Growth of vanadium oxide films on InP under mild conditions and thermal oxidation of the resultant structures

Techniques have been developed for producing vanadium oxide films (10 nm to 1 μm thick) on indium phosphide using vanadium(V) oxide gels and sols through immersion and deposition from aerosol. Using scanning tunneling microscopy and X-ray diffraction, we have studied the influence of annealing temperature and time on the morphology and composition of the films and the influence of the films on the thermal oxidation of InP.     

Fabrication of bismuth oxide-tin oxide nanowires by direct thermal oxidation of Bi-Sn eutectic nanowires

Bismuth oxide-tin oxide (BiO_x-SnO_x) heterostructure nanowires with a diameter of 70 nm were fabricated by directly annealing Bi-Sn eutectic nanowires synthesized by the vacuum hydraulic pressure injection process. After removal of AAO (Anodic Aluminum Oxide) template with an etching solution, a spontaneous oxide was formed on nanowires to enclose the Bi-Sn eutectic alloys. While these nanowires went through the annealing process with the proper heating rate of 50 °C/min, the well-annealed oxide nanowires remain solid, straight and segmental. The results of cathodoluminescence (CL) spectrum and photoresponse proved that the products consisted of bismuth oxide and tin oxide. This fabrication methodology provides a simple way to produce one-dimensional oxide nanomaterials.     

Growth of titanium oxide overlayers by thermal oxidation of titanium

This paper describes a theoretical model for the growth of titanium oxide by thermal oxidation of titanium. It is shown that this model can explain the formation of layers of different oxides of titanium and the changes in these layers with variations in the conditions of oxidation. Some experimental X-ray diffraction results which support the model are also given.     

Chemical solution method for fabrication of nanocrystalline iron(III) oxide thin films

A chemical solution technique for preparation of nanocrystalline iron(III) oxide thin films is developed. The deposition process is essentially based on the thermal decomposition of urea. The as-deposited and post-deposition heat-treated materials were characterized by X-ray analysis and Fourier transform infrared (FTIR) spectroscopy. Basic optical and electrical investigations were also performed. X-ray analysis confirmed that post-deposition heat-treated material is nontextured -iron(III) oxide, with an average crystal size of 22 nm. The optical investigations show that the absorption of films (as-deposited and post-deposition treated) gradually decreases with an increase of the wavelength in the 390–820 nm region. The optical band gap for the as-deposited and post-deposition heat-treated films was determined to be 3.2 eV and 2.0 eV, respectively. The obtained -Fe₂O₃ thin films exhibit a rather high resistivity at room temperature. However, our preliminary qualitative investigations have shown that the room temperature resistivity of -Fe₂O₃ thin films is highly sensitive to moisture, indicating their potential applicability in moisture sensing systems.     

On the thermal annealing conditions for self-synthesis of tungsten carbide nanowires from WC(x) films

The thermal annealing conditions in nitrogen ambient for the self-synthesis of tungsten carbide nanowires from sputter-deposited WC(x) films were investigated. Experimental results show that the temperature window for the growth of nanowires lies in the range of 500-750?°C with the corresponding annealing time interval ranging from 2.5 to 0.25?h. The diameter, length, and density of the grown nanowires are in the range of 10-15?nm, 0.1-0.3?μm, and 210-410?μm(-2), respectively. The degree of carbon depletion in the annealed WC(x) films plays a crucial role in determining both the shape and density of the self-synthesized nanowires. Nanowires synthesized at lower temperatures were seen to be smaller in dimension but higher in density. Material analysis reveals that the phase transition from WC to W(2)C arising from decarburization of the WC(x) film during thermal annealing should be responsible for the self-synthesis of nanowires.     

Growth and properties of vertically well-aligned GaN nanowires by thermal chemical vapor deposition process

The vertically well-aligned GaN nanowires on c-Al₂O₃ substrates were grown via a vapor-liquid-solid mechanism. X-ray diffraction indicated the GaN nanowires to have epitaxial and homogeneous in-plan alignment with the c-Al₂O₃ substrates and a strong preferred orientation along the c-axis. The GaN nanowires had a single-crystalline hexagonal structure and c-axis orientation, as confirmed by high resolution transmission electron microscopy.     

