CMOS外延工艺下MLSCR器件鲁棒性的研究

传统的改进型横向SCR(MLSCR)器件能够在最小的面积下实现最大的静电放电(ESD)鲁棒性,被广泛应用于ESD防护领域。但是,采用55 nm CMOS外延工艺制作的MLSCR器件会出现鲁棒性剧烈下降且回滞即失效的问题。对器件版图结构进行调整,并进行多组实验,验证了器件失效机理。实验结果表明,在55 nm CMOS外延工艺下,阱的方块电阻阻值大大降低,导致主电流泄放通道难以开启,从而出现MLSCR器件不能开启的问题。     

双阱CMOS器件单粒子瞬态效应机理研究

介绍了一种65 nm 双阱CMOS工艺设计的六管SRAM单元的抗辐射性能。通过三维有限元数值模拟的方法,分析了SRAM单元的单粒子瞬态效应在NMOS管中的电荷收集过程和瞬态脉冲电流的组成部分,并提出一种高拟合度的临界电荷计算方案。双阱器件共享电荷诱发的寄生双极放大效应对相邻PMOS管的稳定性有着显著的影响,高线性能量传输提高了器件单粒子翻转的敏感性。电学特性表明,全三维器件数值仿真的方法能够有效评估因内建电势突变产生的瞬态脉冲电流。该方法满足器件仿真对精确度的要求。     

市话电(光)缆不同敷设方式的防雷处理

本介绍了市内电话电(光)缆在不同敷设方式下的防雷处理方法和标准要求，对雷电等高压侵入的保护，以及确保人身、设备安全，不断提高通信质量等方面起到了应有的作用。     

~(60)Coγ射线低能散射对CMOS器件电离辐射效应的影响

在60 Coγ射线辐射场中采用 Pb/ Al屏蔽和非屏蔽的方法 ,研究比较了低能散射对 CMOS器件电离辐射效应的影响。在理论计算基础上 ,设计了 Pb/ Al屏蔽盒。实验结果表明 ,低能散射占总电离辐射吸收剂量的 2 0 %左右 ,采用 Pb/ Al屏蔽盒可以消除低能散射的影响 ,能更可靠地进行微电子器件抗辐射加固水平的精确评估与对比 ;低能散射对 Kovar封装的器件产生剂量增强效应 ,剂量增强因子小于 2 .0     

CMOS兼容近红外Si_(0.7)Ge_(0.3)/Si p-i-n(SOI)光电探测器(英文)

报道了一种采用 U HV/CVD锗硅工艺和 CMOS工艺流程在 SOI衬底上制作的横向叉指状 Si0 .7Ge0 .3/Si p- i-n光电探测器 .测试结果表明 :其工作波长范围为 0 .7～ 1.1μm,在峰值响应波长为 0 .93μm,响应度为 0 .38A/W.在3.0 V的偏压下 ,其暗电流小于 1n A,寄生电容小于 1.0 p F,上升时间为 2 .5 ns.其良好的光电特性以及与 CMOS工艺的兼容性 ,为研制能有效工作于近红外光的高速、低工作电压硅基光电集成器件提供了一种新的尝试 ,在高速光信号探测等应用中有一定的价值     

台湾电子元件技术考察

我们小组三人应台湾久尹股份有限公司的邀请 ,于 1999年3月 8日至 18日去台湾考察电子元件企业并洽谈业务。在台期间共考察了久尹股份有限公司、信昌电子陶瓷有限公司、台湾菱庆股份有限公司、台扬科技股份有限公司、华容股份有限公司、台湾电容器公司等 6家公司 12个工厂。结合考察工厂参观了一些城市和地区。详细参观了新竹科学工业园区。这是一个保税区 ,也是一个执行特殊免税政策的高新技术研究开发区 ,包括集成电路技术、电脑及相关技术、通讯、光电子、生产特技、精密机械等 40 0家左右的高新技术企业。台湾出口电子产品 40 0 0亿元 (…     

台湾电子元件技术考察(续)

3　台湾菱庆股份有限公司台湾菱庆股份有限公司 MMC(以前为 KCK)及两个工厂(台中县加工出口区 )　由日本 MMC (KCK)在台投资。 1970年成立 ,注册资金 16 82 45 40 0元 (新台币 )。主要产品是圆片形瓷介电容器、半导体瓷介电容器 (包括表面型和晶界层型 )、多层陶瓷电容器、安全规格的交流瓷介电容器。生产能力为月产 1.5亿只陶瓷电容器。有两个工厂 ,一厂是前、中工序 ,制造瓷基体和被银电极瓷片 ;二厂是后工序 ,电容器的装配。员工有 34 7名 :一厂 16 1人 ,二厂 174人 ,其余 12人是台北分公司业务人员 ,日本专家驻台湾工作人员有 7人…     

Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)

Semiconductors - Ion implantation is a key technology without alternative for doping silicon carbide SiC in the manufacturing processes of SiC devices. SiC technology has a number of distinctive...     

准视频点播技术在有线数字电视平台上的运用

分析了基于有线数字电视平台的准视频点播(NVOD)的系统构成;NVOD前端设备的功能及工作流程;NVOD系统在有线数字电视平台运用中的服务通道及带宽描述;数据网络上的视频广播与点播的实现方式.     

