Fabrication and properties of p-type K doped Zn1−xMgxO thin film

A series of K doped Zn_1−xMg_xO thin films have been prepared by pulsed laser deposition (PLD). Hall-effect measurements indicate that the films exhibit stable p-type behavior with duration of at least six months. The band gap of the K doped Zn_1−xMg_xO films undergoes a blueshift due to the Mg incorporation. However, photoluminescence (PL) results reveal that the crystallinity decreased with the increasing of Mg content. The fabricated K doped p-type Zn_0.95Mg_0.05O thin film exhibits good electrical properties, with resistivity of 15.21 Ω cm and hole concentration of 5.54 × 10¹⁸ cm⁻³. Furthermore, a simple ZnO-based p-n heterojunction was prepared by deposition of a K-doped p-type Zn_0.95Mg_0.05O layer on Ga-doped n-type ZnO thin film with low resistivity. The p-n diode heterostructure exhibits typical rectification behavior of p-n junctions.     

Transparent p-type CuxS thin films

The effect of different mild post-annealing treatments in air, at 270 °C, for 4-6 min, on the optical, electrical, structural and chemical properties of copper sulphide (Cu_xS) thin films deposited at room temperature are investigated. Cu_xS films, 70 nm thick, are deposited on glass substrates by vacuum thermal evaporation from a Cu₂S:S (50:50 wt.%) sulphur rich powder mixture. The as-deposited highly conductive crystalline CuS (covellite) films show high carrier concentration (∼10²² cm⁻³), low electrical resistivity (∼10⁻⁴ Ω cm) and inconclusive p-type conduction. After the mild post-annealing, these films display increasing values of resistivity (∼10⁻³ to ∼10⁻² Ω cm) with annealing time and exhibit conclusive p-type conduction. An increase of copper content in Cu_xS phases towards the semiconductive Cu₂S (chalcocite) compound with annealing time is reported, due to re-evaporation of sulphur from the films. However, the latter stoichiometry was not obtained, which indicates the presence of vacancies in the Cu lattice. In the most resistive films a Cu₂O phase is also observed, diminishing the amount of available copper to combine with sulphur, and therefore the highest values of optical transmittance are reached (65%). The appearance on the surface of amorphous sulphates with annealing time increase is also detected as a consequence of sulphur oxidation and replacement of sulphur with oxygen. All annealed films are copper deficient in regards to the stoichiometric Cu₂S and exhibit stable p-type conductivity.     

Structural investigation of thin films of Ti1−xAlxN ternary nitrides using Ti K-edge X-ray absorption fine structure

Thin films of Ti_1−xAl_xN nitrides were prepared over a large range of composition (0 ≤ x < 1) on Si substrates using nitrogen reactive magnetron sputtering from composite metallic targets. Ti K-edge X-ray Absorption Spectroscopy experiments were carried for a better understanding of the local structure. The evolution of the intensity of Ti K-edge pre-edge peak gives evidence of the incorporation of Ti in hexagonal lattice of AlN for Al-rich films and in cubic lattice of TiN for Ti-rich films. An attempt to determine their atomic structure by combining X-ray diffraction and Ti K-edge Extended X-ray Absorption Fine Structure is presented. The evolution of the nearest neighbour and next-nearest neighbour distances depending on the composition is presented and discussed together the cubic and hexagonal lattice parameters. A possible contribution of amorphous nitrides is suggested.     

CuIn1−xAlxS2 thin films prepared by sulfurization of metallic precursors

CuIn_1−xAl_xS₂ thin films (x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu-In-Al precursors. All samples were sulfurized in a graphite container for 90 min at 650 °C in a 150 kPa Ar + S atmosphere. Final films were studied via X-ray diffraction (XRD), scanning electron microscopy (SEM) and micro-Raman spectroscopy. It was found that all samples were polycrystalline in nature and their lattice parameters varied slightly nonlinearly from {a = 5.49 Å, c = 11.02 Å} for CuInS₂ to {a = 5.30 Å, c = 10.36 Å} for CuAlS₂. No unwanted phases such as Cu_2−xS or others were observed. Raman were recorded at a room temperature and the most intensive and dominant A₁ phonon frequency varied nonlinearly from 294 cm⁻¹ (CuInS₂) to 314 cm⁻¹ (CuAlS₂).     

