Enhanced Superconductivity in Double-Doping Cu<Subscript>0.15</Subscript>TaSe<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript><Emphasis Type="Italic">S</Emphasis><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Superconducting Cu _x TaSe₂(x=0.05, 0.15) and Cu_0.15TaSe_2?x S _x (x=0, 0.5, 1, 1.5) single crystals have been systematically fabricated by a chemical vapor transport method. It is found that the double doping in TaSe₂, i.e., the simultaneous intercalation of Cu and substitution of Se by S, can substantially enhance the superconducting transition temperature. Transport property measurements give evidence of the coexistence and competition of charge density wave state and superconductivity in Cu _x TaSe₂ which provide meaningful information to understand the complex electronic states in this system. The parallel shift and the fan-shape broadening behaviors are observed in the superconducting transition curves under magnetic fields of Cu_0.15TaSeS and TaSeS, respectively, indicating an increase of coherence length and suppression of superconducting fluctuation induced by copper intercalation.     

Thermal conductivity of Er<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Sn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Se (<Emphasis Type="Italic">x</Emphasis> ≤ 0.025) solid solutions

The thermal conductivity of Er _x Sn_{1 ? x} Se solid solutions has been measured at temperatures from 80 to 360 K. The results have been used to evaluate the electronic and lattice components of thermal conductivity for elastic carrier scattering, parabolic bands, and arbitrary degeneracy. With increasing erbium content and temperature, both the electronic and lattice components decrease considerably. Long-term annealing increases both components. It follows from the present experimental data that heat conduction in Er _x Sn_{1 ? x} Se is mainly due to phonons and that the observed rise in thermal resistance with Er content is due to phonon-phonon and paramagnetic-ion scattering.     

Homogeneity of high-resistivity <Emphasis Type="Italic">p</Emphasis>-Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>〈Au〉 crystals

p-Si_{1 ? x} Ge _x crystals have been diffusion-doped with gold. Gold diffusion in the p-Si_{1 ? x} Ge _x 〈Au〉 samples and their electrical properties have been studied. The results demonstrate that the highest gold concentration in the crystals can be achieved in the temperature range 1000–1050°C. An expression has been derived which indicates that, all other factors being the same, compensation with Au, an amphoteric impurity, insures better homogeneity compared to codoping with acceptor and donor impurities. The hole concentration homogeneity in gold-compensated samples is at the same level as or even better than that in the uncompensated material.     

Raman spectroscopy determination of carrier concentration in <Emphasis Type="Italic">n</Emphasis>-In<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>As epitaxial films

We have studied in detail the coupled phonon-plasmon mode Raman spectra of n-In _x Ga_{1 − x} As with n in the range 10¹⁷ to 10¹⁹ cm⁻³. The results indicate that the behavior of the high-frequency mode L ₊ can be described in terms of coupled modes in the Drude approximation. The proposed theory and experimental data are used to estimate the carrier concentration in the solid solution and its composition.     

Synthesis of ultrafine fluorite Sr<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Nd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript>2 + <Emphasis Type="Italic">x</Emphasis></Subscript> powders

We have identified conditions that ensure the preparation of ultrafine Sr_{1 − x} Nd _x F_{2 + x} powders uniform in phase composition. The powders were characterized by X-ray diffraction and scanning electron microscopy. The powder particles have the form of faceted nano- and microcubes and range in size from 30–100 nm to 0.3–2.5 μm, depending on precipitation conditions.     

Phase transformation of <Emphasis Type="Italic">p</Emphasis>-Cd<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>GeAs<Subscript>2</Subscript> single crystals at 5.5 GPa

The electrical resistivity and Hall coefficient of oriented single-crystal p-Cd_{1 − x} Mn _x GeAs₂ samples have been measured at high pressures. The results indicate that the crystals undergo a reversible structural transformation at 5.5 GPa, which is independent on the sample orientation.     

Growth of epitaxial Cd<Subscript>1–<Emphasis Type="Italic">x</Emphasis> </Subscript>Mn<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>Te films

We have studied the growth and structure of epitaxial films of Cd_1–xMn_x (x = 0.03) diluted magnetic solid solutions grown on mica substrates by molecular beam epitaxy and identified conditions for producing n- and p-type epitaxial films. Using an additional Te vapor source and optimizing the substrate temperature in the growth process, we were able to obtain structurally perfect p-type Cd_1–xMn_xTe (x = 0.03) films with clean, smooth surfaces. The growth plane of the films on the mica substrates is (111) of a face-centered cubic lattice and their unit-cell parameter is а = 6.477 Å.     