NSGA-II在不同性能指标组合下的PID参数优化

文中对于PID参数整定问题,通过分析比较不同组合的性能指标,在基于多目标智能优化算法下进行PID参数整定。该方法基于非支配排序多目标遗传算法(NSGA-II),在采用不同性能指标组合后生成的不同目标函数空间,通过Matlab进行控制系统仿真后,对输出的阶跃响应曲线进行了分析和比较,从而寻找到了IAE、ISE以及控制输入的平方项作为最优的三目标性能指标组合。     

Dynamic Microwave Frequency Division Characteristics of Coplanar Transferred-Electron Devices in a Resistive Circuit (Letters)

It is shown that dynamic microwave frequency division (divide-by-K) can be achieved by employing a transferred-electron device (TED) in a resistive circuit. The absolute bandwidth over which the input signal will be divided by a particular integer K and the maximum output frequency is the device transit time frequency. The percentage bandwidth is 200/(2K - 1) percent. With two-terminal TED's, divide-by-K (K = 2, 3, 4, 5) was demonstrated with substantial bandwidth.     

Investigation of the Epitaxial Growth of Octamethylene‐Tetrathiafulvalene (OMTTF) on Substrates of Different Chemical Reactivity

Monolayers of the organic donor OMTTF (octamethylene‐tetrathiafulvalene) were grown on a Ag(100) substrate and on the iodine c(2×2) superstructure on Ag(100) by organic molecular beam deposition (OMBD) under ultra high vacuum (UHV) conditions. The films were characterized by low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). In the monolayer regime the molecules grow on both substrates in an ordered structure. By comparing the degree of long‐range order and the geometrical structure observed on Ag and on iodine with that of OMTTF‐TCNQ we discuss the interplay between the different interactions and long‐range order in epitaxial growth.     

Verification of a high precision CMOS sensor for angle-of-arrival (AOA) measurement of LED light in ultra-miniaturized applications

In this study a specially revised version of the concept for measuring the angle-of-arrival (AOA) of incidence light was used, which is particularly well suited for the construction of trigonometric sensor concepts with external dimensions of only a few millimeters. The aim of the study was to break down the interrelationships for the overall systemically achievable accuracies. The study therefore focused on the lowest possible power consumption of the LED light source used, minimum component dimensions and quantities, outline of the practicable minimum distances between LED light source and integrated sensor unit, robustness of the sensor against gradients and intensity changes in lighting, illumination intensity and sensor noise, as well as the requirements for the precision of the mechanical components used. It could be shown that the key limiting factor isn't the optical/electronic precision of the CMOS sensor concept used, but the finite precision of the mechanical components.     

Ti/Ni(80%)Cr(20%) Thin-Film Resistor With a Nearly Zero Temperature Coefficient of Resistance for Integration in a Standard CMOS Process

A thin-film resistor out of Ni(80%)Cr(20%) for integration in a standard complementary metal-oxide-semiconductor process with a temperature coefficient of resistance (TCR) below 10 ppm/K was realized by applying a thin Ti layer underneath. The Ti-layer thickness and the temperature and duration of furnace annealing after deposition were optimized in different experiments. The combination of 5-nm Ti + 10-nm NiCr and a 30-min heat treatment at 350degC in a forming gas ambient was found to yield a sheet resistance of about 140 Omega/sq and a TCR of below 10 ppm/K. The long-term drift of the sheet resistance after 1000 h at 200degC was about 0.3%. A transmission electron microscopy analysis was conducted to investigate the structure of the film and a possible change during annealing. An Auger analysis was conducted for film surface analysis.     

新型光纤温度传感器的信号探测终端研究

介绍一种以水银包层光波导作为感温探头的新型光纤温度传感器。它采用的测温方法独特新颖,在２０～１００℃范围的测量精度为０．１℃,理论分析的相对测量精度可达０．０２％。本方案对光电探测终端进行了周密的总体设计,可有效消除测量起始点的外界杂散光的干扰,具有优良的测量重复性,并能实时对采样数据进行计算处理,实现６位数码显示,准确性好,可靠性高。该检测终端同样适用于其他光通信系统中微弱光信号的实时、准确测量     

基于c-Si(P)衬底的a-Si/c-Si异质结模拟研究

本文中研究了影响 a-Si/c-Si 异质结界面复合的主要因素： 表面固定电荷 ,缺陷态载流子俘获界面： ,以及界面缺陷态密度 。当缺陷能级 接近c-Si本征能级,且 满足时,缺陷态复合中心复合速度达到最大。AFORS-HET 软件模拟显示, a-Si/c-Si界面能带不连续显著影响电池Voc、界面缺陷态密度大于1*1010 cm-2.eV-1时,界面态密度的增加会严重降低电池Voc,但其对电池电流密度影响不大。对于c-Si (P)/a-Si (P ) 结构异质结,C-Si衬底的势垒 和a-Si材料内的势垒 对降低c-Si (P)/a-Si (P ) 结构的接触电阻和界面复合速度,表现各不相同。     

Effect of Hydrogen Bonding on a Value of an Open Circuit Potential of Poly-(3,4-ethylenedioxythiophene) as a Beneficial Mode for Energy Storage Devices

Poly(3,4-ethylenedioxythiophene) is one of the semiconducting polymers that has attracted attention as electroactive materials for many different applications such as electrochromic devices, light-emitting diodes, biosensors, and supercapacitors. The fundamental understanding of the origin of its energy storage ability will lead to the proper design of such devices. Generally, the charge storage in supercapacitors is due to the formation of an electrical double layer and/or redox reactions. Recently, it is shown that the formation of cation radicals in PEDOT is induced by the hydrogen-bond formation between formic acid and polymer during electrochemical polymerization. The induced cation radicals play a major role in the charge storage ability of PEDOT, as studied in the current work. Furthermore, the presence of hydrogen bonds in PEDOT leads to the stable in time open circuit potential of 900 mV. This new knowledge leads to the designing of a symmetrical supercapacitor based on PEDOT as active material where hydrogen-bonds play a crucial role in the improved performance of the device.