Structural, elastic and electronic properties of Mg(Cu1−xZnx)2 alloys calculated by first-principles

The structural, elastic and electronic properties of Mg(Cu_1−xZn_x)₂ alloys (x = 0, 0.25, 0.5,and 0.75) were investigated by means of first-principle calculations within the framework of density functional theory (DFT). The calculation results demonstrated that the partial substitution of Cu with Zn in MgCu₂ leaded to an increase of lattice constants, and the optimized structural parameters were in very good agreement with the available experimental values. From energetic point of view, it was found that with increase of Zn content the structural stability of Mg(Cu_1−xZn_x)₂ alloys decreased apparently. The single-crystal elastic constants were obtained by computing total energy as a function of strain, and then the bulk modulus B, shear modulus G, Young's modulus Y and Poisson's ratio ν of polycrystalline aggregates were derived. The calculated results showed that among the Mg(Cu_1−xZn_x)₂ alloys, MgCuZn exhibited the largest stiffness, while Mg₂Cu₃Zn showed the best ductility. Finally, the electronic density of states (DOSs) and charge density distribution were further studied and discussed.     

Bismuth-containing semiconductors: Linear and nonlinear optical susceptibilities of GaAs1−xBix alloys

Using all electron full potential - linearized augmented plane wave (FP-LAPW) method the linear and nonlinear optical susceptibilities of cubic GaAs_1−xBi_x alloys with x varying between 0.25 and 0.75 with increment of 0.25 are investigated. We have applied the generalized gradient approximation (GGA) for the exchange and correlation potential. In addition the Engel-Vosko generalized gradient approximation (EVGGA) was used. The reflectivity, refractivity, absorption coefficient and the loss function of these ternary alloys were investigated. The absorption coefficient shows that GaAs_0.25Bi_0.75 possess the highest coefficient among the investigated alloys which supports our previous observation that the band gap decreases substantially with increasing Bi content and the materials with very small energy band gap possess the highest absorption coefficient. The investigation of the linear and nonlinear optical susceptibilities of GaAs_1−xBi_x shows a strong band gap reduction as commonly found experimentally.     

Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Ternary single-phase Bi_2−xSb_xSe₃ alloy thin films were synthesized onto Au(1 1 1) substrates from an aqueous solution containing Bi(NO₃)₃, SbCl₃, and SeO₂ at room temperature for the first time via the electrodeposition technique. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the thin films with different stoichiometry can be obtained by controlling the electrolyte composition. The as-deposited films were crystallized in the preferential orientation along the (0 1 5) plane. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of spherical particles on the film layer. The particle size and shape of Bi_2−xSb_xSe₃ films could be changed by tuning the electrolyte composition. The optical absorption spectra suggest that the band gap of this alloy varied from 0.24 to 0.38 eV with increasing Sb content from x = 0 to x = 0.2.     

Electrical properties of binder-free thick film BaYxBi1−xO3 NTC thermistors

The microstructure and electrical properties of BaY_xBi_1−xO₃ thick film negative temperature coefficient thermistors, fabricated by screen printing, were investigated. The sintered thick films were the single-phase solid solutions of the BaY_xBi_1−xO₃ compounds with a monoclinic structure. The added Y₂O₃ led to a significant decrease in the grain size of the thermistors. The resistivity and coefficient of temperature sensitivity for the BaY_xBi_1−xO₃ (0 ≤ x ≤ 0.15) thick film NTC thermistors decreased first with increasing x in the range of x < 0.04 and then increased with further increase in x.     

