Piezotronic effect enhanced Schottky-contact ZnO micro/nanowire humidity sensors

A ZnO micro/nanowire has been utilized to fabricate Schottky-contacted humidity sensors based on a metal-semiconductor-metal （M-S-M） structure. By means of the piezotronic effect, the signal level, sensitivity and sensing resolution of the humidity sensor were significantly enhanced when applying an external strain. Since a higher Schottky barrier markedly reduces the signal level, while a lower Schottky barrier decreases the sensor sensitivity due to increased ohmic transport, a 0.22% compressive strain was found to optimize the performance of the humidity sensor, with the largest responsivity being 1,240%. The physical mechanism behind the observed mechanical-electrical behavior was carefully studied by using band structure diagrams. This work provides a promising way to significantly enhance the overall performance of a Schottky-contact structured micro/nanowire sensor.     

Ultraviolet photoconductance of a single hexagonal WO3 nanowire

The ultraviolet (UV) photoconductance properties of a single hexagonal WO₃ nanowire have been studied systematically. The conductance of WO₃ nanowires is very sensitive to ultraviolet B light and a field-effect transistor (FET) nanodevice incorporating a single WO₃ nanowire exhibits excellent sensitivity, reversibility, and wavelength selectivity. A high photoconductivity gain suggests that WO₃ nanowires can be used as the sensing element for UV photodetectors. Measurements under UV light in vacuum show that the adsorption and desorption of oxygen molecules on the surface of the WO₃ nanowire can significantly influence its photoelectrical properties. The WO₃ nanowires have potential applications in biological sensors, optoelectronic devices, optical memory, and other areas.      

A comparative study of the effect of gold seed particle preparation method on nanowire growth

Highly controlled particle-assisted growth of semiconductor nanowires has been performed for many years, and a number of novel nanowire-based devices have been demonstrated. Full control of the epitaxial growth is required to optimize the performance of devices, and gold seed particles are known to provide the most controlled growth. Successful nanowire growth from gold particles generated and deposited by various different methods has been reported, but no investigation has yet been performed to compare the effects of gold particle generation and deposition methods on nanowire growth. In this article we present a direct comparative study of the effect of the gold particle creation and deposition methods on nanowire growth characteristics and nanowire crystal structure, and investigate the limitations of the different generation and deposition methods used.      

Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output

We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 10⁶. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 μA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel array, the yield of functioning transistors is dramatically increased and deviceto-device variability is reduced compared to single devices. This new nanowirebased platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes (LEDs), while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.      

Cotunneling transport in ultra-narrow gold nanowire bundles

We investigate the charge transport in close-packed ultra-narrow （1.5 nm diameter） gold nanowires stabilized by oleylamine ligands. We give evidence of charging effects in the weakly coupled one-dimensional （1D） nanowires, monitored by the temperature and the bias voltage. At low temperature, in the Coulomb blockade regime, the current flow reveals an original cooperative multi-hopping process between 1D-segments of Au-NWs, minimising the charging energy cost. Above the Coulomb blockade threshold voltage and at high temperature, the charge transport evolves into a sequential tunneling regime between the nearest- nanowires. Our analysis shows that the effective length of the Au-NWs inside the bundle is similar to the 1D localisation length of the electronic wave function （of the order of 120 nm _＋ 20 nm）, but almost two orders of magnitude larger than the diameter of the nanowire. This result confirms the high structural quality of the Au-NW segments.     

Enhanced π-π interactions between a C60 fullerene and a buckle bend on a double-walled carbon nanotube

In situ low-voltage aberration corrected transmission electron microscopy (TEM) observations of the dynamic entrapment of a C₆₀ molecule in the saddle of a bent double-walled carbon nanotube is presented. The fullerene interaction is non-covalent, suggesting that enhanced π-π interactions (van der Waals forces) are responsible. Classical molecular dynamics calculations confirm that the increased interaction area associated with a buckle is sufficient to trap a fullerene. Moreover, they show hopping behavior in agreement with our experimental observations. Our findings further our understanding of carbon nanostructure interactions, which are important in the rapidly developing field of low-voltage aberration corrected TEM and nano-carbon device fabrication.      

Schottky barrier-based silicon nanowire pH sensor with live sensitivity control

We demonstrate a pH sensor based on ultrasensitive nanosize Schottky junctions formed within bottom-up grown dopant-flee arrays of assembled silicon nanowires. A new measurement concept relying on a continuous gate sweep is presented, which allows the straightforward determination of the point of maximum sensitivity of the device and allows sensing experiments to be performed in the optimum regime. Integration of devices into a portable fluidic system and an electrode isolation strategy affords a stable environment and enables long time robust FET sensing measurements in a liquid environment to be carried out. Investigations of the physical and chemical sensitivity of our devices at different pH values and a comparison with theoretical limits are also discussed. We believe that such a combination of nanofabrication and engineering advances makes this Schottky barrier-powered silicon nanowire lab-on-a-chip platform suitable for efficient biodetection and even for more complex biochemical analysis.     

