Acrylate-based nanocomposite zirconium-dispersed polymer dielectric for flexible oxide thin-film transistors with a curvature radius of 2 mm

Novel hybrid dielectric film is synthesized at a low temperature of 150 °C using a solution process. Zirconium acrylate (ZrA) and poly(methyl methacrylate) (PMMA) comprise the inorganic and organic components, respectively. The acrylate-based molecular structure of both ingredients allows the facile formation of hybrid ZrA/PMMA dielectric film with neither additional coupling agent nor ultraviolet photon irradiation. The high quality of the hybrid ZrA/PMMA dielectric film is confirmed by its high dielectric constant of 5.5 and low leakage current density of 1.7 × 10⁻⁸ A/cm² at the electric field of 1 MV/cm. The indium gallium tin oxide (IGTO) transistors with the optimal ZrA/PMMA gate insulator layer are fabricated on the polyimide substrate at the maximum high temperature of 150 °C. They exhibit hysteresis-free high performance with high carrier mobility of 24.3 cm²V⁻¹s⁻¹, gate swing of 0.61 V/decade and I_ON/OFF ratio of 4 × 10⁶. Owing to the intrinsic deformability of hybrid dielectric film, these transistors maintained electrical performance after 100 cycles of mechanical bending to the extremely small radius of curvature of 2 mm.     

Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to <Emphasis Type="Italic">n</Emphasis>-Type SiC for High-Temperature Gas Sensors

We investigated the thermal stability of Pt/TaSi _x /Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The contacts remained ohmic on lightly doped n-type (~1 × 10¹⁶ cm⁻³) 4H-SiC for over 1000 h in air at 300°C. Although a gradual increase in specific contact resistance from 3.4 × 10⁻⁴ Ω cm² to 2.80 × 10⁻³ Ω cm² was observed, the values appeared to stabilize after ~800 h of heating in air at 300°C. The contacts heated at 500°C and 600°C, however, showed larger increases in specific contact resistance followed by nonohmic behavior after 240 h and 36 h, respectively. Concentration profiles from Auger electron spectroscopy and electron energy-loss spectroscopy show that loss of ohmic behavior occurs when the entire tantalum silicide layer has oxidized.     

Evaporated iron disulfide thin films with sulfurated annealing treatments

FeS₂ thin films were grown on a glass substrate using a physical vapor deposition technique at room temperature. Subsequently, the thin films were annealed in two different atmospheres: vacuum and vacuum-sulfur. In the vacuum-sulfur atmosphere a graphite box was used as sulfur container and the films were sulfurated successfully at 200–350 ºC. It was found that annealing in a vacuum-sulfur atmosphere was indispensable in order to obtain polycrystalline FeS₂ thin films. The polycrystalline nature and pure phase were determined by XRD and Raman techniques and the electrical properties by the Hall effect. Using the sulfurating technique, the n-type semiconductor was prepared at 200–350 °C and a p-type at 500 °C. The carrier concentrations were between 1.19×10²⁰ and 2.1×10²⁰ cm⁻³. The mobility was 9.96–5.25 cm² V⁻¹ s⁻¹ and the resistivity was 6.31×10⁻² to 1.089×10⁻² Ω cm. The results obtained from EDS showed that the films prepared in the vacuum-sulfur atmosphere were close to stoichiometric and that the indirect band gap varied between 1.03 and 0.945 eV.     

Influence of Substrate Temperature on Structural and Thermoelectric Properties of Antimony Telluride Thin Films Fabricated by RF and DC Cosputtering

Antimony and tellurium were deposited on BK7 glass using direct-current magnetron and radiofrequency magnetron cosputtering. Antimony telluride thermoelectric thin films were synthesized with a heated substrate. The effects of substrate temperature on the structure, surface morphology, and thermoelectric properties of the thin films were investigated. X-ray diffraction patterns revealed that the thin films were well crystallized. c-Axis preferred orientation was observed in thin films deposited above 250°C. Scanning electron microscopy images showed hexagonal crystallites and crystal grains of around 500 nm in thin film fabricated at 250°C. Energy-dispersive spectroscopy indicated that a temperature of 250°C resulted in stoichiometric Sb₂Te₃. Sb₂Te₃ thin film deposited at room temperature exhibited the maximum Seebeck coefficient of 190 μV/K and the lowest power factor (PF), S ² σ, of 8.75 × 10⁻⁵ W/mK². When the substrate temperature was 250°C, the PF increased to its highest value of 3.26 × 10⁻³ W/mK². The electrical conductivity and Seebeck coefficient of the thin film were 2.66 × 10⁵ S/m and 113 μV/K, respectively.     

