基于150 MeV电子束的光中子特性模拟分析

高能中子源是研究高能太空宇宙射线中子对人体和电子仪器辐射损伤的必备装置,基于高能电子加速器的光中子源是目前能够提供较高能量白光中子的方式之一。本工作以清华大学先进加速器实验室的激光电子加速器束流参数为基础,借助Geant4对产生的光中子的能量特性、产额特性、角分布特性、时间特性进行了分析。模拟结果表明,Φ2 cm×2 cm的圆柱体Ta靶时,150 MeV电子束流可产生最高能量约为110 MeV、中子产额约为1.2×10~5n/10~7e-、出射时间在0~100 ns之间呈负指数分布的几乎各向同性的光中子。根据拟合的中子能量-出射时间离散指数函数,估算得到对产生的1~100MeV中子,在飞行距离为5m时中子飞行时间的时间分辨率好于2.23%。本工作为该加速器的光中子产生和实验测量工作提供了参考依据。     

铍中氟的14 MeV中子活化分析

利用14MeV中子与氟的核反应~(19)F(n,p)~(19)O,测定金属铍中的杂质氟的含量,在中子产额为2×10~(10)n/s,样品重量平均4g,探测限0.1mg,铍中氟含量1000～5000ppm时,多次测量的平均值标准偏差为±2～4%,活化分析的结果与化学分析结果相差约5～15%。     

厚铍靶9Be(d,n)反应中子产额测量

能量在3MeV以下厚靶D-Be反应的中子产额实验数据至关重要,但较为缺乏。本工作在北京大学4.5MV静电加速器上对氘束轰击厚铍靶的中子产额进行测量。对入射氘核能量在0.35~2MeV之间的若干能量点用长中子计数管进行了0°方向中子产额、中子角分布及中子总产额的测量。与已有的测量结果和经验公式进行了比较,并拟合出氘束轰击厚铍靶中子总产额的经验公式。     

AB-BNCT中子靶物理设计分析

质子加速器适用于为硼中子俘获治疗提供中子源,其中子源强及能谱较反应堆中子源更具可调性。中子靶物理计算分析是加速器中子源设计的基础,为其提供粒子能量、流强等参数需求分析,并为靶体结构尺寸设计、中子慢化和屏蔽分析等提供前端参数。本文利用MCNPX蒙特卡罗程序,通过对质子打靶的中子产额和能谱、靶体能量沉积、打靶后靶材放射性活度和中子出射空间角分布等进行研究,提出能量2.5 MeV质子轰击100～200μm锂靶的设计,并用模拟计算数据论证其合理性。该设计中子源在1 mA流强质子轰击下,源强可达9.74×10~(11) s~(-1);拟设计15 mA、2.5 MeV质子束产生的中子源,在治疗过程中靶材放射性活度累积最大值约为1.44×10~(13) Bq。     

陶瓷中子管

本文介绍了一种采用陶瓷绝缘外壳和自持靶的陶瓷中子管。D-T反应中子产额可大于10~9ns~(-1),D-D反应中子产额可大于10~7ns~(-1)。使用寿命已超过500h。     

用阈探测器活化法测量50MeV/u重离子实验靶区的中子注量率、能谱和中子产额

用阈探测器中子活化法测量了50MeV/u ~(12)C离子实验靶区的次级中子平均注量率、角分布、粗略能谱,并估算了重离子反应的中子产额。     

不加载体分离^126Sn的方法研究

~(126)Sn是一长寿命裂变产物核素,它在不同裂变体系中都有不可忽略的裂变产额,如~(235)U热中子裂变产额为5.59×10~(-2)％,快中子裂变产额为1.39×10~(-1)％,高能中子裂变产额为1.76％。在高放废液处理处置研究中,对~(126)Sn需予以考虑。     

