Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields

The effect of an electric field E orthogonal to the quantum-wire axis and a magnetic field H (H ⊥ E, H ‖ E) on conductivity is studied within the context of the parabolic potential model. It is shown that, if the interaction of charge carriers with the rough surface of the nanostructure is taken into account, the charge-carrier mobility μ as a function of increasing E is described by an unsteady oscillating curve. A physical interpretation of such behavior of μ with E is proposed. The specific features of mobility in a transverse magnetic field are discussed.     

The impurity optical absorption and conduction band structure in 6H-SiC

Absorption spectra of nitrogen-doped n-type 6H-SiC crystals were studied for two orientations of the light wave electric field (E) relative to the optical axis (C), E ∥ C and E ⊥ C, within the range from the near-infrared region to the fundamental band. For E ∥ C, a weak absorption band peak at 2.85 eV was investigated for the first time. All the absorption bands observed are attributed to donor (nitrogen) photoionization, as a result of which electrons are transferred to the conduction-band upper minima that correspond to different critical points of the Brillouin zone. A combined analysis of the new data obtained in this study, the previous experimental results concerning photoionization of nitrogen, and theoretical data on 6H-SiC conduction band structure made it possible to refine the arrangement and symmetry of the additional conduction-band extrema in the Brillouin zone.     

Traveling wave amplifier using “VP×B” effect

The “v _p ×B” effect is introduced into a traveling wave amplifier trying to increase its output power and efficiency. The numerical calculating results show that by introducing an tapered static magnetic field into a traditional traveling wave amplifier, its output power and efficiency can be increased obviously comparing with an ordinary traveling wave amplifier, because of the effective interactive duration of electron bunches and a rf field is extended by the “v _p ×B” effect.     

On the photopleochroism coefficient and its temperature dynamics in native oxide-p-InSe heterojunctions

The temperature dependence of the photopleochroism coefficient for a native oxide-p-InSe heterojunction is studied. Different temperature dependences of the shift of the photocurrent long-wavelength edge are recorded for two polarization orientations E ‖ C and E ⊥ C.     

Fundamental spectra of optical functions for indium bromide in the energy range of 2–30 eV at 4.2 K

The spectra of sets of optical fundamental functions are determined for an indium-bromide crystal in the range of 0–30 eV at 4.2 K for the polarizations E ∥ a and E ∥ c. The calculations are carried out using experimental reflection spectra R(E) and several software packages. Their basic features are established.     

Ionospheric wave spectrum measurements

A significant quantity to be measured in the ionosphere is the local spectrum, S(k,ω), of either potential or electron density fluctuations. One can determine from S(k,ω) characteristics of the macroscopic plasma such as the local density and temperature, transport coefficients, and drift current. Determination of S(k,ω) may be carried out by measurement of the cross-power spectrum. Signals from two probes are passed through a cross-power spectrum analyzer, and the measurement is repeated for a series of probe separations. The resulting cross-power spectra, H(r,ω), must be Fourier-transformed to obtain S(k,ω). A number of questions pertinent to the use of this method in space are discussed. These include the expected signal-to-noise ratio, and the frequency and wave-number resolution attainable.     

Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures

A method for determining the conductance matrix is analyzed to study the properties of silicon nanostructures fabricated within Hall geometry on an n-type Si(100) surface as ultra-narrow p-type silicon quantum wells bounded by δ barriers heavily doped with boron. Within the proposed approach, the total current flowing through the multiterminal silicon nanostructure is written in the matrix form as I = G · V, where I and V are the columns of currents and voltages for each of the N terminals, G is the N × N conductance matrix uniquely describing the conductance of the structure under study, taking into account the contribution of contact-area resistances. The high sensitivity of matrix elements to changes in the state of the silicon nanostructure surface under conditions of the precipitation of sodium-acetate solution containing single-strand synthetic oligonucleotides is demonstrated. The prospects of practical application of the results obtained in developing modern biosensors based on determining the conductance matrix of multiterminal semiconductor nanostructures are discussed.     

Differential Maximum Ratio Combining (MRC)-Based Throughput Analysis on Dual-Fading Models of Slotted-Aloha CDMA Systems

In this paper we investigate throughputs of Slotted-ALOHA code division multiple access systems with differential detection upon L-branch antenna by means of maximum ratio combining (MRC) diversity technique. We investigate the effects of co-channel interference by employing two different fading models (i.e. between the desired signals and its interferences.) We consider systems under Nakagami/Nakagami and Rician/Nakagami fading environments. The purpose of employing MRC diversity and differential phase shift keying with L-branch antenna is to overcome multipath fading interference in order to enhance the performance of the systems. Our research indicates that the implementation of L-branch antenna in the receiver have reasonably increased the throughputs of the systems. Furthermore, we also investigate the inverse relation between interference signal and the throughputs of the systems. We further point out that the value of Nakagami fading parameter M and Rician factor K are proportional to the achievable throughputs of the systems.     

