共查询到19条相似文献,搜索用时 62 毫秒
1.
通过对碲镉汞材料进行As^+注入以及退火,成功地制备P-on-N型光伏器件。器件的截止波长为5.5μm,黑体探测率D^*(500K,1K,100)可达2.1×10^10cmHz^1/2W^-1。通过对器件的变温电流-电压关系的测量,利用等效电路进行拟合后,我们发现,限制器件优质因子RoA的主要因素是并联电阻。估计此并联电阻可能由表面漏电和体缺陷引起。 相似文献
2.
采用液相外延(LPE)生长的中波HgCdTe薄膜,基于B离子注入n-on-p平面结技术,制备了LBIC测试结构和I-V测试芯片并进行了相应的测试和分析.LBIC测试结果表明,HgCdTe pn结实际结区尺寸扩展4~5 μm,这主要与光刻、B离子注入以及注入后低温退火等器件工艺有关.二极管器件C-V和I-V特性研究表明,所制备的HgCdTe pn结不是突变结也不是线性缓变结.中波HgCdTe二极管器件最高动态阻抗大于30GΩ,器件优值R0A高达1.21×105Ωcm2,表现出较好的器件性能. 相似文献
3.
采用不同工艺制备了中波碲镉汞(Hg Cd Te)雪崩二极管(APD)器件,利用不同方法对其结特性和增益随偏压变化关系进行了表征,并基于Beck模型和肖克莱解析式进行了拟合分析.结果表明,不同工艺制备的APD器件饱和耗尽区宽度分别为1. 2μm和2. 5μm,较宽的耗尽层有效抑制了高反偏下器件的隧道电流,器件有效增益则从近100提高至1 000以上.用肖克莱解析式拟合Hg Cd Te APD器件增益-偏压曲线,获得了较好的效果.拟合结果与Sofradir公司的J. Rothman的报道相似. 相似文献
4.
掺砷碲镉汞是一科用于制作p-on-n器件和实现高性能碲镉汞探测器及多色红外焦平面阵列的关键材料。对掺砷碲镉汞的相关文献进行了归纳分析。砷渺活效率与退火条件及砷的浓度直接相关。对于掺砷浓度在10^16-10^18cm-3范围内的碲镉汞,通过300℃/16h和240℃/4sh两步退火可将样品前表面激活为P型材料,但汞空位的浓度相对于背面较高。样品背面靠近衬底处可能存在AsT和AsHg缺陷。 相似文献
5.
近年来,研究各种杂质对碲镉汞单晶电物理性能的影响的兴趣日增。尤其在进行研究过程中已经表明,为了获得电导性,可适当地利用铟或镓这些Ⅲ族元素作为熔合杂质。这些杂质扩散相当快,能取代金属晶格中的汞或镉原子,起到施主中心的作用。本研究表明,在离子熔合和后继热处理相结合的一定条件下,铟也是呈现出受主特性。 相似文献
6.
7.
首先简要介绍激光雷达的主要军事应用、激光雷达对接收器的性能需求及激光雷达接收器的现状,综述碲镉汞材料特点、碲镉汞雪崩光电二极管探测器特点,与现有激光雷达接收器相比碲镉汞雪崩光电二极管作为激光雷达接收器的优势及制备技术;综述国外碲镉汞雪崩光电二极管用于激光雷达接收器的发展现状;最后分析我国发展用于激光雷达接收器的碲镉汞雪崩光电二极管可行性。 相似文献
8.
碲镉汞pn结制备技术的研究进展 总被引:1,自引:0,他引:1
作为一种禁带宽度可调的半导体,碲镉汞(MCT)至今仍是一种最有效的可在较宽波长(1~25μm)范围内工作的红外探测器.由于材料性质敏感,MCT器件的制备一直是一项具有挑战性的工作.有若干种pn结制备方法可用于制备MCT光伏器件.离子注入是最常用的一种,但该方法需要额外的退火处理.一些替代技术,例如离子束研磨或反应离子刻蚀等,近来年引起较多关注.MCT体晶和外延层的导电类型转换是材料生产和器件制备中最重要的工艺之一.通过对近年来部分英语期刊文献的归纳分析,介绍了MCTpn结制备技术的研究进展. 相似文献
9.
10.