Ultraviolet-assisted annealing for low-temperature solution-processed p-type gallium tin oxide (GTO) transparent semiconductor thin films

Solution-processed p-type gallium tin oxide (GTO) transparent semiconductor thin films were prepared at a low temperature of 300 °C using ultraviolet (UV)-assisted annealing instead of conventional high-temperature annealing (> 500 °C). We report the effects of UV irradiation time on the structural, optical, and electrical properties of sol-gel derived GTO thin films and a comparison study of the physical properties of UV-assisted annealed (UVA) and conventional thermally annealed (CTA) GTO thin films. The Ga doping content was fixed at 15 at% in the precursor solution ([Ga]/[Sn]+[Ga] = 15%). After a spin-coating and preheating procedure was performed two times, the dried sol-gel films were heated on a hotplate at 300 °C under UV light irradiation for 1–4 h. Each UVA GTO thin film had a dense microstructure and flat free surface and exhibited an average optical transmittance approaching 85.0%. The level of crystallinity, crystallite size, and hole concentration density of the GTO thin films increased with increasing UV irradiation time. In this study, the UVA 4 h thin film samples exhibited the highest hole concentration (9.87 × 10¹⁷ cm⁻³) and the lowest resistivity (1.8 Ω cm) and had a hole mobility of 5.1 cm²/Vs.     

Highly-impermeable Al2O3/HfO2 moisture barrier films grown by low-temperature plasma-enhanced atomic layer deposition

Polymer substrates are essential components of flexible electronic applications such as OTFTs, OPVs, and OLEDs. However, high water vapor permeability of polymer films can significantly reduce the lifetime of flexible electronic devices. In this study, we examined the water vapor permeation barrier properties of Al₂O₃/HfO₂ mixed oxide films on polymer substrates. Al₂O₃/HfO₂ films deposited by plasma-enhanced atomic layer deposition were transparent, chemically stable in water and densely amorphous. At 60 °C and 90% relative humidity (RH) accelerated condition, 50-nm-thick Al₂O₃/HfO₂ had water vapor transmission rate (WVTR) = 1.44 × 10⁻⁴ g m⁻² d⁻¹, whereas single layers of Al₂O₃ had WVTR = 3.26 × 10⁻⁴ g m⁻² d⁻¹ and of HfO₂ had WVTR = 6.75 × 10⁻² g m⁻² d⁻¹. At 25 °C and 40% RH, 50-nm-thick Al₂O₃/HfO₂ film had WVTR = 2.63 × 10⁻⁶ g m⁻² d⁻¹, which is comparable to WVTR of conventional glass encapsulation.     

Structural,magnetic and electrical properties of Fe/Si system

Interface studies in metal/semiconductor systems are important due to their potential technological application in microelectronics. A total of 80 nm Fe film was deposited on Si(1 1 1) substrate using electron beam evaporation technique at a vacuum of 2×10⁻⁷ Torr. The samples were annealed at temperatures 500 and 600 °C for 1 h in 3×10⁻⁵ Torr for the formation of silicide phases. GIXRD results show a stable disilicides FeSi₂ formation at the interface at annealing temperature 600 °C. The coercivity determined from MOKE hysteresis curves for as-deposited and annealed samples are 14.91, 29.82 and 31.01 Oe. The Schottky barrier height, as estimated by the current–voltage measurement is 0.59, 0.54 and 0.49 eV for pristine and annealed samples at 500 and 600 °C, respectively, and concludes that the barrier height values as a function of the heat of formation of the silicides.     

