延迟锁相环控制模块的VLSI设计与实现

介绍了一种可用于DLL的控制模块,设计了控制模块的具体电路,并着重优化了控制算法,使其锁定速度快、支持的输入时钟信号频率范围大、延迟信号相位抖动小.采用SMIC 0.18 μm CMOS工艺库进行设计和实现.经仿真测试,电路工作范围可达到10 MHz～1 GHz,最大锁定周期为32个输入时钟周期,最大相位抖动小于28 ps.整个控制模块芯片面积为300 μm×350 μm.     

2.5Gbps/ch两通道并行时钟数据恢复电路

采用TSMC公司标准的0.18μm CMOS工艺,结合锁相环和延迟锁相环技术,设计并制作了一个全集成的2.5Gbps/ch并行时钟数据恢复电路.与传统并行数据恢复电路相比,该电路不需要本地参考时钟,并且恢复出的并行数据是位同步的.输入2路并行的231-1 PRBS数据,恢复出的2.5GHz时钟的均方抖动值为2.6ps,恢复出的两路2.5Gb/s数据的均方抖动值分别为3.3ps和3.4ps.     

2.5Gbps/ch两通道并行时钟数据恢复电路

采用TSMC公司标准的0.18μm CMOS工艺,结合锁相环和延迟锁相环技术,设计并制作了一个全集成的2.5Gbps/ch并行时钟数据恢复电路.与传统并行数据恢复电路相比,该电路不需要本地参考时钟,并且恢复出的并行数据是位同步的.输入2路并行的231-1 PRBS数据,恢复出的2.5GHz时钟的均方抖动值为2.6ps,恢复出的两路2.5Gb/s数据的均方抖动值分别为3.3ps和3.4ps.     

单光子探测盖革雪崩焦平面用低抖动多相位时钟电路设计

针对单光子探测盖革雪崩焦平面读出电路应用,基于全局共享延迟锁相环和2维H型时钟树网络,该文设计一款低抖动多相位时钟电路.延迟锁相环采用8相位压控延迟链、双边沿触发型鉴相器和启动-复位模块,引入差分电荷泵结构,减小充放电流失配,降低时钟抖动.采用H时钟树结构,减小大规模电路芯片传输路径不对称引起的相位差异,确保多路分相时钟等延迟到达像素单元.采用0.18 mm CMOS工艺流片,测试结果表明,延迟锁相环锁定频率范围150～400 MHz.锁定范围内,相位噪声低于–127 dBc/Hz@1 MHz,时钟RMS抖动低于2.5 ps,静态相位误差低于65 ps.     

CMOS集成时钟恢复电路设计

该文设计了一个集成时钟恢复电路,恢复时钟的频率为125MHz。通过采用电流相减技术等补偿措施,很大程度上降低了振荡器的压控增益,从而在不影响电路性能的前提下大大地降低了芯片面积。本设计采用0.25m标准CMOS工艺实现,有效芯片面积小于0.2mm2,功耗仅10mW。在各种工艺角、温度以及供电电源条件下的仿真结果均表明,该电路相位偏差小于200ps,时钟抖动的峰峰值小于150ps。该文对一个采用本时钟恢复电路的100MHz PHY系统进行流片、测试,验证了时钟恢复电路能够正常工作。     

基于DLL的3.5GHz时钟校准电路设计

设计了一种基于某65 nm CMOS工艺的3.5 GHz时钟校准电路,应用于高速高精度DAC中。该电路采用延迟锁相环结构,优化DAC内部的数字和模拟通路时钟信号,使数据在3.5 GHz速率下完成正确转换,有效提高了系统时钟的稳定性。电源电压为1.2 V/3.3 V,时钟相位调节精度为2 ps/LSB,目标锁定相位可调,带有时钟占空比调制功能,最大功耗小于60 mW。     

