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基于STM的多模式扫描探针显微镜的建立 总被引:5,自引:2,他引:3
在已有的扫描隧道显微镜(STM)基础上设计了一套集STM、 光子扫描隧道显微镜(PSTM)、近场扫描光学显微镜(NSOM)、扫描近场声学显微镜(SNAM)为一体的多模式扫描探针显微系统(SPM)。系统的4种模式可通过转换开关方便地切 换,探头的更换也很容易。利用本系统对典型样品进行了扫描成像。测试表明,系统具有良好的稳定性和超高分辨率。 相似文献
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CHI900扫描电化学显微镜自带的软件不能直接将实验数据或者面扫描图形转换为三维扫描图形,由此提出了基于VC和Matlab混合编程的图形处理软件,实现了三维图形的转换,利用小波阈值对实验曲线降噪,取得了较好的处理效果。 相似文献
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扫描离子电导显微镜技术是在纳米尺度进行非导电的生物样品成像的一种新型扫描探针显微镜技术。通过成功制备扫描离子电导显微镜扫描探测用纳米尺度玻璃微探针,对其进行了功能性评估;而后通过绘制探针-样品接近曲线,阐述了扫描离子电导显微镜技术实现非接触高分辨率探测的工作原理;最后采用该显微镜技术对导电标准样品及活体肾上皮A6细胞进行了表面形貌扫描成像,并与A6细胞表面形貌的扫描电镜图像进行了对照。结果表明,扫描离子电导显微镜技术不仅可实现导电样品的扫描成像,而且适宜于在生理条件下、非接触式地研究活体细胞表面的三维形貌,从而为人们深入研究细胞表面微观结构与生理功能提供了全新的技术手段。 相似文献
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原生动物扫描电镜样品制备方法的探讨 总被引:11,自引:0,他引:11
以腹毛目纤毛虫棘尾虫、尖毛虫和游仆虫,膜口目纤毛虫草履虫以及腰鞭目鞭毛目角藻为材料,对原生动物扫描电镜样品制备方法作了探讨,提出了样品制备过程中取材固定、脱水、干燥后原生动物在样品台上的定位等值得注意的问题,取得成功的关键及一些体会。 相似文献
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《Mechatronics》2015
A macro-scale atomic force microscope (macro-AFM) has been designed and used for teaching precision mechatronics. The macro-AFM uses a novel electromagnetic self-sensing self-actuating probe. It operates in frequency-modulation AFM (FM-AFM) mode with intermittent contact. The AFM has an imaging volume of 250 mm × 40 mm × 1 mm with a resolution of about 1 μm at 1 Hz measurement bandwidth. The macro-AFM is simple and relatively inexpensive to build. It is scaled to make motion visible to the eye and is robust for a lab environment, all of which make it an affordable and effective educational tool. The macro-AFM is used in Mechatronics (2.737), a graduate level course at MIT, where in a series of 11 laboratory exercises, the students assembled and programmed the AFM system. This article provides the design and theory used for making and controlling the macro-AFM, as well as experimental results. 相似文献
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T. Clarysse G. Brammertz D. Vanhaeren P. Eyben J. Goossens F. Clemente M. Meuris W. Vandervorst R. Srnanek R. Kinder B. Sciana D. Radziewicz Zhiqiang Li 《Materials Science in Semiconductor Processing》2008,11(5-6):259
As CMOS is approaching the 22 nm node, the importance of high-mobility materials such as Ge and GaAs is rapidly increasing. For the timely development of these new technologies accurate dopant and carrier-profiling solutions for source-drain extensions with these materials are required. Identical n-type-doped (Si, Se) layers on same and opposite type medium-doped layers on S.I. GaAs substrates will be investigated, with layer thicknesses ranging from 200 down to 50 nm and doping concentration levels up to 1e20 at/cm3. In this work, secondary ion mass spectrometry will be used for dopant profiling. For GaAs carrier profiling, conventional spreading resistance probe, as commonly used in Si-CMOS, fails. Hence, reliable alternatives need to be found for characterizing these high–low structures. Techniques to be discussed range from the more conventional approaches such as Hall or electrochemical capacitance–voltage (performed by different laboratories), over micro-Raman spectroscopy and photo-luminescence along a beveled surface, up to more advanced approaches using scanning spreading resistance microscopy. 相似文献
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The atomic scale ordering and properties of cubic silicon carbide surfaces are investigated by room and high-temperature scanning tunneling microscopy. In this review, we will focus on the Si-terminated β-SiC(100) surfaces only. Self-formation of Si atomic lines and dimer vacancy chains on the β-SiC(100) surface is taking place at the phase transition between the 3×2 (Si-rich) and c(4×2) surface reconstructions. Using a rigorous protocol in surface preparation, it is possible to build very long, very straight and defect free Si atomic lines, forming a very large superlattice of massively parallel lines. These self-organized atomic lines are driven by stress. They have unprecedented characteristics with the highest thermal stability ever achieved for nanostructures on a surface (900 °C) and the longest atomic lines ever built on a surface (micrometer scale long). Investigating their dynamics, we learn that their dismantling at high-temperature results from collective and individual mechanisms including one-by-one dimer removal. Overall, this is a model system especially suitable for nanophysics and nanotechnologies. 相似文献
