现代微电子行业的新型湿法清洗工艺

随着半导体技术的不断发展,集成电路的线宽在不断减小,对硅抛光片表面质量的要求也越来越高,为使芯片上的器件功能正常．避免硅片制造中的沾污是绝对必要的。传统的RCA清洗方法已不能满足其需求。因此,必须发展新的清洗方法。本文对传统的RCA清洗方法进行了简单的介绍,在此基础上,介绍新发展的HF／O3清洗法,从而对450mm硅片清洗方法的未来发展方向进行了简单论述。     

硅片沾污检测及清洗技术研究进展

主要阐述了硅片表面沾污测试技术中的一些重要研究进展,同时介绍了几种常见的硅片清洗方法,并对各方法的优点及适用性进行介绍。     

半导体硅片清洗设备研究进展

阐述了半导体硅片清洗的一些重要设备。主要包括湿法化学清洗、兆声波清洗以及机械刷洗设备等常用的设备及配置,同时也介绍了近几年逐渐获得应用的清洗设备方面的技术创新。     

浅析数据清洗

本文主要对数据清洗问题进行综述。给出数据清洗的定义和对象,简单介绍数据清洗的基本原理和数据清洗的过程,针对不同清洗对象的数据清理方法,清洗后数据的评价要求,并对今后数据清洗的研究方向和应用进行展望。     

高楼壁面清洗机器人及相关技术的研究

综述了近年来国内外高楼壁面清洗机器人的研究发展概况,并进行了技术难点分析。重点介绍了一种结构简单的单吸盘清洗爬壁机器人,据此开发出的双轮式及双履带式爬壁机器人可用于对瓷砖和玻璃壁面进行清洗。     

硅片处理预对准系统的研究

介绍了所研制的12 in硅片预对准系统．首先,根据硅片预对准系统的任务和流程设计了系统的结构．其次,设计了预对准检测算法,采用最小二乘圆法对硅片圆心进行定位;提出了检测硅片缺口的边缘变化率法和计算缺口基准点的曲线拟合法．对预对准系统进行了误差分析．最后,采用光学式预对准方法,对12 in硅片进行了预对准实验研究．实验结果表明硅片缺口的重复定位精度小于48 μm,预对准时间为23 s,满足设计要求．     

三维人脸识别研究

对人脸识别进行了简单的描述,然后对人脸识别的传统及新近技术进行技术与应用的介绍。首先介绍人脸识别的概念及其发展历史,随后对人脸识别技术方法发展过程中一些传统方法进行阐述,继而对新近发展的新技术进行了探讨;最后介绍人脸识别技术的应用现状。     

硅片传输机器人的发展及研究现状

本文综述了硅片传输机器人的发展历史,探讨了硅片传输机器人的典型结构,分析了硅片传输机器人的研究现状,并介绍了硅片传输机器人的典型产品.     

微创手术式硅微机械加工（MISSM）技术

介绍了一种新颖的微创手术式硅微机械加工(MISSM)技术,该技术充分利用(111)硅片的晶向分布和各向异性湿法腐蚀的特性。通过在单晶硅片表面制作一系列微型释放窗口来定义结构的轮廓及尺寸,实现在单晶硅片内部选择性可自停止腐蚀技术,制作出不同结构尺寸的腔体。同时,结合不同器件结构设计的需求,缝合微型释放窗口并进行后续工艺制作及最终可动结构释放。该技术采用微创手术式单硅片单面体硅工艺替代传统的表面微机械工艺,制作工艺简单,既具有单硅片单面加工的优势又便于与IC工艺兼容。文章详细讲述了微创手术式三维微机械结构的成型机理和工艺流程,并针对其关键技术进行了系统的分析,取得了令人满意的结果。     

高层建筑清洗机器人控制软件设计

本文对高层建筑玻璃幕墙清洗机器人进行了简单介绍，并对控制软件结构特点进行了讨论，以此为基础 在文章的最后对软件结构中的关键技术进行了详细的说明。     

Diagnostic techniques for the dynamics of a thin liquid film under forced flow and evaporating conditions

Motivated by quantification of micro-hydrodynamics of a thin liquid film which is present in industrial processes, such as spray cooling, heating (e.g., boiling with the macrolayer and the microlayer), coating, cleaning, and lubrication, we use micro-conductive probes and confocal optical sensors to measure the thickness and dynamic characteristics of a liquid film on a silicon wafer surface with or without heating. The simultaneous measurement on the same liquid film shows that the two techniques are in a good agreement with respect to accuracy, but the optical sensors have a much higher acquisition rate up to 30 kHz which is more suitable for rapid process. The optical sensors are therefore used to measure the instantaneous film thickness in an isothermal flow over a silicon wafer, obtaining the film thickness profile and the interfacial wave. The dynamic thickness of an evaporating film on a horizontal silicon wafer surface is also recorded by the optical sensor for the first time. The results indicate that the critical thickness initiating film instability on the silicon wafer is around 84 μm at heat flux of ~56 kW/m². In general, the tests performed show that the confocal optical sensor is capable of measuring liquid film dynamics at various conditions, while the micro-conductive probe can be used to calibrate the optical sensor by simultaneous measurement of a film under quasi-steady state. The micro-experimental methods provide the solid platform for further investigation of the liquid film dynamics affected by physicochemical properties of the liquid and surfaces as well as thermal-hydraulic conditions.     