Preparation and characterization of La1−xKxFeO3 (x = 0-1) by self-propagating high-temperature synthesis for use as soot combustion catalyst

This paper proposes La_1−xK_xFeO₃ prepared by self-propagating high-temperature synthesis (SHS) as an alternative to platinum catalysts for promoting diesel soot combustion. The catalytic property of eleven products SHSed with different substitution ratios of potassium (x = 0-1) was experimentally evaluated using a thermobalance. In the mass loss curves of the product, T₅₀ was defined as the temperature at which the weight of the reference soot decreases to half its initial weight. The BET specific surface area of SHSed La_1−xK_xFeO₃ depended on x strongly. All the products showed good oxidation catalytic activity. Despite having the smallest surface area (0.11 m²/g) among the obtained products, La_0.9K_0.1FeO₃ (x = 0.1) was found to be the best catalyst with the lowest T₅₀ (442 °C). T₅₀ of La_1−xK_xFeO₃ decreased with increasing x for x > 0.2. The products with x = 0.6 and 0.8 were the second-best catalysts in terms of their T₅₀. Moreover, average apparent activation energy of La_0.9K_0.1FeO₃ (x = 0.1) calculated by Friedman method using TG was as much as 61 kJ/mol lower than that of Pt/Al₂O₃ catalyst. In conclusion, potassium-substituted SHSed La_1−xK_xFeO₃ can be used as an alternative to Pt/Al₂O₃ for soot combustion.     

First principles study of structural, electronic and magnetic properties of Mg1−xMnxTe alloys

Density functional FP-LAPW + lo calculations have been performed to study the structural, electronic and magnetic properties of Mg_1−xMn_xTe for compositional parameter x = 0.25, 0.50, 0.75 and 1. Our calculations reveal the occurrence of ferromagnetism in these compounds in which the transition-metal atom is ordered in a periodical way thereby interacting directly with the host atoms. Results extracted from electronic band structure and density of states (DOS) of these alloys show the existence of direct energy band gap for both majority- and minority-spin cases, while the total energy calculations confirm the stability of ferromagnetic state as compared to anti-ferromagnetic state. The total magnetic moment for Mg_1−xMn_xTe for each composition is found to be approximately 5 μ_B, which indicates that the addition of Mn content does not affect the hole carrier concentration of the perfect MgTe compound. Moreover, the s-d exchange constant (N₀α) and p-d exchange constant (N₀β) are also calculated which are in accordance with a typical magneto-optical experiment. The estimated spin-exchange splitting energies originated by Mn 3d states energies, i.e. Δ_X(s-d) and Δ_X(p-d), show that the effective potential for minority-spin is more attractive than that of the majority-spin. Also, the p-d hybridization is found to cause the reduction of local magnetic moment of Mn and produce small local magnetic moments on the nonmagnetic Mg and Te sites.     

Studies on the power factor of (Ba,Sr)Co2+xRu4−xO11 compounds

We have prepared polycrystalline single-phase ACo_2+xRu_4−xO₁₁ (A = Sr, Ba; 0 ≤ x ≤ 0.5) using the ceramic method and we have studied their structure, electrical resistivity and Seebeck coefficient, in order to estimate their power factor (P.F.). These layered compounds show values of electrical resistivity of the order of 10⁻⁵ Ωm and their Seebeck coefficients are positive and range from 1 μV K⁻¹ (T = 100 K) to 20 μV K⁻¹ (T = 450 K). The maximum power factor at room temperature is displayed by BaCo₂Ru₄O₁₁ (P.F.: 0.20 μW K⁻² cm⁻¹), value that is comparable to that shown by compounds such as SrRuO₃ and Sr₆Co₅O₁₅.     

Resistivity, thermopower, and thermal conductivity of nickel doped compounds Cr1−xNixSb2 at low temperatures

Substitutional compounds Cr_1−xNi_xSb₂ (0 ≤ x ≤ 0.1) were synthesized, and the effect of Ni substitution on transport and thermoelectric properties of Cr_1−xNi_xSb₂ were investigated at the temperatures from 7 to 310 K. The results indicated that the magnitudes of the resistivity and thermopower of Cr_1−xNi_xSb₂ decreased greatly with increasing Ni content at low temperatures, owing to an increase in electron concentration caused by Ni substitution for Cr. Experiments also showed that the low-temperature lattice thermal conductivity of Cr_1−xNi_xSb₂ decreased substantially with increasing Ni content due to an enhancement of phonon scattering by the increased number of Ni atoms. As a result, the figure of merit, ZT, of lightly doped Cr_0.99Ni_0.01Sb₂ was improved at T > ∼230 K. Specifically, the ZT of Cr_0.99Ni_0.01Sb₂ at 310 K was approximately ∼29% larger than that of CrSb₂, indicating that thermoelectric properties of CrSb₂ can be improved by an appropriate substitution of Ni for Cr.     

