磁控溅射法制备纳米Cu薄膜及其微结构的研究

采用磁控溅射法制备出以ITO为基底的纯Cu薄膜,考察溅射时间和基底温度等工艺条件对生长Cu薄膜的影响.用电子扫描显微镜(SEM)、X射线衍射仪(XRD)对薄膜的形貌、厚度和结构进行表征.实验结果表明:在一定范围内调控衬底温度和溅射时间,可获得不同形貌、尺寸和厚度的Cu薄膜,所得薄膜的晶体结构为面心立方结构,均沿(111...     

用微波ECR等离子体增强磁控溅射沉积法在玻璃上镀膜

利用微波ECR等离子体增强磁控溅射沉积技术在玻璃表面制备了硅膜.研究了所得硅膜的表面形貌、附着力和化学稳定性及其红外-可见光谱特性.结果表明此法制备的硅膜均匀性好,附着力及化学稳定性高,对近红外波段有较低的透过率和较高的反射率.     

磁控溅射法制备As-S玻璃薄膜

采用磁控溅射法在ITO导电玻璃上制备As-S玻璃薄膜,采用XRD、透可见-红外性能、扫描电镜、XPS等现代测试手段,研究薄膜的结晶形态、光学性质和成分。结果发现,利用磁控溅射方法得到了透过率较高、光学质量优良、没有明显的缺陷的As-S硫系玻璃薄膜,XPS光电子能谱结果显示薄膜As/S摩尔比为0.686,大于设计组成。     

椭偏仪结合XRD对磁控溅射制备ZnO薄膜性能研究

采用磁控溅射技术在SiO2基底卜制备了ZnO薄膜.通过椭偏仪和X射线衍射仪(XRD)对薄膜光学特性、内部结构的表征,分析了氧气浓度和溅射功率对薄膜折射率、消光系数以及C轴晶格生长的影响.结果表明:氧气浓度的增加使薄膜的折射率变大,消光系数减小;氧气浓度从20%增至40%时,C轴晶向生长增强,当氧气浓度继续增加,C轴晶向生长受抑;溅射功率对薄膜的光学特性影响较小,对薄膜生长结构影响显著;当工作电流由1.0 A增加至1.5 A,C轴择优生长增强,当电流继续增加,C轴晶向减弱.     

磁控溅射制备Cu2ZnSnS4薄膜太阳电池

为解决硫化过程中Sn元素损失的问题以及减少MoS2的厚度,采用磁控溅射技术,在基于钼的钠钙玻璃衬底上采用双周期溅射的方法,以ZnO/SnO2/Cu的顺序制备了含氧的Cu-Zn-Sn预制层.结果表明:SnO2以及ZnO的使用很好的抑制了Sn元素的损失以及MoS2层的形成,而且在590℃的硫化温度下能制备出表面平整、晶粒致...     

工艺因素对磁控溅射法制备钛酸锶钡薄膜性能的影响

磁控溅射技术在薄膜制备领域有着广泛的应用.本文在介绍磁控溅射法制备薄膜材料的基本原理和流程基础之上,详细分析了溅射工艺参数(溅射功率、温度、溅射气压、氧分压)对BST薄膜性能的影响,并提出了研究中需要解决的一些问题.     

Preparation and Characterization Studies of Nanostructured CdO Thin Films by SILAR Method for Photocatalytic Applications

This work reports the preparation of cadmium oxide (CdO) thin films with different molar concentrations on glass substrate by simple and low cost SILAR (Successive Ionic Layer Adsorption and Reaction) method. The characterization, XRD pattern confirmed the presence of polycrystalline CdO in the deposited thin films with the cubic structure. The surface morphology and elemental composition of prepared thin films have been examined by scanning electron microscopy equipped with energy dispersive X-ray (EDX) analysis system. The optical property of the films was analyzed by UV–visible spectroscopy. The band gap of the deposited thin films was estimated by Tauc’s plot and it was found to be 2.6–2.8 eV. The prepared thin films were examined for the decomposition of the Methylene Blue (MB) dye which was visualized by UV-Visible spectroscopy, by decreasing the intensity of absorbance and concentration.     

