基于广义改进型Hammerstein模型的宽带射频功率放大器建模

为了提高AH模型的建模精度,该文在AH模型的带记忆弱非线性模块中引入滞后包络项和超前包络项,用于仿真功率放大器的滞后包络效应和超前包络效应,从而构建出广义改进型Hammerstein模型(GAH)。通过实验比较了GAH模型和AH、记忆多项式、分数阶记忆多项式以及广义记忆多项式模型的建模精度和模型复杂度。实验结果显示GAH模型能在很低的计算复杂度下很好地表征功率放大器的记忆效应。     

电视发射机射频功率放大器的调试

电视发射机射频功率放大器的调试·调试与维护·河南鹤壁市广播电视局刘志学电视发射机末级电子管功率放大器是整机发射功率扩展的关键部位。它工作状态的好坏，直接影响到整机的性能和技术指标。由于该级功率放大器，一般均采用矩形谐振腔（米波）、同轴谐振腔（分米波）...     

关于提升射频功率放大器效率的探讨

当前,人们生活离不开手机通信、互联网等现代科学技术,现代社会也正日趋走向智能时代快速发展,而智能时代离不开无线通信技术,功率放大器作为无线通信系统中射频前端重要的核心模块之一,其对通信系统的整体性能有着至关重要的影响,因而得到了人们广泛的重视和研究。如何提升射频功率放大器的效率,一直是科研工作者关注研究的一门课题,搞清楚功率放大器的电路基础,提升放大器的线性度,了解功率放大器的相关技术等才是推进射频放大器的功率的关键所在。     

射频功率放大器

介绍了中波广播发射机中射频功率放大器的组成,工作原理和效率分析,以及其维护、维修的要点,并对比实际电路做刨析。     

射频功率放大器的非线性研究

本文提出了一种基于幂级数法(Power级数法)的射频功率放大器的非线性带通模型;并对典型限带信号通过射频功率放大器后的频谱密度进行了分析与计算,对功率放大器的设计及其失真研究具有指导意义.     

射频功率放大器的线性化技术

本文阐述了射频功率放大器非线性产生的原因，介绍了几种射频功放的线性化技术，以便于射频功放设计者参考。     

基于神经网络的功率放大器预失真建模

提出一种神经网络结合分离信号对功率放大器预失真建模的方法。将输入/输出信号的线性与非线性部分分开处理,利用神经网络良好的逼近能力,采用LM算法,拟合出功率放大器特性曲线,进而建立预失真模型,使非线性功率放大器的输入/输出曲线整体呈线性化。在保证输出幅度限制和输出功率最大化的前提下,与未作信号分离的神经网络建模方法、多项式建模方法以及Saleh函数模型方法相比较,发现信号分离神经网络建模方法能得到较小的归一化均方误差和误差矢量幅度。仿真结果表明,采用信号分离神经网络对功率放大器及其预失真建模,整体线性化误差较小、精度高、效果更佳。     

基于SiGe工艺的高增益射频功率放大器

基于0.13μm SiGe HBT工艺,设计应用于无线局域网(WLAN)802.11b/g频段范围内的高增益射频功率放大器.该功放工作在AB类,由三级放大电路级联构成,并带有温度补偿和线性化的偏置电路.仿真结果显示:功率增益高达30dB,1dB压缩点输出功率为24dBm,电路的S参数S11在1.5～4GHz大的频率范围内均小于-17dB,S21大于30dB,输出匹配S22小于-10dB,S12小于-90dB.最高效率可达42.7%,1dB压缩点效率为37%.     

The class BD high-efficiency RF power amplifier

Class B and class D operation of the same RF power amplifier circuit is not normally possible because of constraints imposed by the tuned output circuit and DC power input circuit. The use of square-wave drive in a current switching class D RF amplifier circuit allows the amplifier to move gradually from current source to current switch operation. This amplifier, called class BD, has a linear transfer characteristic (drive envelope to output envelope) and an efficiency 1.23 times that of a class B RF amplifier with the same peak output. The addition of a resistive AC current path to ground in the DC power input circuit of the class BD RF amplifier allows operation with sinewave driving waveforms. While this lowers the efficiency at the peak output, it can raise it at lower outputs, making possible a factor of 1.57 improvement in efficiency in the amplification of signals with large peak-to-average ratios. The class BD RF amplifier may therefore be used as a broad-band replacement for a Doherty-type amplifier.     

Junction-gate FET RF power amplifier

A junction-gate power field-effect transistor of recent design has been found to yield greater than 25 watts CW at 30 MHz in two modes of circuit configuration. In this investigation, favorable characteristics are explored for potential device utility as a high-reliability low-distortion RF power amplifier.     