On the Far Infra Red Excitation of LO Vibrations in Thick Single Crystals

New experiments show that the solution of the complicated problem of Far Infrared (FIR) absorption by crystals of very low symmetry, illuminated at quasi-normal incidence, might have a simple solution, which has been suggested now that a number of spectroscopic studies on monoclinic Triglycine Sulphate (TGS) are available: i) in a first classical approximation where only the strongest bands are considered, the absorption spectrum depends only on the direction of the electric field E of the IR radiation, and Transverse Optic (TO) vibrations are directly excited with electric dipole variations dp parallel to E. ii) in a second approximation looking only at the weakest absorption bands, it depends only on the direction of the wave vector k and Longitudinal Optic (LO) vibrations are excited with dp parallel to k and extinction coefficients 3 orders of magnitude smaller.     

Nonmonotonic behavior of magnetophotoconductivity in p-CdHgTe

Magnetophotoconductivity of p-Cd_xHg_1?x Te, measured in the Hall configuration with illumination along the magnetic field (k ∥ B ⊥ E), exhibits nonmonotonic behavior with magnetic field in the temperature range in which the material has a mixed conduction. The effect manifests itself as a peak at B ≠ 0; it is caused by a significant magnetoresistance associated with equilibrium charge carriers. The peak appears if the conductivity of equilibrium electrons is greater than or equal to half the conductivity of equilibrium heavy holes; in Cd _x Hg_1?x Te with x = 0.22, this condition is satisfied at temperatures of 140–150 K.     

Electrodynamic properties of plane wire grids

The method of submillimetre BWT-spectroscopy is used to measure electrodynamic parameters of the grids wound from conductors with circular cross sections. The coefficients of transmission and reflection, reflected wave phase, and ohmic losses in conductors are measured in the range of small values of diffraction parameteræ=D/λ<1 (λ is the wavelength,D is the grid spacing) for the case where the wave vector E is directed along the conductors (E‖1). In the diffraction region (0.5<æ<2.2), transmission spectra of the grids are measured for both polarizations. The data obtained are compared to those of different theoretical methods for describing grid electrodynamics. In particular, the transmission spectra are shown to have some peculiarities in the vicinity of sliding pointsæ=1;2 (E⊥1), unpredicted by corresponding theories.     

Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals

The polarization photoconductivity spectra of Bi-doped nonstoichiometric GeSe layered crystals grown by static sublimation were investigated. Two strongly polarized maxima at the photon energies hν_max = 1.35 eV (E ∥ a) and 1.44 eV (E∥ b) due to the V ₁ ^V → V ₁ ^c and Δ ₂ ^v → Δ ₁ ^c optical transitions, respectively, were found in the spectra of nominally undoped GeSe crystals near the intrinsic absorption edge at 293 K. In the low-temperature region, an exciton photoconductivity band peaked at hν_max=1.32 eV, which is due to exciton dissociation at the cation vacancies, was revealed. With an increase in excess Se in crystals, a sharp increase in the intensity of the exciton peak in the photoconductivity spectra was observed. It is shown that doping of GeSe crystals with donor Bi impurity is an effective tool of the control of their electrical and photoelectric properties. Although introduction of Bi into germanium monoselenide does not lead to the conductivity conversion from the p to n type, a sharp increase in the resistivity is observed, the crystals become photosensitive, and a strong impurity band peaked at 1.11 eV arises in the photoconductivity spectra.     

Donor–Acceptor–Donor Modular Small Organic Molecules Based on the Naphthalene Diimide Acceptor Unit for Solution-Processable Photovoltaic Devices

Two novel solution-processable small organic molecules, 4,9-bis(4-(diphenylamino)phenyl)-2,7-dioctylbenzo[3,8]phenanthroline-1,3,6,8(2H,7H)-tetraone (S6) and 4,9-bis(benzo[b]thiophen-2-yl)-2,7-dioctylbenzo[3,8]phenanthroline-1,3,6,8 (2H,7H)-tetraone (S7), have been successfully designed, synthesized, characterized, and applied in solution-processable photovoltaic devices. S6 and S7 contain a common electron-accepting moiety, naphthalene diimide (NDI), with different electron-donating moieties, triphenylamine (S6) and benzothiophene (S7), and are based on a donor–acceptor–donor structure. S7 was isolated as black, rod-shaped crystals. Its triclinic structure was determined by single crystal x-ray diffraction (XRD): space group \(P\bar{1}\) , Z = 2, a = 9.434(5) Å, b = 14.460(7) Å, c = 15.359(8) Å, α = 67.256(9) degrees, β = 80.356(11) degrees, γ = 76.618(10) degrees, at 150 Kelvin (K), R = 0.073. Ultraviolet–visible absorption spectra revealed that use of triphenylamine donor functionality with the NDI acceptor unit resulted in an enhanced intramolecular charge transfer (ICT) transition and reduction of the optical band gap compared with the benzothiophene analogue. Solution-processable inverted bulk heterojunction devices with the structure indium tin oxide/zinc oxide (30 nm)/active layer/molybdenum trioxide (10 nm)/silver (100 nm) were fabricated with S6 and S7 as donors and (6,6)-phenyl C₇₀-butyric acid methyl ester (PC₇₀BM) as acceptor. Power conversion efficiencies of 0.22% for S6/PC₇₀BM and 0.10% for S7/PC₇₀BM were achieved for the preliminary photovoltaic devices under simulated AM 1.5 illumination (100 mW cm^?2). This paper reports donor–acceptor–donor modular small organic molecules, with NDI as central accepting unit, that have been screened for use in solution-processable inverted photovoltaic devices.     

