Geometry dependence of coercivity in Ni nanowire arrays

Magnetic properties of arrays of nanowires produced inside the pores of anodic alumina membranes have been studied by means of vibrating sample magnetometer techniques. In these systems the length of the wires strongly influences the coercivity of the array. A simple model for the coercivity as a function of the geometry is presented which exhibits good agreement with experimental results. Magnetostatic interactions between the wires are responsible for a decrease of the coercive field.     

模板法合成分叉Ni纳米线阵列及其磁性能

首先采用三次阳极氧化法制备了具有Y形孔道的氧化铝(AAO)模板,然后采用直流电化学沉积法,在模板内成功合成了分叉Ni纳米线的有序阵列.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)对所合成样品的晶体结构和形貌进行了表征测试.结果表明,制备的Ni纳米线分布均匀、排列有序,呈Y形分又结构,其...     

High mass loading Ni4Coi-OH@CuO core-shell nanowire arrays obtained by electrochemical reconstruction for alkaline energy storage

The design of three-dimensional(3D)core-shell heterostructures is an efficient method to achieve high mass specific capacity of electroactive materials under hi...     

大规模制备Ni纳米线阵列及其磁学特性研究

在多孔氧化铝模板的纳米孔洞中,利用直流电化学沉积的方法成功地制备了高度有序的磁性金属Ni纳米线阵列.利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线衍射仪(XRD)和物理性质测量系统(PPMS)对样品的形貌、晶体结构和磁学性能进行了表征测试.SEM和TEM观察结果显示,Ni纳米线均匀地生长在氧化铝模板的孔洞中,直径约为300nm,其表面非常光滑.XRD结果显示,生长的Ni纳米线为fcc结构.磁测量结果表明,与体材料相比,Ni纳米线展现出增强的矫顽力和剩磁比,并且表现出较强的磁各向异性,其居里温度约为627K,与块体Ni的居里温度相当,说明在较高温度下,纳米线仍可呈现铁磁特性.     

The dependence of the optoelectrical properties of silver nanowire networks on nanowire length and diameter

We have characterized the optoelectrical properties of networks of silver nanowires as a function of nanowire dimension by measuring transmittance (T) and sheet resistance (R(s)) for a large number of networks of different thicknesses fabricated from wires of different diameters (D) and lengths (L). We have analysed these data using both bulk-like and percolative models. We find the network DC conductivity to scale linearly with wire length while the optical conductivity is approximately invariant with nanowire length. The ratio of DC to optical conductivity, often taken as a figure of merit for transparent conductors, scales approximately as L/D. Interestingly, the percolative exponent, n, scales empirically as D2, while the percolative figure of merit, Π, displays large values at low D. As high T and low R(s) are associated with low n and high Π, these data are consistent with improved optoelectrical performance for networks of low-D wires. We predict that networks of wires with D = 25 nm could give sheet resistance as low as 25 Ω/□ for T = 90%.     

Fabrication of In-doped SnO2 nanowire arrays and its field emission investigations

The field emission of In-doped SnO₂ wire array has been performed in parallel plate diode configuration. A maximum current density of 60?µA/cm² is drawn from the emitter at an applied field of 4?V/µm. The nonlinearity in the Fowler–Nordheim plot, characteristics of semiconductor emitter has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability recorded at a preset value of 1?µA is observed to be good. The high emission current density, good current stability and mechanically robust nature of the wires offer unprecedented advantages as promising cold cathodes for many potential applications based on field emission.     

CoFe2O4纳米线阵列的制备与磁性

在氧化铝模板的纳米孔洞中,用电化学的方法沉积钴铁合金纳米线,经过550℃、30h氧化处理,成功制备出钴铁氧体纳米线阵列.分别用透射电子显微镜(TEM)、X射线衍射仪(XRD)和振动样品磁场计(VSM)对样品的形貌、晶体结构和磁学性质进行了表征测试.TEM观察结果显示纳米线粗细均匀,直径约为70nm.XRD显示纳米线的物相结构为CoFe2O4;VSM测试结果表明,CoFe2O4纳米线阵列的磁滞回线矫顽力为1.190×105A/m,比氧化处理前的钴铁合金纳米线阵列有显著提高.     

