薄膜太阳能电池

薄膜太阳能电池作为一种新的能源材料正在得到迅速的发展和进步,主要介绍了非晶硅、多晶硅薄膜太阳能电池以及CIGS薄膜太阳能电池,通过比较这几种薄膜太阳能电池各自的特点阐述了各种薄膜太阳能电池的发展状况.     

电沉积制备CIS薄膜太阳能电池材料

电沉积法制备CIS薄膜因具有可实现大面积制备,成本低,制备效率高以及污染小等优点而得到了重点研究,是最有应用前途的薄膜太阳能电池材料之一.概述了电沉积制备CIS薄膜太阳能电池材料的原理、制备工艺,同时介绍了CuInSe2薄膜太阳能电池材料的发展概况.     

基于聚噻吩衍生物的异质结薄膜太阳能电池

近年来聚噻吩衍生物作为电子给体材料的异质结薄膜成为国内外研究的热点.讨论了异质结薄膜太阳能电池的工作原理,重点分析了材料、混合比例、制作工艺等对聚噻吩衍生物异质结薄膜太阳能电池性能的影响,并指出了今后聚噻吩衍生物异质结薄膜太阳能电池的发展方向.     

制备硅薄膜太阳能电池的先进技术与实验研究

介绍了Si薄膜太阳能电池的材料与结构,重点介绍了几种叠层薄膜太阳能电池,详细阐述了近年发展的用于制备低成本、高效率Si薄膜太阳能电池的技术与最新的实验研究成果,其中高温沉积法、低温沉积法、层转移法尤为重要,展望了Si薄膜太阳能电池未来的技术发展和科研方向.三叠层薄膜太阳能电池是有发展前景的产品之一,更多叠层的薄膜太阳能电池与量子点叠层薄膜太阳能电池将长期作为实验研究的热门课题.     

薄膜太阳能电池的技术特点及前景展望

本文着重阐述了非晶硅薄膜电池、多晶硅薄膜电池、铜铟硒系薄膜太阳能电池以及染料敏化二氧化钛薄膜太阳能电池生产技术方法以及研究方向，特别介绍了一些薄膜太阳能电池的实验室样品和组件的最高光电转化效率。并从材料、工艺与转换效率等方面讨论了它们的优势和不足之处。同时介绍了国内外薄膜太阳电池研究的进展，展望了薄膜太阳能电池的发展前景。     

新型铜硫系薄膜太阳能电池材料制备的研究进展

薄膜太阳能电池提供了低成本、大面积的无碳发电应用前景,迅猛发展的纳米科技为高转换效率薄膜太阳能电池的低成本制造提供了新途径。新型铜硫系半导体Cu_2ZnSnS_4(CZTS)薄膜材料具有禁带宽度与太阳辐射匹配性好、光吸收系数大、元素丰度大、价格便宜、无毒等优点,因此将成为最具发展前景的薄膜太阳能电池材料。讨论与分析了CZTS薄膜和纳米晶材料的制备及由这些材料制备绿色、低成本、高效率新型太阳能电池的研究进展。     

薄膜太阳能电池的进展和展望

薄膜太阳能电池因具有价格低、弱光性好、大面积自动化生产、柔性便携等优点,表现出极大的发展意义和良好的市场前景。目前光伏市场上薄膜太阳能电池主要分为硅基薄膜太阳能电池、碲化镉薄膜太阳能电池、铜铟镓硒薄膜太阳能电池三大类。本文介绍了三种薄膜太阳能电池的发展现状,指出了它们的优点和存在的主要问题,分析了学术界和产业界针对这些问题的解决方案,展望了其发展前景。     

染料敏化太阳能电池的研究进展

光导电极材料在染料敏化太阳能电池(DSSC)中起到关键作用,直接影响到太阳能电池的总效率,所以一直是DSSC研究的热点.介绍了DSSC的基本工作原理,概述了当前DSSC中最流行的TiO<,2>和ZnO两种薄膜光导电极材料的制备方法,并从结构、工艺和转换效率等方面对染料敏化TiO<,2>薄膜太阳能电池和染料敏化ZnO薄膜太阳能电池进行了介绍和讨论;同时简要介绍了目前研究非常热门的叠层染料敏化太阳电池的研究进程,最后展望了染料敏化太阳能电池的未来发展前景.     

