Fat and hydration monitoring by abdominal bioimpedance analysis: data interpretation by hierarchical electrical modeling

In a previous publication, it was demonstrated that the abdominal subcutaneous fat layer thickness (SFL) is strongly correlated with the abdominal electrical impedance when measured with a transversal tetrapolar electrode arrangement. This article addresses the following questions: 1) To which extent do different abdominal compartments contribute to the impedance? 2) How does the hydration state of tissues affect the data? 3) Can hydration and fat content be assessed independently? For simulating the measured data a hierarchical electrical model was built. The abdomen was subdivided into three compartments (subcutaneous fat, muscle, mesentery). The true anatomical structure of the compartment boundaries was modeled using finite-element modeling (FEM). Each compartment is described by an electrical tissue model parameterized in physiological terms. Assuming the same percent change of the fat fraction in the mesentery and the SFL the model predicts a change of 1,24 omega/mm change of the SFL compared to 1,1 omega/mm measured. 42% of the change stem from the SFL, 56% from the mesentery and 2% from changes of fat within the muscle compartment. A 1% increase of the extracellular water in the muscle is not discernible from a 1% decrease of the SFL. The measured data reflect not only the SFL but also the visceral fat. The tetrapolar electrode arrangement allows the measurement of the abdominal fat content only if the hydration remains constant.     

Small-signal switch model of GaN HEMTs for MMIC applications

Gallium nitride (GaN) high electron mobility transistor (HEMT) with symmetrical structure as a control device is discussed in this paper. The equivalent circuit model is proposed on the basis of physical and electrical properties of the GaN HEMT device. A transistor with 0.5 μm gate length and 6 × 125 μm gate width is fabricated to verify the model, which can be treated as a single pole single throw (SPST) switch due to the ON state and OFF state. The measurement results show a good agreement with the simulation results, which demonstrates the effectiveness of the proposed model.     

Human Body Impedance for Electromagnetic Hazard Analysis in the VLF to MF Band

A knowledge of the average electrical impedance of the human body is essential for the analysis of electromagnetic hazards in the VLF to MF band. The purpose of our measurements was to determine the average body impedance of several human subjects as a function of frequency. Measurements were carried out with the subjects standing barefoot on a ground plane and touching various metal electrodes with the hand or index finger. The measured impedance includes the electrode polarization and skin impedances, spread impedance near the electrode, body impedance, stray capacitance between the body surface and ground, and inductance due to the body and grounding strap. These components are separated and simplifed equivalent circuits are presented for body impedance of humans exposed to free-space electromagnetic waves as well as in contact with large ungrounded metaltic objects therein.     

Highly Stretchable,Global, and Distributed Local Strain Sensing Line Using GaInSn Electrodes for Wearable Electronics

For identifying human or finger movement, it is necessary to sense subtle movements at multiple points, including the local strain and global deformation simultaneously; however, this has not yet been realized. Therefore, a highly stretchable, global, and distributed local strain sensing electrode made of GaInSn and polydimethylsiloxane is developed for wearable devices. To investigate the electrical properties of multiple sections of the GaInSn electrode when stretching, tensile, cyclic, and three‐point‐bending tests are performed. The results demonstrate that the electrode can withstand a strain up to 50% and has little hysteresis without any delay. Moreover, the distributed local strain and global strain can be simultaneously measured using just a single electrode line. Finally, a prototype of a data glove as an application of the strain sensing line is manufactured, and it is demonstrated that the folding state of fingers could be identified. The proposed technology may allow the creation of a lightweight master hand manipulator or 3D data entry device.     

Electromagnetic field measurements a millimeter wave linearaccelerator

Perturbational field strength measurements suitable for use on a proposed 120-GHz 50-MeV electron linear accelerator are described. The measurements are used to determine the R/Q of the device, where R is the shunt impedance. The perturbation is achieved by the use of hollow metallic cylinders with diameters ranging from 25 to 127 μm which are approximately 500 μm long. The cylinders were fabricated by sputtering aluminum through a shadow mask onto silica optical fibers as well as nylon surgical thread. The perturbational “form factors” for such a geometry are experimentally determined using a pillbox cavity. The measured values for the form factors are compared to theoretical estimations, which result in simple analytical expressions. The measured form factors are also compared to values calculated from a finite difference model of the perturbing object. The R/Q for various accelerating modes is measured on a 12-GHz model of the 120-GHz structure. Results are compared to predictions from a finite difference model of the accelerating structure     

