Proposal for a polarization-independent integrated optical circulator

A polarization-independent waveguide circulator design is proposed which is well suited for monolithic integration. The circulator consists of multimode interferometers, half-wave plates, and Faraday rotators all in waveguide form. The length of the circulator is 712 /spl mu/m. Simulations show the circulator to have 25 dB of isolation and 1.3 dB of insertion loss at a wavelength of 1.55 /spl mu/m.     

High-efficiency 1.3 /spl mu/m InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic links

High-efficiency electroabsorption waveguide modulators have been designed and fabricated using strain-compensated InAsP-GaInP multiple quantum wells at 1.32-/spl mu/m wavelength. A typical 200-/spl mu/m-long modulator exhibits a fiber-to-fiber optical insertion loss of 9 dB and an optical saturation intensity larger than 10 mW. The 3-dB electrical bandwidth is in excess of 20 GHz with a 50-/spl Omega/ load termination. When used in an analog microwave fiber-optic link without amplification, a RF link efficiency as high as -38 dB is achieved at 10 mW input optical carrier power. These analog link characteristics are the first reported using MQW electroabsorption waveguide modulators at 1.32 /spl mu/m.     

Fabrication and characteristics of GaP-AlGaP tapered waveguide semiconductor Raman amplifiers

We have fabricated GaP-AlGaP tapered waveguide semiconductor Raman amplifiers, and analyzed the effect of tapering in pulse-pumped high-gain operation. The finesse measurement and 80-ps pulse pumped Raman amplification experiment were performed. Although the tapering has caused additional optical loss, the highest gain of 23 dB has been obtained for a tapered waveguide with input facet of 6.0 /spl mu/m/sup 2/ and back facet of 2.9 /spl mu/m/sup 2/ at averaged input power of 170 mW (peak power 26 W). It is shown that the optical loss of the pump light is more severe than the linear optical loss of the signal light when the gain is higher than 20 dB.     

5/spl times/9 integrated optical star coupler in silicon-on-insulator technology

We describe fabrication of the first optical star coupler in silicon-on-insulator (SOI) technology. The 5/spl times/9 coupler consists of two silicon rib waveguide arrays with a radiative slab waveguide region. The star geometry was analyzed and designed using the beam propagation method. The coupler exhibits low loss (average excess insertion loss /spl alpha//spl sim/1.3 dB) and good coupling uniformity (standard deviation /spl sigma//spl sim/1.4 dB) at /spl lambda/=1.55 /spl mu/m. It represents a key component for realization of photonic circuits in a silicon integrated circuit technology.     

Stress-induced polymer waveguides operating at both 1.31 and 1.55 /spl mu/m wavelengths

Metal-defined polymer optical waveguides have been demonstrated for the first time. A metal strip patterned on top of a polymer slab waveguide causes a stress-induced refractive index change, providing lateral optical mode confinement within the core layer. Fabricated waveguides exhibit low propagation loss values of 1.1 dB/cm at 1.31 /spl mu/m and 1.3 dB/cm at 1.55 /spl mu/m for both TE and TM polarisations.     

Arrayed waveguide grating of 70/spl times/60 /spl mu/m/sup 2/ size based on Si photonic wire waveguides

A miniature arrayed waveguide grating of 70/spl times/60 /spl mu/m/sup 2/ size consisting of Si photonic wire waveguides was designed using complete modelling in the finite-difference time-domain simulation. The device was fabricated onto a silicon-on-insulator substrate and evaluated in the wavelength range around 1.55 /spl mu/m. The clear demultiplexing characteristics were observed with a channel spacing of 11 nm and a loss of less than 1 dB.     

Rearrangeable nonblocking SOI waveguide thermooptic 4/spl times/4 switch matrix with low insertion loss and fast response

A rearrangeable nonblocking 4/spl times/4 thermooptic silicon-on-insulator waveguide switch matrix at 1.55-/spl mu/m integrated spot size converters is designed and fabricated for the first time. The insertion losses and polarization-dependent losses of the four channels are less than 10 and 0.8 dB, respectively. The extinction ratios are larger than 20 dB. The response times are 4.6 /spl mu/s for rising edge and 1.9 /spl mu/s for falling edge.     