一种低功耗倍频延迟锁相环设计

多相时钟是集成电路的关键模块之一,在模拟数字转换器(Analog-to-Digital Converter,ADC),或是时间数字转换器(Time-to-Digital Converter,TDC)等电路中有大量的应用.多相时钟通常由延迟锁相环(Delay-Locked Loop,DLL)与锁相环(Phase-Locked Loop,PLL)产生.然而传统DLL无法倍频,PLL会有抖动累积等问题.此外,DLL与PLL的功耗通常较大.针对这些问题,本文提出了一种低功耗防错锁倍频延迟锁相环(Multiplying Delay-Locked Loop,MDLL).该设计采用一种低功耗的电荷泵结构,以及能切换为压控振荡器的压控延迟线,使电路功能在DLL与PLL之间切换,在倍频的同时能够周期地消除抖动累积.同时加入了防错锁电路,以避免MDLL锁定在错误的频率.基于HHGrace 0.11μm COMS工艺进行了流片验证,芯片面积约为0.03 mm 2.测试结果表明,此电路能够将输入参考时钟倍频32倍输出,输出时钟频率范围为54.4 MHz-92.8 MHz,电路功耗为216μW–312μW.在输出时钟频率为80 MHz的情况下,均方根抖动为116.3ps(0.93%).     

一种用于高速流水线ADC的时钟管理器

文章设计了一种用于高速流水线ADC的时钟管理器,该电路以延迟锁相环(DLL)电路为核心,由偏置电路、时钟输入电路、50%占空比稳定电路和无交叠时钟电路构成。该电路用0.35μmBiCMOS工艺条件下cadence spectre仿真。由测量结果可知,时钟管理器可以实现70MHz~300MHz有效输出。在250MHz典型频率下测得峰值抖动为16ps,占空比为50%,功耗为47mW。仿真结果表明该时钟管理器具有高速度、高精度、低功耗的特点,适用于高速流水线ADC。     

一种应用于TDC的低抖动延迟锁相环电路设计

本文采用双延迟线和防错锁控制结构,结合对电荷泵等关键模块版图对称性的匹配控制,设计了一种针对（Time-to-Digital Converter,TDC）应用的宽动态锁定范围、低静态相位误差延迟锁相环（Delay-Locked Loop,DLL）电路.基于TSMC 0.35μm CMOS工艺,完成了电路的仿真和流片验证.测试结果表明,DLL频率锁定范围为40MHz-200MHz;静态相位误差161ps@125MHz;在无噪声输入的理想时钟驱动下,200MHz频率点下的峰-峰值抖动最大为85.3ps,均方根抖动最大为9.44ps,可满足亚纳秒级时间分辨的TDC应用需求.     

基于防错锁控制结构的延迟锁相环设计

本文提出了一种防错锁控制结构,有效的解决了延迟锁相环教学和实践过程中出现的死锁定或谐波锁定等问题。基于0.18 μm CMOS工艺,完成了电路设计、版图设计以及后仿真。后仿真结果表明,在理想的时钟驱动下, 延迟锁相环在能准确锁定,确定性抖动为3.82 ps,自身随机性抖动为2 ps,可提供低抖动多相位的时钟。本文有助于学生理解掌握延迟锁相环精度和速度等设计要点,具有一定的教学指导意义。     

A dual-loop delay-locked loop using multiple voltage-controlleddelay lines

This paper describes a dual-loop delay-locked loop (DLL) which overcomes the problem of a limited delay range by using multiple voltage-controlled delay lines (VCDLs). A reference loop generates quadrature clocks, which are then delayed with controllable amounts by four VCDLs and multiplexed to generate the output clock in a main loop. This architecture enables the DLL to emulate the infinite-length VCDL with multiple finite-length VCDLs. The DLL incorporates a replica biasing circuit for low-jitter characteristics and a duty cycle corrector immune to prevalent process mismatches. A test chip has been fabricated using a 0.25-μm CMOS process. At 400 MHz, the peak-to-peak jitter with a quiet 2.5-V supply is 54 ps, and the supply-noise sensitivity is 0.32 ps/mV     

