掺杂氧化锌晶须对工程塑料抗静电性的影响

采用新的铝掺杂方法,降低了氧化锌晶须电阻率,研究了铝掺杂对氧化锌晶须电阻率的影响。含20%掺量的氧化铝使氧化锌晶须的表面电阻率从107～108Ω降低到1.6×106Ω,体积电阻率从108～109Ω·cm降低到7.1×105Ω·cm;研究了掺杂氧化锌晶须对塑料抗静电性能的影响,铝掺杂氧化锌晶须的添加量为8%(质量分数),使环氧树脂的表面电阻率降低到7.2×1010Ω;铝掺杂氧化锌晶须的添加量为12%(质量分数),使聚苯硫醚的表面电阻率降低到2.0×1010Ω。     

掺杂氧化锌晶须的聚氨酯涂料抗静电性能研究

针对目前高分子抗静电材料制备过程中,存在因氧化锌晶须电阻率较高导致的氧化锌晶须添加量过大和抗静电效果较差等问题,采用新的铝掺杂方法,显著地降低了氧化锌晶须的本体电阻率,研究了铝掺杂对氧化锌晶须电阻率的影响。含20%掺量的氧化铝使氧化锌晶须的表面电阻率从107~108Ω.cm降低到1.6×106Ω.cm,体积电阻率从108~109Ω.cm降低到7.1×105Ω.cm;进一步研究了铝掺杂氧化锌晶须对聚氨酯涂料抗静电性能的影响,铝掺杂氧化锌晶须的添加量为8%,涂层的表面电阻率降低到2.4×107Ω.cm。铝掺杂氧化锌晶须可替代氧化锌晶须作为抗静电高分子复合材料的白色导电添加剂。     

铝掺杂氧化锌晶须/环氧树脂抗静电性能研究

采用新的铝掺杂方法,降低了氧化锌晶须的本体电阻率;研究了铝掺杂对氧化锌晶须电阻率的影响。含20%掺量的氧化铝使氧化锌晶须的表面电阻率从107~108Ω降低到1·6×106Ω,体积电阻率从108~109Ω·cm降低到7·1×105Ω·cm;研究了铝掺杂氧化锌晶须对环氧树脂抗静电性能的影响,铝掺杂氧化锌晶须的添加量为8%,使涂层的表面电阻降低到7·2×1010Ω。     

掺杂型ZnOw/纳米ZnO并用对PP性能的影响

研究了铝掺杂氧化锌晶须(ZnOw)和纳米ZnO对聚丙烯共混物力学性能和抗静电性能的影响.结果表明,铝掺杂氧化锌晶须能提高聚丙烯的冲击强度、拉伸强度和表面电阻率.纳米ZnO与掺杂氧化锌晶须并用能协同增强和增韧聚丙烯,纳米ZnO/掺杂氧化锌晶须/聚丙烯的质量比为2/16/82时,共混体系的综合力学性能较好.     

超细氧化锌改性制备高导电性粉末

以纤锌矿型氧化锌为原料,用后合成法制备了铝掺杂氧化锌导电粉末并在抗静电环氧树脂漆中应用,采用x-射线衍射（XRD）、扫描电镜（SEM）、化学分析等方法表征导电氧化锌的晶体结构、形貌和化学组成。结果表明,后合成法保持了氧化锌的纤锌矿结构,氧化锌的表面形貌发生了明显的变化。电阻测试结果表明白色氧化锌的电阻率从10Ω·cm降到了10^2Ω·cm,Al掺杂量和理论计算结果相符。抗静电应用结果表明,在氧化锌添加量为20％时,薄涂漆膜的表面电阻为10^6Ω。     

T-ZnOw在水性聚氨酯涂料中的应用研究

采用铝掺杂四针状氧化锌晶须作为功能性填料制备得到多功能水性聚氨酯涂料,其具有良好的抗静电性能、高耐磨性能以及优异的自清洁功能。采用硅烷偶联剂制备了分散性良好的晶须,并研究了晶须含量对涂层抗静电性能和耐磨性能的影响。当晶须含量为8%时,涂层的体积电阻率和表面电阻率分别从10~(15)Ω·cm和10~(16)Ω降低至10~7Ω·cm和10~7Ω,且涂层的磨耗量从22 mg降低至12 mg;此外,铝掺杂氧化锌晶须/聚氨酯涂层具有光催化功能和一定的自清洁功能。     

铝掺杂纳米氧化锌工艺的粒径控制研究

以均匀沉淀法作为纳米氧化锌铝掺杂的制备方法。通过正交试验,考察了铝离子掺杂量、煅烧温度等反应参数对纳米氧化锌粉体粒径的影响。结果表明:水解温度的影响最大,其次是煅烧时间,尿素配比和煅烧温度影响较小;最佳工艺为以OP-10做表面活性剂,锌离子浓度0.3 mol/L,水解时间4h,尿素与锌离子摩尔比为3,水解温度95℃,煅烧温度450℃,煅烧时间2 h,铝离子的最佳掺杂量(以锌离子的摩尔数为基准)5%。对铝掺杂纳米氧化锌进行了XRD、SEM粒径分析,结果表明掺杂效果良好,得到的铝掺杂纳米氧化锌粒径最小可达到20 nm。     

