ZnSe/ZnSxSe1−x heterojunction valence band discontinuity measured by x-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy was used to measure the valence band discontinuity at the ZnSe/ZnS_xSe_1−x interface as a function of alloy composition. Due to the large lattice mismatch, the experimental values have to be corrected in order to account for strain in the ZnSe layers. We find the valence band discontinuity to vary between 0 and 0.76 eV as a function of S content x. This result is in excellent agreement with theoretical calculations. It also shows that the conduction band discontinuity is not negligibly small.     

Si衬底上无坑洞3C-SiC的外延生长研究

在冷壁式不锈钢超高真空系统上 ,利用低压化学气相淀积 (LPCVD)方法在直径为 5 0 mm的单晶 Si(1 0 0 )和 Si(1 1 1 )晶向衬底上生长出了高取向无坑洞的晶态立方相碳化硅 (3 C-Si C)外延材料 ,利用反射高能电子衍射 (RHEED)和扫描电镜 (SEM)技术详细研究了 Si衬底的碳化过程、碳化层的表面形貌及缺陷结构 ,获得了界面平整光滑、没有空洞形成的 3 C-Si C外延材料 ,并采用 X-射线衍射 (XRD)、双晶 X-射线衍射 (DXRD)和霍尔(Hall)测试等技术研究了外延材料的结构和电学特性     

可用于Ⅲ族氮化物生长的50mm 3C-SiC/Si(111)衬底的制备

利用新研制出的垂直式低压CVD(LPCVD)SiC生长系统,获得了高质量的50mm 3C-SiC/Si(111)衬底材料.系统研究了3C-SiC的n型和p型原位掺杂技术,获得了生长速率和表面形貌对反应气体中SiH4流量和C/Si原子比率的依赖关系.利用Hall测试技术、非接触式方块电阻测试方法和SIMS,分别研究了3C-SiC的电学特性、均匀性和故意调制掺杂的N浓度纵向分布.利用MBE方法,在原生长的50mm 3C-SiC/Si(111)衬底上进行了GaN的外延生长,并研究了GaN材料的表面、结构和光学特性.结果表明3C-SiC是一种适合于高质量无裂纹GaN外延生长的衬底或缓冲材料.     

Properties of InAs/(Ga,In)Sb strained layer superlattices grown on the {111} orientations

Following the proposal of the extreme type-II InAs/(Ga,In)Sb strained layer superlattice system by Mailhiot and Smith in 1987 for long wavelength infrared detection, a number of groups have experimentally investigated (100) oriented InAs/(Ga,In)Sb strained layer superlattices and demonstrated that these structures can possess energy gaps in the 8–12 μm range with absorption coefficients comparable to HgCdTe. However, a number of advantages are predicted if these structures are grown on the {111} orientations. In this paper, we present details of our investigation of the growth of InAs/GaSb heterostructures and InAs/(Ga,In)Sb strained layer superlattices on the (111)A and (111)B orientations by molecular beam epitaxy, compared to growth on the (100) orientation. Heterojunction growth and incorporation rates of Sb (As) into InAs (GaSb) on (111)A, (111)B, and (100) orientations have been assessed and implications for growth and optical properties of InAs/(Ga,In)SB strained layer superlattices are discussed. GaSb/InAs and InAs/GaSb interfaces on the (111)B orientation are investigated by x-ray photoelectron spectroscopy, and the structural quality of InAs/(Ga,In)Sb strained layer superlattices are investigated by x-ray diffraction.     

Micro-raman investigation of the n-dopant distribution in lateral epitaxial overgrown GaN/sapphire (0001)

We have investigated the n-dopant distribution in the overgrown and window regions of lateral-epitaxial overgrown GaN/sapphire (0001) using room-temperature micro-Raman spectroscopy in the backscattering configuration. From a fit to the high energy-coupled longitudinal optical (LO) phonon-plasmon mode (LPP⁺), we have evaluated n ≈ (6.5±0.6) × 10¹⁷ cm⁻³ in the overgrown region; a value considerably higher than that previously reported by Pophristic et al.⁵ The spectrum from the window region was harder to interpret because of the considerable overlap of the A₁(LO) mode and E_g (750 cm⁻¹) sapphire line with the LPP⁺ trace. The implications of our findings for the overgrown region on the measured thermal conductivity as well as other parameters will be discussed.     

