High velocity SAW using aluminum nitride film on unpolished nucleation side of free-standing CVD diamond

High performances surface acoustic wave (SAW) filters based on aluminium nitride (AlN)/diamond layered structure have been fabricated. The C-axis oriented aluminum nitride films with various thicknesses were sputtered on unpolished nucleation side of free-standing polycrystalline chemical vapor deposition (CVD) diamond obtained by silicon substrate etching. Experimental results show that high order modes as well as Rayleigh waves are excited. Experimental results are in good agreement with the theoretical dispersion curves determined by software simulation with Green's function formalism. We demonstrate that high phase velocity first mode wave (so-called Sezawa wave) with high electromechanical coupling coefficient are obtained on AlN/diamond structure. This structure also has a low temperature coefficient of frequency (TCF), and preliminary results suggest that a zero TCF could be expected.     

Surface acoustic wave properties of (100) AIN films on diamond with different IDT positions

(100)AlN films have better surface acoustic wave (SAW) properties than (002) AlN films. In this research, (100) AlN films were combined with diamonds as a new composite SAW substrate. The SAW properties of (100) AlN films on diamonds were analyzed with 4 composite structures: interdigital transducer (IDT)/(100)AlN/diamond, (100)AlN/IDT/diamond, IDT/(100)AlN/metal/diamond, and metal/IDT/(100) AlN/diamond, and they exhibited some excellent SAW properties. Our research results provide a predictable and theoretical basis for further application on high-velocity SAW devices.     

Growth of A1N piezoelectric film on diamond for high-frequency surface acoustic wave devices

Diamond films are very desirable for application to SAW devices because of their high acoustic wave velocity, which allows the extending of the frequency limit of operation at a given interdigital transducer line-width resolution. Use of high-quality AIN as the piezoelectric layer in conjunction with diamond is also desirable because of its high SAW velocity--the highest among all piezoelectric materials--together with its excellent electrical, mechanical, and chemical properties. The problems arising in the growth of A1N films on diamond have prevented, until now, the use of this combination of materials. In this paper we present recent results on the growth of highly oriented, low-stressed A1N films on diamond. SAW propagation on A1N/diamond has been theoretically investigated together with electromechanical coupling for both the Rayleigh and the Sezawa modes. The theoretical calculations show that high SAW velocities are achievable with good coupling efficiencies. Under proper conditions very large piezoelectric couplings are predicted--k2 = 2.2 and 4% for the Rayleigh and the Sezawa wave, respectively--comparable to those observed in strongly piezoelectric single crystals such as LiNbO3, but with SAW velocities approximately two-fold higher. Experiments performed on A1N/diamond/Si SAW test devices have shown good agreement between experimental results and theoretical predictions and demonstrate the feasibility of SAW devices based on this technology.     

Theoretical analysis of SAW propagation characteristics in (100) oriented AlN/diamond structure

In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al electrodes as well as the thickness of electrode on phase velocity, coupling coefficient, and reflectivity of SAWs are illustrated. Propagation characteristics of SAWs in (002) AlN/diamond-based structures are also presented for comparison. Simulation results show that to retain a large reflectivity for the design of RF filters and duplexers, the Cu IDT/(100) AlN/diamond structure possesses the highest phase velocity and largest coupling coefficient at the smallest AlN film thickness- to-wavelength ratio.     

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 < or = chi < or = 1) substrates using the radio frequency (RF) sputtering technique. In comparison with a single AlxGa1-xN layer deposited on c-Al2O3 with the same total film thickness, a ZnO/AlxGa1-xN/c-Al2O3 multilayer structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.     

The characterization of sputtered polycrystalline aluminum nitrideon silicon by surface acoustic wave measurements

Polycrystalline aluminum nitride films were deposited on Si₃ N₄ coated (100) silicon substrates by the reactive sputtering method. We have carried out experiments to evaluate the effect of AlN material parameters on the SAW characteristics. The SAW transducers were fabricated by forming interdigitated Al electrodes on top of the AlN films and transmission measurements made over the frequency range from 50 MHz to 1.5 GHz. The SAW characteristics were correlated with material parameters of crystallite orientation, grain size, surface morphology and oxygen concentration. A key material parameter affecting the SAW characteristics was found to be the preferred degree of crystallite orientation with the c-axis normal to the plane of the substrate. The better oriented the AlN grains, the stronger the SAW response, the higher the SAW phase velocity, and the lower the insertion and propagation losses over the entire frequency range of measurement. Above 500 MHz the propagation losses of the well oriented films followed a frequency squared dependence only slightly higher than the reported values for the best epitaxial films. The coupling factors deduced from the transducer characteristics are in the upper range of values reported by Tsubouchi for epitaxial AlN films deposited on the basal plane of sapphire. There was a strong correlation between the X-ray diffraction intensity from the (002) planes and the oxygen content in the films     

Synthesis and surface acoustic wave properties of AlN films deposited on LiNbO3 substrates