稀土钕掺杂氧化锌纳米材料的制备及对罗丹明B的降解研究

采用直接沉淀法对纳米氧化锌做稀土掺杂改性,制备了钕掺杂纳米氧化锌,并采用X射线衍射、扫描电子显微镜、固体荧光光谱等测试手段对产品做了分析与表征,考察掺杂对氧化锌的物相、晶体结构、荧光性质的影响,将其应用于废水中罗丹明B的光催化降解。结果表明：钕掺杂可大幅度提高纳米氧化锌在汞灯照射下的光催化性能。随着掺杂量增加,掺杂氧化锌纳米材料的光催化降解性能逐渐升高,掺加7%（物质的量分数）钕的纳米氧化锌对罗丹明B的去除率可达89.62%。     

ATO包覆纳米ZnO粉体的制备及表征

采用液相沉积法对纳米氧化锌进行表面包覆ATO改性,用自制粉体电阻测定仅对掺杂粉体导电性能进行测定,利用Zate电位测定仪考察包覆前后纳米ZnO在水体系中的分散稳定性,采用SEM、TEM对导电粉体进行分析.讨论了不同ATD掺杂量和煅烧温度对包覆粉体体积电阻率的影响.结果表明,ATO在氧化锌表面形成均匀的包覆层,最佳掺杂量30%左右,最佳煅烧温度约520℃,有效改变了氧化锌的等电点,提高了纳米氧化锌在水中的分散稳定性.     

掺杂对BaTiO3基PTC陶瓷材料性能的影响

概述了BaTiO3基PTC陶瓷半导化的掺杂种类和机理,综述了掺杂物的添加量和加入方式对BaTiO3基PTC陶瓷材料性能的影响,并展望了其发展趋势。通常BaTiO3陶瓷的电阻率在开始时都随施主掺杂浓度的增加而降低,当施主掺杂浓度达到某一值时,电阻率降至最低,而后随着施主掺杂浓度的提高,电阻率则迅速上升。随着受主掺杂含量的增加,材料的室温电阻率和升阻比逐渐增大,PTC性能逐步提高,当含量超过某一值时,升阻比又呈降低趋势,PTC效应有所降低,室温电阻率依然增大。由于各掺杂物的优缺点不同,近几年研究发现,双施主掺杂和施受主共掺能够很好的改善材料的性能。     

A Hybrid Photodiode for Solar Tracking Systems

Silicon - In this work, ruthenium doped ZnO based Al/ZnO:Ru/p-Si/Al diodes were fabricated to explain photoresponse behavior of metal oxide based Schototky diodes. The particle size of the doped...     

Optoelectronic performances on different structures of Al‐doped ZnO

ZnO films and Al‐doped ZnO (AZO) films were deposited on p‐Si substrate by magnetron sputtering to investigate its chemical composition, structural and photoelectric properties. XRD and FTIR show that Al ions can enter into the substitutional and interstitial site of ZnO crystal, and O atoms in AZO films are more abundant. Three different structures of Al‐doped ZnO (substitutional Al, interstitial Al, and O‐rich Al‐doped ZnO) were built using first‐principles method based on experimental results, charge density difference, and density of States (DOS) illustrate that there are strong ionic interactions between Al and O atoms in substitutional Al‐doped ZnO, moreover, substitutional and interstitial Al doping both are beneficial to N type, but oxygen‐enriched ZnO is not conducive to N type. Furthermore, the optical properties of 3 different Al‐doped ZnO structures were investigated respectively. Compared with pure ZnO, the real and imaginary part of dielectric function of O‐rich and interstitial Al have a significant increase and move to lower energy (red shift), the reflectivity of O‐rich is 3 times of pure ZnO and substitutional Al‐doped ZnO. The results are hoped to be helpful to study AZO thin film and predict the properties of Al‐doped ZnO.     

Microstructure of TiO2 and ZnO Films Fabricated by the Sol-Gel Method

Titanium dioxide and zinc oxide films were fabricated by spin-on and dip-coating methods. Both types of films exhibited columnar grains when the single coating was thin, ∼10 nm. The columnar TiO₂ films were dense, as confirmed by their density values calculated from the refractive index and TEM results. The addition of Al cations into the ZnO suppressed grain growth, because Zn had a lower diffusivity in the doped films. The doped ZnO films had nearly the same electrical resistivity as that of the undoped films.     