1.2V低功耗时钟发生器设计

基于整数分频锁相环结构实现的时钟发生器,该时钟发生器采用低功耗、低抖动技术,在SMIC 65 nm CMOS工艺上实现。电路使用1.2 V单一电源电压,并在片上集成了环路滤波器。其中,振荡器为电流控制、全差分结构的五级环形振荡器。该信号发生器可以产生的时钟频率范围为12.5～800MHz,工作在800 MHz时所需的功耗为1.54 mW,输出时钟的周期抖动为:pk-pk=75 ps,rms=8.6 ps;Cycle-to-Cycle抖动为:pk-pk=132 ps,rms=14.1 ps。电路的面积为84μm2。     

Impact of NBTI induced variations on delay locked loop multi-phase clock generator

Negative bias temperature instability (NBTI) is a serious reliability concern for both analog and digital CMOS VLSI circuits. The shift in threshold voltage and reduction in drain current due to NBTI in p-channel MOSFETs are time, bias and temperature dependent. The degradation of the PMOS at any critical nodes in the circuit leads to the failure of the circuit immediately or in few months/year. The Delay-Locked-Loop (DLL) which is used as multi-phase clock generator for microprocessors, frequency synthesizers, time-to-digital converter (TDC) etc. reduces the phase error between output and reference clock until it is locked. The delay variations due to process, voltage and temperature fluctuations are governed by its feedback system. At start-up, the phase shift of the output clock should lie between 0.5 and 1.5 times the time period of the reference clock to achieve regular locking. The deviations from the above criteria due to NBTI degradation directly affect the control system and lead to erroneous locking. The NBTI-induced time-dependent variation in PMOS of the delay stage in voltage-controlled delay line (VCDL) of DLL affects the delay in each stage of VCDL and propagates as phase error to the output clock. This paper analyzes the impact of NBTI-induced time-dependent variations in Delay-Locked-Loop (DLL) based clock generators for the first time. The DLL is designed with 180 nm technologies with working frequency range from 75 MHz to 220 MHz. The time dependent variations in VCDL, the most sensitive blocks of DLL, are analyzed. It is observed that these time-dependent variations increase the phase error and the working of DLL is severely affected at the rearmost end of frequency range. The output clock gets deviated and observed to be locked late after π/2 or π radians from the nominal lock. It is essential to prevent DLL locking to an incorrect delay or false lock and to bring the output clock back to the correct position. An adaptive body bias circuit is proposed in this paper to reduce the impact of NBTI degradation and thereby to prevent erroneous locking in DLL.     

A 3–8 GHz Delay-Locked Loop With Cycle Jitter Calibration

A 3–8 GHz delay-locked loop (DLL) with cycle jitter calibration is presented. To lower the operation frequency of a voltage-controlled delay line (VCDL), this DLL adopts the dividers, an edge combiner, and the multiple VCDLs. A duty cycle correction circuit is presented to maintain the output duty cycle of 50%. This DLL has been fabricated in 90-nm CMOS process. The measured peak-to-peak jitters at 8 GHz are 11.44 and 6.67 ps before and after calibration, respectively. The power dissipation at 8 GHz is 18 mW for a supply voltage of 1.2 V, and the measured output duty cycle variation is less than 3%.      

A DLL-Based Variable-Phase Clock Buffer

A variable-phase clock buffer that uses a delay-locked loop (DLL) is presented. The variable-phase clock is achieved by switching the multiphase outputs of the divider in the DLL. The output phase is adjustable in a step of where pi/n is the ratio of two voltage-controlled delay lines in the proposed circuit. The prototype has been fabricated in a 0.18- CMOS process to realize the output phases of 0deg, 90deg, 180deg, and 270deg. The corresponding measured phase error is 3.24deg, 3.46deg, 3.89deg, and 1.94deg, respectively. The measured root-mean-squared jitter is 1.81 ps. The clock buffer consumes 67 mW including I/O circuits from a single 1.8-V supply at 600 MHz.     

