直流磁控溅射制备PbTe薄膜

采用直流磁控溅射的方式，用PbTe靶材溅射沉积在玻璃基底上得到了PbTe薄膜，薄膜生长速率约为100nm／min，通过控制溅射时间可沉积几纳米到几微米的不同厚度的薄膜。PbTe薄膜是面心立方结构的纤维状生长的薄膜，溅射沉积时间对薄膜的晶粒大小和结构有较大影响，溅射时间越长薄膜的晶粒越大，薄膜结构越致密，具有片层状结构。得到的PbTe薄膜是富Te的P型半导体薄膜，其电阻率随着薄膜厚度的增大而减小。     

Fabrication of YbAl3 film via annealing amorphous Yb-Al film deposited by RF magnetron sputtering

YbAl₃ single-phase bulk alloy was synthesized by melting at 1258 K using raw Yb and Al metals in the ratio of 1:2.2. A sputtering YbAl₃ target was prepared using the precursor YbAl₃ bulk alloy with the spark plasma sintering process. An amorphous Yb-Al film was fabricated by RF magnetron sputtering using the YbAl₃ target, and a single-phase crystalline YbAl₃ film was fabricated by annealing the amorphous Yb-Al film at temperatures higher than 923 K in Ar atmosphere.     

Ag纳米粒子磁控溅射制备及其热稳定性研究

利用磁控溅射在玻璃衬底上制备Ag纳米粒子及其氧化物（AgOx）薄膜，通过高温退火实验，研究银及AgOx薄膜的热稳定特性。采用x射线衍射分析薄膜的晶相结构，采用UV-Vis分光光度计测定薄膜的吸收光谱。结果表明：Ag纳米薄膜在450nm附近出现特征吸收峰，200℃退火后，峰位蓝移，400℃退火后，吸收峰显著减弱，表明Ag纳米粒子在退火过程中发生了蒸发；AgOx薄膜在200℃下退火后，出现Ag纳米粒子特征吸收峰，表明AgOx的热分解，400℃退火同样导致Ag纳米粒子的蒸发。     

Photoluminescence of ZnO nanocrystals embedded in BaF2 matrices by magnetron sputtering

This paper describes ZnO nanocrystals embedded in BaF2 matrices by the magnetron sputtering method in an attempt to use fluoride as a shell layer to embed ZnO nanocrystals core. BaF2 is a wide-band gap material, and can confine carriers in the ZnO films. As a result, the exciton emission intensity should be enhanced. The sample was annealed at 773 K, and X-ray diffraction (XRD) results showed that ZnO nanocrystals with wurtzite structure were embedded in BaF2 matrices. Raman-scattering spectra also confirmed the formation of ZnO nanoparticles. Abnormal longitudinal-optical (LO) phonon-dominant multiphonon Raman scattering was observed in the sample. Room-temperature photoluminescence (PL) spectra showed an ultraviolet emission peak at 374 nm. The origin of the ultraviolet emission is discussed here with the help of temperature-dependent PL spectra. The ultraviolet emission band was a mixture of free exciton and bound exciton recombination observed in the low temperature PL spectra (at 77 K). Abnormal temperature dependence of ultraviolet near-band-edge emission-integrated intensity of the sample was observed. The band tail state was observed in the absorption spectra, illustrating that the impurity-related defects were caused by the shell of the BaF2 grain layer. For comparison, ZnO films on BaF2 substrates were also fabricated by the magnetron sputtering method, and the same measurement methods were used.     

磁控溅射Ge薄膜的结晶特性研究

采用直流磁控溅射技术制备了不同衬底温度下的Ge单层膜,XRD分析结果表明,当衬底温度低于350℃时Ge膜为非晶结构,高于400℃时开始结晶.并研究了不同尺寸Ge颗粒的Ramah散射谱特征,与晶体Ge的散射谱相比,观察到纳米Ge颗粒Raman散射谱的峰位红移与峰形宽化现象;并根据Raman谱的红移量计算了纳米Ge晶粒的平均尺寸,采用声子限域理论较好地解释了实验结果.     