Electrochemical behaviors of TiO2−x films synthesized by plasma-based ion implantation and deposition in fibrinogen containing PBS solution

TiO_2−x films were synthesized on carbon by plasma-based ion implantation and deposition (PBII-D). Electrochemical behaviors of the prepared films were investigated in phosphate buffer solution (PBS) and fibrinogen containing PBS solution (PBS(Fn)), to probe charge transfer phenomena between TiO_2−x film and fibrinogen. Electrochemical impedance spectroscopy (EIS) as well as simulated values of equivalent circuit units including reaction resistance and electric double layer has been obtained, indicating different charge transfer rate occurred across the interfaces. The shape of Mott-Schottky spectroscopy around the rest-open potential indicates that TiO_2−x films are typical n-type semiconductor. Donor density results calculated by Mott-Schottky theory show that TiO_2−x films exhibit higher donor density in PBS(Fn) than in PBS, indicating charge transfer from fibrinogen to TiO_2−x films, and the space charge layers bend lower.     

Relationships between Zr substitution for Ti and microwave dielectric properties in Mg(ZrxTi1−x)O3 ceramics

The influence of Zr substitution for Ti on the microwave dielectric properties and microstructures of the Mg(Zr_xTi_1−x)O₃(MZ_xT) (0.01 ≤ x ≤ 0.3) ceramics was investigated. The quality factors of Mg(Zr_xTi_1−x)O₃ ceramics with x = 0.01-0.05 were improved because the solid solution of a small amount of Zr⁴⁺ substitution in the B-site could increase density and grain size. An excess of Zr⁴⁺ resulted in the formation of a great deal of secondary phase that declined the microwave dielectric properties of MZ_xT ceramics. The temperature coefficient of resonant frequency (τ_f) of Mg(Zr_xTi_1−x)O₃ ceramics slightly increased with increasing Zr content, and the variation in τ_f was attributed to the formation of secondary phases.     

Thermoelectric properties of Bi2SexTe3−x prepared by Bridgman method

Bi₂Se_xTe_3−x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ, was found to decrease with increasing Se content. The highest σ of 1.6 × 10⁵ S m⁻¹ at room temperature was reached at x = 0.12 with a growth rate of 0.8 mm h⁻¹. The Seebeck coefficient, S, was less dependent on Se content, all with positive values showing p-type characteristics, and the highest S was measured to be 240 μV K⁻¹ at x = 0.24. The lowest thermal conductivity, κ, was 0.7 W m⁻¹ K⁻¹ at x = 0.36. The electronic part of κ, κ_el, showed a decrease with increasing Se content, which implies that the hole concentration as the main carriers was reduced by the addition of Se. The highest dimensionless figure of merit, ZT, at room temperature was 1.2 at x = 0.36, which is attributed to the combination of a rather high electrical conductivity and Seebeck coefficient and low thermal conductivity.     

Characterization and blood compatibility of TiCxN1 − x hard coating prepared by plasma electrolytic carbonitriding

A novel technique to form Ti(C, N) on titanium, named as plasma electrolytic carbonitriding (PEC/N) on cathode was successful used to prepare TiC_xN_1 − x coating. The structure, composition and morphology of the coating were characterized by XRD, XPS and SEM, respectively. The results indicated that TiC_0.3N_0.7 as a new species appears on the surface of the titanium plate, and the thickness of the coating with porous surface morphology increases with the treated time. The blood compatibility of the TiC_0.3N_0.7 coating was evaluated by haemolysis ratios, dynamic blood clotting test, plasma recalcification time and platelet adhesion. The results indicated that the blood compatibility of the plasma-treated titanium with TiC_xN_1 − x coating is significantly improved as compared to the original titanium. Additionally, the results derived from measurements of hardness and corrosion indicated that the coating has excellent mechanical and corrosion-resistant properties.     