[110]/(001)单轴应力对硅价带结构及空穴有效质量的影响

采用K.P微扰法研究了当硅在[110]/(001)方向受一单轴应力作用时, 应力对硅价带结构及有效质量的影响。结果表明：硅在压应力作用下的价带分裂能要大于同样大小的张应力作用下的价带分裂能;在常见的几种晶向中,有效质量沿[110]晶向是最小的。从抑制带间散射,减小有效质量增强迁移率的角度考虑,沿应力方向的[110]晶向最适宜作为载流子的输运方向。所获得的结论可为单轴应变硅器件应力及导电沟道方向的选择设计提供理论参考。     

Wet Etching of (0001) GaN/Al2O3 grown by MOVPE

H₃PO₄, NaOH, and KOH solutions are found to be useful for removing nitrogen depleted layers or damage induced by high temperature annealing or dry etching of metalorganic chemical vapor deposition-grown (0001)GaN/Al₂O₃. Solutions are selective to the (0001)plane of GaN. However, certain flat planes etched without etch pits are exposed by wet etching.     

Mechanism investigation of NiO<Subscript>x</Subscript> in Au/Ni/p-type GaN ohmic contacts annealed in air

Recently, Au/Ni/p-type GaN ohmic contacts annealed in an air ambient have been widely investigated. However, to obtain a low specific-contact resistance, the annealing window is limited. In this study, to understand the oxidation function of metallic Ni, the Au/Ni/p-type GaN structure was annealed in an air ambient for 10 min at various temperatures. Using x-ray photoelectron spectroscopy (XPS) analysis, the metallic Ni was oxidized into NiO and NiO_1.3 compositions at annealing temperatures of 500°C and 600°C, respectively. However, metallic Ni still existed on the interface of the Ni/p-type GaN annealed at 400°C. The associated barrier heights of 0.42 eV, 0.21 eV, and 0.31 eV were obtained with p-type GaN for the Ni, NiO, and NiO_1.3 contacts, respectively. The hole concentrations of p-type NiO and p-type NiO_1.3 were 2.6×10¹⁶ cm⁻³ and 2.0×10¹⁸ cm⁻³, respectively. The lower hole concentration of the p-type NiO would lead to reducing the valence-band bending of the p-type GaN, as well as the barrier height for holes crossing from the p-type NiO to the p-type GaN. The formation of NiO was thus an important issue for lowering the specific-contact resistance of the Au/Ni/p-type GaN ohmic contacts annealed in an air ambient.     

Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures

AlGaN/GaN metal-oxide-semiconductor (MOS) capacitor structures using atomic layer deposited high-dielectric-constant (High-k) Al₂O₃/La₂O₃ bilayer films as dielectric have been investigated using high-frequency capacitance-voltage measurement. The stable thickness and uniform surface morphology of the bilayer films with different La/Al deposition cycle ratio (La/Al ratio) were observed after rapid thermal annealing by spectroscopic ellipsometry and atomic force microscopy, respectively. We have found that with a decrease of the La/Al ratio, the dipole layer observed by X-ray photoelectron spectroscopy at Al₂O₃/La₂O₃ interfaces is close to the surface of semiconductor and the flat band voltage shifts to the negative direction. Furthermore, the dramatic drop in dielectric constant of the films as La/Al ratio decrease was caused by the formation of La(OH)₃ in La₂O₃. Finally, the reason for the flat band voltage shifts, which is based on the dielectric constant of Al₂O₃ and La₂O₃ comprising the position of dipole layer in the dielectric films, is proposed.     

CO2‐Laser‐Induced Growth of Epitaxial Graphene on 6H‐SiC(0001)

The thermal decomposition of SiC surface provides, perhaps, the most promising method for the epitaxial growth of graphene on a material useful in the electronics platform. Currently, efforts are focused on a reliable method for the growth of large‐area, low‐strain epitaxial graphene that is still lacking. Here, a novel method for the fast, single‐step epitaxial growth of large‐area homogeneous graphene film on the surface of SiC(0001) using an infrared CO₂ laser (10.6 μm) as the heating source is reported. Apart from enabling extreme heating and cooling rates, which can control the stacking order of epitaxial graphene, this method is cost‐effective in that it does not necessitate SiC pre‐treatment and/or high vacuum, it operates at low temperature and proceeds in the second time scale, thus providing a green solution to EG fabrication and a means to engineering graphene patterns on SiC by focused laser beams. Uniform, low–strain graphene film is demonstrated by scanning electron microscopy, X‐ray photoelectron spectroscopy, secondary ion‐mass spectroscopy, and Raman spectroscopy. Scalability to industrial level of the method described here appears to be realistic, in view of the high rate of CO₂‐laser‐induced graphene growth and the lack of strict sample–environment conditions.     

Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered √3×√3 R30° reconstructed SiC surfaces prepared by in situ heating at ∼950°C. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.     

Capturing transiently charged states at the C60/TiO2(110) interface by time-resolved soft X-ray photoelectron spectroscopy

Time-resolved soft X-ray photoelectron spectroscopy is utilized to determine an energy level alignment and the photoexcited carrier dynamics at a C₆₀/TiO₂(110) interface. The interface electronic structure is characterized by a type II junction, which favors an injection of photoexcited electrons from C₆₀ to TiO₂. Ultraviolet (UV) laser pulse irradiation induces transient shifts of both C 1s and Ti 2p core levels towards the higher binding energies. These energy shifts are caused by a laser-induced charge transfer between the C₆₀ layer and the TiO₂(110) surface. Upon UV absorption, valence electrons of C₆₀ are promoted to unoccupied levels, followed by a resonant transfer to TiO₂, leaving C₆₀ in a cationized state. On the TiO₂(110) side, the electrons are injected into the conduction band to raise the carrier density so that downward bending of the TiO₂ band is induced. The UV-excited states of C₆₀ and TiO₂ have sufficiently longer lifetime than the lifetime of the electron–hole pairs in solid C₆₀. The C₆₀/TiO₂(110) interface is, thus, proved to be efficient for separating the electron–hole pairs generated within the C₆₀ layer.     

GaN/Al_2O_3(0001)的匹配机制及氮化的作用

在Ａｌ２Ｏ３（０００１）衬底上用ＭＯＣＶＤ（金属有机物气相沉积）方法进行了ＧａＮ的外延生长，通过Ｘ射线衍射（同步辐射源）研究了ＧａＮ和Ａｌ２Ｏ３（０００１）的匹配关系。结果表明，经充分氮化的衬底上，ＧａＮ以单一的匹配方式沿［０００１］方向生长；在Ａｌ２Ｏ３（０００１）衬底未经氮化或氮化不充分时，不同程度地出现了其它三种绕〈１１２０〉晶带轴倾斜一定角度的匹配位向。指出了ＧａＮ／Ａｌ２Ｏ３（０００１）的几种匹配方式的晶体学规律。ＧａＮ绕〈１１２０〉晶带轴倾斜的匹配方式是其外延生长过程中降低和Ａｌ２Ｏ３（０００１）的晶格失配、释放界面应变的重要机制之一。     

Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces

Surface treatment of the foreign substrate is a critical factor influencing heteroepitaxial catalyst-free growth of nanowires, their crystal quality, their diameter and their areal density. To this end, catalyst-free growth of GaN nanowires on Al₂O₃(0001) by plasma-assisted molecular beam epitaxy was achieved using the following substrate surface treatments: (a) deposition of a Si_xN_y layer on nitridated Al₂O₃ surface, and (b) deposition of Si on bare Al₂O₃ surface. The nanostructure of GaN nanowires and GaN/Al₂O₃ interfaces was explored by quantitative high-resolution transmission electron microscopy and related analytical methods. Spontaneous growth of GaN nanowires was realized on the amorphous Si_xN_y layer, while a discontinuous crystalline zone in contact with Al₂O₃ was identified as partially strained AlN. Subsequently, GaN nanowires were directly grown on top of Al₂O₃ among stress-free Si islands. The orientation relation of these islands with the substrate was the [112]($\overline{1}\overline{1}1$)Si//[$1\overline{1}00$](0001)Al₂O₃, providing the minimum lattice misfit between the two structures. Increasing the Si deposition time a higher density of Si islands was realized, leading to non-coalesced nanowires of lower density and better structural quality. Hence, the presence of Si islands induced a mask-like effect on the nucleation of GaN nanowires that can be exploited for a controlled catalyst-free growth of nanowires.     