采用不同工艺制备了中波碲镉汞雪崩二极管(HgCdTe APD)器件,利用不同方法对其结特性和增益随偏压变化关系进行了表征,并基于Beck模型和肖克莱解析式进行了拟合分析。结果表明,不同工艺制备的APD器件饱和耗尽区宽度分别为1.2μm 和2.5μm,较宽的耗尽层有效抑制了高反偏下器件的隧道电流,器件有效增益则从近100提高至1000以上。采用拟合HgCdTe APD器件增益-偏压曲线获得了较好的效果,且拟合得到的参数与Sofradir的Rothman的结果相似。 相似文献
11.
MBE growth and characterization of in situ arsenic doped HgCdTe 总被引:2,自引:0,他引:2
A. C. Chen M. Zandian D. D. Edwall R. E. De Wames P. S. Wijewarnasuriya J. M. Arias S. Sivananthan M. Berding A. Sher 《Journal of Electronic Materials》1998,27(6):595-599
We report the results of in situ arsenic doping by molecular beam epitaxy using an elemental arsenic source. Single Hg1−xCdxTe layers of x ∼0.3 were grown at a lower growth temperature of 175°C to increase the arsenic incorporation into the layers.
Layers grown at 175°C have shown typical etch pit densities of 2E6 with achievable densities as low as 7E4cm−2. Void defect densities can routinely be achieved at levels below 1000 cm−2. Double crystal x-ray diffraction rocking curves exhibit typical full width at half-maximum values of 23 arcsec indicating
high structural quality. Arsenic incorporation into the HgCdTe layers was confirmed using secondary ion mass spectrometry.
Isothermal annealing of HgCdTe:As layers at temperatures of either 436 or 300°C results in activation of the arsenic at concentrations
ranging from 2E16 to 2E18 cm−3. Theoretical fits to variable temperature Hall measurements indicate that layers are not compensated, with near 100% activation
after isothermal anneals at 436 or 300°C. Arsenic activation energies and 77K minority carrier lifetime measurements are consistent
with published literature values. SIMS analyses of annealed arsenic doping profiles confirm a low arsenic diffusion coefficient. 相似文献
12.
Modeling of arsenic activation in HgCdTe 总被引:5,自引:0,他引:5
M. A. Berding A. Sher M. van Schilfgaarde A. C. Chen J. Arias 《Journal of Electronic Materials》1998,27(6):605-609
We present a theoretical examination of the behavior of arsenic atoms in Hg1−xCdxTe for x=0.3, focusing on the thermodynamic conditions that most closely mimic molecular beam epitaxial growth and subsequent
annealing steps. We show that, for molecular beam epitaxial growth where tellurium-saturated conditions apply, arsenic incorporates
onto the cation sublattice and becomes inactive. A significant fraction of these arsenic atoms are bound to mercury vacancies.
We also propose a model of the activation, which involves transfer of the arsenic from the cation to the anion sublattice.
The model suggests that activation anneals must be done at high enough temperatures to surmount an activation barrier, and
that the phase field from tellurium- to mercury-rich conditions should be traversed slowly enough so that the cation vacancies
are not filled before the site transfer can be completed. 相似文献
13.
14.
D. H. Mao H. G. Robinson D. U. Bartholomew C. R. Helms 《Journal of Electronic Materials》1997,26(6):678-682
Simulations of current-voltage characteristics of ion-implanted n-on-p photodiodes have been performed using SemiCad Device.
In order to accurately simulate this device structure, several modifications to the simulator were implemented. These include
the modified carrier statistics to account for the nonparabolic band structure of HgCdTe, the correct physics parameters for
Shockley-Read-Hall, optical, and Auger recombination, and the Burstein-Moss shift for optical absorption important for heavily
doped n-type HgCdTe. With these and other improvements, SemiCad Device is calibrated with the measured ideal dark current
of an ion implanted diode and is used to simulate a source of non-ideal dark current from surface-charge induced band-to-band
tunneling. 相似文献
15.
Mode of arsenic incorporation in HgCdTe grown by MBE 总被引:5,自引:0,他引:5
S. Sivananthan P. S. Wijewarnasuriya F. Aqariden H. R. Vydyanath M. Zandian D. D. Edwall J. M. Arias 《Journal of Electronic Materials》1997,26(6):621-624
The results of arsenic incorporation in HgCdTe layers grown by molecular beam epitaxy (MBE) are reported. Obtained results
indicate that arsenic was successfully incorporated as acceptors in MBE-HgCdTe layers after a low temperature anneal. Secondary
ion mass spectrometry and Hall effect measurements confirm that arsenic is incorporated with an activation yield of up to
100%. This work confirms that arsenic can be used as an effective dopant of MBE-HgCdTe after a low temperature annealing under
Hg-saturated conditions. 相似文献
16.
