaces have hydrophilic nature with a water contact angle of 73° ± 3°. The superhydrophobic behavior with a water contact angle of 145° ± 3° of the nanowire arrays has been realized due to the reduction of surface free energy after being coated with an octadecyltrichlorosilane (OTS) monolayer. This work may be of huge importance from the viewpoint of both the understanding of the mechanisms involved and industrial applications.  相似文献   

6.
《Materials Letters》2007,61(8-9):1693-1697
CuS nanorods of length 60–100 nm and 15 nm in diameter have been synthesized by simple wet chemical method at 105 °C using CuCl2·2H2O as Cu-precursor, CS2 as S-source and ethylenediamine as the attacking reagent. The plausible reaction mechanism has been proposed and the effect of reaction temperature on morphology has been discussed. X-ray diffraction (XRD) pattern suggests the formation of hexagonal phase CuS. The morphology of the products has been studied by transmission electron microscope (TEM) analysis. A detailed optical study has also been done.  相似文献   

7.
Lee M  Yong K 《Nanotechnology》2012,23(19):194014
Here, a facile approach for the fabrication of CuS nanoparticle (NP)/ZnO nanowire (NW) heterostructures on a mesh substrate through a simple two-step solution method is demonstrated. Successive ionic layer adsorption and reaction (SILAR) was employed to uniformly deposit CuS NPs on the hydrothermally grown ZnO NW array. The synthesized CuS/ZnO heterostructure NWs exhibited superior photocatalytic activity under visible light compared to bare ZnO NWs. This strong photocatalytic activity under visible light is due to the interfacial charge transfer (IFCT) from the valence band of the ZnO NW to the CuS NP, which reduces CuS to Cu(2)S. After repeated cycles of photodecolorization of Acid Orange 7 (AO7), the photocatalytic behavior of CuS/ZnO heterostructure NWs exhibited no significant loss of activity. Furthermore, our CuS/ZnO NWs/mesh photocatalyst floats in solution via partial superhydrophobic modification of the NWs.  相似文献   

8.
Water-soluble CuS nanocrystals and nanorods were prepared by reacting copper acetate with thioacetamide in the presence of different surfactants and capping agents. The size of the nanocrystals varied from 3–20 nm depending on the reaction parameters such as concentration, temperature, solvent and the capping agents. The formation of nanocrystals was studied by using UV-visible absorption spectroscopy.  相似文献   

9.
采用多孔阳极氧化铝(AAO)作为模板,运用电化学沉积法在模板的微孔中组装金属Ni纳米线,然后用磷铬酸蚀刻表层AAO模板,暴露出规整有序、具有可控长度的Ni纳米线阵列.分别用SEM、TEM与SAED对Ni纳米线阵列进行了表征.研究了蚀刻时间与AAO模板质量的减少及暴露出来的Ni纳米线阵列长度之间的关系.结果表明,磷铬酸是较NaOH溶液更为温和有效的AAO模板蚀刻剂,通过控制模板溶解时间,可以实现对裸露于AAO模板外纳米线长度的精细有效控制.该蚀刻方法普遍适用于以AAO为模板所制得的准一维纳米阵列结构.  相似文献   

10.
Highly ordered hydroxyapatite (HA) nanowire arrays were synthesized using porous anodic aluminum oxide (AAO) template from sol-gel solution containing P2O5 and Ca(NO3)2. Theresults of transmission electron microscopy (TEM) and scanning electron microscopy(SEM) revealed that the obtained HA nanowires had a uniform length and diameter andformed highly ordered arrays, which were determined by the pore diameter and thethickness of the applied AAO template. The results of X-ray diffraction (XRD) and X-rayphotoelectron spectroscopy (XPS) demonstrated that the major component was HA. Theselected-area electron diffraction (SAED) results indicated that HA was a polycrystallinestructure. This novel method of preparing highly ordered HA nanowires with a large areamight be important for many applications in biomaterials.  相似文献   

11.
以多孔阳极氧化铝为模板,采用逆向迁移技术,在模板的纳米孔道内反应形成一维纳米结构前驱体,再经后续处理,制得了Sr2CeO4纳米线.通过X射线衍射光谱(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)等检测手段对产物进行了表征,结果表明,所得Sr2CeO4纳米线阵列排列整齐,单体纳米线的直径大约为60nm,与所用模板的孔径相当,长度可达30μm.  相似文献   

12.
Qingtao Wang 《Materials Letters》2009,63(17):1493-1495
Ordered Cu3Se2 nanowire arrays have been prepared by electrochemical template synthesis based on anodic alumina membranes at room temperature. After annealing in argon ambient at 300 °C for 1 h, Cu2Se nanowire arrays were obtained by structural change. Field emission scanning electron microscopy (FE-SEM), x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected-area electron diffraction (SAED) results show that single crystal copper selenides nanowires with a high filling rate are dense, smooth, and uniform in large area. The effects of several electrodeposition parameters on high-filling, stoichiometric and single crystal copper selenides were discussed.  相似文献   

13.
Biran I  Walt DR 《Analytical chemistry》2002,74(13):3046-3054
A high-density, ordered array containing thousands of microwells is fabricated on an optical imaging fiber. Each individually addressable microwell is used to accommodate a single living cell. A charged coupled device (CCD) detector is employed to monitor and spatially resolve the fluorescence signals obtained from each individual cell, allowing simultaneous monitoring of cellular responses of all the cells in the array using reporter genes (lacZ, EGFP, ECFP, DsRed) or fluorescent indicators. Yeast and bacteria cell arrays were fabricated and used to perform multiplexed cell assays with resolution at the single-cell level. Monitoring gene expression in single yeast cells carrying a two-hybrid system was used to detect in vivo protein-protein interactions. The single-cell array technology provides a new platform for monitoring the unique multiple responses of large populations of individual cells from different strains or cell lines. The rich data acquired by the cell array has the potential to be employed as a new tool for cell biology research as well as to improve cell-based high-throughput screening (HTS) applications, such as the validation of new disease-associated cellular targets and the early-stage evaluation of potential drug candidates.  相似文献   