Surface-induced highly oriented perylo[1,12-b,c,d]selenophene thin films for high performance organic field-effect transistors

Epitaxial crystallization of perylo[1,12-b,c,d]selenophene (PESE) on highly oriented polyethylene (PE) substrate through vapor phase deposition has been achieved. Oriented PESE crystals with different crystalline morphologies can be fabricated by changing the temperature of PE substrate during vacuum evaporation. When the PE substrate temperature is lower than 70 °C, sparsely dispersed PESE lathlike crystals are produced with their long axis preferentially aligned perpendicular to the chain direction of PE crystals. While the close films of PESE with lathlike crystals aligned with long axis parallel to the chain direction of PE film were obtained above 90 °C. Transistors based on expitaxially crystallized PESE films have been fabricated and the transistor properties were also studied. It is found that transistors show different electrical characteristics depending on the preparation conditions of expitaxially crystallized PESE films. The transistors based on the PESE/PE-SiO₂/Si with PESE deposited on oriented PE film at low temperature, i.e., <70 °C, display a similar poor properties with the PESE/OTS-SiO₂/Si type transistors. However, when the deposition temperature was elevated to 90 °C, the transistors exhibit a maximum field-effect mobility of 4.4 × 10⁻² cm² V⁻¹ s⁻¹ and maximum on/off ratio of 2.0 × 10⁵, which are about 2 orders of magnitudes higher than the PESE/OTS-SiO₂/Si based transistors.     

Influence of crystallinity of as-deposited Ge film on formation of quantum dot in carbon-mediated solid-phase epitaxy

The influence of crystallinity of as-deposited Ge films on Ge quantum dot (QD) formation via carbon (C)-mediated solid-phase epitaxy (SPE) was investigated. The samples were fabricated by solid-source molecular beam epitaxy (MBE). Ge/C/Si structure was formed by sequential deposition of C and Ge at deposition temperature (T_D) of 150–400 °C, and it was heat-treated in the MBE chamber at 650 °C. In the case of amorphous or a mixture of amorphous and nano-crystalline Ge film grown for T_D ≤250 °C, density of QDs increased with increasing T_D due to the increase of C-Ge bonds in Ge layer. Ge QDs with diameter of 9.2±2.1 nm were formed in the highest density of 8.3×10¹¹ cm⁻² for T_D =250 °C. On the contrary, in the case of polycrystalline Ge film for T_D ≥300 °C, density of QDs decreased slightly. This is because C incorporation into Ge layer during SPE was suppressed due to the as-crystallized columnar grains. These results suggest that as-deposited Ge film in a mixture of amorphous and nano-crystalline state is suitable to form small and dense Ge QDs via C-mediated SPE.     

High Ionic Conductivity Motivated by Multiple Ion-Transport Channels in 2D MOF-Based Lithium Solid State Battery

Metal-organic frameworks (MOFs) have been proposed as novel fillers for constructing polymer solid electrolytes based composite electrolytes. However, MOFs are generally used as passive fillers, in-depth revealing the binding mode between MOFs and polyethylene oxide (PEO), the critical role of MOFs in facilitating Li⁺ transport in solid electrolytes is full of challenges. Herein, inspired by density functional theory (DFT) the 2D-MOF with rich unsaturated metal coordination sites that can bind the O atom in PEO through the metal–oxygen bond,  anchor TFSI⁻ to release Li⁺, resulting in a remarkable Li⁺ transference number of 0.58, is reported according well with the experimental results and molecular dynamics (MD) simulation. Impressively, after the introduction of the 2D-MOF, the Li⁺ can rapidly hop along the benzene ring center within the 2D-MOF plane, and the interface between the benzene ring and PEO can also serve as a fast Li⁺ migration pathway, delivering multiple ion-transport channels, which present a high ion conductivity of 4.6 × 10⁻⁵ S cm⁻¹ (25 °C). The lithium symmetric battery is stable for 1300 h at 60 °C, 0.1 mA cm⁻². The assembled lithium metal solid state battery maintains high capacity of 162.8 mAh g⁻¹ after 500 cycles at 60 °C and 0.5 C. This multiple ion-transport channels approach brings new ideas for designing advanced solid electrolytes.     