Large-area blown bubble films of aligned nanowires and carbon nanotubes

Many of the applications proposed for nanowires and carbon nanotubes require these components to be organized over large areas with controlled orientation and density. Although progress has been made with directed assembly and Langmuir-Blodgett approaches, it is unclear whether these techniques can be scaled to large wafers and non-rigid substrates. Here, we describe a general and scalable approach for large-area, uniformly aligned and controlled-density nanowire and nanotube films, which involves expanding a bubble from a homogeneous suspension of these materials. The blown-bubble films were transferred to single-crystal wafers of at least 200 mm in diameter, flexible plastics sheets of dimensions of at least 225 x 300 mm(2) and highly curved surfaces, and were also suspended across open frames. In addition, electrical measurements show that large arrays of nanowire field-effect transistors can be efficiently fabricated on the wafer scale. Given the potential of blown film extrusion to produce continuous films with widths exceeding 1 m, we believe that our approach could allow the unique properties of nanowires and nanotubes to be exploited in applications requiring large areas and relatively modest device densities.     

P-type tin–indium oxide films prepared by thermal oxidation of metallic InSn alloy films

P-type transparent conducting tin–indium oxide (TIO) films were successfully fabricated on quartz substrates by thermal oxidation of InSn alloy (In / Sn = 0.2) films that were deposited by magnetron sputtering at room temperature (R.T.). Structural and electrical properties of TIO films were investigated. X-ray diffraction studies showed that all TIO films were polycrystalline with an orthorhombic structure. The surface morphology of TIO films viewed by field emission scanning electron microscope (SEM) revealed that the films are composed of uniformly distributed submicron grains. Hall effect measurement results indicated that hole concentration as high as 9.61 × 10¹⁸ cm^− 3 was achieved. It's found that 600 °C was the optimum thermal oxidation temperature to get p-type TIO films with highest hole concentration.     

The growth of porous ZnO nanowires by thermal oxidation of ZnS nanowires

The growth of porous ZnO nanowires (NWs) via phase transformation of ZnS NWs at 500-850 degrees C in air was studied. The ZnS NWs were first synthesized by thermal evaporation of ZnS powder at 1100 degrees C in Ar. On subsequent annealing at 500 degrees C in air, discrete ZnO epilayers formed on the surface of ZnS NWs. At 600 degrees C, polycrystalline ZnO and the crack along the (0001) interface between the ZnO epilayer and ZnS NW were observed. At 700-750 degrees C ZnS NWs transformed to ZnO NWs, meanwhile nanopores and interfacial cracks were observed in the ZnO NWs. Two factors, the evaporation of SO2 and SO3 and the stress induced by the incompatible structure at the interface of ZnO epilayer and ZnS NW, can be responsible for the formation of porous ZnO NWs from ZnS NW templates on annealing at 700-750 degrees C in air. Rapid growth of ZnO at 850 degrees C could heal the pores and cracks and thus resulted in the well-crystallized ZnO NWs.     

Thin films of iron oxide by low pressure MOCVD using a novel precursor: tris(t-butyl-3-oxo-butanoato)iron(III)

Deposition of thin films of iron oxide on glass has been carried out using a novel precursor, tris(t-butyl-3-oxo-butanoato)iron(III), in a low-pressure metalorganic chemical vapor deposition (MOCVD) system. The new precursor was characterized for its thermal properties by thermogravimetry and differential thermal analysis. The films were characterized by X-ray diffraction (XRD), transmission electron microscopy, scanning electron microscopy, and by optical measurements. XRD studies reveal that films grown at substrate temperatures below ∼550 °C and at low oxygen flow rates comprise only the phase Fe₃O₄ (magnetite). At higher temperatures and at higher oxygen flow rates, an increasing proportion of α-Fe₂O₃ is formed along with Fe₃O₄. Films of magnetite grown under different reactive ambients—oxygen and nitrous oxide—have very different morphologies, as revealed by scanning electron microscopic studies.     