Silver nanowires with semiconducting ligands for low-temperature transparent conductors

Metal nanowire networks represent a promising candidate for the rapid fabrication of transparent electrodes with high transmission and low sheet-resistance values at very low deposition temperatures. A commonly encountered challenge in the formation of conductive nanowire electrodes is establishing high-quality electronic contact between nanowires to facilitate long-range current transport through the network. A new system involving nanowire ligand removal and replacement with a semiconducting sol-gel tin oxide matrix has enabled the fabrication of high-performance transparent electrodes at dramatically reduced temperatures with minimal need for post-deposition treatment.

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Ladder-like metal oxide nanowires: Synthesis,electrical transport,and enhanced light absorption properties

Transparent metal oxide nanowires （NWs） have attracted intense research interest in recent years. We report here the synthesis of interesting ladder-like metal oxide NWs, including In2O3, SnO2, ZnO, and Ga2O3, via a facile chemical vapor deposition （CVD） method. Their structural features and growth mechanism are demonstrated in detail by using the ladder-like In2O3 NWs as an example. Single ladder-like NW-based field-effect transistors （FETs） and photodetectors （PDs） of SnO2 were fabricated in order to investigate their electrical transport and light absorption properties. Compared with straight NW-based FETs which operate in an enhancement mode （E-mode）, FETs build on ladder-like NWs operate in a depletion mode （D-mode）. The ladder-like NWs also give higher carrier concentrations than conventional single nanowires. Finite-difference time-domain （FDTD） simulations have been performed on the ladder-like NWs and the results reveal a great enhancement of light absorption with both transverse-electric （TE） and transverse-magnetic （TM） polarization modes, which is in good agreement with the experimental results.     

Growth of silicon nanowires in aqueous solution under atmospheric pressure

A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85℃ under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.     

High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices

Gated transport measurements are the backbone of electrical characterization of nanoscale electronic devices. Scanning gate microscopy （SGM） is one such gating technique that adds crucial spatial information, accessing the localized properties of semiconductor devices. Nanowires represent a central device concept due to the potential to combine very different materials. However, SGM on semiconductor nanowires has been limited to a resolution in the 50-100 nm range. Here, we present a study by SGM of newly developed III-V semiconductor nanowire InAs/GaSb heterojunction Esaki tunnel diode devices under ultra-high vacuum. Sub-5 nm resolution is demonstrated at room temperature via use of quartz resonator atomic force microscopy sensors, with the capability to resolve InAs nanowire facets, the InAs/GaSb tunnel diode transition and nanoscale defects on the device. We demonstrate that such measurements can rapidly give important insight into the device properties via use of a simplified physical model, without the requirement for extensive calculation of the electrostatics of the system. Interestingly, by precise spatial correlation of the device electrical transport properties and surface structure we show the position and existence of a very abrupt （〈10 nm） electrical transition across the InAs/GaSb junction despite the change in material composition occurring only over 30-50 nm. The direct and simultaneous link between nanostructure composition and electrical properties helps set important limits for the precision in structural control needed to achieve desired device performance.     

Reliability tests and improvements for Sc-contacted n-type carbon nanotube transistors

Scandium (Sc) contacted n-type carbon nanotube (CNT) field-effected transistors (FETs) with back and top-gate structure have been fabricated, and their stability in air were investigated. It was shown that oxygen and water molecules may affect both the nanotube channel and Sc/nanotube contacts, leading to deteriorated contact quality and device performance. These negative effects associated with the instability of n-type carbon nanotube FETs can be eliminated through passivating the CNT devices by a thin layer of atomic-layer-deposition grown Al₂O₃ insulator. After passivation, the n-type carbon nanotube FETs are shown to exhibit excellent atmosphere stability even after being tested and exposed to air for over 146 days, and then much smoother output characteristics and reduced gate voltage hysteresis from 1 to 0.1 V were demonstrated when compared with devices without passivation. Lasting power-on tests were also performed on the passivated CNT FETs under large gate stress and high drain current in air for at least 10 h, revealing null device degradation and sometimes even improved performance. These results promise that passivated CNT devices are reliable in air and may be used in practical applications.      