The c-axis-oriented aluminum nitride (AlN) films were deposited on z-cut lithium niobate (LiNbO₃) substrates by reactive RF magnetron sputtering. The crystalline orientation of the AlN film determined by x-ray diffraction (XRD) was found to be dependent on the deposition conditions such as substrate temperature, N₂ concentration, and sputtering pressure. Highly c-axis-oriented AlN films to fabricate the AlN/LiNbO₃-based surface acoustic wave (SAW) devices were obtained under a sputtering pressure of 3.5 mTorr, N₂ concentration of 60%, RF power of 165 W, and substrate temperature of 400°C. A dense pebble-like surface texture of c-axis-oriented AlN film was obtained by scanning electron microscopy (SEM). The phase velocity and the electromechanical coupling coefficient (K²) of SAW were measured to be about 4200 m/s and 1.5%, respectively. The temperature coefficient of frequency (TCF) of SAW was calculated to be about -66 ppm/°C     

Effect of diamond nucleation process on propagation losses of AlN/diamond SAW filter

In this work, the effect of a diamond nucleation process on freestanding aluminium nitride (AlN)/diamond surface acoustic wave (SAW) device performances was studied. Before diamond deposition, silicon (Si) substrates have been mechanically nucleated, using an ultrasonic vibration table with submicron diamond slurry, and bias-enhanced nucleated (BEN). Freestanding diamond layers obtained on mechanically scratched Si substrates exhibit a surface roughness of R(MS) = 13 nm, whereas very low surface roughness (as low as R(MS) < or = 1 nm) can be achieved on a freestanding BEN diamond layer. Propagation losses have been measured as a function of the operating frequency for the two nucleation techniques. Dispersion curves of phase velocities and electromechanical coupling coefficient (K2) were determined experimentally and by calculation as a function of normalized thickness AlN film (kh(AlN) = 2pi h(AlN)/lambda). Experimental results show that the propagation losses strongly depend on the nucleation technique, and that these losses are weakly increased with frequency when the BEN technique is used.     

Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires

High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.     

Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors

Epitaxial AlN films were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300 degrees C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphirebased SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AlN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the III-nitrides.     

Investigations on AlN/sapphire piezoelectric bilayer structure for high-temperature SAW applications

This paper explores the possibility of using AlN/sapphire piezoelectric bilayer structures for high-temperature SAW applications. To determine the temperature stability of AlN, homemade AlN/sapphire samples are annealed in air atmosphere for 2 to 20 h at temperatures from 700 to 1000°C. Ex situ X-ray diffraction measurements reveal that the microstructure of the thin film is not affected by temperatures below 1000°C. Ellipsometry and secondary ion mass spectroscopy investigations attest that AlN/sapphire is reliable up to 700°C. Beyond this temperature, both methods indicate ongoing surface oxidation of AlN. Additionally, Pt/Ta and Al interdigital transducers are patterned on the surface of the AlN film. The resulting SAW devices are characterized up to 500°C and 300°C, respectively, showing reliable frequency response and a large, quasi-constant temperature sensitivity, with a first-order temperature coefficient of frequency around -75 ppm/°C. Between room temperature and 300°C, both electromechanical coupling coefficient K(2) and propagation losses increase, so the evolution of delay lines' insertion losses with temperature strongly depends on the length of the propagation path.     

Simulation of characteristics of a SiO2/c-axis-oriented LiNbO3/diamond surface acoustic wave

High-frequency surface acoustic wave (SAW) devices based on diamond that have been realized to date utilize c-axis-oriented ZnO as the piezoelectric thin film. This material, with SiO2 overlay, shows excellent characteristics of a high phase velocity of over 10,000 m/s and a zero temperature coefficient, and it has been successfully applied to high-frequency SAW filters and resonators. To expand on materials used on diamond, the theoretical calculation has been carried out for LiNbO3/diamond, and a high electromechanical coupling coefficient up to 9.0% is expected. In this work, the characteristics of SiO2/LiNbO3/diamond were studied by computer simulation, emphasizing a zero temperature coefficient with a high coupling coefficient. Calculations are carried out for the phase velocity, the electromechanical coupling coefficient, and the temperature coefficient of the Rayleigh wave and its higher mode Sezawa wave. As a result, SiO2/IDT/LiNbO3/diamond is found to offer a zero temperature coefficient with a very high coupling coefficient up to 10.1% in conjunction with a high phase velocity of 12,100 m/s.     