A VCDL-based 60-760-MHz dual-loop DLL with infinite phase-shift capability and adaptive-bandwidth scheme

A dual-loop delay-locked loop (DLL) was implemented by using an analog voltage-controlled delay line (VCDL) for low jitter. An infinite phase-shift capability with seamless phase change was achieved by adding a look-ahead VCDL. A low jitter was achieved for the entire input frequency lock range from 60 to 760 MHz by using the adaptive bandwidth scheme in both reference and fine loops. A wide input-frequency lock range was achieved due to the combined effects of the dual-loop architecture and the extra phase detector of the reference DLL. The extra phase detector eliminated the constraint on the initial VCDL delay for DLL to be locked. Measurements on the fabricated chip by using a 0.18-/spl mu/m CMOS process showed a power consumption of 63 mW at 700 MHz, an active chip area of 370/spl times/510 /spl mu/m/sup 2/, and peak-to-peak jitters of 28 and 39 ps at the 700-MHz synchronous and plesiochronous operations, respectively.     

单光子探测盖革雪崩焦平面用低抖动多相位时钟电路设计

针对单光子探测盖革雪崩焦平面读出电路应用,基于全局共享延迟锁相环和2维H型时钟树网络,该文设计一款低抖动多相位时钟电路.延迟锁相环采用8相位压控延迟链、双边沿触发型鉴相器和启动-复位模块,引入差分电荷泵结构,减小充放电流失配,降低时钟抖动.采用H时钟树结构,减小大规模电路芯片传输路径不对称引起的相位差异,确保多路分相时...     

全数字延时锁定环及其应用

介绍了一种区别于锁相环(PLL)和基于压控延迟线(VCDL)的延时锁定环(DLL)、全部由纯数字电路实现的DLL电路.该电路用于消除时钟时延,全数字的结构使其无条件稳定,不会累积相位误差,而且具有良好的噪声敏感度、较低的功耗和抖动性能.使其在时延补偿和时钟调整的应用中具有优势,并可全部嵌入单个芯片中.文中分析了全数字DLL的工作原理及其结构,给出了其在现场可编程门阵列(FPGA)中的应用.     

Low jitter and multirate clock and data recovery circuit using a MSADLL for chip-to-chip interconnection

A fully integrated clock and data recovery circuit (CDR) using a multiplying shifted-averaging delay locked loop and a rate-detection circuit is presented. It can achieve wide range and low jitter operation. A duty-cycle-insensitive phase detector is also proposed to mitigate the dependency on clock duty cycle variations. The experimental prototype has been fabricated in a 0.25-/spl mu/m 1P5M CMOS technology and occupies an active area of 2.89 mm/sup 2/. The measured CDR could operate from 125 Mb/s to 2.0 Gb/s with a bit error rate better than 10/sup -12/ from a 2.5-V supply. Over the entire operating frequency range, the maximum rms jitter of the recovered clock is less than 4 ps.     

65-nm CMOS Voltage-to-Time Converter for 5-GS/s Time-Based ADCs

This paper discusses a voltage-to-time converter (VTC) designed for use in a time-based analog-to-digital converter. The VTC considered in this work is based on a starved-inverter topology. Linearity, delay, and jitter of the VTC are analyzed to facilitate a physical understanding of the circuit performance. The design is experimentally verified in a 65-nm CMOS technology. Measurement results show that the VTC, operating with a 5-GHz clock, has an output delay range of \(\pm 25\,{\text{ ps }}\), 4.4 effective number of bits (ENOB), and output jitter of \(0.5\,\text{ ps }\) RMS while consuming 4 mW of power. The input effective resolution bandwidth (ERBW) of the VTC is measured to be 4.1 GHz, over which the ENOB remains above 3.5 bits. The same VTC, operating with a 7.5-GHz clock, consumes 9.7 mW of power from a 1.2-V supply, has ENOB of >3.8 bits, ERBW of >7 GHz, output jitter of \(0.4\,\text{ ps }\) RMS, and output delay range of \(\pm 25\,\text{ ps }\). The VTC achieves the widest input bandwidth of any VTC reported to date.