一种小型化毫米波延时组件的实现

介绍了毫米波延时组件的设计难点,并提出了相应的解决方案。在此基础上,设计并实现了一种Ka波段集成七位延时与增益补偿功能的延时组件。根据实测结果,4GHz带宽内实现了幅度带内平坦度≤±1.0 dB,延时相位精度≤±10°,延时幅度精度≤±1.0 dB,相位非线性≤20°,驻波≤1.8。     

一种高精度幅相调理机制

该文阐述了一种高精度幅相调理机制(APMM),具有高可靠、高线性幅相特性及快速设计等优点。通过逐级联试,可使任意多通道模组的通道间相位差一致性≤±1°,任意功能单元间幅度一致性≤±1 dB,相位一致性≤±1.5°,任意功能单元的绝对延时精度≤±1.5 ps,多倍频相对带宽的幅度平坦度≤±1 dB。该调理机制可应用于任意电子系统、任意信道化设计、任意功能电路或芯片设计等。通过大量工程应用,并得以证实,该方案切实可靠地改善了目前各类射频系统或模块单元的幅相特性。     

C 波段小型化高精度驱动延时组件的研制

介绍了延时线在雷达中的工作原理,分析了延迟时间误差与延迟幅度误差对信号合成的影响。针对驱动延时组件小型化、高精度设计的难点进行了评估,并提出采用微波多层印制电路实现小型化、采用新型调相电路与衰减电路解决延时高精度的设计方案。在此基础上,设计并实现了一种集成延时、放大与功率分配/合成功能的驱动延时组件。根据驱动延时组件各态收发指标测试结果,幅度带内平坦度优于±0.4 d B,延时相位精度≤±5°,延时幅度精度≤±0.5 d B。     

K频段64元瓦片式接收组件设计

基于相控阵系统高集成、低剖面的应用需求，研制了K频段64元瓦片式接收组件。通过高密度集成的三维设计思路，将64元接收通道按照矩形栅格进行阵列化排列，各功能电路横向布局、纵向集成，实现了组件的低剖面特性。对组件的关键电路设计、结构设计、热设计进行了详细介绍。通过实物测试，该接收组件单通道增益≥20 dB,噪声系数≤4.8 dB;每个通道可独立实现6位移相、6位衰减功能，移相均方根误差(RMS)精度≤6°,衰减RMS精度≤1.5 dB。组件尺寸为52 mm×52 mm×14 mm,质量小于150 g。该接收组件具有标准化的构架，可灵活地实现大规模阵列扩展。     

X波段高功率高效率延时组件设计

为了实现相控阵雷达的宽带宽角扫描,用延时器处理取代常规相控阵雷达中的移相器是一种有效的技术措施。文中研制了一种X波段高功率高效率延时组件,利用幅度/相位自补偿电路改善寄生调幅和寄生调相,通过增益链路分配和C类线性功放模式,实现了组件高效率和高增益,同时利用电磁仿真与热传输路径分析验证了可靠性,对相控阵雷达收发组件的设计和制造具有参考价值。根据实测结果,所有组件发射输出功率高于5 W,效率高于46.3%,延时相位精度优于±10°,延时寄生调幅低于±1.3 dB,组件接收增益为23.3±0.6 dB。     

宽带GaAs FET放大器的计算机辅助设计

本文介绍了一种可用于宽带GaAs FET放大器设计的计算机辅助设计方法。给出了两种宽带GaAsFET放大器的设计与实测结果。4-8GHz放大器,功率增益G_p=33±1.5dB,带内噪声系数F_n≤3.7dB,8-12GHz放大器,G_p=30±1.5dB,F_n≤6dB。     

五公分GaAsFET低噪声放大器

研制了5.3～5.9GHzGaAsFET低噪声集成放大器。小批量生产后达到的指标是:典型值:增益=22dB;噪声系数<3.5dB;带内增益起伏<±0.75dB;最佳值:增益=24dB,噪声系数≤2.94dB(噪声系数值均含外接隔离器约0.3dB的插入损耗),带内增益起伏<±0.5dB。测量了高电平射频脉冲信号对GaAsFET放大器的影响,为放大器用于收发公用天线的系统中对防护器件的要求提供了初步依据。     

5~22GHz平坦高增益单片低噪声放大器

使用0.25μm G aA s PHEM T工艺技术,设计和制造了性能优良的5-22 GH z两级并联反馈单片低噪声放大器。在工作频率5-22 GH z内,测得增益G≥18 dB,带内增益波动ΔG≤±0.35 dB,噪声系数N F≤3.2 dB,输入输出驻波V SW R≤1.7,最小分贝压缩点输出功率P1dB≥10.5 dBm,电流增益效率达2.77 mA/dB。测试结果验证了设计的正确性。     

微波毫米波宽带单片低噪声放大器

推导了反馈电路理论,利用0.25μmGaAs PHEMT工艺,研制了两种并联反馈单片低噪声放大器。第一种放大器的工作频带为6～18GHz,测得增益G≥21dB,带内增益波动ΔG≤±1.0dB,噪声系数NF典型值为2.0dB,输入驻波VSWRin≤1.5,输出驻波VSWRout≤2.0,1分贝压缩点输出功率P1dB≥11dBm。第二种放大器的工作频带为26～40GHz,测得增益G≥17dB,噪声系数NF约为2.0dB,输入、输出驻波VSWR≤2.5,1分贝压缩点输出功率P1dB≥10dBm。两种电路的测试结果验证了设计的正确性。     

一体化Ka波段上变频组件

设计了一款集本振倍频链（有源二倍频器、带通滤波器、增益放大器）、上变频器和射频增益放大器等功能部件的集成Ka波段上变频组件,在方案设计的基础上完成了分部件电路的仿真计算,实现了集成一体化设计,并给出了加工版图,计算结果较好地满足了设计要求：变频增益≥10dB,增益平坦度≤±1dB,P-1dH≥5dBm,三阶交调30dBc,两端口驻波比≤2。电路采用混合集成电路实现,制作在R／T5880基板上,整个电路尺寸为52mm×47mm。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first