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Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10–11) V-defect facets have been experimentally analyzed using various surface sensitive techniques including spectroscopy and microscopy. Moreover, the effect of sub-band gap (of the barrier layer) illumination on contact potential difference (VCPD) and the role of oxygen chemisorption have been studied. 相似文献
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In this work, an aqueous acidic thin‐layer‐based strategy for fabricating nanostructures on silicon by using atomic force microscopy (AFM) nanolithography is presented. The approach involves the formation of microscale droplets via dilute hydrofluoride (DHF) etching, the conversion of the droplets to acidic thin layers by AFM‐probe scanning, and subsequent lithographic operations using a biased probe in the aqueous layers. By varying the concentration of the acidic DHF layers, the thin layers can facilitate the creation of both positive and negative patterns, such as oxide dots and Si pores, through anodic oxidation and dissolution. In particular, the anodic oxidation in the acidic media is associated with the field‐enhanced nonequilibrium dissociation of the weak electrolyte. The Si pore structure formation is related to the field‐assisted dissolution of anodic oxides and the Si substrate. The acidic‐layer‐based technique allows switching between different lithographic modes by changing the acidity of the DHF layers, and is complementary to bulk solution‐based and local meniscus‐based approaches in AFM nanolithography. In principle, this method can also be extended to other materials that have similar reactions with DHF. 相似文献
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In the present work, a brief overview is given on how to apply transmission (TEM) as well as scanning electron microscopy (SEM) and their related techniques (electron diffraction, energy-dispersive X-ray spectrometry, electron energy-loss spectroscopy, electron holography; electron backscatter diffraction, electron-beam-induced current, cathodoluminescence) for the analysis of interfaces between individual layers or extended structural defects in a thin-film stack. All examples given in the present work were recorded on Cu(In, Ga)Se2 thin film solar cells, however, the shown experimental approaches may be used on any similar thin-film semiconductor device. A particular aspect is the application of various techniques on the same identical specimen area, in order to enhance the insight into structural, compositional, and electrical properties. For (aberration-corrected) TEM, the spatial resolutions of such measurements can be as low as on the subnanometer scale. However, when dealing with semiconductor devices, it is often necessary to characterize electrical and optoelectronic properties at larger scales, of few 10 nm up to even mm, for which SEM is more appropriate. At the same time, these larger scales provide also enhanced statistics of the analysis. In the present review, it is also outlined how to apply SEM techniques in combination with scanning-probe and optical microscopy, on the same identical positions. Altogether, a multiscale toolbox is provided for the thorough analysis of structure-property relationships in thin-film solar cells using correlative microscopy approaches. 相似文献
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D. M. Schaadt E. T. Yu S. Sankar A. E. Berkowitz 《Journal of Electronic Materials》2000,29(11):1299-1303
We have used scanning force microscopy to study localized charge injection and subsequent charge transport in discontinuous
Co/SiO2 multilayer structures. Charge was injected by applying a bias voltage pulse between a conductive proximal probe tip and the
sample. Electrostatic force microscopy was used to image charged areas, to determine quantitatively the amount of stored charge,
and to characterize charge transport. Charge was deposited controllably and reproducibly within areas ∼20–50 nm in radius
and an exponential decay in the peak charge was observed. The decay times were observed to be dependent on the nominal Co
film thickness and on the sign of the deposited charge, with longer decay times for positive charge than for negative charge.
These results are interpreted as a consequence of Coulomb-blockade effects, considering charge transport both within the Co
layer as well as from the Co layer into the Si substrate. 相似文献
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一种新型的STM探针 总被引:2,自引:0,他引:2
以普通的石英光纤为材料,用熔拉腐蚀复合的方法制备出nm量级的光纤探针,而后在针尖表面镀上数十nm厚的金属膜,达到导电性,使其能传导隧道电流,从而研制出一种新型的扫描隧道显微镜(STM)光纤隧道探针,在STM上取得了比较理想的实验结果。本文将光纤隧道探针与金属隧道探针作了比较,并对其性能作了分析。 相似文献