信息化在服装设计专业工作室教学模式中的应用现状初探

虽然服装设计专业的课程设置突出"应用"特色,重视实践操作能力的培养,坚持走"工学结合"的人才培养之路,针对学生能够独立完成从主题构思、制板到成衣制作的人才培养目标,开设了服装工艺、服装结构设计、服装设计等核心课程,但是传统的课程体系设置中各门课程之间是相互独立的,在教学过程中课程与课程之间的联系不够紧密,学生无法将设计的内容与工艺以及结构内容结合起来,造成了专业知识分散、不系统的弊端,且传统的教学模式没有很好的利用现代信息化的教学资源,课堂教学效率不高.为了解决这些问题,很多高校借鉴了国外的工作室教学模式.把教室当企业,课程即是工作内容,在工作室中讲解设计任务、制版方法、样衣制作,并借助于现代信息化的教学资源,带领工作室的同学承担产品设计、制板推板、样衣制作的任务.工作室教学模式使教师与企业紧密结合,教学与实践紧密结合、教学与市场紧密结合,"三结合"的教学方式使教师的专业水平在实践中不断提高,在操作过程中也完成了学习任务.信息化的工作室教学模式的革新,对培养学生学习服装专业的兴趣,优化课堂教学方法,提高教学水平等,具有极大的促进作用.     

高职教学过程实施“工作室主题式教学”的研究与实践

《摄影技术与艺术》是数字媒体技术专业的核心课程之一,它是实践性教学环节很强的课程。因此我们认为摄影教学应该采取以创作实践—教学互动—作品展示为主线的教学方式,作为教学辅助的工作室,应该充分发挥其作用,以培养学生的自主学习能力与创新能力。教师在这过程中的作用也是至关重要的。     

基于工作室制和CDIO理念的设计类课程教学模式研究与实践

工作室制的教学模式具有鲜明的特色,能最大限度地挖掘教学资源,使教学与实践能够很好地融合,能够根据社会需要培养适合的人才。工作室制的教学模式同样是培养设计类专业技能型人才的较好方式。文章就工作室制的特点、构建工作室制的课程体系、培养良好的教学团队、创建良好的教学环境、进行良好的教学成果评价及教学运行与管理进行论述,使其适应高校培养更多符合市场需求的应用型人才的实际。     

《PLC应用技术》教学做一体化课程改革的探索与实践

本文主要针对高职《PLC应用技术》课程的传统教学模式的不足,进行教学做一体化课程改革,以学生职业能力为导向,按照工作过程重新开发课程、学习情景、教学载体,通过项目教学法及"教、学、做、评"的有机融合的教学模式,提高学生的学习兴趣和职业素养。     

基于实践模式的“电力系统分析”课程研究

"电力系统分析"课程作为一门专业核心课程,针对学生对该课程理解上的难题,文章提出实践教学环节对"电力系统分析"课程理解的影响,完善实验课程、课外实训和电力系统综合课程设计,改革实践教学模式,为提高学生的工程实践能力提供技术参考。     

基于CDIO理念的混合式教学研究——以“计算机网络技术”课程为例

文章基于CDIO理念以及混合式教学模式的现状分析,从"计算机网络技术"课程的教学目标、教学内容、实践活动入手,对"计算机网络技术"课程教学进行改革研究,以此从根本上提高教学的有效性,为计算机专业学生的技术知识能力以及创新思维等综合能力的培养与持续提升奠定良好基础。     

翻转课堂在C语言中的教学研究与探索

为了培养软件技术的实践型人才,树立以学生为本的教学理念,文章创新了"C语言程序设计"课程的教学模式,采用了翻转课堂的实践教学模式,改进了现有的教学方法,激励学生主动学习该门课程,提高学生的实践技术能力。     

创建《单片机技术应用》课程教学中基于“能力递进”的DIY教学模式

以增强单片机课程教学效果、提高学生积极性和创造性为目的,针对"单片机技术应用"课程的特点,从课程教学理念、内容、教学方法和手段、实践教学体系等方面进行了教学改革的研究和尝试。根据职业岗位对能力要求的不断提升,遵循单片机工程师成长规律,创新基于"能力递进"的DIY教学模式,使学生能力逐步提高,职业素养逐渐养成,实现良好的教学效果。     

"发电厂电气部分"课程立体化教学模式

本文就"发电厂电气部分"课程立体化教学模式进行了探索,构建了立体化教学模式下的课程教学体系,即以培养学生实践能力为目的,以新编教材为核心的多元化教材体系、"理论教学+新媒体技术"的教学方式和适应行业需求的实践教学改革.分层次实现了学生从学校理论学习到满足行业就业市场的合理过渡.     

基于CDIO的“可编程控制器应用技术”教学改革

"可编程控制器应用技术"是一门实践性和应用性都很强的课程,作者结合本课程的特点和培养目标,详细分析了现阶段该课程教学中存在的问题。提出了借助CDIO工程教学模式,完成对该课程从教学方式、教学内容到成绩评价的全面教学改革。最终实现提高学生工程实践能力的教学目标。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.