Fabrication of large number density platinum nanowire arrays by size reduction lithography and nanoimprint lithography

Large number density Pt nanowires with typical dimensions of 12 microm x 20 nm x 5 nm (length x width x height) are fabricated on planar oxide supports. First sub-20 nm single crystalline silicon nanowires are fabricated by size reduction lithography, and then the Si nanowire pattern is replicated to produce a large number of Pt nanowires by nanoimprint lithography. The width and height of the Pt nanowires are uniform and are controlled with nanometer precision. The nanowire number density is 4 x 10(4) cm(-1), resulting in a Pt surface area larger than 2 cm(2) on a 5 x 5 cm(2) oxide substrate. Bimodal nanowires with different width have been generated by using a Pt shadow deposition technique. Using this technique, alternating 10 and 19 nm wide nanowires are produced.     

Solar energy harnessing in hexagonally arranged Si nanowire arrays and effects of array symmetry on optical characteristics

Investigation of solar energy harvesting in hexagonally arranged Si nanowire (NW) arrays is performed through optimizing the structural parameters, such as array periodicity (P), Si NW diameter (D) and length (L). The results demonstrate that there exist wide P and D/P 'windows' for the Si NW arrays, locating around 600 nm and 0.833 (i.e., D=500 nm), respectively, for achieving enhanced light absorption compared to their thin film counterparts with the same thickness, but with much less materials consumption. Calculation of the ultimate efficiency (UE) indicates that the light trapping capability is not monotonically increased with L, and that UE vibration is found when L is >1000 nm. Comparison of the light absorption spectra for hexagonally and squarely arranged Si NW arrays demonstrates that these two most widely employed array symmetries in practice have little impact on the light trapping capability.     

Structural and magnetic properties of Co and Co71Ni29 nanowire arrays prepared by template electrodeposition

A comparative study on the structural and magnetic properties of Co and Co₇₁Ni₂₉ nanowire arrays prepared by AC electrodeposition in alumina templates has been presented. The Co and Co₇₁Ni₂₉ nanowires observed by SEM and TEM have a 45 nm diameter and exhibit high aspect ratio. Also, the nanowires of both Co and Co₇₁Ni₂₉, determined by XRD, have an identical crystallographic structure. The Co₇₁Ni₂₉ nanowires exist in a cobalt solid solution. Both the as-obtained Co and Co₇₁Ni₂₉ nanowire arrays measured by VSM show obvious magnetic anisotropy, dominated by shape anisotropy. Compared to the Co nanowire arrays, Co₇₁Ni₂₉ nanowire array shows an enhanced coercivity Hc (⊥) and approximate square ratio Mr/Ms(⊥).     

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil

Nickel silicide nanowire arrays have been achieved by the decomposition of SiH(4) on Ni foil at 650?°C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200?nm and tips with diameter of about 10-50?nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7?V?μm(-1), and the field enhancement factor is as high as 4280, so the arrays have promising applications as?emitters.     

Synthesis of Co3O4 nanowire arrays supported on Ni foam for removal of volatile organic compounds

Crystalline Co3O4 nanowire arrays freely supported on Ni foam are successfully synthesized using a template-free method. The effects of reaction time, concentration of reactants, and temperature on the morphology of the nanowires are studied. The results indicate that uniform Co3O4 nanowires could be synthesized at 90 degrees C, and a transformation of the samples' morphology from nanoparticles to nanowires to microrods is observed by controlling the concentration of the reactants. The well-ordered nanowires synthesized under the selected reaction conditions are composed of spinel Co3O4 with diameters of 500-580 nm and lengths of 6-8 microm. These nanowires show good catalytic activity for the ozone catalytic oxidation of toluene.     