A novel micro-pellistor based on nanoporous alumina beam support

The traditional design of the catalytic combustion gas sensor in Micro ElectroMechanical Systems (MEMS) micro-hotplate employs a Pt resistive track as the micro-heater. The realized structure and fabrication are the key elements of the micro-hotplate. Directly fabrication of micro-pellsitor catalyst is very difficult because of the small dimensions of the active area. In this paper, a novel micro-pellistor was designed by combining micro fabrication technique and nano technology. The supporting beams and micro-hotplate of the micro-pellistor were made of nonoporous alumina film. The active area of the designed and fabricated micro-pellistors ranges from 200×200 ??m² to 450×300 ??m². The micro-pellistor was heated by platinum thin film heater and the Pd catalyst was deposited by dipping the PdCl₂ solution on the detecting element. The lowest power consumption is 50 mW at 500 °C and the maximum temperature can reach 900 °C before rupture. The response of the devices to methane is also tested. The new design provides a new way to fabricate micro-pellistor.     

A Hetero-Layered,Mechanically Reinforced,Ultra-Lightweight Composite Polymer Electrolyte for Wide-Temperature-Range,Solid-State Sodium Batteries

The practical use of polyethylene oxide polymer electrolyte in the solid-state sodium metallic batteries (SSMBs) suffers from the retard Na⁺ diffusion at the room temperature, mechanical fragility as well as the oxidation tendency at high voltages. Herein, a hetero-layered composite polymeric electrolyte (CPE) is proposed to enable the simultaneous interfacial stability with the high voltage cathodes (till 4.2 V) and Na metallic anode. Being incorporated within the polymer matrix, the sand-milled Na₃Zr₂Si₂PO₁₂ nanofillers and nanocellulose scaffold collectively endow the thin-layer (25 µm), ultralightweight (1.65 mg cm⁻²) CPE formation with an order of magnitude enhancement of the mechanical strength (13.84 MPa) and ionic conductivity (1.62 × 10⁻⁴ S cm⁻¹) as compared to the pristine polymer electrolyte, more importantly, the improved dimension stability up to 180 °C. Upon the integration of the hetero-layered CPE with the iron hexacyanoferrate FeHCF cathode (1 mAh cm⁻²) and the Na foil, the cell model can achieve the room-temperature cycling stability (93.73% capacity retention for 200 cycles) as well as the high temperature tolerance till 80 °C, which inspires a quantum leap toward the surface-wetting-agent-free, energy-dense, wide-temperature-range SSMB prototyping.     

3D HfO2 Thin Film MEMS Capacitor with Superior Energy Storage Properties

Capacitors are ubiquitous and crucial components in modern technologies. Future microelectronic devices require novel dielectric capacitors with higher energy storage density, higher efficiency, better frequency and temperature stabilities, and compatibility with integrated circuit (IC) processes. Here, in order to overcome these challenges, a novel 3D HfO₂ thin film capacitor is designed and fabricated by an integrated microelectromechanical system (MEMS) process. The energy storage density (ESD) of the capacitor reaches 28.94 J cm⁻³, and the energy storage efficiency of the capacitor is up to 91.3% under an applied electric field of 3.5 MV cm⁻¹. The ESD can be further improved by reducing the minimum period structure size of the 3D capacitor. Moreover, the 3D capacitor exhibits excellent temperature stability (up to 150 °C) and charge-discharge endurance (10⁷ cycles). The results indicate that the 3D HfO₂ thin film MEMS capacitor has enormous potential in energy storage applications in harsh environments, such as pulsed discharge and power conditioning electronics.     