Effect of non-magnetic doping on multi-step magnetization behavior of Dy50−xAlxAg50

The electrical transport and magnetization measurements have been carried out on Al-doped polycrystalline intermetallic compounds Dy_50−xAl_xAg₅₀ (x = 0, 0.3, 0.6, 1.2, 1.8) in a pulsed high magnetic field, in which multi-step magnetization is observed. Partial substitute of non-magnetic Al³⁺ for Dy³⁺ ions in the compounds increases the critical magnetic fields and the relative area of the magnetic hysteresis loop, which result from the pinning effect, lattice distortion, the change of coupling strength and dilution effect related to the Al³⁺ doping.The experimental results indicate that non-magnetic Al³⁺ ions and induced amorphous phase can pin the rotation and/or growth of magnetic domains, thus, the critical magnetic field can be enhanced by doping non-magnetic ions in the magnetic materials, especially in the permanent magnet materials.     

Magnetomechanical properties of epoxy-bonded Sm1−xNdxFe1.55 (0 ≤ x ≤ 0.56) pseudo-1-3 magnetostrictive particulate composites

Pseudo-1-3 magnetostrictive particulate composites consisting of light rare earth (Sm and Nd)-based magnetostrictive Sm_1−xNd_xFe_1.55 particles with the Nd content x of 0-0.56 and randomly distributed sizes of 10-180 μm embedded and aligned in a passive epoxy matrix are fabricated using the particulate volume fraction of 0.5. The quasistatic magnetomechanical properties of the composites are investigated and the results are compared with their monolithic alloys for various x. The composites exhibit similar qualitative trends in properties with the alloys for all x. The Sm_0.92Nd_0.08Fe_1.55 composite shows a large unsaturated magnetostriction λ of −530 ppm at 500 kA/m and a high piezomagnetic coefficient d₃₃ of −2.0 nm/A at 100 kA/m as a result of the magnetocrystalline anisotropy compensation between Sm³⁺ and Nd³⁺ ions in the Sm_0.92Nd_0.08Fe_1.55 alloy.     

Thermoelectric properties of Cu1−xPtxFeO2 (0.0 ≤ x ≤ 0.05) delafossite-type transition oxide

The samples of Cu_1−xPt_xFeO₂ (0 ≤ x ≤ 0.05) delafossite were synthesized by solid state reaction method for studying thermoelectric properties. The properties of Seebeck coefficient, electrical conductivity and thermal conductivity were measured in the high temperature ranging from 300 to 960 K. The results of Seebeck coefficient, electrical conductivity and power factor were increased with increasing Pt substitution and temperature. The thermal conductivity was decreased from 5.8 to 3.5 W/mK with increasing the temperature from 300 to 960 K. An important results, the highest value of power factor and ZT is 2.0 × 10⁻⁴ W/mK² and 0.05, respectively, for x = 0.05 at 960 K.     

Combustion synthesis of Ti3Si1−xAlxC2 solid solutions from TiC-, SiC-, and Al4C3-containing powder compacts

Preparation of the Ti₃Si_1−xAl_xC₂ solid solution with x = 0.2-0.8 was investigated by self-propagating high-temperature synthesis (SHS) using TiC-, SiC-, and Al₄C₃-containing powder compacts. Due to the variation of reaction exothermicity with sample stoichiometry, the combustion temperature and reaction front velocity decreased with increasing Al content of Ti₃Si_1−xAl_xC₂ for the TiC- and Al₄C₃-added samples, but increased for the samples with SiC. In contrast to the formation of Ti₃(Si,Al)C₂ as the dominant phase for the TiC- and SiC-added samples, TiC was identified as the major constituent in the final products of samples adopting Al₄C₃. In addition, the evolution of Ti₃(Si,Al)C₂ was improved by increasing the Al content of the TiC- and SiC-added powder compacts, but deteriorated considerably upon the increase of Al₄C₃ in the Al₄C₃-containing sample.