CIGS薄膜太阳能电池吸收层制备工艺综述

CIGS薄膜太阳能电池具有高光吸收系数、高转化效率、高稳定性等优点,已经成为太阳能电池领域的研究热点。其小样品最高转化效率已达19.9%,可与多晶硅电池的转化效率(20.3%)媲美;其大面积电池组件转化效率一般在10%～15%范围内,根据各膜层材料组分及制备工艺的不同而有所变化。综述了CIGS薄膜太阳能电池吸收层的各种制备工艺及其产业化进程。     

薄膜太阳能电池的研究与应用进展

薄膜太阳能电池是全球光伏领域争相研发的焦点之一。介绍并探讨了目前最受瞩目的四大类薄膜太阳能电池的研究现状和应用进展。进而从产业化发展的角度,对各种薄膜太阳能电池的优缺点进行了简单评述。     

Thin-film solar cells

The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films (“micromorph cells”). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.     

Effects of RF power and pressure on performance of HF-PECVD silicon thin-film solar cells

High-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) is a widely applicable method of deposition over a large area at a high rate for fabricating silicon thin-film solar cells. This investigation presents the properties of hydrogenated amorphous silicon (a-Si:H) films and the preparation of highly-efficient p-i-n solar cells using an RF (27.1 MHz) excitation frequency. The influence of the power (10-40 W) and pressure (20-50 Pa) used during the deposition of absorber layers in p-i-n solar cells on the properties and mechanism of growth of the a-Si:H thin films and the solar cells is studied. The a-Si:H thin films prepared under various deposition conditions have widely varying deposition rates, optical-electronic properties and microstructures. When the deposition parameters were optimized, amorphous silicon-based thin-film silicon solar cells with efficiency of 7.6% were fabricated by HF-PECVD. These results are very encouraging for the future fabrication of highly-efficient thin-film solar cells by HF-PECVD.     

Opto-electronic properties of rough LP-CVD ZnO:B for use as TCO in thin-film silicon solar cells

Polycrystalline Boron-doped ZnO films deposited by low pressure chemical vapor deposition technique are developed for their use as transparent contacts for thin-film silicon solar cells. The size of the columnar grains that constitute the ZnO films is related to their light scattering capability, which has a direct influence on the current generation in thin-film silicon solar cells. Furthermore, if the doping level of the ZnO films is kept below 1 × 10²⁰ cm^− 3, the electron mobility can be drastically enhanced by growing large grains, and the free carrier absorption is reduced. All these considerations have been taken in account to develop ZnO films finely optimized for the fabrication of microcrystalline thin-film silicon solar cells. These TCO allow the achievement of solar cell conversion efficiencies close to 10%.     

Inorganic photovoltaics – Planar and nanostructured devices

Since its invention in the 1950s, semiconductor solar cell technology has evolved in great leaps and bounds. Solar power is now being considered as a serious leading contender for replacing fossil fuel based power generation. This article reviews the evolution and current state, and potential areas of near future research focus, of leading inorganic materials based solar cells, including bulk crystalline, amorphous thin-films, and nanomaterials based solar cells. Bulk crystalline silicon solar cells continue to dominate the solar power market, and continued efforts at device fabrication improvements, and device topology advancements are discussed. III–V compound semiconductor materials on c-Si for solar power generation are also reviewed. Developments in thin-film based solar cells are reviewed, with a focus on amorphous silicon, copper zinc tin sulfide, cadmium telluride, as well as nanostructured cadmium telluride. Recent developments in the use of nano-materials for solar power generation, including silicon and gallium arsenide nanowires, are also reviewed.     