CDMA射频线性功率放大器

该文对前馈线性校正射频功率放大器进行了分析,给出了分析结果。并用该结果指导设计了CDMAIS-95基站射频线性功率放大器,放大器增益47dB,连续波输出功率60W,在通频带内三阶交调改善了23dB。     

高效率E类射频功率放大器

研究了E类RF放大器的电路结构、工作原理、存在问题以及解决的方法--差分和交叉耦合反馈结构,最后给出了E类放大器的实例.由于具有低成本、高集成度、多功用等优点,MOS工艺在射频功率放大方面有很大的发展潜力.在本文中,用0.6 u m CMOS工艺实现了E类放大器的设计.     

Design of high-efficiency RF Class-D power amplifier

In this paper, the losses in a Class-D RF switching power amplifier and their frequency dependence are described. The losses analyzed are the switching, conduction, and gate drive losses. A 300 W, 13.56 MHz, Class-D circuit is designed in the traditional manner to illustrate the magnitude of the different types of loss. A circuit using the ZVS equations developed in this paper is designed. An experimental circuit is built using standard IRF540 devices in TO220 packages. That circuit does not meet its performance goals because of the package inductance. A new low inductance half-bridge package is introduced to solve this problem. Techniques for circuit layout and power measurements for RF applications are also presented in the experimental section. A low loss gate drive circuit is also presented using a Class-E circuit to provide the drive power. The experimental results confirm the accuracy of the design equations derived in this paper     

CMOS RF power amplifier with reconfigurable transformer

A CMOS RF power amplifier that can change the output transformer ratio is presented. The CMOS power amplifier is fully integrated in a 0.13 /spl mu/m process and has a power added efficiency (PAE) of 38% at 2.1 GHz and an output power of 30.7 dBm with 3.0 V supply voltage. The PAE at an output power of 16 dBm was increased by 40% by altering the transformer ratio.     

RF power amplifier linearization through amplitude and phasepredistortion

This paper presents a novel technique for power amplifier linearization in digital microwave radio systems. The proposed technique is based on the use of a predistortion circuit, whose AM/AM and AM/PM responses are separately implemented as polynomial approximations of the respective responses of the ideal linearizer. The proposed scheme is shown to attain superior performance in comparison with other well-known predistortion structures, such as those based on the cancellation of third or fifth order distortion, with no substantial aggravation in implementation complexity     

An inductive antenna mismatch recoverable RF power amplifier

An inductive antenna mismatch recovery method is presented. The proposed method uses series LC matching network to maintain a power amplifier (PA) performance under an inductive antenna mismatch condition. This method requires only the voltage amplitude information, which reduces the complexity in implementation. This paper also presents design considerations of integrated recovery system in a complementary metal-oxide semiconductor (CMOS) process. Simulation results show that the proposed CMOS PA maintains its output power as well as efficiency very close to the well-matched 50 Ω condition with inductively mismatched antenna impedance up to +j·70 which is corresponding to the voltage standing wave ratio of 2.5.     

移动终端射频功放的动态电源管理与控制

本文研究WCDMA移动终端射频功放供电效率问题.分析了射频功放特性和电池放电特性,给出了考虑射频输出功率分布的动态电源管理方案和控制算法,分析结果表明:与常规的电池直接供电方案相比较,按照移动终端在城市的发射功率分布模型,新方案射频功放所需的平均功率降低了3.5倍,可以大大延长手机通话和待机时间.     

A VSWR-protected silicon bipolar RF power amplifier with soft-slope power control

This paper presents the design and measured performance of a 1.8-GHz power amplifier featuring load mismatch protection and soft-slope power control. Load-mismatch-induced breakdown can be avoided by attenuating the RF power to the final stage during overvoltage conditions. This was accomplished by means of a feedback control system, which detects the peak voltage at the output collector node and clamps its value to a given threshold by varying the circuit gain. The issue of output power control has been addressed as well. To this end, a temperature-compensated bias network is proposed, which allows a moderate power control slope (dB/V) to be achieved by varying the circuit quiescent current according to an exponential law. The nonlinear power amplifier was fabricated using a low-cost silicon bipolar process with a 6.4-V breakdown voltage. It delivers a 33.5-dBm saturated output power with 46% maximum power-added efficiency and 36-dB gain at a nominal 3.5-V supply voltage. The device is able to tolerate a 10:1 load standing-wave ratio up to a 5.1-V supply voltage. Power control slope is lower than 80 dB/V between -15 dBm and the saturated output power level.