Bismuth ferrite bilayered thin films of different constituent layer thicknesses

Bilayered thin films consisting of (Bi_0.90La_0.10)(Fe_0.85Zn_0.15)O₃ and (Bi_0.90La_0.10)(Fe_0.90Zn_0.10)O₃ layers have been fabricated by radio frequency sputtering. Both multiferroic layers are well retained in these bilayers. Their leakage current, multiferroic properties, and fatigue behavior are largely dependent on the thicknesses of (Bi_0.90La_0.10)(Fe_0.85Zn_0.15)O₃. With an increase of the thickness in the (Bi_0.90La_0.10)(Fe_0.85Zn_0.15)O₃ layer, the leakage current density of bilayers is degraded due to different grain growth modes and an increase in oxygen vacancies, the dielectric constant (?_r) becomes larger due to the introduction of (Bi_0.90La_0.10)(Fe_0.85Zn_0.15)O₃ with a high ?_r value, and their magnetic properties are deteriorated with increasing the thickness ratios of (Bi_0.90La_0.10)(Fe_0.85Zn_0.15)O₃ with a weaker magnetization. All bilayers exhibit a good ferroelectric behavior regardless of varying thicknesses of the (Bi_0.90La_0.10)(Fe_0.85Zn_0.15)O₃ layer, while their coercive field decreases with increasing the thickness of the (Bi_0.90La_0.10)(Fe_0.85Zn_0.15)O₃ layer. An anomalous enhancement in switchable polarization is demonstrated by these bilayers, owing to the involvement of space charges accumulated at the interfaces between two constituent layers.     

A giant polarization value in bismuth ferrite thin films

An approach is used to improve the remanent polarization of BiFeO₃ thin films, where the BiFe_0.96Zn_0.04O₃ thin film with (1 1 1) orientation was grown on the SrRuO₃/SrTiO₃(1 1 1) substrate by rf sputtering. A higher dielectric constant and a lower dielectric loss are demonstrated for the BiFe_0.96Zn_0.04O₃ thin film as compared with those of pure BiFeO₃ thin film. The introduction of Zn deteriorates the magnetic properties of BFO thin films. A giant polarization value of 2P_r ∼ 268.5 μC/cm² is induced for the BiFe_0.96Zn_0.04O₃ thin film as confirmed by PUND, owing to the (1 1 1) orientation, the introduction of Zn, and a low leakage current density.     

Microstructure and magnetic properties of NiZn ferrite thin films prepared by sol-gel method

Ti^4＋ substitution for Fe^3＋ in Ni0.5Zn0.5Fe2O4 （NZF） ferrite thin films were realized by sol-gel method and annealing at 600℃for 30 min in the air. Crystal structure and lattice constant determination was performed by X-ray diffractometer （XRD）. Surface microstructure was observed by scanning electron microscope （SEM） and atomic force microscope （AFM）, and the magnetic properties were measured by vibrating sample magnetometer （VSM）. XRD analyses of the samples show that Ni0.5＋xZn0.5TixFe2-2xO4 （NZTF） films with x varing from 0 to 0.15 in steps of 0.05 are composed of single phase with spinel structure. And the lattice parameter, particle size and the diffraction intensity of the films increase with substitution of Ti as the result of the larger radius ions entering the lattice. SEM and AFM show homogeneous grain size of each sample, but there is a few differences in grain size with different Ti-substitution contents. As the nonmagnetic Ti^4＋ substitutes Fe^3＋, both the saturation magnetization and coercivity decrease.     