射频磁控溅射硅薄膜的制备与结构研究

采用拉曼光谱、光学显微镜、透射电镜研究了不同衬底温度、腔体气压对射频磁控溅射法制备的不含氢硅薄膜相结构和形貌的影响.结果表明430℃时薄膜中出现微晶相,平均晶粒尺寸2.8nm.腔体内杂质及衬底表面的显微缺陷会诱发薄膜针孔、凹坑等缺陷的产生.低温、高压会导致薄膜中空洞缺陷的密集.     

Fabrication of cerium oxide films on sapphire by rf magnetron sputtering

Results are presented of experiments to fabricate preferentially (200) oriented CeO₂ films without mechanical stresses on Al₂O₃ substrates. Pis’ma Zh. Tekh. Fiz. 25, 47–51 (June 12, 1999)     

磁控溅射制备ZnO:Eu薄膜发光性能研究

采用射频磁控溅射法在蓝宝石基片上制备ZnO:Eu薄膜,通过X射线衍射仪和荧光分光光度计等测试其晶体结构和发光特性,分析退火对薄膜晶体结构和发光特性的影响.结果表明,ZnO:Eu薄膜为C轴择优生长的多晶薄膜,实现ZnO基质中掺杂Eu3+;退火样品结晶质量较好,有助于ZnO:Eu薄膜中Eu3+的5D0-7F2的能级跃迁发光;高于ZnO带隙的高能激发(间接激发)和Eu3+的7F0-5L6和7F3-5D2能级间的低能共振激发(直接激发)都能观察到Eu3+的5D0-7F2能级跃迁的特征发光(618nm);间接激发时存在ZnO基质与Eu3之间发生能量传递.     

Characterisation of size-controlled and red luminescent Ge nanocrystals in multilayered superlattice structure

Ge nanocrystals (Ge NCs) embedded in a multilayered superlattice structure have been fabricated and investigated. The presence of Ge NCs was confirmed by Raman scattering and X-ray diffraction measurements. The average size of Ge NCs was modulated by the sputtering time of Ge-rich layer and possible mechanisms have been proposed. The blue shift of optical absorption edge was observed with the decrease of nanocrystal size. The photoluminescence showed broad bands centred at ∼ 1.77 eV and ∼ 2.01 eV for 3.9 nm and 3.0 nm nanocrystals, respectively, which are consistent with the theoretical calculation in literature. The properties of shifted optical absorption and red luminescence are tentatively explained by quantum confinement in the Ge NCs.     

Raman and XRD studies of Ge nanocrystals in alumina films grown by RF-magnetron sputtering

Germanium (Ge) nanocrystals (NCs) embedded in alumina thin films were produced by deposition on fused silica and silicon (111) substrates using radio-frequency (RF) magnetron sputtering. The films were characterised by both Raman and X-ray diffraction (XRD) spectroscopy. The deposition conditions were optimised in order to obtain crystalline Ge nanoparticles. In as-deposited films, the typical NC size was ∼3 nm as estimated by means of X-ray diffraction. Raman spectra taken from as-deposited films revealed both amorphous and crystalline semiconductor phases. Annealing was performed in order to improve the crystallinity of the semiconductor phase in the films. After a 1 h annealing at 800 °C the mean NC size estimated from the XRD data and Raman spectra increased to ∼6.5 nm. An increase in the crystallinity of the Ge phase was also confirmed by the Raman spectroscopy data.     