Effect of a transverse electric field on charge carrier mobility in nanowires

For nanowires with a parabolic potential, the effect of an electric field E orthogonal to the system??s axis on the mobility of charge carriers ?? is investigated. With consideration for the interaction of charge carriers with a rough surface, it is shown that, for a nondegenerate electron (hole) gas, the mobility ?? decreases with increasing E. For a degenerate electron (hole) gas, the dependence of ?? on E is described by a nonmonotonic oscillating function. A physical interpretation of the predicted effect is proposed.     

Design and Analysis of InGaN-GaN Modulation Doped Field-Effect Transistors (MODFETs) for Over 60 GHz Operation

A Modulation-Doped Field-Effect Transistor (MODFET) structure realized in InGaN-GaN material system is presented for the first time. An analytical model predicting the transport characteristics of the proposed MODFET structure is given in detail. Electron energy levels inside and outside the quantum well channel of the MODFET are evaluated. The two-dimensional electron gas (2DEG) density in the channel is calculated by self-consistently solving Schrödinger and Poisson's equations simultaneously. Analytical results of the current-voltage and transconductance characteristics are presented. The unity-current gain cutoff frequency (f _T) of the proposed device is computed as a function of the gate voltage V _G . The results are compared well with experimental f _T value of a GaN/AlGaN HFET device. By scaling the gate length down to 0.25 μm the proposed InGaN-GaN MODFET can be operated up to about 80GHz. It is shown in this paper that InGaN-GaN system has small degradation in f _T as the operating temperature is increased from 300°K to 400°K.     

Deterministic Sensing Matrices Based on Multidimensional Pseudo-Random Sequences

An approach is proposed for producing compressed sensing (CS) matrices via multidimensional pseudo-random sequences. The columns of these matrices are binary Gold code vectors where zeros are replaced by ?1. This technique is mainly applied to restore sub-Nyquist-sampled sparse signals, especially image reconstruction using block CS. First, for the specific requirements of message length and compression ratio, a set Λ which includes all preferred pairs of m-sequences is obtained by a searching algorithm. Then a sensing matrix A _M×N is produced by using structured hardware circuits. In order to better characterize the correlation between any two columns of A, the average coherence is defined and the restricted isometry property (RIP) condition is described accordingly. This RIP condition has strong adaptability to different sparse signals. The experimental results show that with constant values of N and M, the sparsity bound of A is higher than that of a random matrix. Also, the recovery probability may have a maximum increase of 20 % in a noisy environment.     

Determination of minimum cost interference between services sharing the same frequency bands

The optimum value of interference between two radio communication systems sharing the same frequency band is the level that minimises the total cost, including capital costs and annual costs;it should therefore be used in system design. The maximum permissible value of interference is the value corresponding to a significant increase in minimum total cost as the interference-controlling parameters are varied. The paper describes a procedure to determine these values and achieve the partitioning of the performance objectives specified by Ccir among the various noise and interference sources. The method is applied to mutual interference between an Fdm-Fm terrestrial radio-relay system and an Scpc/psk/4 øsatellite earth station.     

Rashba spin splitting and exchange enhancement of the g factor in InAs/AlSb heterostructures with a two-dimensional electron gas

The exchange enhancement of the g factor of quasiparticles in InAs/AlSb heterostructures with a two-dimensional electron gas exhibiting Rashba spin splitting is investigated using the 8-band k · p Hamiltonian. It is shown that, in low magnetic fields, Rashba spin splitting yields a profound increase in the amplitude of oscillations of the quasiparticle g factor renormalized by exchange interaction. From analysis of Shubnikov-de Haas oscillations at the temperature 250 mK, the energy of Rashba splitting and the g factor of quasiparticles are determined. The values determined experimentally are in good agreement with the results of theoretical calculations carried out with consideration for the asymmetric built-in electric field in InAs/AlSb heterostructures.     

Approximation of nonlinear systems having outputs

Suppose we have a nonlinear system with output $$\begin{gathered} \dot x = f(x) + g(x)u, \hfill \\ y = h(x), \hfill \\ \end{gathered}$$ an open setO of state spaceR ⁿ , and a positive integerk. We find conditions onf,g, andh so that for eachx ₀ ε O there is ann-dimensional affine linear system, which depends onx ₀ but not onu, having the property that the output time responses (starting at the statex ₀ of the original nonlinear system and this approximating linear system agree through orderk for any admissable controlu. Several possible applications of our results are examined.