Chromium Oxycarbide Thin Films Prepared by Inductively Coupled Radio-Frequency Plasma-Assisted Magnetron Sputtering

Chromium oxycarbide films were prepared on SUS 304 stainless steel at temperatures of ∼673 K using the inductively coupled radio-frequency plasma-assisted magnetron-sputtering technique. An inductively coupled 13.56 MHz electromagnetic field with a power of 40 W was supplied to excite the glow discharge, and a direct-current power of 700 W was supplied to sputter a 99.9% chromium target in an Ar/CO₂/CH₄ mixture and in Ar/CO mixture. Electron probe microanalysis revealed that the film contained chromium, oxygen, and carbon. Vickers microhardness of the film was determined to be >1.96 × 10¹⁰ Pa. X-ray diffractometry measurements revealed that the film structure was cubic, and the lattice constant was a ₀= 0.42 nm. This structure was almost the same as that of chromium oxycarbide, Cr₂CO, (rock-salt structure, lattice constant of 0.413 nm). The corrosion resistance of the SUS 304 stainless steel to 1 kmol/m³ H₂SO₄ at 293 K was improved by coating it with a Cr(C,O) film to a thickness of 5.92 μm.     

Growth and Characterization of Tungsten Oxide Thin Films using the Reactive Magnetron Sputtering System

WO₃ thin film is one of the most important and applied metal oxide semiconductors that have attracted the scientist’s attention in recent decades. WO₃ thin films by two different methods: reactive and non-reactive RF magnetron sputtering deposited on soda lime glass. The effect of presence and absence of oxygen gas in system and RF power on structural, morphological and optical properties of thin films were investigated. The XRD analysis of the films shows the amorphous structure. Spectrophotometer analysis and calculation show that the optical properties of reactive sputtered layers were better than the non-reactive sputtered thin films. By changing deposition parameters, over 70 % transmission achieved for WO₃ films. The results showed that reactive sputtering method improved the optical properties of layers and increased band gap up to 3.49 eV and on the other hand reduced roughness of thin films. On the whole, presence of oxygen in the chamber during sputtering improved properties of WO₃ thin films.     

Characteristics of Transparent Conducting W‐Doped SnO2 Thin Films Prepared by Using the Magnetron Sputtering Method

Tungsten‐doped SnO₂ (WTO) thin films with a given thickness of about 300 nm have been prepared by magnetron sputtering with a substrate temperature in the range 400°C–700°C. The effects of substrate temperature on the structural, optical, and electrical properties and of WTO thin films have been investigated. A texture transition from (1 1 0) to (2 1 1) crystallographic orientations has experimentally been found by X‐ray diffraction measurements as substrate temperature is raised. It was found that all thin films showed smooth surface with no cracks and high transparency (>85%) with the optical band gap ranging from 4.22 to 4.32 eV. The mobility varied from 12.89 to 22.48 cm²·(V·s)^?1 without reducing the achieved high carrier concentration of about 1.6 × 10²⁰ cm^?3. Such an increase in mobility is shown to be clearly associated with the development of (2 0 0) but concurrent degradation of (1 1 0) in WTO thin films.     

Photoluminescence from Boron-Doped Titanium Nitride Nanocomposite Thin Films Prepared by the Magnetron Sputtering Method

Boron-doped titanium nitride (TiBN) thin films with nanosized grains were prepared by a magnetron sputtering method. X-ray diffraction and transmission electron microscopy observation indicated that TiBN thin films have a cubic structure with grains ∼5 nm in size. The photoluminescence (PL) of the films was investigated as a function of temperature over a wavelength range of 350–900 nm. Two PL peaks near 3.20 and 2.38 eV were conisdered to have resulted from the recombination of the donor-bound excitons and deep-trap defects with the holes in the valence band, respectively. An energy transfer from bound electrons to deep-trap defects was observed in the nanocomposite thin film.     

Optical and Structural Properties of TiO2 Thin Films Deposited by RF Magnetron Sputtering

Silicon - Titanium dioxide thin films were grown by RF magnetron sputtering. After that, deposited TiO2 films were annealed at 300 °C for 2 h. Having used different oxygen flow rates as a...     

磁控溅射功率对WOx薄膜结构和光催化活性的影响

采用射频磁控溅射法在非加热载玻片上制备WOx薄膜.通过X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、X射线光电子能谱仪(XPS)、台阶仪、UV-Vis-NIR3600型紫外可见分光光度计和接触角计,研究不同溅射功率下薄膜的物相结构、表面形貌、元素价态、膜厚、光学性能、光催化和亲水性能.结果表明,随着溅射功率增加,薄膜的光学带隙逐渐减小,薄膜光催化活性与亲水性均提高.180 W溅射功率沉积的薄膜放置在亚甲基蓝溶液里,然后用紫外灯照射210 min,亚甲基蓝降解率达到97％;WOx薄膜在紫外灯下照射120 min时,水接触角达到12.2°,停止照射之后放置在可见光下260 min,水接触角达到19.1°.     