Efficient Field Emission from Vertically Aligned Cu2O1‐δ(111) Nanostructure Influenced by Oxygen Vacancy

In the architecture described, cuprous oxide (Cu₂O) is tamed to be highly (111) plane oriented nanostructure through adjusting the deposition postulate by glancing angle deposition technique. In the controlled atmosphere oxygen vacancy is introduced into the Cu₂O crystal subsequently fostering an impurity energy state (E_im) close to the conduction band. Our model of Cu₂O electronic structure using density functional theory suggests that oxygen vacancies enhance the electron donating ability because of unshared d‐electrons of Cu atoms (nearest to the vacancy site), allowing to pin the work function energy level around 0.28 eV compared to the bulk. This result is also complemented by Kelvin probe force microscopy analysis and X‐ray photoelectron spectroscopy method. Oxygen vacancy in Cu₂O (Cu₂O_1‐δ) exhibits promising field emission properties with interesting field electron tunneling behavior at different applied fields. The films show very low turn‐on and threshold voltages of value 0.8 and 2.4 V μm^?1 respectively which is influenced by the oxygen vacancy. Here, a correlation between the work function modulation due to the oxygen vacancy and enhancement of field emission of Cu₂O_1–δ nanostructure is demonstrated. This work reveals a promising new vision for Cu₂O as a low power field emitter device.     

退火对硫化后的P+ 型InP表面性能的影响

文章采用光致发光（PL）测试和X射线光电能谱（XPS）测试相结合的方法,对硫化前后P＋型InP的PL光谱以及表面化学成分进行了分析,得到了退火对硫化过的InP表面性能的影响结果;同时得到了S在InP表面所成键的结构以及稳定性随温度的变化的情况.     

利用二次谐波产生研究Al2O3/Al(111)表面的动力学变化

主要介绍了当激光入射到单晶金属Al2O3／Al(111)表面时将发生二次谐波产生(SHG)现象的实验装置和实验方法,利用该装置可以研究SHG和从Al2O3／Al(111)表面反射的SHG在空间各向异性的变化情况,从而可以探测Al2O3／Al(111)表面结构对称性。实验中发现,当脉冲激光功率在2×106 W／cm2-9．6×106W／cm2范围内变化时,没有检测到SHG信号的各向异性变化;当使用P-极化泵浦激光时,发现Al2O3／Al(111)样品绕法线旋转360度时,P-极化的SHG信号在空间三个方向上呈现最大值相等;当使用脉冲强度为12×100 W／cm2的1064 nm P-极化泵浦激光时, Al2O3／Al(111)表面被损坏,损坏后的表面其SHG信号并不呈现对称的各向异性变化,当使用脉冲强度为11×106W／cm2的1064 nm P-极化泵浦激光时产生表面退火现象,从退火表面所产生的反射532 nm P-极化SHG信号中发现,SHG信号呈现衰减的各向异性成分。     

Nucleation of ZnTe on the As-Terminated Si(112) Surface

We employ a suite of surface analysis techniques that probe the outermost ZnTe/As-Si(112) surface to generate an understanding of the initial stages of the heteroepitaxial HgCdTe/CdTe/ZnTe/As-Si(112) layer formation. Ion scattering spectroscopy (ISS), reflection-high energy electron diffraction (RHEED), along with nondestructive depth profiles by angle-resolved x-ray photoelectron spectroscopy (XPS) are successfully applied to clarify and support the nucleation stages of ZnTe formation on the As-terminated Si(112) substrate. Data indicate a slow growth of the first ZnTe layer. In addition, no evidence of thick ZnTe island formation exists. The current ZnTe formation process generates full coverage on the Si(112) surface after six to nine MBE cycles. In order to fully understand the details of the ZnTe nucleation process on the Si(112) substrate, we present an inelastic background analysis with the Tougaard method to study surface morphology.     

Study on ALD In2S3/Cu(In,Ga)Se2 interface formation

The formation of the interface between In₂S₃ grown by atomic layer deposition (ALD) and co‐evaporated Cu(In,Ga)Se₂ (CIGS) has been studied by X‐ray and UV photoelectron spectroscopy. The valence band offset at 160°C ALD substrate temperature was determined as −1·2±0·2 eV for CIGS deposited on soda‐lime glass substrates and −1·4±0·2 eV when a Na barrier substrate was used. Wavelength dependent complex refractive index of In₂S₃ grown directly on glass was determined from inversion of reflectance and transmittance spectra. From these data, an indirect optical bandgap of 2·08±0·05 eV was deduced, independent of film thickness, of substrate temperature and of Na content. CIGS solar cells with ALD In₂S₃ buffer layers were fabricated. Highest device efficiency of 12·1% was obtained at a substrate temperature of 120°C. Using the bandgap obtained for In₂S₃ on glass and a 1·15±0·05 eV bandgap determined for the bulk of the CIGS absorber, the conduction band offset at the buffer interface was estimated as −0·25±0·2 eV (−0·45±0·2 eV) for Na‐containing (Na‐free) CIGS. Copyright © 2005 John Wiley & Sons, Ltd.