用于单粒子效应辐照实验的CYCIAE-100白光中子源研究

中子诱发单粒子效应会影响航空飞行器和地面核设施用电子器件的可靠性。基于质子加速器打靶产生的白光中子束是研究电子器件中子单粒子效应的重要中子源。通过开展辐照实验获取器件中子单粒子效应截面或阈值等信息,能够预测器件在中子辐射环境中的失效率,并为有针对性抗辐射加固提供数据支撑。中国原子能科学研究院100 MeV质子回旋加速器(CYCIAE-100)通过质子轰击W靶发生散裂反应可以产生具有连续能量的白光中子。本文基于核反应理论,采用蒙特卡罗方法模拟了100 MeV质子与W靶相互作用产生的中子的产额、能谱和角分布,模拟结果表明,平均1个100 MeV质子可以产生0.33个中子;中子能量范围为0～100 MeV,且随着能量的增加中子注量先增加后减小,峰值在1 MeV附近;沿质子束方向中子角分布具有轴对称性,且随着出射角的增加,中子注量先减小后增加,在90°时,中子注量最小。选取0°出射方向的中子束开展单粒子效应实验,采用基于双液闪探测器的中子飞行时间法测量白光中子能谱,获得了能量范围为3～100 MeV的中子能谱,且当质子束为100 MeV/1μA时,在距离W靶15 m处的中子注量率为3.3×10...     

高通量堆辐照二氧化钍中~(233)U,~(232)U,~(233)Pa及裂变产物的积累与中子积分通量的关系

本文研究了在高通量堆上辐照ThO_2,在一定的中子能谱下,中子积分通量的变化(3.499×10~(20)-1.759×10~(21))对~(233)U产额、~(232)U/~(233)U比及裂变产物积累的影响。     

基于加速器~7Li(p,n)反应的硼中子俘获治疗中子源的优化设计

7Li(p,n)反应以中子产额大、反应阈能低等优点成为硼中子俘获治疗加速器驱动中子源所用中子反应的候选类型之一。本文重点研究了该中子产生反应作为加速器驱动中子源的中子产额及其能谱特性,并对产生的高能中子束流进行慢化,使其满足BNCT治疗要求。首先采用蒙特卡罗程序MCNPX2.5.0模拟加速器7Li(p,n)反应过程,得到1.9 3.0 MeV能量入射质子的中子产额及其能谱,并详细研究了质子入射能量为2.5 MeV的最佳条件下产生的中子束流特性;进而提出中子束流的慢化设计方案,并对慢化所得超热中子束品质进行分析研究。模拟计算结果表明,10 mA流量的2.5 MeV能量入射质子所产生的中子束经过慢化处理后,可以很好地满足硼中子俘获治疗的中子束流要求。     

氘化闪烁体的光响应

在迴旋加速器上利用D(d,n)~3He反应和~9Be(d,n)~(10)B反应产生的中子,采用双参数方法测量NE-230和NE-232氘化闪烁体对氘以及国产的ST-451闪烁体对质子的光响应曲线,所测的实验值用二次多项式拟合。对其它性能也作了相对比较。     

金刚石中子探测器稳定性和探测效率测试

介绍了金刚石中子探测器主要性能的测试方法。采用14 MeV氘氚中子测试了金刚石中子探测器的稳定性和探测效率,实验结果表明探测器性能稳定,中子探测效率ε_E=8.00×10~(-5)(±9.38%)counts/n·cm~2。SuperMC蒙卡软件对探测效率进行模拟计算,计算结果ε_C=8.69×10~(-5)(±3%)counts/n·cm~2,不确定度范围内认为二者一致。     

放射性核束17N轰击9Be和197Au靶的中子发射

用飞行时间技术测得33.4MeV/u     

Calculation of Response Function for Bonner Sphere Spectrometer Based on Geant4

In order to make further studies on fusion neutron diagnosis on HL-2A /HL-2M,we have developed and succeeded in the calculation of the Response Function for a Bonner sphere spectrometer,which consists of eight polyethylene spheres with ³He proportional counters inside.The response function of the Bonner spectrometer to neutrons is of fundamental importance for its neutron spectrum unfolding procedure and is directly related to the quality of the unfolded spectrum.In this paper,we calculated the response function to neutrons from 10-9 MeV to100 MeV by Geant4.In order to test the accuracy of the Geant4 simulation,we apply it to measure an ²⁴¹Am-Be neutron source,and the measured neutron counts of the spectrometer and simulated counts are found to be highly consistent,with a relative error up to 9.3%.This has proven the calculation of the neutron response of the Bonner sphere spectrometer by Geant4 to be quite accurate.     