Low-voltage high-contrast n-i-p-i-based waveguide modulators with alloyed selective contacts

We investigated an electroabsorptive n-i-p-i waveguide modulator based on the Franz-Keldysh effect (FKE), which is especially designed to operate with very low voltage swings over a broad wavelength range. In order to contact the n-i-p-i structure, the layer sequence and annealing conditions of Au-Zn-Au and Ni-Ge-Au contacts were optimized with respect to good selectivity and low contact resistance. The transmission measurements yield a contrast ratio of 30 dB, achieved with a voltage swing less than 1.5 V at a wavelength of 910 /spl mu/m with a 900-/spl mu/m-long waveguide modulator. Contrast ratios of /spl ges/20 dB have been obtained within the whole spectral range from 910 nm to 940 mm with a voltage swing less than 2 V. The absorption loss due to the FKE is below 3 dB.     

Slanted-rib waveguide InGaAsP-InP polarization converters

We summarize experimental and theoretical results for a compact (330 /spl mu/m), low-loss on-chip InGaAsP-InP polarization converter. The converter, which contains a single asymmetric rib waveguide segment, exhibits a measured conversion efficiency of -16 dB and a response of /spl plusmn/3 dB with a maximum excess loss of 0.02 dB over the entire wavelength region from 1530 to 1570 nm.     

Polarisation-insensitive Si/sub 3/N/sub 4/ strip-loaded BaTiO/sub 3/ thin-film waveguide with low propagation losses

A low-loss and polarisation-insensitive singlemode BaTiO/sub 3/ thin-film waveguide is reported. Polarisation-dependent loss as low as 0.1 dB/cm at a wavelength of 1.55 /spl mu/m has been achieved by a novel Si/sub 3/N/sub 4/ strip-loaded BaTiO/sub 3/ waveguide structure. Propagation loss of less than 0.9 dB/cm for both TE and TM polarisations was measured     

Flexible optical waveguide film fabrications and optoelectronic devices integration for fully embedded board-level optical interconnects

This paper demonstrates a flexible optical waveguide film with integrated optoelectronic devices (vertical-cavity surface-emitting laser (VCSEL) and p-i-n photodiode arrays) for fully embedded board-level optical interconnects. The optical waveguide circuit with 45/spl deg/ micromirror couplers was fabricated on a thin flexible polymeric substrate by soft molding. The 45/spl deg/ couplers were fabricated by cutting the waveguide with a microtome blade. The waveguide core material was SU-8 photoresist, and the cladding was cycloolefin copolymer. A thin VCSEL and p-i-n photodiode array were directly integrated on the waveguide film. Measured propagation loss of a waveguide was 0.6 dB/cm at 850 nm.     

A novel ultracompact two-mode-interference wavelength division multiplexer for 1.5-/spl mu/m operation

A novel ultracompact 2/spl times/2 wavelength division multiplexer (WDM) for 1.55-/spl mu/m operation based on highly dispersive two-mode interference (TMI) was designed, theoretically modeled, and verified using a finite-difference-time-domain (FDTD) method. A two-moded waveguide assisted with a dispersive tooth-shaped grating provided a mode-dependent reflection band of central wavelength at 1.55 /spl mu/m. The wavelengths of 1538 and 1572 nm that were at the band edges and had the lowest reflection losses and relatively high dispersion were selected for wavelength multiplexing. The result showed that the wavelengths were separated by grating dispersion in a coupler length of 75 /spl mu/m which was much shorter than the required length of 1.1 mm in a regular TMI multiplexer of no grating. Insertion loss of about 1.7 dB and channel contrast of about 12 dB were achieved.     

Optical mode converter integration with InP-InGaAsP active and passive waveguides using a single regrowth process

A new method for integration of optical mode converters with InP-based photonic integrated circuits is described and demonstrated. The mode converter is integrated to a Sampled Grating DBR (SG-DBR) laser to demonstrate integration and to facilitate accurate fiber-coupling loss measurements. The entire fabrication process requires a single MOCVD regrowth, making it compatible with low-cost integration with other photonic components. The mode converter utilizes a vertically tapered geometry and yields a record 86% coupling efficiency using a lensed, uncoated, single-mode fiber. Cleaved fiber to InP-based waveguide coupling loss sensitivity is measured to be better than 1 dB with /spl plusmn/ 1.85-/spl mu/m lateral fiber misalignment and /spl plusmn/1.5-/spl mu/m transversal fiber misalignment.     