密封铅蓄电池阻抗参数与荷电态

蓄电池的交流阻抗特性远比理想的单电极要复杂，不同类型的蓄电池的阻抗参数差别很大，其中有些参数有可能用于指示蓄电池的荷电态。密封铅蓄电池的荷电态在50%以上时，电池内阻几乎没有变化，但其电化学反应内阻与双层电容之积，却对荷电态很敏感。     

The effect of cladding layer thickness on large optical cavity650-nm lasers

The reduction in penetration of the optical mode into the cladding layers in large optical cavity (LOC) laser structures offers the possibility of reducing the cladding-layer thickness. This could be particularly beneficial in GaInP-AlGaInP high-power devices by reducing the thermal impedance and the electrical series resistance. We have designed and characterized 650-nm LOC lasers by modeling the optical loss due to incomplete confinement of the optical mode by the cladding layers and calculating the thermally activated leakage current. This indicated that the cladding thickness could be reduced to 0.5 μm without adversely affecting performance. We investigated devices with 0.3-, 0.5-, and 1-μm-wide cladding layers. The measured optical mode loss of the 0.3-μm-wide cladding device was 36.2 cm^-1 compared with 12.4 and 11.3 cm^-1 for the 0.5- and 1-μm-wide cladding samples, respectively. The threshold current densities of the 0.5- and 1.0-μm devices were similar over the temperature range investigated (120-320 K), whereas the 0.3-μm devices had significantly higher threshold current density. We show that this can be attributed to the higher optical loss and increased leakage current through the thin cladding layer. The intrinsic gain characteristics were the same in all the devices, irrespective of the cladding-layer thickness. The measured thermal impedance of 2-mm-long devices was reduced from 30.7 to 22.3 K/W by reducing the cladding thickness from 1 to 0.5 μm. Our results show that this can be achieved without detriment to the threshold characteristics     

Pseudomorphic InP HEMTs with dry-etched source vias having 190 mWoutput power and 40% PAE at V-band

We report state-of-the-art V-band power performance of 0.15-μm gate length InGaAs/InAlAs/InP HEMT's which have 15 μm×23 μm dry-etched through-substrate source vias (substrate thickness 50 μm). The 500-μm wide InP HEMT's were measured in fixture at 60 GHz and demonstrated an output power of 190 mW with 40% power-added efficiency (PAE) and 6.8 dB power gain at an input power of 16 dBm. These results represent the best combination of power and PAE reported to date at this frequency for any solid state device. The results are achieved through optimization of the InP-based heterostructure which incorporates a graded pseudomorphic InGaAs channel and a graded pseudomorphic InAlAs Schottky barrier layer, and the use of 15 μm×23 μm dry-etched through-substrate source vias     

Fabrication of device for detecting gases using conductivitychanges of electrodeposited Bu4NNi(dmit)2 thinfilms

The fabrication and development of a thin film solid state device for the room temperature detection of sulphur dioxide and nitric oxide is described. Thin films of Bu₄NNi(dmit)₂ were electrodeposited onto a gold interdigitated electrode system and changes in the electrical resistances of the films on exposure to the test gases were monitored. The absorption kinetics followed the Elovich isotherm     

基于EIS的飞机复合材料异常检测技术研究

先进复合材料在飞机上应用的越来越多,随着其服役时间的增长可能会出现异常,为保证飞行安全,需对飞机的复合材料构件进行必要的异常检测。该文将电阻抗谱法应用于飞机复合材料构件的异常检测。制作了同面双电极传感器和两块碳纤维复合材料试样,并设计了实验电路。采用双电极测量法测量了2个碳纤维被测样本的电阻抗谱,在Matlab中绘出了电阻抗谱图,并进行了对比分析。初步的实验结果表明,通过对复合材料构件电阻抗谱的测量能识别出其异常,将电阻抗谱测量用于飞机复合材料构件的异常检测是可行的。     

Use of impedance ratio for the continuous measurement of strokevolume of a valveless pouch used as a cardiac-assist device

A technique is described for measuring the volume of a valveless compressible plastic pouch and its volume change when used as a cardiac-assist device. The method employs measuring the pouch impedance at high frequency with sleeve electrodes at both ends of the pouch. The use of an adequately high frequency eliminates the electrode impedance and the impedance measured is that of the resistance of the electrolyte in the pouch. By equating the compressible pouch to two truncated cones with their bases adjacent, an equation is derived that relates pouch impedance to volume. It is shown that by plotting the stroke volume ejected (delta V) versus the ratio of systolic (RS) to diastolic (Rd) impedance, the resulting relationship is independent of the resistivity of the fluid in the pouch. Validation tests were made with a 100 mL pouch filled with solutions having resistivities of 60, 102, 145, and 192 omega-cm. The method described herein permits calibration of the volume change of a valveless pouch used as a circulatory-assist device and in use the calibration will not be affected by a change in packed-cell volume which changes resistivity.     

