MPEG-2到H.264转码中变换系数转换的优化算法

为采用优势明显的H.264编码,并避免已有的大量MPEG-2非线性视频编缉设备被淘汰,研究了从MPEG-2到H.264转码的转换技术,分析了目前的转换算法,提出了一种DCT系数到H.264整数变换(HT)系数转换的优化算法,并针对不同视频终端的应用需求,分别给出了保持图像空间分辨率不变和减半时的转换方法.实验表明,该算法可大幅度简化运算,并具有良好的实时性和视频质量.     

MPEG-2到AVS的Ⅰ帧变换域转码算法研究

提出了一种从MPEG-2到AVS的变换域Ⅰ帧快速转码算法,包括根据MPEG-2的DCT系数进行AVS帧内预测模式决策以及MPEG-2的DCT域到AVS整数变换域系数的快速转换.     

基于AVS的变换域帧内转码研究

根据MPEG-2与先进音视频编码（AVS,Advanced Coding of Audio and Video）标准在帧内预测中的不同点,介绍了一种基于变换域的帧内预测转码算法。新算法提出一种新的变换域转码结构,通过矩阵变换计算出AVS帧内预测的各种模式所对应的离散余弦变换（DCT,Discrete Cosine Transform）预测矩阵,推导出DCT域到AVS整数变换域的系数转换矩阵,同时给出DCT域内预测矩阵转换所需的运算量。实验结果表明,提出的帧内预测转换方法可以使计算复杂度降低50%,达到实时转码的要求。     

基于频域的MPEG-2码率转换技术及其码率控制策略

本文针对MPEG-2三种不同的预测方式,讨论了由参考帧中各块的DCT系数直接求得匹配块的DCT系数的方法,提出了频域内运动补偿的概念和基于频域的无偏视频码率转换技术.其码率控制策略使用了率失真优化求得各编码帧最佳的量化参数,并在G-BFOS算法的基础上对率失真优化的快速算法进行了进一步简化,在保证解的精度的前提下大大降低了计算复杂度.     

数字电视系统中的时间恢复和音视频同步

音视频同步是数字电视系统中实现实时解码的难点.讨论MPEG-2传输码流中的时间信息在音视频同步中的作用,详细介绍两种MPEG-2系统时序时钟的恢复方法--锁相环同步和异步置数法,给出处理音视频同步的实际方法,采用跳帧或者重复帧的纠正措施.其算法及几个主要电路设计适用于各种MPEG-2解码器.     

MPEG-2到MPEG-4转换编码中场-帧编码宏块转换及运动矢量优化算法

本文针对MPEG-2到MPEG-4转换编码中存在的场、帧编码宏块的不兼容问题,提出了场-帧编码宏块的转 换方法,并重点研究了场-帧转换后的运动矢量生成和优化问题,提出了一种基于残差图像DCT交流系数权重的自适应场 -帧运动矢量优化算法,实验表明其性能良好。     

MPEG-2与MPEG-4间转码的关键技术研究与实现

视频转码技术的出现，解决了视频通信领域数据在不同系统和设备间互通互连的问题。本文主要研究了MPEG-2到MPEG-4的转换编码，提出了运动矢量映射的转码结构，并对其中的关键算法进行了研究和实现。仿真试验表明，本文结构和算法在保证了转换编码灵活性的同时，具有较好的转码效率和鲁棒性。     

图像编码中的快速矢量变换算法

对图像采样数据进行矢量变换是实现图像矢量编码的重要组成部分.本文针对矢量变换算法中存在着由矢量构成矩阵的维数和变换核矩阵维数不相等的问题,提出了一种新的矢量变换算法并对该算法的解相关能力和能量压缩能力进行了统计分析.仿真实验结果表明该算法能较大地提高计算效率.     

MPEG-2到MPEG-4视频转编码中的快速运动矢量重估算法

本文讨论了MPEG-2到MPEG-4视频转编码问题，提出了两种快速运动矢量重估算法，分别基于空域和时域。我们的算法利用已有运动信息和DCT变换的直流系数进行运动估计，可明显减少运算量，提高编码速度，并获得了与全搜索算法接近的图像质量，可满足网络视频传输的实时要求。     

基于多分类的QDCT域大容量H.264/AVC视频信息隐藏算法

提出了一种在开环外的量化离散余弦变换(QDCT )系数上的H.264视频信息隐藏算法。在抑制漂移失真的条件下,对 邻块所需参考像素进行多组分类。其次,充分挖掘帧 内4×4亮度可用QDCT系数对,结合9进制方向调整(EMD)嵌入算法和 矩阵编码,实 现秘密信息的高容量嵌入。同时,通过最多修改一组QDCT系数保证了含密视频的质量。 此外,本文的信息提取算法不需要对含密视频完全解码,只需得到QDCT系数和帧内预测 模式,即可完全提取秘密信息。实验结果表明,本文算法在大幅度提高嵌入容量的同时,对 比特率和视频的质量影响不大。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.