14.
ZnO nanowire arrays have been grown on the ZnO film-coated silicon (100) substrates by hydrothermal method, and the deposited nanowires are found to have a uniform size distribution with sharp hexagonal-shaped tips. The structural and optical properties of the nanowires were investigated using atomic force microscopy (AFM), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and cathodoluminescence (CL) techniques. The XRD and SEM results demonstrate that the well-aligned ZnO nanowires are single crystalline structure formed along the c-axis orientation. TEM analysis further confirms that the ZnO nanowires are highly preferred grown along the (002) crystal plane. The spacing between adjacent (002) lattice planes is estimated as 0.52 nm. The optical properties of the nanowires were measured using CL after annealing in oxygen and nitrogen atmospheres at 550 °C for various times. The CL spectra in the visible spectrum exhibit two weak deep-level emission bands that may be attributed to the intrinsic or extrinsic defects. It can be observed that the ZnO nanowires show different optical behaviors after various annealing times. The dependence of the optical properties on the annealing conditions is also discussed.  相似文献   

15.
High density ZnO nanowire arrays were successfully synthesized without catalyst by direct oxidation of zinc substrate in air below 400 °C, lower than the melting point of zinc metal. The as-grown ZnO nanowires are single crystalline with a Wurzite structure extending in <110> direction. The diameters of the ZnO nanowires range from 20 to 150 nm and the lengths from several to over ten micrometers. Room temperature photoluminescence measurements reveal an intense ultraviolet emission at 397 nm. The present work highlights the promise of the low temperature, direct oxidation process in the high-yield synthesis of high quality semiconductor nanowire arrays for nano-devices.  相似文献   

16.
Lin L  Sun X  Tao R  Feng J  Zhang Z 《Nanotechnology》2011,22(7):075203
Here we prepared vertical and single crystalline porous silicon nanowire (SiNW) arrays using the silver-assisted electroless etching method. The selenization was carried out by annealing the samples in vacuum with selenium atmosphere. The selenization treatment at 700?°C is useful for investigating the photoluminescence (PL) properties of porous SiNWs, with an enhancement of 30 times observed. The observed PL peaks blue-shift to 650 nm and the decomposition of the spectrum reveals that three PL bands with different origins are obtained. It is proved that selenization treatment could remove the Si-H bonds on the surface and form Si-Se bonds, which could increase the absorbance of the SiNWs and also enhance the stability of the PL intensity. These Se-treated porous SiNWs may be useful as nanoscale optoelectronic devices.  相似文献   

17.
Synthesis of silicon nanowires is studied by using a vapor-liquid-solid growth technique. Silicon tetrachloride reduction with hydrogen in the gas phase is used with gold serving as catalyst to facilitate growth. Only a narrow set of conditions of SiCl4 concentration and temperature yield straight nanowires. High concentrations and temperatures generally result in particulates, catalyst coverage and deactivation, and coatinglike materials.  相似文献   

18.
Fang H  Li X  Song S  Xu Y  Zhu J 《Nanotechnology》2008,19(25):255703
Large-area slantingly-aligned silicon nanowire arrays (SA-SiNW arrays) on Si(111) substrate have been fabricated by wet chemical etching with dry metal deposition method and employed in the fabrication of solar cells for the first time. The formation of SA-SiNW arrays possibly results from the anisotropic etching of silicon by silver catalysts. Superior to the previous cells fabricated with vertically-aligned silicon nanowire arrays (VA-SiNW arrays), the SA-SiNW array solar cells exhibit a highest power conversion efficiency of?11.37%. The improved device performance is attributed to the integration of the excellent anti-reflection property of the arrays and the better electrical contact of the cell as a result of the special slantingly-aligned structure. The high surface recombination velocity of minority carriers in SiNW arrays is still the main limitation on cell performance.  相似文献   

19.
Large-area Si nanowire arrays have been fabricated on phosphorus doped Si surface by a facile silver-catalyzed chemical etching process. The solar cell incorporated with Si nanowire arrays shows a power conversion efficiency of 6.69% with an open circuit voltage of 558 mV and a short circuit current density of 25.13 mA/cm2 under AM 1.5 G illumination without using any extra antireflection layer and surface passivation technique. The high power conversion efficiency of Si nanowires based-solar cell is attributed to the low reflectance loss of Si nanowire arrays for incident sunlight. Optimization of electrical contact and phosphorus diffusion process will be critical to improve the performance of Si nanowires-based solar cell in the future.  相似文献   

20.
《Materials Research Bulletin》2006,41(6):1045-1051
A method, whereby metal ions and precipitation reagents were transported in the nanochannels of anodic alumina membrane (AAM) templates by converse diffusion or convection and reacted in situ to form into one-dimensional nanostructure of the precursor, was developed. A high-aspect ratio nanowire array of the LaMnO3+δ was prepared by this method. Electron microscope images showed that the LaMnO3+δ nanowire array was abundant, uniformly distributed and well-ordered in large area. The individual nanowires are about 60 nm in diameter and their length corresponds to the thickness of the applied AAM template. The analysis of X-ray diffractions demonstrated that the LaMnO3+δ nanowires are pseudocubic with typical perovskite lattice parameter.  相似文献   

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