Effect of substrate temperature on microstructures and dielectric properties of compositionally graded BST thin films

Compositionally graded Ba1-xSrxTiO3 （BST） （x = 0-0.3） thin films were prepared on Pt/Ti/SiO2/Si substrate at different substrate temperatures ranging from 550 ℃ to 650 ℃ by radio-frequency （rf） magnetron sputtering. The effect of substrate temperature on the preferential orientation, microstructures and dielectric properties of compositionally graded BST thin films was investigated by X-ray diffraction, scanning electron microscopy and dielectric frequency spectra, respectively. As the temperature increases, the preferential orientation evolves in the order： randomly orientation→ （111） → highly oriented （111） （α（111）= 60.2%）. The surface roughness of the graded BST thin films varies with the substrate temperatures. No visible internal interface in the compositionally graded thin films can be observed in the cross-sectional SEM images. The graded BST thin films deposited at 650 ℃ possess the highest dielectric constant and dielectric loss, which are 408 and 0.013, respectively.     

Co和Cu薄膜电学特性和连续性特征的判据

采用离子束溅射沉积了不同厚度的Co膜和Cu膜,利用四电极法测量了薄膜的电阻率,从而得到了Co膜和Cu膜的电导率随薄膜厚度的变化关系。实验结果表明,Co膜和Cu膜的电学特性都具有明显的尺寸效应。比较了同时考虑表面散射和晶界散射的电导理论得到的电导率公式与实验结果,不同薄膜厚度电导率的理论结果与实验结果符合较好。提出了厚度作为金属薄膜生长从不连续膜进入连续膜的一个特征判据,并利用原子力显微镜(AFM)观测了膜厚在特征厚度附近的Co膜和Cu膜的表面形貌。     

Growth of HT-LiCoO2 thin films on Pt-metalized silicon substrates

Layered LiCoO2 (HT-LiCoO2) films were grown on Pt-metalized silicon (PMS) substrates and polished bulk nickel (PBN) substrates by pulsed laser deposition. The effects of substrate temperature, oxygen pressure, and substrate surface roughness on the microstructure of LiCoO2 films were investigated. It has been found that a higher substrate temperature and a higher oxygen pressure favor the formation of better crystallized and less lithium-deficient HT-LiCoO2 films. The HT-LiCoO2 film deposited on PBN substrates consists of large randomly orientated equiaxial grains, whereas on PMS substrate, it is made up of loosely packed highly [001] preferential orientated triangular shaped grains with the average grain size less than 100nm. Electrochemical measurements show that the highly [001] preferentially orientated nanostructured HT-LiCoO2 thin film grown on PMS substrate has good structural stability upon lithium insertion/extraction and can deliver an initial discharge capacity of approximately 45 μA·h·cm-2μm-1 with a cycling efficiency of above 99% at the charge/discharge rate of 0.5C.     

Study of microstructure and magnetic properties of electrodeposited nanocrystalline CoFeNiCu thin films

In this study the nanocrystalline CoFeNiCu thin films were electrodeposited from baths containing sodium citrate as a complexing agent and pH of around 5. Electrodeposition conditions were changed in order to achieve optimum soft magnetic properties which are required for new generation magnetic head core. SEM, EDS, XRD and VSM were used for characterization of the deposited films. The SEM micrographs of the deposited films exhibited no micro-voids and more uniform surface morphology compared with films electroplated from conventional baths (with low pH and no additives). According to X-ray diffraction patterns, the films electroplated at current densities lower than 4 mA/cm² showed FCC (Cu) phase structure, and other films exhibited BCC (Fe) and/or FCC (Co) phases. Calculating grain size of the films by using Scherrer equation showed that all the coatings were nanocrystalline and double phase films had lower average grain size in comparison with single phase films. The VSM results demonstrated that the coercivity of the nanocrystalline films dramatically reduced with decreasing grain size and followed D⁶ law. However, grain size had no effect on the saturation magnetization, whereas the chemical composition significantly affected saturation magnetization of the films. The results also indicated that in order to obtain films with low coercivity and high saturation magnetization, the nickel and copper contents of the deposits must not exceed 12 and 5 at.%, respectively.     