Preparation and Properties of Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Te

Mn _x Hg_{1 ? x}Te (x = 0.05, 0.12) single crystals were grown by solid-state recrystallization, and their axial and radial homogeneity was assessed by optical, electrical, and electron-microscopic measurements. The crystals are p-type, with a hole concentration of (4.3–5.3) × 10²² m^?3 and Hall mobility in the range (410–570) × 10^?4 m²/(V s).     

Mechanism of nanostructuring in fluorite-like Ca<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>La<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript>2 + <Emphasis Type="Italic">x</Emphasis></Subscript>

Nanostructuring in fluorite-like Ca_{1 ? x} La _x F_{2 + x} is shown to be associated with the precipitation of an CuAu-ordered phase. The shape of the precipitates is governed by the energetics of the {001} and {111} faces of tetragonal inclusions in highly anisotropic media and is nearly cuboctahedral. The misfit strain relaxes through the generation of twins, which nucleate along the intersection lines of {001} and {111} faces. The twins impede facial development and further growth and ordering of precipitates, thereby freezing the precipitation process in its initial stage. For this reason, the phase segregation is difficult to reveal, and Ca_{1 ? x} La _x F_{2 + x} crystals appear homogeneous.     

Lattice parameter of PbTe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cl<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> solid solutions

The lattice parameter of PbTe_1?x Cl _x solid solutions is shown to be a nonmonotonic function of chlorine content, with a minimum at x = 0.005. The results are interpreted in terms of a self-compensation model.     

Structural Parameters and Spin Filtering Properties of Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(<Emphasis Type="Bold">M</Emphasis>)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>P compound

In this work, we have explored the structural and magnetic properties of GaP-based diluted magnetic semiconductors (DMSs). Based on first-principle density functional theory (DFT) calculations and using a full potential linearized augmented plane wave (FP-LAPW) method in generalized gradient approximation (GGA), some significant structural and magnetic properties of Ga _1?x (M) _x P compound as DMS are investigated. In this compound, M is a transition element such as vanadium (V), manganese (Mn), cobalt (Co), and copper (Cu) with a concentration of X. We have calculated the structural parameters such as the equilibrium lattice constant and bulk modulus of the compound. Furthermore, the spin polarization and magnetic moments are studied. We have found that by increasing the atomic number of the transition element, the lattice constant reduces, except for that of Cu, and compressibility improved in comparison with GaP. Moreover, with X=25 %, the Ga_0.75(M)_0.25P compound becomes more stable by increasing the atomic number of the transition element M. The study of the electronic properties of the compound indicates that the main contribution in total density of states near Fermi level is related to the 3d orbitals of the transition elements and the highest magnetic moment is for Mn-doped GaP.     

Hydrochemical synthesis of AgCl<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Br<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript> solid solutions

A phase-component model is proposed for the hydrochemical conversion of silver chloride to AgCl _x Br_{1 − x} solid solutions, and the corresponding quantitative relations are derived. Experimental data are used to obtain a relation between the equilibrium composition of solid solutions and that of the liquid phase at different temperatures. The possible mechanisms of solid-solution formation are considered.     

Ordering and twinning in the nonstoichiometric phase La<Subscript>1 − <Emphasis Type="Italic">y</Emphasis></Subscript>Ca<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>F<Subscript>3 − <Emphasis Type="Italic">y</Emphasis></Subscript>

The nonstoichiometric phase La_{1 ? y} Ca _y F_{3 ? y} with a LaF₃-related structure has been studied by electron diffraction. In addition to diffraction features corresponding to twinning on the (001) and {1\(\bar 2\)0} planes, typical of LaF₃, evidence has been found for twinning on the {101} and {102} planes. This behavior is accounted for by the formation of ordering domains with an ordering direction inclined to mirror planes. It seems likely that ordering domains determine many of the properties of nonstoichiometric phases.     

Thermal conductivity of TlIn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Dy<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript>2</Subscript> solid solutions

The thermal conductivity of TlIn_{1 ? x} Dy _x Te₂ solid solutions, based on the compound semiconductor TlInTe₂, has been measured as a function of temperature (80–350 K). The results have been used to assess the effects of phonon-phonon and impurity scattering on the thermal conductivity of the solid solutions. Phonon scattering by the isovalent impurity Dy is shown to be significant above the Debye characteristic temperature of the materials.     