Nanostructured TiCrN thin films by Pulsed Magnetron Sputtering for cutting tool applications

Nanostructured Titanium chromium nitride (TiCrN) thin films at different pulsed frequencies were grown on steels by pulsed reactive DC magnetron sputtering technique. The crystal structure and morphology of the TiCrN films sputtered at different frequencies were characterized. The surface composition and chemical states of each element in TiCrN thin films were studied by ion scattering spectroscopy (ISS) and X-ray photon spectroscopy (XPS).The electrochemical corrosion behavior of the coated steels was monitored by both impedance spectroscopy and potentiodynamic polarization technique in 3.5% NaCl at room temperature. A block on ring wear tester was used to monitor the variation of coefficient of friction with different sputtering frequency. The mechanical applications of TiCrN thin films were studied by fabricating the thin films on micro drill bits and testing it on 1 mm thick steel plates. A superior surface finish, diameter precision of the hole, reduced material build up on the cutting edges and finally increased tool life were obtained with TiCrN coated HSS drill bits. Machining tests were conducted by coating the inserts with TiCrN thin films.     

磁控溅射偏压对Cr薄膜密度以及表面形貌的影响

利用磁控溅射技术,在不同偏压条件下在Si(001)基底上沉积了金属Cr薄膜样品。用同步辐射装置对样品进行了X-射线反射率测试,采用X-射线反射率分析法研究了不同偏压下Cr薄膜密度的变化。发现当偏压小于300 V时,偏压对所沉积的薄膜起到紧致的效果,偏压为300 V时薄膜密度最大;当偏压大于300 V时,薄膜密度减小。另外,为了探究偏压对薄膜表面形貌的影响,用扫描电子显微镜对各样品进行了表面分析,发现在偏压较小时薄膜表面较为平整;随着偏压增大,表面呈现界面分明的岛状分布。     

新型模板法制备ZnO纳米结构薄膜及其光学性能研究

通过电化学阳极氧化-化学溶蚀技术制备了一种由无数纳米凸点和凹点所构成的新型铝基纳米点阵模板.采用直流反应磁控溅射法在这种新型模板上沉积得到氧化锌纳米结构薄膜.在室温下观察了氧化锌纳米结构薄膜的形貌,测定材料的晶体结构和光致发光(PL)性能,并讨论了不同溅射时间下制备的氧化锌纳米阵列结构以及其对氧化锌PL谱的性能影响.结果表明,采用直流反应磁控溅射-铝基纳米点阵模板可以制备ZnO纳米结构薄膜;PL谱表明溅射时间为10 min得到的氧化锌薄膜在396.5 nm和506.4 nm处分别出现紫外发射峰和蓝绿色荧光发射峰;随着溅射时间延长,氧化锌薄膜PL谱伴有红移现象且强度逐渐增强.这可能是由于改善了晶粒结构导致不能观测到ZnO薄膜的深能级发射峰所致.     

磁控溅射法制备AlN薄膜的研究进展

综述了各种沉积条件对磁控溅射技术生长氮化铝薄膜的微观结构,电学以及光学性能的影响。采用磁控溅射技术,可以选用在适当的条件下制备具有特定功能与结构优良的氮化铝薄膜。     

Preparation of Bi-Sr-Ca-Cu-O Thin Films by Sputtering under a Variable Magnetic Field

Bi-Sr-Ca-Cu-O thin films were deposited on MgO(100) substrates by a new sputtering method which controls the film composition with magnetic fields over the target. Films having compositions close to Bi₂Sr₂Ca₂Cu₃O_x were annealed at 880°C to show superconductivity at moderately high T_c's. Auger electron spectroscopy indicated a chemical interaction between the film and the substrate during the annealing, and this information was utilized to improve the annealing conditions.     

Low Temperature Deposition of High Performance Lead Strontium Titanate Thin Films by in situ RF Magnetron Sputtering

Highly (100) oriented lead strontium titanate (Pb_0.4Sr_0.6TiO₃) thin films were deposited on LaNiO₃ ‐coated Si substrate via radio‐frequency magnetron sputtering method with substrate temperature ranging from 300 to 500°C. The PST thin films were crystallized at a temperature as low as 300°C, which may result from the well‐controlled stoichiometry and the in situ crystallization on seed layer. At an electric field of 400 kV/cm, high tunability of 43% and 57% can be achieved for PST films deposited at 300°C and 500°C, respectively. Moreover, the dielectric response shows weak frequency dependence and the loss factor stays relatively low. The results suggest that such films should be promising candidate for the microwave tunable devices compatible with the current Si technology.