Integrated optical waveguide polarizer based on photobleaching-induced birefringence in an electrooptic polymer

A TE-pass waveguide polarizer is fabricated by utilizing the photobleaching-induced birefringence at room temperature in an electrooptic polymer. The polarizer consists of the photobleached waveguide supporting only TE mode, which is integrated in the middle of the etched rib waveguide supporting both TE and TM modes. It has a simple structure and requires no high temperature process like poling. The measured polarization extinction ratio is about 21 dB at the wavelengths of 1.3 and 1.55 /spl mu/m, and the estimated excess loss is about 0.4 dB.     

InP-based passive ring-resonator-coupled lasers

The design of passive ring-coupled lasers based on InGaAsP waveguides is investigated using a beam propagation method. Mode coupling, propagation loss due to bending, and scattering loss from waveguide sidewall roughness are taken into account. By compromising threshold gain, linewidth and side-mode suppression ratio (SMSR), suitable waveguide width and coupling strength are determined for different ring sizes. Using a ring with radius ranging from 20 to 200 /spl mu/m, it is possible to design passive ring-coupled lasers with threshold gain less than 60/cm and 80/cm for waveguide sidewall roughness 5 and 10 nm, respectively, SMSR larger than 50 dB, and linewidth in the range of /spl sim/3-500 kHz.     

Novel flip-chip bonding technology for W-band interconnections using alternate lead-free solder bumps

A novel lead-free flip-chip technology for mounting high-speed compound semiconductor ICs, which have a relatively severe limitation regarding high-heat treatment, is presented. Solder bump interconnections of 0.95Sn-0.05Au were successfully fabricated by reflowing multilayer metal film at as low a temperature as 220/spl deg/C. The bumps were designed to have a diameter of 36 /spl mu/m with a gap between the chip and the motherboard of 24 /spl mu/m. The electrical characteristics of flip-chip-mounted coplanar waveguide chips were measured. The deterioration in reflection loss in the flip chip mounting was less than 3 dB for frequencies up to W-band.     

Polymeric variable optical attenuator based on long range surface plasmon polaritons

Proposed is a polymeric variable optical attenuator based on long range surface plasmon polaritons (LRSPPs) along a thin metal stripe embedded in polymers. The device is operated by controlling radiation loss of the LRSPP mode resulting from the temperature gradient of the polymer cladding caused by a heater. For guiding LRSPPs and efficient coupling of singlemode fibres, gold stripes 20 nm thick, 4 /spl mu/m wide and 1 cm long are utilised. To obtain a long physical lifetime, the heater is formed on the top of the polymer cladding with a 200 nm Au film which is about ten times thicker than the thin metal waveguide. The fabricated device is characterised at a wavelength of 1.55 /spl mu/m, exhibiting high attenuation of less than 30 dB with an operating power of 100 mW. A fibre-to-fibre total insertion loss of 6.1 dB is achieved when using singlemode fibres.     

An optimized InGaAsP/InP polarization converter employing asymmetric rib waveguides

In this paper, we report on the design of a compact (/spl ap/ 226 /spl mu/m) on-chip InGaAsP/InP polarization converter based on an asymmetric rib waveguide. Our theoretical analysis demonstrates that the device displays a conversion efficiency of < -25 dB (> 99.68% power conversion between orthogonal polarization) at 1550-nm wavelength with a nearly flat response over the optical C band. Regarding fabrication tolerances, we predict that the most sensitive design parameter is the waveguide width as the conversion efficiency drops to 10 dB for a deviation of /spl plusmn/ 0.1 /spl mu/m from the optimized value.     

A W-band InAs/AlSb low-noise/low-power amplifier

The first W-band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm/sup 2/ three-stage co-planar waveguide amplifier with 0.1-/spl mu/m InAs/AlSb high electron mobility transistor devices is fabricated on a 100-/spl mu/m GaAs substrate. Minimum noise-figure of 5.4dB with an associated gain of 11.1 dB is demonstrated at a total chip dissipation of 1.8 mW at 94 GHz. Biased for higher gain, 16/spl plusmn/1 dB is measured over a 77-103 GHz frequency band.     

Eight-channel microdisk CW laser arrays vertically coupled to common output bus waveguides

1.6-nm spectrally spaced eight-channel semiconductor microdisk laser arrays are presented, where high-Q disk lasing modes are vertically coupled out through a common bus waveguide. The spectral channel spacing is achieved by varying the disk resonator radii from 10.6 to 10.95 /spl mu/m. Typical linewidth of 0.25 nm and side-mode suppression ratio of -20dB are observed under continuous-wave lasing operation near /spl lambda/=1.51 /spl mu/m. This is the first demonstration of integrated microresonator laser arrays.