直流磁控溅射制备ZAO透明导电薄膜及性能研究

运用直流磁控溅射法,采用ZAO陶瓷靶材(Al2O3相对含量2%(质量分数)),结合正交实验表通过改变制备工艺中的基片温度、溅射功率、氧流量百分比等参数,在普通玻璃衬底上制备得到ZnO∶Al(ZAO)透明导电薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)、荧光分光光度计、四探针测试仪对样品的晶体结构、表面形貌、光电性能进行表征分析。通过正交分析法得出直流磁控溅射法制备ZAO薄膜的最佳组合工艺为基片温度200℃,溅射功率40W,氧流量百分比20%,退火温度400℃,获得薄膜样品最低方块电阻11Ω/□,薄膜具有最好的发光性能,适合作为薄膜太阳电池的透明导电电极。     

Fabrication of LiCoO2 thin film cathodes by DC magnetron sputtering method

LiCoO₂ thin films were fabricated on Al substrate by direct current magnetron sputtering method. The effects of Ar/O₂ gas rates and annealing temperatures were investigated. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction, Raman scattering spectroscopy and field emission scanning electron microscopy. The as-deposited LiCoO₂ thin films exhibited amorphous structure. The crystallization starts at the annealing temperature over 400 °C. However, the annealed films have the partially disordered structure without completely ordered crystalline structure even at 600 °C annealing. The electrochemical properties of the LiCoO₂ films were investigated by the charge–discharge and cycle measurements. The 500 °C annealing film has the highest capacity retention rate of 78.2% at 100th cycles.     

Fabrication of GaN nanowires on Pd-coated sapphire substrates by magnetron sputtering technique

Large-scale GaN nanowires were successfully synthesized through ammoniating Ga₂O₃/Pd films sputtered on the sapphire(001) substrates. X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, photoluminescence and Raman spectrum were used to characterize the specimens. The results demonstrate that nanowires are single crystal with hexagonal wurtzite structure and have good optical properties. Raman scattering appears broadened and asymmetric compared with those of bulk GaN due to its polycrystalline nature. In addition, the growth mechanism of GaN nanowires is briefly discussed.     

Structural and magnetic properties of TiZrNi thin films prepared by magnetron sputtering and thermal annealing

Distinctive thin layers of TiZr and Ni were deposited by using a magnetron sputtering method and a thermal annealing was applied to discover metallic films of quasicrystals. After a heat treatment in vacuum, 70 nm thick deposited layers were well mixed with nominal compositions of 49.7, 29.3 and 21.0 for Ti, Zr and Ni, respectively, which is very close with the one forming a quasicrystalline phase. The magnetization values were significantly decreased from 0.286 to 0.142 emu/mm3 at 2000 Oe, after annealing, while a shape of magnetic hysteresis was maintained. It is believed that a different magnetic behavior after thermal annealing is due to the homogeneous mixing of atomic elements and possible existence of a metastable phase.     

Stable superhydrophobic surface: fabrication of interstitial cottonlike structure of copper nanocrystals by magnetron sputtering

A stable superhydrophobic copper surface was obtained by radio-frequency magnetic sputtering on Si (100) and quartz substrates. The water contact angle and sliding angle of the superhydrophobic copper surface were 160.5° and 3±1.9°, respectively. Scanning electron microscopy (SEM) photos show that the superhydrophobic surface structure comprises many uniform nanocrystals with a diameter of about 100 nm. A brief explanation of the formation of this special microstructure and the mechanism of its wettability were proposed.     

Fabrication of a n-ZnO/p-Si heterojunction diode by ultra-high vacuum magnetron sputtering

Heterojunction diodes of n-type ZnO were fabricated on a p-type Si(100) substrate using an ultra-high vacuum radio frequency magnetron sputtering method at room temperature. A short-time post-annealing process was performed to prevent inter-diffusion of Zn, dopants, and Si atoms. The post-annealing process at 600 °C enhanced the crystallinity of ZnO films and produced a high forward to reverse current ratio of the heterojunction diode with a barrier height of approximately 0.336 eV. A thin SiO_x layer at the interface of the ZnO film and Si substrate appeared distinctly at the 600 °C annealing, however the post-annealing at 700 °C showed an a-(Zn_2xSi_1 − xO₂) structure caused by diffusion of silicon into the ZnO film. In the n-ZnO/p-Si sample annealed at 700 °C, a rapid change in the barrier height was considered due to the effect of the dopant segregation from the substrate and deformation of the a-SiO_x structure.     