Repair and stabilization in confined nanoscale systems — inorganic nanowires within single-walled carbon nanotubes

Repair is ubiquitous in biological systems, but rare in the inorganic world. We show that inorganic nanoscale systems can however possess remarkable repair and reconfiguring capabilities when subjected to extreme confinement. Confined crystallization inside single-walled carbon nanotube (SWCNT) templates is known to produce the narrowest inorganic nanowires, but little is known about the potential for repair of such nanowires once crystallized, and what can drive it. Here inorganic nanowires encapsulated within SWCNTs were seen by high-resolution transmission electron microscopy to adjust to changes in their nanotube template through atomic rearrangement at room temperature. These observations highlight nanowire repair processes, supported by theoretical modeling, that are consistent with atomic migration at fractured, ionic ends of the nanowires encouraged by long-range force fields, as well as release-blocking mechanisms where nanowire atoms bind to nanotube walls to stabilize the ruptured nanotube and allow the nanowire to reform. Such principles can inform the design of nanoscale systems with enhanced resilience.      

Light-controlled synthesis of uniform platinum nanodendrites with markedly enhanced electrocatalytic activity

We report a fast in situ seeding approach based on zinc（II） porphyrin （ZnP） under white light irradiation, leading to uniform spherical platinum nanodendrites with tunable sizes. The platinum nanodendrites exhibit significantly improved electrocatalytic activities toward oxygen reduction reaction （ORR） and methanol oxidation reaction （MOR） compared with commercial platinum black.     

ZnO hierarchical aggregates: Solvothermal synthesis and application in dye-sensitized solar cells

ZnO hierarchical aggregates have been successfully synthesized by solvothermal methods through reaction of zinc acetate and potassium hydroxide in methanol solution. The shapes of the aggregates were controlled by varying the ratio of Zn²⁺ and OH^? ions in the reaction system, while the size can be tuned from 2 μm to 100 nm. Oriented attachment was found to be the main mechanism of the three-dimensional assembly of small ZnO nanocrystallites into large aggregates. The performance of these aggregates in dye-sensitized solar cells (DSCs) indicated that hierarchical structured photoelectrodes can increase energy conversion efficiency of DSCs effectively when the sizes of aggregates match the wavelengths of visible light.      

Coordinated buckling of thick multi-walled carbon nanotubes under uniaxial compression

Using a generalized quasi-continuum method, we characterize the post-buckling morphologies and energetics of thick multi-walled carbon nanotubes (MWCNTs) under uniaxial compression. Our simulations identify for the first time evolving post-buckling morphologies, ranging from asymmetric periodic rippling to a helical diamond pattern. We attribute the evolving morphologies to the coordinated buckling of the constituent shells. The post-buckling morphologies result in significantly reduced effective moduli that are strongly dependent on the aspect ratio. Our simulation results provide fundamental principles to guide the future design of high-performance, MWCNT-based nanodevices.      

<Emphasis Type="Italic">In-situ</Emphasis> probing of thermal desorption of vapor molecules on a nanowire via work function variance

Nanowire sensors based on variations of their electrical properties show great potential for real-time, in situ monitoring of molecular adsorption and desorption. Although the molecular adsorption-induced change in the electronic work function is very sensitive, it does not have any specificity. However, the temperature dependency of the adsorption-induced work function variation can provide limited selectivity based on the desorption temperature. In this study, we report the in situ probing of molecular desorption by monitoring the work function variations of a single Pt nanowire as a function of temperature. The work function of a clean Pt nanowire shows a significant variation due to vapor adsorption at room temperature. Increasing the temperature of the nanowire results in a variation of the work function due to molecular desorption. Experimentally measured differential work function as a function of temperature shows desorption peaks at 36 and 44 °C for methanol and ethanol molecules respectively. Adsorption-induced variation of the Pt nanowire work function was further confirmed using ultraviolet photoelectron spectroscopy before and after exposure to methanol vapor. These results show that the molecular adsorption/desorption-induced variation of the work function and its temperature dependency can be used for developing nanoscale electro-calorimetric sensors.

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Polymer nanowire vertical transistors

By utilizing poly（3-hexylthiophene） （P3HT） polymer nanowires with diameters of -15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V.     

A perspective on functionalizing colloidal quantum dots with DNA

This perspective provides an overview of the techniques that have been developed for the conjugation of DNA to colloidal quantum dots (QDs), or semiconductor nanocrystals. Methods described include: ligand exchange at the QD surface, covalent conjugation of DNA to the QD surface ligands, and one-step DNA functionalization on core QDs or during core/shell QD synthesis in aqueous solution, with an emphasis on the most recent progress in our lab. We will also discuss emerging trends in DNA-functionalized QDs for potential applications.