Experimental and Numerical Evaluation on Optical Properties of Al‐Doped ZnO Film Materials

The aim of this article is to provide a systematic method to perform numerical and experimental evaluation on the optical properties of Al‐doped ZnO nano thin films. Some different doping density samples are deposited for testing the transmittance. The results show that the transmittance of Al‐doped ZnO has a nonlinear relation with the optical constants and Al‐doped quantity. The optical band gap of the Al‐doped ZnO decreases with the Al doping quantity increasing. Meanwhile, the Maxwell‐Garnett (MG) theory is used to investigate the optical properties of Al‐doped ZnO nano thin films in visible range. The comparison can illustrate the validity of both test and design method. It implies a potential design and evaluation method for developing a new type of ceramic nano thin film in engineering.     

Effect of the Growth Parameters on Nonlinear Optical Properties of Al‐Doped ZnO Nano Films

The objective of this research work is to provide a systematic method to perform test and evaluation on the nonlinear optical properties of Al‐doped ZnO nano thin film structure for designing a high‐performance optical‐electronic structure. Some different kinds of samples can be manufactured for testing. The samples are designed by changing technical parameters such as sputtering power of Al and ZnO, pressure and sputtering time and each parameter has three levels. The test results show that the main factor is the sputtering power of Al, which means the doping density of Al. In the meantime, the Maxwell–Garnett theory is used to investigate the optical prosperities of Al‐doped ZnO nano thin films in the visible range. The optical band gap of Al‐doped ZnO nano thin films increases with the increasing of Al doping density, but it becomes slowly when the doping density is more than 16.0%. The results and the investigation method are useful for designing and manufacturing for nano thin films.     

Al掺杂量对ZnO多晶性能影响的研究

采用固相反应法制备了六方纤锌矿结构Zn1-xAlxO(0≤x≤0.005)系列多晶,探究了Al掺杂对ZnO多晶的微观形貌和热电输运性质的影响.Al掺杂促使ZnO晶粒长大联结,晶界减少,x=0.005时出现在晶界分布的ZnAl2O4尖晶石相.各组分样品经二次烧结后,电阻率均比对应组分的一次烧结样品增大1~2个数量级.掺杂后样品由ZnO的半导体行为转变为电阻率显著下降的金属行为,一次烧结样品在x=0.004有最小的室温电阻率~10 mΩ·cm,主要由于掺杂使样品载流子浓度和迁移率显著提高;300~950 K下掺杂样品热电势的绝对值和功率因子均随温度升高而增大,x=0.004时有最大的室温功率因子~0.11 mW/m·K2.综合得到ZnO中Al掺杂的饱和固溶度在0.004~0.005之间.     

Al掺杂对甲醇醇解法合成ZnO纳米粉体的影响

采用醇解法,在130℃的甲醇溶液中分别合成纯的和Al掺杂纳米氧化锌(ZnO)晶体.使用X射线衍射仪,透射电子显微镜,Fourier红外光谱和偏振稳态荧光光谱对其晶体结构和光学性能进行了表征.结果表明:在甲醇溶液中,在较低的温度(130℃)下,成功制备出纳米ZnO晶体.Fourier红外吸收光谱表明醇解法合成的ZnO纳米晶体含有较少的有机物杂质.荧光光谱结果可以看出,纯ZnO和Al掺杂的ZnO纳米晶体在可见光范围(400nm～700nm)内有一个高的蓝光发光带(峰位为440nm)和一个绿光发光带(纯的和Al掺杂的峰位分别为520nm和530nm).通过对比发现掺杂Al可以有效的改变ZnO纳米粉体的可见光发光特性.     

Al,Ni掺杂ZnO的电子结构与光学性质

利用基于密度泛函理论的第一性原理方法计算了纯ZnO和分别掺摩尔分数均为6.25%Al,Ni的ZnO的能带结构、电子态密度分布及光学性质。计算结果表明:ZnO掺杂Al,Ni后,其Fermi面均上移并进入导带;Zn0.9375Ni0.0625O的能带结构在导带底附近出现了4条杂质带。纯ZnO,Zn0.9375Al0.0625O和Zn0.9375Ni0.0625O的光学性质在低能处有较大的差异,其中Zn0.9375Al0.0625O在可见光区的吸收系数和反射率较之另外两种材料都相对较低,但三者的光学性质在高能处却非常相似。Zn0.9375Al0.0625O的吸收边有蓝移的趋势,而Zn0.9375Ni0.0625O的吸收边红移。掺杂Ni对ZnO的吸收系数等光学性质的改变更为明显。     

掺杂金属离子对纳米ZnO光催化活性的影响

采用沉淀法制备纳米ZnO催化剂,并通过掺杂金属离子的方法对其进行改性。以紫外光照下降解甲基橙溶液为探针反应评价其光催化活性。结果表明,掺杂5%的铝明显提高了ZnO光催化剂的活性,比商业生产的TiO2的光催化活性高很多。结合X射线粉末衍射(XRD)和扫描电子显微镜(SEM)表征结果,发现离子掺杂的ZnO光催化剂的催化性能与ZnO晶粒大小和掺杂离子的分散性有密切关系,即ZnO晶粒尺寸越小和掺杂离子的分散性越好,所制备的离子掺杂ZnO的光催化性能越高。