Preparation and properties of CdS thin films grown by ILGAR method

CdS thin films were deposited by the ion layer gas reaction (ILGAR) method. Structural, chemical, topographical development as well as optical and electrical properties of as-deposited and annealed thin films were investigated by XRD,SEM, XPS, AFM and UV-VIS. The results showed that the thin films are uniform, compact and good in adhesion to the substrates, and the growth of the films is 2.8 nm/cycle. The evolution of structure undergoes from the cubic structure to the hexagonal one with a preferred orientation along the (002) plane after annealing at 673 K. An amount of C, O and C1 impudries can be reduced by increasing the drying temperature or by annealing in N2 atmosphere. It was found that the band gap of the CdS films shifts to higher wavelength after annealing or increasing film thickness. The electrical resistivity decreases with increasing annealing temperature and film thickness.     

Growth of HT-LiCoO2 thin films on Pt-metalized silicon substrates

Layered LiCoO2 （HT-LiCoO2） films were grown on Pt-metalized silicon （PMS） substrates and polished bulk nickel （PBN） substrates by pulsed laser deposition. The effects of substrate temperature, oxygen pressure, and substrate surface roughness on the microstructure of LiCoO2 films were investigated. It has been found that a higher substrate temperature and a higher oxygen pressure favor the formation of better crystallized and less lithium-deficient HT-LiCoO2 films. The HT-LiCoO2 film deposited on PBN substrates consists of large randomly orientated equiaxial grains, whereas on PMS substrate, it is made up of loosely packed highly [001] preferential orientated triangular shaped grains with the average grain size less than 100 nm. Electrochemical measurements show that the highly [001] preferentially orientated nanostructured HT-LiCoO2 thin film grown on PMS substrate has good structural stability upon lithium insertion/extraction and can deliver an initial discharge capacity of approximately 45μA·h·cm^-2·μm^-1 with a cycling efficiency of above 99% at the charge/discharge rate of 0.5 C.     

Formation of crystalline Al-Ti-O thin films and their properties

The article reports on the effect of addition of Ti into Al₂O₃ films with Ti on their structure, mechanical properties and oxidation resistance. The main aim of the investigation was to prepare crystalline Al-Ti-O films at substrate temperatures T_s ≤ 500 °C. The films with three different compositions (41, 43 and 67 mol% Al₂O₃) were reactively sputtered from a composed Al/Ti target and their properties were characterized using X-ray diffraction (XRD), X-ray fluorescent spectroscopy (XRF), microhardness testing, and thermogravimetric analysis (TGA). It was found that (1) the addition of Ti stimulates crystallization of Al-Ti-O films at lower substrate temperatures, (2) Al-Ti-O films with a nanocrystalline cubic γ-Al₂O₃ structure, hardness of 25 GPa and zero oxidation in a flowing air up to ∼ 1050 °C can be prepared already at low substrate temperature of 200 °C, and (3) the crystallinity of Al-Ti-O films produced at a given temperature improves with the increasing amount of Ti. The last finding is in a good agreement with the binary phase diagram of the TiO₂-Al₂O₃ system.     

退火温度对ZnTe薄膜结构和性能的影响

采用脉冲激光沉积法(PLD)在玻璃衬底上通过室温溅射和原位退火制备了ZnTe薄膜。通过X射线衍射(XRD)、原子力显微镜(AFM)、紫外-可见分光光度计和荧光分光光度计等研究了退火温度对薄膜结构和性能的影响。结果表明:薄膜具有明显的<110>择优生长特征。随着退火温度的升高,薄膜结晶质量逐渐提高,晶粒长大,透过率增加;但过高的退火温度降低了晶体的结晶质量和透过率。当退火温度为280℃时,ZnTe薄膜具有最好的结晶质量,平均透过率达到90%左右。     

Effects of la concentration on the texturing and the electrical properties of sol-gel derived PLT thin films

Lanthanum doped lead titanate (PLT) thin films consisting of different La concentrations were fabricated on Pt/Ti/SiO₂/Si using sol-gel method. The films were dried at 440°C for 5 min and fired at 600°C using rapid thermal annealing (RTA) for 1min. The preferred orientation (texturing) and the morphology of the PLT film were changed with La concentration and a possible cause of the texturing has been discussed. The effects of La doping to the Lead titanate films on the dielectric constants, P-E hysteresis loop and pyroelectric coefficient were measured and discussed.     