P. Mitra Y. L. Tyan F. C. Case R. Starr M. B. Reine 《Journal of Electronic Materials》1996,25(8):1328-1335
Controlled and effective p-type doping is a key ingredient forin situ growth of high performance HgCdTe photodiode detectors. In this paper, we present a detailed study of p-type doping with
two arsenic precursors in metalorganic chemical vapor deposition (MOCVD) of HgCdTe. Doping results from a new precursortris-dimethylaminoarsenic (DMAAs), are reported and compared to those obtained from tertiarybutylarsine (TBAs). Excellent doping
control has been achieved using both precursors in the concentration range of 3 × 1015-5 × 1017 cm−3 which is sufficient for a wide variety of devices. Arsenic incorporation efficiency for the same growth temperature and partial
pressure is found to be higher with DMAAs than with TBAs. For doping levels up to 1 × 1017 cm−3, the alloy composition is not significantly affected by DMAAs. However, at higher doping levels, an increase in the x-value
is observed, possibly as a result of surface adduct formation of DMAAs dissociative products with dimethylcadmium. The activation
of the arsenic as acceptors is found to be in the 152–50% range for films grown with DMAAs following a stoichiometric anneal.
However, a site transfer anneal increases the acceptor activation to near 100%. Detailed temperature dependent Hall measurements
and modeling calculations show that two shallow acceptor levels are involved with ionization energies of 11.9 and 3.2 meV.
Overall, the data indicate that DMAAs results in more classically behaved acceptor doping. This is most likely because DMAAs
has a more favorable surface dissociation chemistry than TBAs. Long wavelength infrared photodiode arrays were fabricated
on P-on-n heterojunctions, grownin situ with iodine doping from ethyl iodide and arsenic from DMAAs on near lattice matched CdZnTe (100) substrates. At 77K, for
photodiodes with 10.1 and 11.1 (im cutoff wavelengths, the average (for 100 elements 60 × 60 μm2 in size) zero-bias resistance-area product, R0A are 434 and 130 ohm-cm2, respectively. Quantum efficiencies are ≥50% at 77K. These are the highest R0A data reported for MOCVDin situ grown photodiodes and are comparable to state-of-the-art LPE grown photodiodes processed and tested under identical conditions. 相似文献
17.
18.
Effect of dislocations on performance of LWIR HgCdTe photodiodes 总被引:2,自引:0,他引:2
The epitaxial growth of HgCdTe on alternative substrates has emerged as an enabling technology for the fabrication of large-area
infrared (IR) focal plane arrays (FPAs). One key technical issue is high dislocation densities in HgCdTe epilayers grown on
alternative substrates. This is particularly important with regards to the growth of HgCdTe on heteroepitaxial Si-based substrates,
which have a higher dislocation density than the bulk CdZnTe substrates typically used for epitaxial HgCdTe material growth.
In the paper a simple model of dislocations as cylindrical regions confined by surfaces with definite surface recombination
is proposed. Both radius of dislocations and its surface recombination velocity are determined by comparison of theoretical
predictions with carrier lifetime experimental data described by other authors. It is observed that the carrier lifetime depends
strongly on recombination velocity; whereas the dependence of the carrier lifetime on dislocation core radius is weaker. The
minority carrier lifetime is approximately inversely proportional to the dislocation density for densities higher than 105 cm−2. Below this value, the minority carrier lifetime does not change with dislocation density. The influence of dislocation density
on the R0A product of long wavelength infrared (LWIR) HgCdTe photodiodes is also discussed. It is also shown that parameters of dislocations
have a strong effect on the R0A product at temperature around 77 K in the range of dislocation density above 106 cm−2. The quantum efficiency is not a strong function of dislocation density. 相似文献
19.
γ射线辐照对中波HgCdTe光导器件性能的影响 总被引:5,自引:1,他引:4
对中波HgCdTe光电导器件用不同剂量的γ射线进行辐照,测量了其辐照前后的响应光谱、体电阻和响应率、探测率的变化,实验发现γ辐照使其峰值波长和截止波长向短波方向稍许移动;器件体电阻上升;而其响应率和探测率都有不同程度的改善。 相似文献