IgG分子在单晶硅片表面导向性固定的XPS和EIA研究

本文报道了利用ＩｇＧ分子中绞链区的寡糖链作为结合位点在氨基化的单晶硅片表面导向性固定抗体分子。我们通过改变硅烷化条件并用自然还原的方法使ＩｇＧ分子共价结合在单晶硅片表面,ＸＰＳ和ＥＩＡ表征结果表明这种导向性固定生物分子的途径能有效地固定ＩｇＧ分子并维持其结合抗原的能力。     

腔室清洗的单臂组合设备初始暂态调度

为了提升腔室洁净度,晶圆厂需对组合设备腔室进行清洗操作,从而提高晶圆的加工质量.考虑腔室清洗时间和晶圆驻留时间的约束条件下,本文研究了单臂组合设备的初始暂态调度问题.首先,提出了机械手的初始暂态活动规则,并对机械手活动序列进行描述,实现了系统的初始暂态可调度性;其次,对机械手在初始暂态和稳态的活动时间进行了建模;然后,根据系统的时间特性,建立了初始暂态调度的线性规划模型;最后,通过实例验证了该方法的有效性.与已有的虚拟晶圆方法相比,该调度方法能有效减少初始暂态的完工时间,提高了组合设备的晶圆生产效率.     

Mechanical and electrical bonding between silicon wafer and glass wafer with etched channels containing metal tracks

In this paper a novel process to bond and, at the same time, to electrically connect a silicon wafer to a glass wafer is presented. It consists of a low temperature anodic bonding process between silicon and glass by using a glass wafer with etched channels in order to contain metal tracks. The glass-to-silicon anodic bonding process at low temperatures (not exceeding 300°C) assures a strong mechanical link (Berthold et al. in Transducers 1999, June:7–10, 1999). The electrical contacts between the metal pads on the backside of a silicon wafer and the metal pads on the glass wafer are achieved by sintering and diffusion of metals due to a kind of thermo compression bonding. This bonding method permits a high vertical control due to a well-controlled etching of the cavity depth and to the thickness precision of both metallization (pads on silicon wafers and metal tracks on glass wafer). This IC-processing compatible approach opens up the way to a new electrical connection concept keeping, at the same time, a strong mechanical bond between glass and silicon wafers for an easier fabrication of a more complex micro-system.     

基于BOE硅腐蚀现象的硅纳米线制作

介绍一种硅纳米线制作方法.在SOI顶层硅上制作硅纳米梁,通过离子注入形成pnp结构,利用新发现的没有特殊光照时BOE溶液腐蚀pn结n型区域现象,结合BOE溶液氧化硅腐蚀,实现硅纳米线制作.制作完全采用传统MEMS工艺,具有工艺简单,成本低,可控,可靠性好,可批量制作等优点.利用该方法制作出了厚50 nm,宽100 nm的单晶硅纳米线,制作的纳米线可用于一维纳米结构电学性能研究、谐振器研究等.     

Electronically controlled etch-mask for silicon bulk micromachining

Wafers that are to be submitted to anisotropic etching in aqueous KOH are conventionally passivated with a silicon dioxide or nitride layer in which backside windows are etched to define the microstructures. A different method to mask the backside of a silicon wafer for this purpose is presented. The method makes use of the phenomenon that silicon is not etched in KOH when biased above the passivation potential. The mask is defined by applying a set of bias voltages to the front of the wafer instead of patterning a deposited passivation layer at the backside, for which an accurate double-sided alignment is required. The feasibility of the method was demonstrated with the fabrication of membranes and suspended masses of various sizes     

Fabrication of a high aspect ratio nanoporous array on silicon

In this study, a simple method for the fabrication of high aspect ratio silicon nanoporous arrays is developed. A N-type silicon wafer is used as the substrate material. A micro-scale pattern of the desired porous array is transferred to the front surface of the silicon wafer by photolithography after which the wafer is placed in a home-made fixture to efficiently expel the etching generated air and promptly hold the back-side illumination light. A halogen lamp is used as the light source for backside illumination to enhance the electron–hole pair generation. An anodization process is then carried out using a new etchant consisting of hydrofluoric acid and mixed EtOH and EMSO surfactant to effectively polish the pore surfaces and sharpen the tips of the etched pores. A nanochannel array with a nano-tip of 61.4?nm is obtained.     

CO_2激光器加工晶圆切缝控制工艺研究

晶体硅是当前最重要的半导体材料,主要用于微电子技术。随着微电子技术的发展,对晶圆的切割技术要求越来越高,而在实际切割中,对晶圆的切割十分注重于晶圆的切割宽度,以降低晶圆损耗。研究CO2激光切割机的脉宽、频率以及切割速度对晶圆切割宽度的影响,从而达到高效率、小宽度、高标准的激光切割加工。