共查询到19条相似文献,搜索用时 375 毫秒
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硅基双极低噪声放大器的能量注入损伤与机理 总被引:1,自引:0,他引:1
针对Si基双极型低噪声放大器(LNA),用脉冲调制150MHz射频信号在其输入端进行了能量注入实验,研究结果表明Si基LNA的噪声系数和增益特性都是注入能量的敏感参数. 样品解剖和电路仿真显示能量作用使LNA内部晶体管出现基极/发射极金属化损伤,基极金-半接触电阻增大导致了LNA噪声系数增大,而Si基双极器件hFE随时间正向漂移损伤模式使LNA增益随注入能量的增加而增大. 研究表明,由于能量作用下损伤效应的复杂性,以往可靠性研究中单纯采用增益的变化来衡量器件与电路的损伤效应的方法是不全面的. 相似文献
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针对Si基双极型低噪声放大器(LNA),用脉冲调制150MHz射频信号在其输入端进行了能量注入实验,研究结果表明Si基LNA的噪声系数和增益特性都足注人能最的敏感参数.样品解削和电路仿真显示能量作用使LNA内部晶体管出现基极/发射极金属化损伤,基极金.半接触电阻增大导致了LNA噪声系数增大,而Si基双极器件hFE随时间正向漂移损伤模式使LNA增益随注入能量的增加而增大.研究表明,由于能量作用下损伤效应的复杂性,以往可靠性研究中单纯采用增益的变化来衡量器件与电路的损伤效应的方法是不全面的. 相似文献
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要求达到高线性的放大器电路常采用预失真法。而中国南京大学声学院现代声学国家重点实验室和美国加尼福尼亚大学的研究人员开发出一种预失真发生在器件级的新复合晶体管器件。这种新晶体管拓朴结构基于采用一个标准的异质结双极晶体管器件和另外一个倒装型异质结双极晶体管,其集电极电阻用作预失真电路。这个集电极电阻连接到标准多指功率晶体管基极上。随着输入RF功率提高,上述功率晶体管基极到发射极的输入电压将减小,因而给功率晶体管的电流也就更大,补偿了输入电压减小。因此,采用这种预失真技术,因较低跨导引起的振幅失真在较高的RF… 相似文献
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针对数字电路的开发和应用,设计了一种薄基区晶体管,其横向结构采用单侧基极引出.采用全离子注入,实现了基区宽度为80~100 nm的npn纵向结构.基极用电压输入,Vbe在1.2 V附近时,跨导峰值gmac(△Ic/△Vbe)=0.4 mS,βac(△Ic/△Ib)=2.5.当Vbe从0.5 V变到1.2 V时,gmac/gm比βac/β大得多.跨导比电流增益更能准确地描述器件特性.这种器件更倾向于电压控制型器件,用输入电压的变化可以很方便地控制器件开关状态的转换,特别适合于数字电路的开发和应用.采用研制的器件连接了双稳态电路,在电压脉冲的控制下实现了双稳态的翻转. 相似文献
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为解决常规AlGaN/GaN高电子迁移率晶体管(HEMT)因源极电子注入栅极右侧高场区造成的雪崩击穿,并提高器件的击穿电压,提出了一种具有栅源间本征GaN (i-GaN)调制层的新型AlGaN/GaN HEMT结构.新结构器件在反向耐压时将调制层下方部分区域的二维电子气(2DEG)完全耗尽,扩展了沟道的夹断区,有效阻止了源极电子向栅极右侧高场区的注入.仿真结果表明,通过设置适当的调制层长度和厚度,器件的击穿电压可从常规结构的862 V提升至新结构的1086 V,增幅达26%.同时,GaN调制层会微幅增大器件的比导通电阻,对阈值电压也具有一定的提升作用. 相似文献
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为研究单基极薄基区晶体管的特性,设计了一种单侧基极引出结构薄基区的晶体管,在p型SOI衬底上全离子注入实现了基区宽度为80nm的npn纵向结构,基区的平均浓度为1e18cm-3.经过版图设计和工艺流片,在2μm实验工艺线上研制了这种器件.基极采用电压输入,Vbe在1.1V附近,跨导和电流增益都达到峰值,小信号电流增益βac(ΔIc/ΔIb)=2.7,小信号跨导gmac(ΔIc/ΔVbe)=0.45mS,且gmac/gm(Ic/Vbe)比βac/β(Ic/Ib)大得多,跨导比电流增益更能准确地描述器件特性,这种器件更倾向于电压控制型器件,特别适用于数字电路的开发和应用. 相似文献
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通过对硅S波段微波功率双极晶体管的结终端技术实验数据对比和晶体管镇流电阻设计的考虑,提高了微波功率双极器件的击穿电压和电流通过能力及抗烧毁能力。微波器件采用这些技术后,器件的工作频率不但没有降低,反而从原来的S波段的低端(2.25~2.55 GHz),提高到了中高端(3.1~3.5 GHz);器件的集电结反向击穿电压50 V以上的比率由原来的17.6%提高到63.5%;器件的功率增益也从6 dB提高到7.5 dB以上,证明了该工艺方法的有效性与可行性。 相似文献
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A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse(EMP) into the bipolar transistor(BJT) is carried out.Research shows that the increase of the external resistor R_b at base makes the burnout time of the device decrease slightly,the increase of the external voltage source V_(be) at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude i... 相似文献
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Jubong ParkMinseok Jo Joonmyoung LeeSeungjae Jung Wootae LeeSeonghyun Kim Sangsu ParkJungho Shin Hyunsang Hwang 《Microelectronic Engineering》2011,88(6):935-938