Effect of annealing temperature on structure and electrochemical properties of LiCoO2 cathode thin films

LiCoO2 thin films, which can be used as a cathode material in microbatteries, were deposited using radio frequency (r.f.) magnetron sputtering system from a LiCoO2 target and in an O2+Ar atmosphere.The films were characterized by various methods such as XRD, SEM and AFM.The LiCoO2 films were annealed in air at 300, 500, 700 and 800 ℃ respectively.The effect of the annealing temperature on the structure, the surface morphology and the electrochemical properties of the films were investigated.The LiCoO2 thin film deposited at room temperature is amorphous and has smaller grain size.With increasing of annealing temperature, the crystallinity of the films is promoted.When the annealing temperature increases to 700 ℃, the films have a perfect crystalline LiCoO2 phase.The LiCoO2 thin film without annealing has no discharge plateau and small discharge capacity (about 27 μAh·cm-2μm).The discharge capacity increases with the increasing of annealing temperature and reaches 47 μAh·cm-2μm for the film annealed with 700 ℃, which also shows the typical discharge plateau of 3.9 V.The cycle performance of LiCoO2 thin films of as grown and annealed at different temperatures were studied.In the case of the film without thermal treatment, the capacity fading is much faster than that of the film annealed at different temperature, showing about 40% capacity loss only after 25 cycles.However, in the case of the film annealed at 700 ℃, the capacity reaches to steady state gradually and maintained constantly with cycling.After 25 times cycling, the discharge capacity of the film annealed at 700 ℃ decreases to about 36.9 μAh·cm-2·μm, only 0.8% capacity loss per cycle.     

Mg掺杂InxGa1-xN薄膜的磁控溅射法制备和表征

本文采用磁控溅射法用In2O3靶、Ga2O3靶、Mg靶在Si片上制备出InxGa1-xN薄膜和Mg掺杂的InxGa1-xN薄膜。薄膜中的In组分随着Mg的掺杂而减少,因为Mg的掺杂抑制了In-N键的形成,并增加了Ga进入薄膜的机会。通过EDS对Mg掺杂的InxGa1-xN薄膜的分析表明,有1.4%的Mg组分被成功地注入进InxGa1-xN薄膜。电学性能分析表明 In0.84Ga0.16N 和Mg掺杂的 In0.1Ga0.9N薄膜导电类型由n型转变为p型,而且Mg掺杂的 In0.1Ga0.9N薄膜的空穴浓度和电子迁移率分别为 2.65×1018 cm?3 和3.9 cm2/Vs。     

Characterization of chromium thin films by sputter deposition

In this study, a systematic investigation on the deposition of Cr-CrO_x bi-layer film was performed by magnetron DC sputtering. The X-ray photoelectron spectrometer (XPS) examining the bare Cr film showed that the peaks of Cr 2P_3/2 and Cr 2P_1/2 appeared in the Cr thin film associated with the presence of a 12 nm oxide layer. The transmission was reduced to zero as the Cr film exceeded 100 nm in thickness. The reflection saturated at a value of ≈55% when the thickness of the Cr film reached 30 nm. The optical density exceeded 3.50 with a Cr film thickness over 150 nm. In order to reduce the reflection of the film to a level of ≤4%, a Cr-CrO_x bi-layer thin film was prepared. Overall, a Cr-CrO_x bi-layer film with the Cr layer 130 nm and the CrO_x layer 40 nm in thickness reported a transmission of zero, a reflection of 3.82% and an optical density of 4.04, all meeting the requirements of anti-reflection black matrix (BM) for display applications.     