Growth and properties of single crystals of Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (0 < <Emphasis Type="Italic">x</Emphasis> < 0.35) solid solutions

Single-crystalline Si_{1 − x} Ge _x ingots with a germanium content of up to 35 at. %, a diameter of 10mm, and a length of up to 10 cm were grown using the crucibleless float-zone melting technique. The ingots had a homogeneous distribution of germanium and a low density of dislocations. The material was characterized with respect to the structure and electrical properties. The resistivity and the carrier lifetime, mobility, and concentration in Si_{1 − x} Ge _x single crystals have been studied as functions of the germanium content.     

Properties of YBaCuFe<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ni<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>5</Subscript> (0 < <Emphasis Type="Italic">x</Emphasis> ≤ 0.3) solid solutions

YBaCuFe_{1 – x}Ni_xO₅ solid solutions are shown to exist for x 0.3. Data are presented on the lattice parameters, thermal stability, thermal expansion, electrical conductivity, thermoelectric power, magnetic susceptibility, and dielectric properties of the solid solutions. Ni substitution for Fe notably increases the electrical conductivity of the solid solutions, reduces their thermoelectric power and thermal expansion, and shifts the antiferromagnetic—paramagnetic phase transition and dielectric anomalies in YBaCuFe_{1 – x}Ni_xO₅ to lower temperatures.Translated from Neorganicheskie Materialy, Vol. 40, No. 12, 2004, pp. 1515–1519.Original Russian Text Copyright © 2004 by Chizhova, Klyndyuk, Bashkirov, Petrov, Makhnach.     

Synthesis and structural properties of AgCl<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Br<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0.5–0.8) solid solutions

The properties of AgCl_{1 - x} Br_x ( x = 0.5-0.8) solid solutions prepared by the Bridgman-Stockbarger method are studied using a variety of techniques (x-ray diffraction, microstructural examination, chemical analysis, and x-ray microanalysis). The lattice parameter of the solid solutions is found to exhibit a negative deviation from additivity. The effects of composition and preparation conditions on the structural properties of the solid solutions are discussed. The structural characteristics of abrasively polished surfaces of the samples are shown to be influenced by the preparation conditions.Translated from Neorganicheskie Materialy, Vol. 41, No. 1, 2005, pp. 78–87. Original Russian Text Copyright © 2005 by Artjushenko, Baskov, Golovanov, Kuzmicheva, Lisitskii, Musina, Polyakova, Sakharov, Sakharova.     

Structural and magnetic properties of Cr<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>V<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te (<Emphasis Type="Italic">x</Emphasis> = 0−0.4) solid solutions

Cr_1?x V _x Te solid solutions with a hexagonal structure (NiAs type) have been obtained in the composition range x = 0?0.4 by direct melting of elemental mixtures, followed by annealing and quenching. The 80-K magnetic moment is found to decrease from 2.4μ_B in CrTe to 1.52μ_B in Cr_0.6V_0.4Te. The Curie temperature varies from 342 K to 321 K, respectively.     

Optical and transport properties of Fe-doped Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Se (<Emphasis Type="Italic">x</Emphasis> = 0.35)

The optical and transport properties of Fe²⁺-doped Cd _x Hg_1?x Se crystals with a midgap Fe²⁺ level have been studied. The results demonstrate that Fe²⁺ ions influence both the optical and transport properties of Cd _x Hg_1?x Se〈Fe²⁺〉. The observed optical absorption bands are due to a donor Fe²⁺ level in the band gap, with a depth E _Fe = 0.21 eV, and to band-band transitions. Thermal anneals in Hg and Se vapors have different effects on the carrier concentration and mobility in the crystals. The effect of annealing on the transport properties of the Fe²⁺-doped crystals differs from that for undoped crystals and is governed by the state of point defects.     

Visible photoluminescence of hydrothermal synthesized Sn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ni<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>2</Subscript> nanostructures

Sn_1−x Ni _x O₂ nanostructures such as nanocubes, nanospheres and hollow spheres were synthesized by a simple hydrothermal method. Room temperature photoluminescence spectra of the as-synthesized samples display a strong yellow emission at about 600 nm and a weak blue emission at about 430 nm. The as-prepared and annealed Sn_1−x Ni _x O₂ (x = 0, 0.01, 0.02, 0.04) were characterized by X-ray diffraction, field emission scanning electron microscopy, Raman spectrum, UV–Vis absorption spectra, and room temperature photoluminescence spectra. By investigating the relationship between the Raman band centered at 560 cm⁻¹ and the photoluminescence of the samples, we suggest that the broad yellow emission and weak blue emission primarily originate from singly ionized oxygen vacancies and tin interstitials, respectively.