Development and performance characterization of a compact plasma focus based portable fast neutron generator

The design details and performance characterization results of a newly developed plasma focus based compact and portable system (0.5 m × 0.5 m × 1.2 m, weighing ≈100 kg) that produces an average neutron yield of ~2 × 10⁸ neutrons/shot (of fast D-D neutrons with typical energy ~2.45 MeV) at ~1.8 kJ energy discharge are reported. From the detailed analysis of the experimental characterization and simulation results of this system, it has been conclusively revealed that specifically in plasma focus devices with larger static inductance: (i) pinch current is a reliable and more valid neutron yield scaling parameter than peak current, (ii) the ratio of pinch/peak current improves as static inductance of the system reduces, (iii) the benign role of the higher static/pinch inductance ratio enables the supply of inductively stored energy in densely pinched plasma with a larger time constant and it is well depicted by the extended dip observed in the discharge current trace, (iv) there is the need to redefine existing index values of the pinch (Ipinch ^4.7) and peak (Ipeak ^3.9) currents in neutron yield scaling equations to higher values.     

用金活化法测定加速器中子源中子注量及MCNP4C修正

在四川大学720所2.5MeV静电质子加速器上,由核反应7Li(p,n)7Be,T(p,n)3He产生中子,对中国工程物理研究院研制的新型中子探测器进行效率刻度实验中,需要知道探测器位置处的中子绝对注量,为此我们测量了0.165、0.352、0.576、1.400MeV四个能点的中子注量。测量方法采用的是金活化法,在实验测量中,由靶头材料、冷却水层和样品的包层材料等引起的多次散射效应及中子在样品中的自屏蔽效应等均对实验结果产生影响。这些因素在实验中不可避免,也难以通过实验方法扣除,因此用Monte Carlo程序MCNP4C对上述效应进行了修正计算。     

Theoretical and Experimental Determinations of Neutron Energy Deposition in Silicon

Theoretical calculations have been made of the energy deposited in silicon in ionization and elastic interactions by neutrons in the energy range of 60 keV to 15 MeV. In contrast to earlier determinations, care was taken to calculate accurately the effects of atomic recoils. These are of primary importance for permanent effects in silicon at all neutron energies and account for about 30% of the transient ionization at 14 MeV. To test the calculation of the energy deposited by 14 MeV neutrons, experiments were performed with a pulsed d-t generator. The experimental values in rads per unit fluence were (11 ± 2) × 10-10 rad-cm2 for special p-n junctions and (8 ± 2) × 10-10 rad-cm2 for power transistors. Both experimental values agree, withi jerror, with the calculated value of (8 ± 1) × 10-10 rad-cm2. The calculated variation of radiation damage in silicon with neutron energy was compared with existing experimental data. There is general agreement of theory with experiment from 200 keV to 14 MeV.     

用4.5MV静电加速器开展快中子照相的研究

用国产原材料研制了一种适用于快中子照相的关键部件——快中子转换屏。利用⁹Be(d，n)反应在北京大学4.5MV静电加速器上产生低于7MeV能区的快中子，采用胶片成像法进行了快中子照相的初步实验。借助带不同孔径的Fe等不同材料制作的不同厚度的试验样品，对快中子胶片成像法的基本性能进行了初步测试和研究。实验结果表明，研制的快中子转换屏能够满足快中子照相的需要。     

Radiation Effects on GaAs Charge Coupled Devices with High Resistivity Gate Structures

The results of a study on the effects of 1 MeV electrons and 1 MeV neutrons on the operation of high speed GaAs Charge Coupled Devices (CCDs) are presented. Radiation-induced trapping levels are characterized using a linear array CCD structure and the periodic pulse technique. 1 MeV electron irradiation introduced traps at 0.1 eV and 0.39 eV with bulk trap introduction rates of 1 cm-1 and 0.33 cm-1, respectively. The devices were irradiated to a maximum fluence of 9×1014 electrons/cm2. 1 MeV neutron irradiation introduced an electron trap level at 0.64 eV with a bulk trap introduction rate of 0.5 cm-1. Catastrophic device failure occurred at neutron fluences of 6×1013 neutrons/cm2. Device charge transfer efficiency was characterized pre- and post-irradiation over the temperature range of 80°K to 300°K.     

A nuclear density probe:isobaric yield ratio difference

We report our recent progress on the nuclear symmetry energy probe,which is called the isobaric yield ratio difference(IBD),and its application in neutron density determination in experiments.The results obtained by the IBD,from which the isobaric yields in the measured 140 A MeV ~(40.48)Ca + ~9Be and ~(58.64)Ni + ~9Be reactions,and the calculated 80 A MeV ~(38-52)Ca +~(12)C reactions by using a modified statistical abrasion-ablation model,show the sensitivity of the IBD to the density differences between reactions.