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将遗传算法与全电磁粒子模拟算法有机融合,研制出二维全电磁粒子模拟并行优化程序。据此对高功率微波源器件——磁绝缘线振荡器(MILO)和超辐射返波管(SRBWO)进行优化设计。将束波转换效率作为优化目标,在输入功率基本不变的情况下,优化后的磁绝缘线振荡器的效率比原模型提高38.8%;将超辐射相对论返波管的峰值输出功率作为优化目标,优化后的器件峰值输出功率比原来提高了37.5%,束波转化效率提高了50%;将超辐射相对论返波管的输出微波总能量作为优化目标,输出微波总能量比原来提高了38.1%。经优化后获取的器件模型几何参数合理,物理图像正确。 相似文献
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一种新型电子战武器--高功率微波武器 总被引:3,自引:0,他引:3
高功率微波武器具有作用距离远、频谱覆盖范围广、发射波束宽、功率大、全天候作战等特点,是一种新型的电子战武器,兼具软、硬杀伤作用。介绍了其性能特点、作战应用及对其的防御措施。 相似文献
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提出一种应用于低功率的双频输入微波整流电路,采用双频匹配网络和直通滤波器分别实现二极管的输入匹配和抑制双频的基频与高次谐波,当输入为1 mW 时,实测结果显示,该整流电路在850 MHz 和1.9 GHz 频率处分别获得了47%和81.4%的整流效率,输出电压分别为0.53 V 和0.70 V,在输入双频信号时输出电压为0.85V,转换效率为60.8%,其低功率输入性能在国内具有先进性,并对RFID、嵌入式传感器电子设备无线输能等领域的应用具有实际参考价值。 相似文献
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介绍了一种新型圆极化高功率微波天线,可辐射高功率微波源所产生的 TEM 或 TM_(01)模。该天线由同轴插板式模式转换器和一种新型同轴插板式喇叭组成,模式转换器将输入的同轴 TEM 模转换为4个相位依次相差90°的扇形波导 TE_(11)模,并通过新型喇叭辐射,在轴向上获得了圆极化辐射场。优化设计了一个中心频率为4GHz 的天线,其总长度为385mm,喇叭口径320mm。在中心频率上天线增益为19.3dBi,轴比1.06,反射损耗-20dB。在 3.8~4.2GHz 的频率范围内增益大于18.9dBi,反射损耗小于-10dB。 相似文献
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提出3cm双频两段式同轴相对论返波振荡器,用粒子模拟软件对其结构和电磁参数进行分析研究,优化得到的结构参数为第一、二段分别为10和4个周期数,周期长度分别为0.5cm、0.73cm,波纹幅值分别为0.13cm、0.21cm,平均半径2.9cm,同轴间隙为2.1cm。实验结果表明在环形相对论电子注电压为510kV,电流为9.4kA,引导磁场为0.7T的条件下,器件得到了3cm波段稳定的高功率双频微波输出,其平均功率约为0.75GW,平均功率效率为15.6%。 相似文献
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高功率微波武器—一种新概念电子战武器 总被引:4,自引:0,他引:4
高功率微波武器是定向能武器的组成之一,工作频率一般为1-30GHZ,输出功率达GW级,是电子战新的军事能力的拓展。高功率微波武器主要攻击目标和对象是高技术兵器武器系统中最关键最脆弱的电子设备,可以干扰和破坏其正常工作,毁伤其中的微电子器件和电路,或利用其超强的功率直接烧毁目标;同时也是对付隐身武器、反辐射导弹的克星,还可伤害作战人员,简述了高功率微波武器的目前研制状况和使用情况。 相似文献
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提出了采用两段式同轴波纹慢波结构实现双频高功率微波输出的相对论返波振荡器,推导了该结构的TMOn模式色散方程,数值求解了两段式同轴波纹慢波结构TMOn模色散曲线,分析了该器件X波段双频高功率微波输出的产生机理,分析中考虑了电子注在慢波结构第二段工作效率不变和下降时的双频工作点情况,并运用2.5维全电磁粒子模拟程序验证了双频微波信号的可靠性. 相似文献
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A novel passive dual energy recovery snubber circuit is presented where energy trapped in the snubber inductor and capacitor is recovered into the both DC rail and load, without any active devices or resistors. The maximum over-shoot voltage on the switch is fixed, peak switch current is low, circuit reset is fast and the operational range of load current is wide. This circuit is suitable for use in high frequency, single ended power gate turn-off (GTO) thyrister choppers. Main design equations, some simulations and practical results are included. 相似文献
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This paper presents a nonlinear equivalent circuit model of microwave power GaN high electron-mobility transistors (HEMTs), amenable for integration into commercial harmonic balance or transient simulators. All the steps taken to extract its parameter set are explained, from the extrinsic linear elements up to the intrinsic nonlinear ones. The predictive model capabilities are illustrated with measured and simulated output power and intermodulation-distortion data of a GaN HEMT. The model is then fully validated in a real application environment by comparing experimental and simulated results of output power, power-added efficiency, and nonlinear distortion obtained from a power amplifier. 相似文献
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利用高功率容量高折射率的超材料作为移相介质,设计了一种高功率微波TEM-TE11 模式转换器。采用扇形金
属栅格作为材料阵元,通过对阵元的角向及轴向的周期排布得到高折射率超材料并将其填充在模式变换区角向半空间内。
TEM 模微波在通过模式转换区域之后,超材料填充区域电场与未填充材料的真空区域电场相位差达到180°,从而实现
TEM 模到TE11 模的模式转换。采用CST Microwave Studio 软件对模式转换器进行了数值模拟,结果显示该转换器在工
作频点附近具有较高的转换效率,相对带宽约4%。结合模式变换器开展了辐射天线的设计,模拟得到典型的TE11 模远
场方向图。 相似文献
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《Electron Device Letters, IEEE》1985,6(7):341-343
A microwave power high electron mobility transistor (HEMT) has been developed and tested in theK -band frequency range. The HEMT has a unique configuration of a selectively low-doped (AlGa)As/GaAs/(AlGa)As double heterojunction resulting in both capability of high-current density and high gate breakdown voltage. The structure showed electron mobility of 6800 cm2/V.s and two-dimensional (2-D) electron density as high as 1.2 × 1012cm-2at room temperature. An output power of 660 mW (550 mW/mm) with 3.2-dB gain and 19.3-percent power added efficiency was achieved at 20 GHz with 1-µm gate length and 1.2-mm gate periphery. A similar device with 2.4-mm gate width produced an output power of 1 W with 3-dB gain and 15.5-percent efficiency. These results offer microwave high power capability in a double-heterojunction HEMT (DH-HEMT). 相似文献
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Gi-Ho Yun Hyun-Goo Yoon Han-Kyu Park 《Electronics letters》1998,34(3):238-240
A dual-band power amplifier for a CDMA mobile telephone has been studied. Test results show that the implemented amplifier has achieved the module size of 0.96 cc and significantly reduced the operating current to 120 mA at a real working power range 相似文献
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A miniaturized dual band Wilkinson power divider (WPD) with an ultra wideband harmonic suppression is proposed, in this paper. Capacitor loaded transmission lines (CLTL) are used in the proposed circuit. The proposed WPD has a significant size reduction more than 80% compared to a primary power divider. In the design procedure, values of the impedances and electrical length for all of the applied transmission lines and also applied lumped capacitors are analytically obtained. Results of fabricated power divider have a good agreement with simulated and show that, the insertion loss at two operating frequencies of 0.9 and 1.8 GHz are less than 0.1 dB and also a wide range of unwanted harmonics (3.1–10.6 GHz) has been achieved. 相似文献