Fabrication of transparent conducting amorphous Zn-Sn-In-O thin films by direct current magnetron sputtering

Amorphous ZnO-SnO₂-In₂O₃ films were grown by direct current magnetron sputtering from vacuum hot pressed ceramic oxide targets of Zn:In:Sn cation ratios 1:2:1 and 1:2:1.5 onto glass substrates. X-ray diffraction analysis showed that the microstructure remained amorphous during annealing at 200 °C for up to 5 hours. By monitoring the electrical resistivity, oxygen content and substrate temperature were optimized during deposition. The optimal films were characterized by Hall Effect, work function and optical spectroscopy measurements. Films of 1:2:1 composition showed the lowest resistivity (7.6 × 10^− 4 Ω-cm), when deposited onto substrates preheated to 300 °C. Transmissivity of all films exceeded 80% in the visible spectral region. The energy gap was 3.52-3.74 eV, and the work function ranged 5.08-5.22 eV, suitable for cathode applications in organic light emitting diodes. Overall, the film characteristics were comparable or superior to those of amorphous tin-doped indium oxide and zinc-doped indium oxide films and may serve as viable, lower-cost alternatives.     

Stable superhydrophobic surface: fabrication of interstitial cottonlike structure of copper nanocrystals by magnetron sputtering

Abstract

A stable superhydrophobic copper surface was obtained by radio-frequency magnetic sputtering on Si (100) and quartz substrates. The water contact angle and sliding angle of the superhydrophobic copper surface were 160.5° and 3±1.9°, respectively. Scanning electron microscopy (SEM) photos show that the superhydrophobic surface structure comprises many uniform nanocrystals with a diameter of about 100 nm. A brief explanation of the formation of this special microstructure and the mechanism of its wettability were proposed.     

Ge/SiO2和Ge/ZnO/SiO2薄膜的磁控溅射制备及电学性能

采用射频磁控溅射方法以石英玻璃为衬底分别沉积制备出了Ge/SiO2和Ge/ZnO/SiO2薄膜。X射线衍射表明薄膜展示了明显的ZnO衍射峰和较弱的Ge衍射峰;傅里叶变换红外光谱曲线证明薄膜均具有各自的特征吸收峰;扫描电镜结果显示薄膜为颗粒状团簇结构,并且加入ZnO中间层可以有效的改善Ge层的质量。同时,对所得薄膜材料的电流-电压性能进行了研究,结果发现,Ge/SiO2薄膜的I-V曲线拟合后为斜线,相当于电阻;ZnO/SiO2薄膜为直线,可以认为是绝缘体;Ge/ZnO/SiO2薄膜在-10～10V之间电流电压呈线性关系,其电阻比Ge/SiO2薄膜小,当电压值超过15V之后,电流急剧增加而迅速使薄膜击穿,薄膜导通。     

Fabrication of p-type ZnO thin films via magnetron sputtering and phosphorus diffusion

ZnO thin films were deposited on heavily phosphorus-doped (n⁺-Si) substrates by radio frequency magnetron sputtering. The films were changed from n-type to p-type by phosphorus diffusion from the n⁺-Si substrates to the ZnO films and being activated thermally during deposition. n-Type ZnO (n-ZnO) films were also deposited onto the p-type ZnO (p-ZnO) films to form n-ZnO/p-ZnO/n⁺-Si multilayer structures. The cross section of the multilayer structure was examined by scanning electron microscopy. Crystal structures of the p-ZnO films were studied by X-ray diffraction and were confirmed to be highly c-axis oriented primarily perpendicular to the substrate. Photoluminescence spectra of the p-ZnO films showed that band-edge UV emission predominated. The hole concentration of the p-ZnO films was between +1.78×10¹⁸ cm⁻³ and +1.34×10¹⁹ cm⁻³, and the hole mobility was 13.1-6.08 cm²/V s measured by Hall effect experiment. The formation of p-ZnO films was confirmed by the rectifying characteristics of the p-ZnO/n⁺-Si heterojunctions and the n-ZnO/p-ZnO homojunction on the multilayer structure as well as by the experimental results of Hall effect.