Electrical characterization of single cell in microfluidic device

This paper introduces a study of single cell in a microfluidic device constructed from polydimethylsiloxane (PDMS) using micro-electro-mechanical-system (MEMS) technology, used to measure the characterization of single cell under liquid medium. The microfluidic device combines a microfluidic structure to capture single cell level and a coplanar waveguide electrode inside a channel to measure the impedance of a single HeLa cell (human cervical epithelioid carcinoma). The electrical characterization of a single cell is demonstrated using a two-port vector network analyzer (VNA) in the frequency range of 1 MHz-1 GHz. The validity of the electrical equivalent model in this study is asserted through measurements of cell impedance in phosphate buffer solution (PBS) liquid, as well as electrical simulations of a single HeLa cell experiment compared with measurements.     

Quantum interference control of electrical currents in GaAs

In an earlier publication, preliminary observations of the generation of electrical currents were reported in GaAs and low-temperature-grown GaAs (LT-GaAs) at 295 K using quantum interference control of single- and two-photon band-band absorption of 1.55- and 0.775-μm ultrashort optical pulses. Time-integrated currents were measured via charge collection in a metal-semiconductor-metal (MSM) electrode structure. Here we present detailed characteristics of this novel effect in terms of a simple circuit model for the MSM device and show how the injected current depends on MSM parameters as well as optical coherence, power, and polarization. For picosecond pulse excitation with peak irradiance of only 30 MW/cm^-2 (1.55 μm) and 9 kW/cm^-2 (0.775 μm), peak current densities of ~10 A/cm^-2 at peak carrier densities of 10¹⁵ cm ^-3 are inferred from the steady-state signals. This compares with 50 A/cm^-2 predicted theoretically; the discrepancy mainly reflects inefficient charge collection at the MSM electrodes     

A comparison of power requirements of traveling-wave LiNbO3optical couplers and inteferometric modulators

It is shown that a coupler and interferometer may be considered two extremes of a generalized two-guide coupler device in which electrode length is less than a coupling length. For electrode lengths less than half of a coupling length, the generalized device looks more like an interferometer than a coupler. The impedance and electrical loss of asymmetric-stripe and coplanar-waveguide transmission lines on LiNbO3for thick as well as thin electrodes are then presented. The effects of the electrical loss on the bandwidth and drive requirements of traveling-wave LiNbO3couplers and interferometric devices are discussed, and it is shown that electrical loss in the transmission line is more detrimental to a coupler than to an interferometer. These results are then used to compare the drive power requirements of coupler and interferometric devices, and it is shown that for the same bandwidth and same optical guide dimensions, an interferometric device with a coplanar transmission line can require a lower drive power than a coupler with an asymmetric-stripe line.     

Chronic neural stimulation with thin-film, iridium oxide electrodes

Experiments were conducted to assess the effect of chronic stimulation on the electrical properties of the electrode-tissue system, as measured using electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV). Silicon, micromachined probes with multiple iridium oxide stimulating electrodes (400-1600 micron 2) were implanted in guinea pig cortex. A 10-17 day post-operative recovery period was followed by five days of monopolar stimulation, two hours/electrode each day using biphasic, constant current stimulation (5-100 microA, 100 microseconds/phase). EIS and CV data were taken before and after stimulation. The post-stimulation impedance [at mid-range frequencies (100 Hz-100 kHz)] consistently and significantly decreased relative to prestimulation levels. Impedance magnitude increased permanently at low frequencies (< 100 Hz), correlating to a change in the charge storage capacity (the area under a cyclic voltammagram). Impedance magnitude significantly increased during the recovery period, though this increase could be mostly reversed by applying small currents. A mathematical model of the electrode-tissue system impedance was used to analyze in vivo behavior. The data and modeling results shows that applying charge to the electrode can consistently reduce the impedance of the electrode-tissue system. Analysis of explanted probes suggests that the interaction between the tissue and electrode is dependent on whether chronic pulses were applied. It is hypothesized that the interface between the tissue and metal is altered by current pulsing, resulting in a temporary impedance shift.     