Broadband enhancement in thin-film amorphous silicon solar cells enabled by nucleated silver nanoparticles

Recently plasmonic effects have gained tremendous interest in solar cell research because they are deemed to be able to dramatically boost the efficiency of thin-film solar cells. However, despite of the intensive efforts, the desired broadband enhancement, which is critical for real device performance improvement, has yet been achieved with simple fabrication and integration methods appreciated by the solar industry. We propose in this paper a novel idea of using nucleated silver nanoparticles to effectively scatter light in a broadband wavelength range to realize pronounced absorption enhancement in the silicon absorbing layer. Since it does not require critical patterning, experimentally these tailored nanoparticles were achieved by the simple, low-cost and upscalable wet chemical synthesis method and integrated before the back contact layer of the amorphous silicon thin-film solar cells. The solar cells incorporated with 200 nm nucleated silver nanoparticles at 10% coverage density clearly demonstrate a broadband absorption enhancement and significant superior performance including a 14.3% enhancement in the short-circuit photocurrent density and a 23% enhancement in the energy conversion efficiency, compared with the randomly textured reference cells without nanoparticles. Among the measured plasmonic solar cells the highest efficiency achieved was 8.1%. The significant enhancement is mainly attributed to the broadband light scattering arising from the integration of the tailored nucleated silver nanoparticles.     

硅基单结太阳能电池的制备技术、缺陷及其性能的研究

首先综述了硅基单结太阳能电池的分类、制备方法及进展,介绍了化学气相沉积法、液相外延法(LPPE)、金属诱导结晶法(MIC)、磁控溅射法以及分子束外延法等各种硅基太阳能电池的制备方法,阐述了各种制备工艺的优缺点。其次,总结了单晶硅、多晶硅以及非晶硅太阳能电池在组织结构、缺陷方面的研究现状。最后,对硅基太阳能电池的机械、电学、光学以及光电性能等方面的研究进展做了论述。     

Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (µc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the µc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.     

Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films

We have fabricated thin-film solar cells using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5-µm-thick amorphous Si (a-Si) films deposited on Cr-coated glass substrates. High-pressure water-vapor annealing (HPWVA) is effective to improve the minority carrier lifetime of poly-Si films up to 10 µs long. Diode and solar cell characteristics can be seen only in the solar cells formed using poly-Si films after HPWVA, indicating the need for defect termination. The actual solar cell operation demonstrated indicates feasibility of using poly-Si films formed through FLA on glass substrates as a thin-film solar cell material.     

Epitaxially grown crystalline silicon thin-film solar cells reaching 16.5% efficiency with basic cell process

We report about the current performance of crystalline silicon thin-film (cSiTF) solar cells that are a very attractive alternative to conventional wafer-based silicon solar cells if sufficiently high cell efficiencies are achieved at acceptable cost of production. Applying a standard cell process (diffused POCl₃ emitter, front contacts by photolithography, no surface texture) to thin-films deposited with a lab-type reactor, specifically designed for high-throughput photovoltaic applications, on highly-doped Cz substrates we routinely obtain efficiencies above 16%. On 1 Ω cm FZ material substrates we reach efficiencies up to 18.0%, which is among the highest thin-film efficiencies ever reported. Additionally, a comparison to microelectronic-grade epitaxially grown cSiTF material underlines the excellent electrical quality of the epitaxial layers deposited.     

Towards sustainable photovoltaics: the search for new materials

The opportunities for photovoltaic (PV) solar energy conversion are reviewed in the context of projected world energy demands for the twenty-first century. Conventional single-crystal silicon solar cells are facing increasingly strong competition from thin-film solar cells based primarily on polycrystalline absorber materials, such as cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS). However, if PVs are to make a significant contribution to satisfy global energy requirements, issues of sustainability and cost will need to be addressed with increased urgency. There is a clear need to expand the range of materials and processes that is available for thin-film solar cell manufacture, placing particular emphasis on low-energy processing and sustainable non-toxic raw materials. The potential of new materials is exemplified by copper zinc tin sulphide, which is emerging as a viable alternative to the more toxic CdTe and the more expensive CIGS absorber materials.