High Power and Energy Density Aqueous Proton Battery Operated at −90 °C

Freezing electrolyte and sluggish ionic migration kinetics limited the low-temperature performance of rechargeable batteries. Here, an aqueous proton battery is developed, which achieves both high power density and energy density at the ultralow temperature conditions. Electrolyte including 2 m HBF₄  +  2 m Mn(BF₄)₂ is used for the ultralow freezing point of below − 160  ° C and high ionic conductivity of 0.21 mS cm⁻¹ at − 70  ° C. Spectroscopic and nuclear magnetic resonance analysis demonstrate the introduction of BF₄⁻ anions efficiently break the hydrogen-bond networks of original water molecules, resulting in ultralow freezing point. Based on H⁺ uptake/removal reaction in alloxazine (ALO) anode and MnO₂/Mn²⁺ conversion in carbon felt cathode, the aqueous proton battery can operate regularly even at − 90  ° C and obtain a high specific discharge capacity of 85 mA h g⁻¹. Benefiting from the rapid diffusion of proton and the pseudocapacitive character of ALO electrolyte, this battery shows a high specific energy density of 110 Wh kg⁻¹ at a specific power density of 1650 W kg⁻¹ at − 60  ° C. This work presents a new way of developing low-temperature batteries.     

Growth and characterization of indium oxide diodes prepared by reactive magnetron sputtering

The electrical properties of Cr/Pt/Au and Ni/Au ohmic contacts with unintentionally doped In₂O₃ (U-In₂O₃) film and zinc-doped In₂O₃ (In₂O₃:Zn) prepared by reactive magnetron sputtering deposition are described. The lowest specific contact resistance of Cr/Pt/Au and Ni/Au is 2.94 × 10⁻⁶ and 1.49 × 10⁻² Ω-cm², respectively, as determined by the transmission line model (TLM) after heat treatment at 300 °C by thermal annealing for 10 min in nitrogen ambient. The indium oxide diodes have an ideality factor of 1.1 and a soft breakdown voltage of 5 V. The reverse leakage current prior to breakdown is around 10⁻⁵ A.     

Photoluminescence of phosphorous doped Ge on Si (100)

Photoluminescence (PL) of selectively grown phosphorus (P) doped germanium (Ge) is investigated. 350–600 nm thick P-doped Ge is grown on 100 nm thick P-doped Ge buffer layer, which is annealed at 800 °C before the main part of Ge deposition. In the case of Ge deposited at 325 °C, approximately two times higher PL intensity is observed by P doping of ~3.2×10¹⁹ cm⁻³. Further increase of PL intensity by a factor of 1.5 is observed by increasing the growth temperature from 325 °C to 400 °C due to improved crystal quality. Varying PH₃ partial pressure at 400 °C, red shift of the PL occurred with increasing P concentration due to higher bandgap narrowing. With increasing P concentration up to ~1.4×10¹⁹ cm⁻³ at 400 °C the PL peak intensity increases by filling electrons into the L valley and decreases due to enhanced point defect concentration and degraded crystallinity. By post-annealing at 500–800 °C, the PL intensity is further increased by a factor of 2.5 because of increased active P concentration and improved crystal quality. Reduced direct bandgap energy by introducing tensile strain is also observed.     

A Scalable,Robust Polyvinyl-Butyral-Based Solid Polymer Electrolyte with Outstanding Ionic Conductivity for Laminated Large-Area WO3–NiO Electrochromic Devices

Polyvinyl butyral (PVB) is a well-established polymer interlayer material that has been used in laminated safety glass panels for over 80 years. However, its intrinsically poor ionic conductivity (σ) severely restricts its widespread application as a solid polymer electrolyte (SPE) for laminated WO₃–NiO electrochromic devices (ECDs). Here, a new strategy for significantly improving the σ of PVB via a cross-linking reaction with 3-glycidoxypropyltrimethoxysilane (KH560) is presented. The cross-linked PVB-SPE with 10 wt.% KH560 exhibits the highest room-temperature σ value among the investigated samples (1.51 × 10⁻⁴ S cm⁻¹), which is also higher than that of previously reported PVB-based SPEs (10⁻⁵–10⁻⁷ S cm⁻¹). Additionally, the prepared SPE exhibits comprehensive optical, mechanical, and thermal performances, including a high visible transmittance (>91%), relatively high adhesive strength (2.13 MPa), and superior thermal stability (up to 150 °C). Laminated WO₃–NiO ECDs with dimensions of 5 × 5 cm² and 20 × 20 cm², fabricated by leveraging the aforementioned properties of the electrolyte, operate stably at temperatures ranging from −20 to 80 °C, underscoring the potential of the PVB-SPE for realizing commercially viable large-area ECDs.     