Si/SiGe digital optoelectronic switch

The physical parameters and functional characteristics of a Si/SiGe digital optoelectronic switch are reported. The device is found to have bistable electrical states: a high-impedance (40 kΩ) OFF state connected to a low-impedance (100 Ω) ON state by a regime of negative differential resistance. The switching voltage and holding voltage are measured to be 2.6 and 1.3 V, respectively, and the switching current and holding current are measured to be 500 μA and 1 mA, respectively. These DC characteristics are found to be similar to those measured in double heterostructure optoelectronic switching devices manifested in the AlGaAs/GaAs materials system. The DC characteristics of this Si/SiGe digital optoelectronic switch are also found to be sensitive to optical input and temperature     

Finite element modeling of electrode-skin contact impedance inelectrical impedance tomography

In electrical impedance tomography (EIT), the measured voltages are sensitive to electrode-skin contact impedance because the contact impedance and the current density through it are both high. Large electrodes were used to provide a more uniform current distribution and reduce the contact impedance. A large electrode differs from a point electrode in that it has shunting and edge effects that cannot be modeled by a single resistor. The finite-element method (FEM) was used to study the electric field distributions underneath an electrode, and three models were developed: a FEM model, a simplified FEM model, and a weighted load model. The FEM models considered both shunting and edge effects and closely matched the experimental measurements. It is concluded that FEM models of electrodes can be used to improve the performance of an electrical impedance tomography reconstruction algorithm     

基于FPGA的胃起搏装置设计

本文主要介绍一种基于FPGA的胃起搏装置设计,该设计集"检测-刺激-反馈"于一体。胃运动状态可以随着外界的刺激变化而变化类似于谐振,因此采用胃起搏装置可以有效的改善胃动力异常的现象。本设计通对胃电信号和胃阻抗信号的检测和分析,产生相应的刺激信号来引导胃的运动,使它趋于正常状态,并且对刺激效果进行时时反馈,调节刺激参数,从而实现智能化跟踪治疗。     

Electrode polarization impedance in weak NaCl aqueous solutions

In this paper, we characterize the polarization impedance behavior of several common metals in diluted NaCl solution operated at low current densities. The objective was to provide a useful reference for those wishing to calculate the electrode polarization impedance in diluted NaCl solutions. Serial equivalent resistance (R) and capacitance (C) for silver, aluminum, gold, platinum, and medical stainless-steel were measured as a function of frequency (10(-2)-10(3) Hz) and NaCl concentration (2.4-77.0 mmol/L). The ratio of electrode polarization impedance with respect to the bulk resistance was calculated and plotted against concentration for each metal. Such a ratio shows the effect of the electrode polarization contribution as a function of electrolyte concentration when the bulk resistance of the solution changes. All metals showed a decrease of serial resistance Rp and capacitance Cp as a function of frequency. The medical stainless-steel electrode showed largest impedance values at lower frequencies compared to the other electrodes, and was concentration independent at all frequencies. Aluminum had smallest polarization impedance at low frequencies. Pure gold and platinum behaved similar with the exception that the serial resistance for gold showed a lower value at higher frequencies.     

生物组织阻抗温度特性测试系统的研究

肿瘤热疗过程中的温度检测和控制是热疗的关键,但温度的无损检测方法较为缺乏,限制了其发展。文中研究了一种装置测试生物组织电阻抗的温度特性,为基于电阻抗特性的温度无损检测技术提供依据。该装置利用恒温水循环原理对组织进行加热,可使组织受热均匀并且温度易于控制,阻抗测量装置采用四电极法原理,可有效消除接触阻抗和极化效应的影响,提高测量精度。文中还研究设计了用于激励的恒流源发生电路,恒流源的输出阻抗在频率为1 MHz时为212 kΩ,具有很好的恒流特性。基于此系统,对两组新鲜肥肉组织进行了测试,研究了其电阻抗温度特性及频率特性,测试结果表明,离体肥肉组织电阻抗实部随频率升高而降低,虚部先降低后升高,转折频率在80~120k Hz之间;其温度特性表现为：小于53℃时,组织电阻抗随着温度升高呈现较为缓慢下降的趋势,在53~59℃之间,电阻抗以及电阻抗变化系数形成一个突变,表现出组织电阻抗变化的临界特性,这为进一步进行肿瘤热疗过程中基于电阻抗技术的温度无损监控提供了理论和实验依据。