We investigated the resistive switching properties of a amorphous carbon-based ReRAM device. In order to minimize the fluctuations of switching parameters, we introduced an external load resistor (RLoad) in series, which indirectly acts as a current limiter. Reduced reset current (Ireset) and improved switching uniformity were obtained when the proper external RLoad was connected. The voltage drop at the ReRAM device during switching was directly monitored using an oscilloscope. We have confirmed that fluctuation of the effective voltage applied across the conducting filament was dramatically reduced by adding RLoad. In contrast, we observed degradation of retention characteristic of sample with RLoad. To meet both switching uniformity and retention characteristics, we need to optimize the resistance of low resistance state. 相似文献
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Mahmoud Al-Sa'di Sebastien Fregonese Cristell Maneux Thomas Zimmer 《Materials Science in Semiconductor Processing》2010,13(5-6):344-348
The impact of introducing a SiGe stress layer formed over the extrinsic base and adjacent to the intrinsic base of NPN-Si-BJT device on the electrical properties and frequency response has been studied using TCAD modeling. Approximately 42% improvement in ft and 13% improvement in fmax have been achieved for the strained NPN-Si-BJT device in comparison with an equivalent standard conventional BJT device. In addition to that, an enhancement of the collector current by almost three times has been achieved. The same approach has been applied for NPN-SiGe-HBT device to clarify the impact of the extrinsic SiGe stress on the device's performance using TCAD modeling. Simulation results have shown that applying the SiGe stress layer on the base region of the HBT device is less efficient in comparison with the BJT device, as the SiGe base is already stressed due to the existence of Ge at the base. Approximately 5% improvement in fmax and 3% improvement in ft have been achieved for the strained HBT device in comparison with an equivalent standard conventional HBT device. 相似文献
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Verzellesi G. Baccarani G. Canali C. Pavan P. Vendrame L. Zanoni E. 《Electron Devices, IEEE Transactions on》1993,40(12):2296-2300
The authors point out that when a triangular shape for the electric field in the base-collector space-charge region of an n-p-n Si BJT (bipolar junction transistor) is assumed, the electron mean energy can be calculated analytically from a simplified energy-balance equation. On this basis a nonlocal-impact-ionization model, suitable for computer-aided circuit simulation, has been obtained and used to calculate the output characteristics at constant emitter-base voltage (grounded base) of advanced devices. Provided the experimental bias-dependent value of the base parasitic resistance is accounted for in the device model, the base-collector voltage at which impact-ionization-induced snap-back occurs can be accurately predicted 相似文献
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积分电路主要用于波形变换、放大电路失调电压的消除及反馈控制中的积分补偿等场合,是模拟电路教学中的重要内容。本文在频域范围内经过推导,证明在基本积分电路的基础上引入反馈电阻RF可以限制电路的低频增益,减少失调电压带来的积分漂移。并基于multisim仿真平台上验证这一结论,最后给出了反馈电阻、反馈电容的参数设计方法,可供模拟电子电路设计人员参考。 相似文献
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介绍了一种考虑基区SiC/SiO2界面处复合电流的SiC LBJT改进模型。分析了横向碳化硅双极结型晶体管与其垂直结构之间的区别,将横向BJT的外延层和半绝缘机构等效为衬底电容。再引入一个平行于SiC BJT基极结的附加二极管来描述复合电流,以垂直SiC BJT的SGP模型为基础建立SiC LBJT行为模型。校准了LBJT模型的基区渡越时间,模型与实际器件的开关特性接近吻合。相较于未考虑复合电流的LBJT模型,改进后的模型输出特性曲线与实测数据精度误差较小。该模型可以较精确地描述受复合电流影响的LBJT器件行为。 相似文献