Preparation and Characterization of Ultralow-Dielectric-Constant Porous SiCOH Thin Films Using 1,2-Bis(triethoxysilyl)ethane,Triethoxymethylsilane, and a Copolymer Template

Ultralow-dielectric-constant (k) porous SiCOH films have been prepared using 1,2-bis(triethoxysilyl)ethane, triethoxymethylsilane, and a poly(ethylene oxide)–poly(propylene oxide)–poly(ethylene oxide) triblock copolymer template by means of spin-coating. The resulting films were characterized by cross-section scanning electron microscopy, small-angle x-ray diffraction, atomic force microscopy, Fourier-transform infrared spectroscopy, nanomechanical testing, and electrical measurements. Thermal treatment at 350°C for 2 h resulted in the formation of ultralow-k films with k of ∼2.0, leakage current density of 3 × 10⁻⁸ A/cm² at 1 MV/cm, reduced modulus (E _r) of ∼4.05 GPa, and hardness (H) of ∼0.32 GPa. After annealing between 400°C and 500°C for 30 min, the resulting films showed fluctuant k values of 1.85 to 2.22 and leakage current densities of 3.7 × 10⁻⁷ A/cm² to 3 × 10⁻⁸ A/cm² at 0.8 MV/cm, likely due to the change of the film microstructure. Compared with 350°C annealing, higher-temperature annealing can improve the mechanical strength of the ultralow-k film, i.e., E _r ≈ 5 GPa and H ≈ 0.56 GPa after 500°C annealing.     

Glassy Metal–Organic-Framework-Based Quasi-Solid-State Electrolyte for High-Performance Lithium-Metal Batteries

Enhancing ionic conductivity of quasi-solid-state electrolytes (QSSEs) is one of the top priorities, while conventional metal–organic frameworks (MOFs) severely impede ion migration due to their abundant grain boundaries. Herein, ZIF-4 glass, a subset of MOFs, is reported as QSSEs (LGZ) for lithium-metal batteries. With lean Li content (0.12 wt%) and solvent amount (19.4 wt%), LGZ can achieve a remarkable ion conductivity of 1.61 × 10⁻⁴ S cm⁻¹ at 30 °C, higher than those of crystalline ZIF-4-based QSSEs (LCZ, 8.21 × 10⁻⁵ S cm⁻¹) and the reported QSSEs containing high Li contents (0.32–5.4 wt%) and huge plasticizer (30–70 wt%). Even at −56.6 °C, LGZ can still deliver a conductivity of 5.96 × 10⁻⁶ S cm⁻¹ (vs 4.51 × 10⁻⁷ S cm⁻¹ for LCZ). Owing to the grain boundary-free and isotropic properties of glassy ZIF-4, the facilitated ion conduction enables a homogeneous ion flux, suppressing Li dendrites. When paired with LiFePO₄ cathode, LGZ cell demonstrates a prominent cycling capacity of 101 mAh g⁻¹ for 500 cycles at 1 C with the near-utility retention, outperforming LCZ (30.7 mAh g⁻¹) and the explored MOF-/covalent–organic frameworks (COF)-based QSSEs. Hence, MOF glasses will be a potential platform for practical quasi-solid-state batteries in the future.     

Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating

By using our low-energy Ar plasma enhanced chemical vapor deposition (CVD) at a substrate temperature below 100 °C during plasma exposure without substrate heating, modulation of valence band structures and infrared photoluminescence can be observed by change of strain in a Si/strained Si_0.4Ge_0.6/Si(100) heterostructure. For the strained Si_0.5Ge_0.5 film, Hall mobility at room temperature was confirmed to be as high as 660 cm² V⁻¹ s⁻¹ with a carrier concentration of 1.3×10¹⁸ cm⁻³ for n-type carrier, although the carrier origin was unclear. Moreover, good rectifying characteristics were obtained for a p⁺Si/nSi_0.5Ge_0.5 heterojunction diode. This indicates that the strained Si-Ge alloy and Si films and their heterostructures epitaxially grown by our low-energy Ar plasma enhanced CVD without substrate heating can be applicable effectively for various semiconductor devices utilizing high carrier mobility, built-in potential by doping and band engineering.