掺铝氧化锌薄膜的红外性能及机制

采用中频交流磁控溅射氧化锌铝(ZnO 2％Al2O3)陶瓷靶材的方法制备了掺铝氧化锌ZAO(ZnO：Al)薄膜．利用红外光谱仪测试了薄膜的红外反射性能,研究了薄膜厚度、基体温度和氩气压力对ZAO薄膜红外反射性能的影响规律,确定了制备具有高红外反射率的ZAO薄膜的工艺参数．     

Characterization of sputter—deposited TiPdNi thin films

TiPdNi thin films were prepared by magnetron sputtering onto unheated glass and silicon substrate.Atomic force microscope,energy-dispersive X-ray microsanalyzer,X-ray diffractometer,differential scanning calorimeter and optican microsope were used to characterize the films.It is found that the surface morphology of the films change during the sputtering process and a shift of about 3%Ti(mole fraction(content from the center to the edge of the substrate occurs.The freestanding as-deposited films undergo crystallization followed by three kinds of cooling conditions.For all these heattreated films,B2→B19→B19‘ two-stage phase transformation takes place.Many Ti2Ni and Ti2Pd type of precipitates are detected in the films.The constraint films on silicon substrate are crystallized at high temperature.After crystallization,the films show a two-way shape memory effect.     

纳米薄膜X射线吸收光谱的鉴定

采用X射线吸收光谱研究了热丝化学气相沉积(CVD)合成的纳米金刚石薄膜和脉冲激光沉积的纳米SiC薄膜.结果表明:纳米金刚石薄膜的碳K边X射线吸收精细结构光谱显示的激发峰相当于微米金刚石薄膜的蓝移,是量子效应的显著特征,证明制备的是纳米金刚石薄膜,与高分辨透射电镜的结果完全吻合;纳米SiC薄膜的硅K边X射线吸收精细结构光谱和扩展X射线吸收精细结构光谱也显示了纳米薄膜短程有序的结构特征,表明获得的是纳米SiC薄膜.     

Growth of bismuth telluride thin film on Pt by electrochemical atomic layer epitaxy

An automated thin-layer flow cell electrodeposition system was developed for growing Bi2Te3 thin film by ECALE. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. In the first attempt,this reductive Te underpotential deposition (UPD)/reductive Bi UPD cycle was performed to 100 layers. A better linearity of the stripping charge with the number of cycles has been shown and confirmed a layer-by-layer growth mode, which is consistent with an epitaxial growth. The 4 : 3 stoichiometric ratio of Bi to Te suggests that the incomplete charge transfer in HTeO reduction excludes the possibility of Bi2Te3 formation. X-ray photoelectron spectroscopy (XPS) analysis also reveals that the incomplete charge transfer in HTeO2^ occurs in Te direct deposition. The effective way of depositing Bi2Te3 on Pt consists in oxidative Te UPD and reductive Bi UPD. The thin film deposited by this procedure was characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and X-ray photoelectron spectroscopy(XPS). A polycrystalline characteristic was confirmed by XRD. The 2 : 3 stoichiometric ratio was confirmed by XPS. The SEM image indicates that the deposit looks like a series of buttons about 0.3 - 0.4/~m in diameter, which is corresponding with calculated thickness of the epitaxial film. This suggests that the particle growth appears to be linear with the number of cycles, as it is consistent with a layer by layer growth mode.     

Preparation and properties of tungsten-doped indium oxide thin films

Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical and electrical properties of IWO thin films were investigated. The thickness and surface morphology of the films are both closely dependent on the sputtering power and the substrate temperature. The transparency of the films decreases with the increase of the sputtering power but is not seriously influenced by substrate temperature. All the IWO thin film samples have high transmittance in near-infrared spectral range. With either the sputtering power or the growth temperature increases, the resistivity of the film decreases at the beginning and increases after the optimum parameters. The as-deposited IWO films with minimum resistivity of 6. 4× 10-4 Ω·cm were obtained at a growth temperature of 225 ℃ and sputtering power of 40 W, with carrier mobility of 33. 0 cm2· V-1·s-1 and carrier concentration of 2. 8× 1020 cm-3 and the average transmittance of about 81％ in near-infrared region and about 87％ in visible region.