Simulation of characteristics of a LiNbO3/diamond surface acoustic wave

High-frequency surface acoustic wave (SAW) devices based on diamond that have been produced to date utilize the SiO2/ZnO/diamond structure, which shows excellent characteristics of a phase velocity of over 10,000 m/s with a zero temperature coefficient; this structure has been successfully applied to high-frequency narrowband filters and resonators. To expand material systems to wideband applications, c-axis-oriented LiNbO3 on diamond was studied and a coupling coefficient up to 9.0% was estimated to be obtained. In this paper, the characteristics of LiNbO3/diamond with the assumption that the LiNbO3 film is a single crystal have been studied by theoretical calculations to find higher coupling coefficient conditions. Calculations are made for the phase velocity, the coupling coefficient, and the temperature coefficient of the Rayleigh wave and its higher mode Sezawa waves. As a result, LiNbO3/diamond is found to offer a very high electromechanical coupling coefficient of up to 16% in conjunction with a high phase velocity of 12,600 m/s and a small temperature coefficient of 25 ppm/deg. This characteristic is suitable for wide bandwidth applications in high-frequency SAW devices.     

High temperature assessment of nitride-based devices

The high temperature characterization of GaN-based devices, including high electron mobility transistors (HEMTs), p-i-n photodiodes and surface acoustic wave (SAW) filters is reported. Transmission line method (TLM) measurements reveal the reversible behaviour of both the ohmic contact resistance and the two-dimensional electron gas (2DEG) mobility. AlGaN/GaN HEMTs on sapphire and SiC substrates present a reduction of the drain current and the transconductance as temperature increases. The responsivity of InGaN/GaN photodiodes is enhanced and shifted to larger wavelengths with temperature, recovering its original value after the thermal cycle. The temperature coefficient of frequency of SAW filters on AlN epilayers on different substrates has been measured. The influence of temperature on the different surface acoustic modes is compared.     

Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.     

Theoretical investigation of surface acoustic wave in the new, three-layered structure: ZnO/AlN/diamond

The new layered structure, ZnO/AlN/diamond, for surface acoustic wave (SAW) devices is investigated for gigahertz-band applications. This structure combines the advantages of both piezoelectric materials, with a high electromechanical coupling coefficient (K2) of ZnO and high acoustic velocity of AlN. Theoretical results show that Rayleigh mode SAWs with large phase velocities up to 12,200 m/s and large K2 from 1 to 3% were generated with this new structure.     

Shear mode coupling and tilted grain growth of AlN thin films in BAW resonators

Polycrystalline AlN thin films were deposited by RF reactive magnetron sputtering on Pt(111)/Ti electrode films. The substrates were tilted by an angle ranging from 40/spl deg/ to 70/spl deg/ with respect to the target normal. A low deposition temperature and a high sputter gas pressure were found ideal for tilted growth. The resulting grain tilt angle amounts to about half the substrate tilt angle. For coupling evaluation, 5 GHz solidly mounted resonator structures have been realized. The tilted grain AlN films exhibited a permittivity in the 9.5-10.5 range and loss tangent of 0.3%. Two shear modes as well as the longitudinal mode could be clearly identified. The coupling coefficient k/sub eff//sup 2/, of the fundamental thickness shear mode (TSO) was found to be about 0.5%, which is compatible with a c-axis tilt of about 6/spl deg/.     

Analysis of SAW properties of epitaxial ZnO films grown on R-Al2O3 substrates

ZnO thin films with a high piezoelectric coupling coefficient are widely used for high frequency and low loss surface acoustic wave (SAW) devices when the film is deposited on top of a high acoustic velocity substrate, such as diamond or sapphire. The performance of these devices is critically dependent on the quality of the ZnO films as well as of the interface between ZnO and the substrate. In this paper, we report the studies on piezoelectric properties of epitaxial (112¯0) ZnO thin films grown on R-plane sapphire substrates using metal organic chemical vapor deposition (MOCVD) technique. The c-axis of the ZnO film is in-plane. The ZnO/R-Al₂O₃ interface is atomically sharp. SAW delay lines, aligned parallel to the c-axis, were used to characterize the surface wave velocity, coupling coefficient, and temperature coefficient of frequency as functions of film thickness to wavelength ratio (h/λ). The acoustic wave properties of the material system were calculated using Adler's matrix method, and the devices were simulated using the quasi-static approximation based on Green's function analysis     

Theoretical study on SAW characteristics of layered structuresincluding a diamond layer

Diamond has the highest surface acoustic wave (SAW) velocity among all materials and thus can provide much advantage for fabrication of high frequency SAW devices when it is combined with a piezoelectric thin film. Basic SAW properties of layered structures consisting of a piezoelectric material layer, a diamond layer and a substrate were examined by theoretical calculation. Rayleigh mode SAW's with large SAW velocities up to 12,000 m/s and large electro-mechanical coupling coefficients from 1 to 11% were found to propagate in ZnO/diamond/Si, LiNbO₃/diamond/Si and LiTaO₃/diamond/Si structures. It was also found that a SiO₂/ZnO/diamond/Si structure can realize a zero temperature coefficient of frequency with a high phase velocity of 8,000-9,000 m/s and a large electro-mechanical coupling coefficient of up to 4%     

Epitaxial growth of AlN on single crystal Mo substrates

We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30° rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30° rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 °C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices.