使用DSC简化功率因数校正

本文描述了运用平均电流模式控制技术来设计和实现全数字功率因数校正（PFC）电路的方法。所述设计中数字信号控制器（DSc）的输入信号与通过升压电感的电流、升压转换器输出电容两端的直流母线电压,以及经整流的交流输入电压成正比,由DSC提供脉宽调制信号来控制PFC开关的导通时间。此技术旨在简化PFC,因而可整合于数字电源转换和电机控制应用中。     

改进型无桥Boost PFC软开关技术的研究

在分析无源无损缓冲电路拓扑结构的基础上,为了降低开关损耗,进一步提高效率,提出了在改进型无桥Boost PFC(Power Factor Correction,PFC)的基础上增加非最小电压应力电路网络。在理论分析和仿真验证的基础上,研制了一台300W的实验样机。结果表明改进后的无桥PFC电路拓扑具有通态损耗低、电流采样简单,不仅能实现开关管的零电压关断和零电流导通,同时续流二极管实现零电压导通和零电流软关断。     

一种最小电压应力的软开关无桥PFC技术研究

针对传统桥式整流升压功率因数校正(PFC)电路效率较低的缺点,提出了一种最小电压应力的软开关无桥PFC电路拓扑.在理论分析和仿真验证的基础上,研制了一台300 W的实验样机.结果表明,改进的无桥PFC电路拓扑具有通态损耗低、电流采样简单,能实现开关管零电压关断和零电流开通,同时实现整流二极管零电压导通和接近零电流软关断...     

采用双开关反激式拓扑的PFc／PWM控制器

FAN6920MR结合了一个功率因数校正（PFC）控制器和一个准谐振PWM控制器,实现了使用更少外部元件的高成本效益设计。在PFC部分,该器件使用受控导通时间技术以提供稳定的直流输出电压,实现正常的功率因数校正。     

集成电路与半导体

安森美公司PFC控制器安森美(ON Semiconductor)公司推出两款功率因数修正(PFC)控制器,针对输入功率在75W到3kW的应用而设计。NCP1653和NCP1601控制器非常适于如下设备电源的功率因数修正:电视、平板监视器、台式PC和笔记本适配器SMPS、离线充电器以及白色家电(如冰箱、洗衣机和干燥机)。NCP1653是一种频率固定、电流模式PFC控制器,其设计可以有效地驱动中、高功率(100W到3kW)连续导通模式(CCM)升压变换器。除了输出电压固定模式外,它还可以工作在输出电压跟随输入电压变化模式,称为跟随升压模式。其功能特性包括:平均电流模式…     

让高功率电源获得96％效率的交错式PFC控制器

如今很多大尺寸平板电视、高清电视,以及高端PC和入门级服务器的电源功率都超过300W,而以前具有高效率和低成本的BCMFPC转换器的最大功率约为300W。传统的临界导通模式（BCM）PFC控制器采用可变的开关频率,将电磁辐射分散到整个开关频率范围内,从而减小了EMI。MOSFET是零电流导通,不会在整流二极管上产生反向恢复损耗,所需的电感器较小,在检流电阻上的损耗也更少。     

L4984D：连续导通模式PFC预稳压器参考设计方案

ST公司的L4984D是一款线性调制确定关断时间控制电流型PFC控制器,在该控制器工作在连续导通模式时,作为升压PFC转换器具有线性调制确定关断时间控制属性允许工作在确定频率操作模式。该芯片采用10引脚的SoC封装,在连续导通模式下,工作在升压PFC预稳压状态时兼容EN61000-3-2和.JEIDA-MITI标准。     

升压型PFC调制器的低谐波失真设计

本文基于临界导通模式下的升压型PFC调制器,实现一种新颖的固定开启时间控制方式。控制方法通过补偿输入电容造成的输入电压和输入电流之间的相移,提高升压型PFC调制器的功率因数,有效抑制调制器的谐波失真。采用TSMC制程,实现100W升压型PFC调制器,在交流输入264V电压下测试总谐波失真为4.7%。     

专家系统PID在ZVZCS变换器中的应用

对移相全桥零电压零电流开关(Zero-Voltage and Zero-Current Switch,ZVZCS)变换器数学模型进行深入分析,提出用专家系统PID控制器实现对变换器开关管导通相序和占空比的改变。详细介绍了移相全桥ZVZCS变换器的拓扑结构、工作模态、小信号模型推导以及专家系统PID的设计规则,最后用Simulink仿真验证了算法的正确性和可行性,并对结果进行了分析讨论。     

基于“PFC＋LLC＋CV、CC”拓扑结构的HB-LED驱动电源设计

为提高HB-LED驱动电源的效率和功率因数,设计了基于＂PFC＋LLC＋CV、CC＂拓扑结构的HB-LED（150W）驱动电源,即采用TM模式PFC控制器L6563H与高压谐振控制器L6599组成LLC半桥谐振电路,可实现在全电压范围及全负载条件下主功率管的零电压开关（ZVS）和整流二极管的零电流开关（ZCS）控制,并由LM358放大器与TL431组成恒压（CV）、恒流（CC）控制电路。功率因数达到97%,整机效率92%以上。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.