一种ADC前端无源差分抗混叠滤波器设计

高速数据采集系统中,信号采样必须满足奈奎斯特采样定理,否则将产生频率混叠现象,导致无法从采样信号中提取出原始信号。为了消除混叠现象对数据采集系统的影响,设计了一种5阶巴特沃斯型无源差分抗混叠滤波器,使用LTspice仿真软件对滤波器进行仿真,仿真结果表明,所设计滤波器在通带内衰减特性平坦。硬件实测结果显示,系统的无杂散动态范围（SFDR）为84.32d B,所设计的抗混叠滤波器可以有效消除信号混叠现象,并能保持较好的系统动态性能。     

一种分析和设计抗混叠滤波器的方法

信号采集通道中,一般采用高阶抗混叠滤波器来消除频率混叠现象,这同时也增加了滤波器设计难度。为有效降低滤波器设计的难度,在详细分析并讨论了抗混叠滤波器的陡度、阶数与信号抽样频率以及A/D转换器的分辨率之间的内在关系后,提出了抗混叠滤波器、抽样频率和A/D转换器三者之间合理权衡设计的方法。该分析方法为抗混叠滤波器乃至信号采集通道的设计提供了十分有益的参考。     

基于阻抗拟合法设计ADS6444前端抗混叠滤波器

本文介绍了4通道,14位模数转换器ADS6444的模拟输入特性,提出了一种借助拟合输入阻抗设计仿真ADS6444前端的抗混叠滤波器的方法。并通过对比此法和常用抗混叠滤波器设计方法的设计效果证明了此法具有一定的优越性。     

基于ΣΔ调制的Tetra基带前端设计

抗混叠滤波和模数转换器性能严重影响到后续接收机的数字处理。高分辨率A/D转换虽然可改善信号/量化噪声比,但也要求抗混叠滤波器有更低阻带衰减,致使其实现复杂、成本增加。在Tetra系统基带设计中,采用过采样ΣΔ调制可平衡高比特A/D转换与简单抗混叠滤波两者矛盾的要求。在分析ΣΔ调制的噪声整形基础上,针对Tetra系统要求,完成过采样3阶ΣΔ调制器及1/16降速抽取滤波器设计,MATLAB仿真验证了设计的正确和有效性,给出了相关的设计结果。     

利用内插法提高多相滤波器采样率的设计

在一些需要进行D／A(数字膜拟)变换的场合，常常需要提高数字信号的采样率以降低对模拟滤波器的要求。我们介绍的多项滤波器能工作在低的采样率下，而产生高采样率的信号，且保证结果不发生频谱混叠。文章最后介绍了一种已经集成了这种滤波器的芯片。     

过采样DFT滤波器组的一种简单设计方法

提出了一种几乎完全重构的过采样DFT调制滤波器组的设计方法.分析和综合滤波器组采用了不同的原型滤波器,使得设计自由度大为增加.考虑滤波器组的子带混叠、输出混叠、系统失真要求,推导并给出了相应的设计算法.实验结果证明提出的方法在相同滤波器长度情况下可以得到更好的阻带衰减.     

高速高精度ADC的驱动电路

本文分无源和有源抗混叠滤波电路两种情况,分析高速高精度数据采集系统对放大器驱动能力的要求,指出习惯上的无源抗混叠滤波器已难以满足精度要求和对放大器容性负载的驱动能力过于苛刻,有源抗混叠滤波器能够较好地满足驱动要求,但对放大器仍有较高的要求.     

用于改变图像大小的M带插值滤波器设计

改变图像尺寸是多速率系统的重要应用之一。提出了一种通过采样率转换改变图像尺寸的有效方法，给出了线性相位FIR插值滤波器和线性相位FIR抗混叠滤波器的设计算法。结合实例说明了方法的有效性。     

M带均匀最大抽取滤波器组

采用同时考虑幅度和延时特性的IIR型通用参数滤波器作为构件组成滤波器组,以单个滤波器特性相互叠加为基础,设计时使相邻滤波器在交界频率点满足一定条件,并对各过渡带区的组合特性施以优化和采取抗混叠、串话措施,便可做到以一定精度逼近于信号完全重构的滤波器组,是新的设计理论和方法。     

PCM语音编解码系统中抗混叠滤波器的设计

PCM（脉冲编码调制）是一种编码方式,它可以将语音信号转换成数字信号。我们知道在音频系统中经常会出现信号混叠,基于这个原因,本文介绍了一种在PCM语音编解码系统所使用的抗混叠滤波。它是一个有源的、低通三阶巴特沃兹滤波器。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.