Directed synthesis of germanium oxide nanowires by vapor-liquid-solid oxidation

We report on the directed synthesis of germanium oxide (GeO(x)) nanowires (NWs) by locally catalyzed thermal oxidation of aligned arrays of gold catalyst-tipped germanium NWs. During oxygen anneals conducted above the Au-Ge binary eutectic temperature (T?>?361?°C), one-dimensional oxidation of as-grown Ge NWs occurs by diffusion of Ge through the Au-Ge catalyst droplet, in the presence of an oxygen containing ambient. Elongated GeO(x) wires grow from the liquid catalyst tip, consuming the adjoining Ge NWs as they grow. The oxide NWs' diameter is dictated by the catalyst diameter and their alignment generally parallels that of the growth direction of the initial Ge NWs. Growth rate comparisons reveal a substantial oxidation rate enhancement in the presence of the Au catalyst. Statistical analysis of GeO(x) nanowire growth by ex?situ transmission electron microscopy and scanning electron microscopy suggests a transition from an initial, diameter-dependent kinetic regime, to diameter-independent wire growth. This behavior suggests the existence of an incubation time for GeO(x) NW nucleation at the start of vapor-liquid-solid oxidation.     

Thermal transformation of iron (III) oxide hydrate gel

Iron(III) oxide hydrate gel, prepared from ferric ammonium sulphate and sodium hydroxide at pH 10.5 and 60° C, is characterized to be ferrihydrite, and its thermal analyses showed two endotherms at 110 and 380° C and two exotherms at 230 and 420° C, respectively. X-ray diffraction and infrared spectroscopic studies have been used to identify the different products formed at different temperatures. Based on these techniques, a scheme for the decomposition of ferrihydrite to -Fe₂O₃ is presented.     

Synthesis of nanocrystalline iron oxide ultrathin films by thermal decomposition of iron nitropruside: Structural and optical properties

Ultrathin films of nanocrystalline α-Fe₂O₃ have been deposited on glass substrates from an inorganic precursor, iron nitropruside. This is a novel route of synthesis for iron oxide thin films on glass substrates, by annealing the precursor thin film in air at 650 °C for 15 min. The films were characterized using TG-DTA analysis, X-ray diffraction, UV-visible, FESEM, AFM and Raman measurements. X-ray diffraction and Raman analyses revealed that the deposited films contain α-phase of Fe₂O₃ (hematite). The synthetic route described here provides a very simple and cost-effective method to deposit α-Fe₂O₃ thin films on glass substrates with band gap energy of about 2.75 eV. The deposited films were found to show catalytic effect for the photo-degradation of phenol.     

Catalyst-free synthesis of silicon nanowires by oxidation and reduction process

A new process has been developed to grow silicon (Si) nanowires (NWs), and their growth mechanisms were explored and discussed. In this process, SiNWs were synthesized by simply oxidizing and then reducing Si wafers in a high temperature furnace. The process involves H₂, in an inert atmosphere, reacts with thermally grown SiO₂ on Si at 1100 °C enhancing the growth of SiNWs directly on Si wafers. High-resolution transmission electron microscopy studies show that the NWs consists of a crystalline core of ~25 nm in diameter and an amorphous oxide shell of ~2 nm in thickness, which was also supported by selected area electron diffraction patterns. The NWs synthesized exhibit a high aspect ratio of ~167 and room temperature phonon confinement effect. This simple and economical process to synthesize crystalline SiNWs opens up a new way for large scale applications.     