Monte Carlo study of MOSFET dosemeter characteristics: dose dependence on photon energy, direction and dosemeter composition

MOSFET dosemeters are emerging as a versatile tool in various medical physics and health physics dose measurements. It is an important but difficult task to understand their energy and directional dependences because of their unique features. This paper presents a study to characterise a MOSFET dosemeter using Monte Carlo simulation method. Monoenergetic photon beams ranging from 15 to 6 MeV were simulated to study the energy and angular dependences. The results were compared with published experimental data. The Monte Carlo model also provided insightful information on optimising the dosemeter design by examining how various regions of the dosemeter contributed to the dose. Detailed energy deposition processes were further analysed by tracking individual particles inside the dosemeter.     

The synthesis and photoluminescence properties of selenium-treated porous silicon nanowire arrays

Here we prepared vertical and single crystalline porous silicon nanowire (SiNW) arrays using the silver-assisted electroless etching method. The selenization was carried out by annealing the samples in vacuum with selenium atmosphere. The selenization treatment at 700?°C is useful for investigating the photoluminescence (PL) properties of porous SiNWs, with an enhancement of 30 times observed. The observed PL peaks blue-shift to 650 nm and the decomposition of the spectrum reveals that three PL bands with different origins are obtained. It is proved that selenization treatment could remove the Si-H bonds on the surface and form Si-Se bonds, which could increase the absorbance of the SiNWs and also enhance the stability of the PL intensity. These Se-treated porous SiNWs may be useful as nanoscale optoelectronic devices.     

Template-assisted CoPd nanowire arrays: magnetic properties and FORC analysis

Highly hexagonally ordered CoPd alloy nanowire arrays were synthesized through electrochemical deposition techniques into the nanopores of anodic alumina membranes used as templates. Two different electrolytes were used for this purpose, one with pH = 4.1 and the other with pH = 7. Under applying different electrodeposition parameters and by adjusting both, the current density and the electrolyte composition, it could be possible make to vary the composition of CoPd alloy nanowires in a wide range. Their composition and morphology were investigated by SEM and EDX. The magnetic properties of the nanowires array have been measured with a VSM as a function of the temperature, ranging from RT down to 50 K, for different CoPd alloy nanowires composition. Also, the temperature influence on the reversible-irreversible magnetization processes related with the magnetization reversal of the CoPd nanowires array has been analyzed by first order reversal curve (FORC) method.     

Growth and Faraday rotation characteristics of TbVO4 crystals

TbVO₄ (TV) single crystals with dimensions of 18 × 18 × 16 mm³ were grown by Czochralski method under different atmosphere. XPS studies revealed the presence of V⁴⁺ and Tb⁴⁺ in TV crystal grown at 99.9% N₂ atmosphere, which caused a wide absorption peak centered at 950 nm in the transmission spectrum. TV crystal grown at 80% N₂ + 20% CO₂ mixed atmosphere has high transmittance at 600–1500 nm waveband. Faraday rotation spectra of TV crystal were measured. TV crystal has a larger Faraday rotation than terbium gallium garnet (TGG) crystal at 500–1500 nm waveband.     

Synthesis and photocatalytic properties of BiOCl nanowire arrays

Bismuth oxychloride (BiOCl) nanowire arrays have been successfully prepared employing the Anodic Aluminum Oxide (AAO) template assisted sol-gel method. Nanowires of 100 nm diameter and length 2-6 μm, assembled in the porous of AAO templates, were formed. XRD and HRTEM results show that the nanowires are pure BiOCl polycrystal phase without Bi₂O₃ or BiCl₃. The photocatalytic activity of BiOCl nanowire arrays was investigated by the degradation of Rhodamine B dye solution under UV irradiation.     

铁纳米线阵列的制备及磁性质

使用电化学沉积方法，在有序的氧化铝模板（AAO）孔洞中制备了铁纳米线有序阵列．用X射线衍射仪（XRD）、场发射扫描电子显微镜（FE-SEM）、透射电子显微镜（TEM）、对样品的结构、形貌、进行表征和观测．XRD的结果表明所制备的样品为纯的立方面心铁．SEM的图片清晰地说明铁纳米线阵列是大面积、高填充率和高度有序的．TEM的结果显示纳米线直径均匀、表面光滑且长径比大．磁测量的结果表明纳米线阵列的易磁化轴是垂直于模板表面的。