Decolorization of orange II by catalytic oxidation using iron (III) phthalocyanine-tetrasulfonic acid

Orange II, C.I. Acid Orange 7 (AO7), is oxidatively decolorized via catalytic oxidation by iron(III) phthalocyanine-tetrasulfonic acid (Fe(III)-PcTS) as a biomimetic catalyst and KHSO(5) as an oxygen donor. The nature of the decolorization of AO7 was investigated in the catalyst concentration range of 10-50 microM, in which the initial concentration of AO7 was 417 mg l(-1). A 99.6% decolorization was observed at [KHSO(5)] = 2.5 mM and [Fe(III)-PcTS] = 20 microM after a 3-h reaction period. However, the fact that only 4.9% of the TOC was removed indicated that the conversion to CO(2) was incomplete. The results of a total organic nitrogen analysis of the reaction mixture showed that the nitrogen in the azo chain was mainly converted to N(2) gas. In addition, 38.6% of the AO7 was converted to 1,2-dihydroxynaphthalene, and 21.4% to p-phenolsulfonic acid. These results indicate that the degradation via this catalytic system involves the conversion of AO7 to phenolic compounds, followed by N(2) production. In addition, a Microtox test showed that toxicity of the solution increased as a result of AO7 oxidation using this catalytic system.     

Thin cuprous oxide films prepared by thermal oxidation of copper foils with water vapor

We present an improved preparation method for the growth of high quality crystals of cuprous oxide films grown by thermal oxidation of cupper foils with water vapor. This method proved to be good for preparing cuprous oxide films with high purity and large grain size. X-ray diffraction studies revealed the formation of Cu₂O films with preferred (111) orientation. The cuprous oxide diodes fabricated by the above technique have been studied using current-voltage method.     

Fenton-like oxidation of Rhodamine B in the presence of two types of iron (II,III) oxide

The catalytic efficiency of iron (II, III) oxide to promote Fenton-like reaction was examined by employing Rhodamine B (RhB) as a model compound at neutral pH. Two types of iron (II, III) oxides were used as heterogeneous catalysts and characterized by XRD, Mössbauer spectroscopy, BET surface area, particle size and chemical analyses. The adsorption to the catalyst changed significantly with the pH value and the sorption isotherm was fitted using the Langmuir model for both solids. Both sorption and FTIR results indicated that surface complexation reaction may take place in the system. The variation of oxidation efficiency against H₂O₂ dosage and amount of exposed surface area per unit volume was evaluated and correlated with the adsorption behavior in the absence of oxidant. The occurrence of optimum amount of H₂O₂ or of exposed surface area for the effective degradation of RhB could be explained by the scavenging effect of hydroxyl radical by H₂O₂ or by iron oxide surface. Sorption and decolourization rate of RhB as well as H₂O₂ decomposition rate were found to be dependent on the surface characteristics of iron oxide. The kinetic oxidation experiments showed that structural Fe^II content strongly affects the reactivity towards H₂O₂ decomposition and therefore RhB decolourization. The site density and sorption ability of RhB on surface may also influence the oxidation performance in iron oxide/H₂O₂ system. The iron (II, III) oxide catalysts exhibited low iron leaching, good structural stability and no loss of performance in second reaction cycle. The sorption on the surface of iron oxide with catalytic oxidation using hydrogen peroxide would be an effective oxidation process for the contaminants.     

Thermal transformations of iron(III)-nickel(II) mixed oxide gels

Iron-nickel mixed oxide gels have been prepared by a hydroxide co-precipitation technique and their thermal transformation has been studied by thermal analyses, X-ray diffraction and infra-red spectroscopy. Differential thermal analysis (DTA) of the hydrated ferric oxide gel indicates the presence of three exothermic peaks along with a broad endotherm. Addition of nickel oxide decreases the intensities of the exotherms and the peaks are completely absent in the samples containing more than 10 mol % of NiO. On the other hand these samples show the presence of three endothermic peaks. Thermal analysis of the sample containing 50 mol % of NiO indicates the formation of a precursor at around 185° C which changes to nickel ferrite at around 275° C. This ferrite slowly crystallizes with a broad exotherm in the range 280 to 550° C.