用于U波段移动数字电视的宽带大动态范围高线性度射频前端

A wideband large dynamic range and high linearity U-band RF front-end for mobile DTV is introduced,and includes a noise-cancelling low-noise amplifier(LNA),an RF programmable gain amplifier(RFPGA) and a current communicating passive mixer.The noise/distortion cancelling structure and RC post-distortion compensation are employed to improve the linearity of the LNA.An RFPGA with five stages provides large dynamic range and fine gain resolution.A simple resistor voltage network in the passive mixer decreases the gate bias voltage of the mixing transistor,and optimum linearity and symmetrical mixing is obtained at the same time.The RF front-end is implemented in a 0.25 μm CMOS process.Tests show that it achieves an ⅡP3(third-order intercept point) of –17 dBm,a conversion gain of 39 dB,and a noise figure of 5.8 dB.The RFPGA achieves a dynamic range of –36.2 to 23.5 dB with a resolution of 0.32 dB.     

A wideband current-commutating passive mixer for multi-standard receivers in a 0.18 μm CMOS

This paper reports a wideband passive mixer for direct conversion multi-standard receivers.A brief comparison between current-commutating passive mixers and active mixers is presented.The effect of source and load impedance on the linearity of a mixer is analyzed.Specially,the impact of the input impedance of the transimpedance amplifier(TIA),which acts as the load impedance of a mixer,is investigated in detail.The analysis is verified by a passive mixer implemented with 0.18 m CMOS technology.The circuit is inductorless and can operate over a broad frequency range.On wafer measurements show that,with radio frequency(RF) ranges from 700 MHz to 2.3 GHz,the mixer achieves 21 dB of conversion voltage gain with a-1 dB intermediate frequency(IF) bandwidth of 10 MHz.The measured IIP3 is 9 dBm and the measured double-sideband noise figure(NF) is 10.6 dB at 10 MHz output.The chip occupies an area of 0.19 mm2 and drains a current of 5.5 mA from a 1.8 V supply.     

A wide band up-conversion mixer for cable television tuner

An up-conversion mixer implemented in a 0.35μm SiGe BiCMOS technology for a double conversion cable TV tuner is described, The mixer converts the 100MHz to 1000MHz band to the Intermediate Frequency of 1GHz above. The mixer meets the linearity and noise figure requirements for a TV tuner. The noise figure （IF） of 19.2-17.5dB, ldB compression of 12.1dBm, and gain of-1-0.7dB in the 900MHz band are achieved at a supply voltage of 5V. The power consumption is 47mW.     

A reconfigurable passive mixer for multimode multistandard receivers in 0.18 μm CMOS

This paper presents a reconfigurable quadrature passive mixer for multimode multistandard receivers. By using controllable transconductor and transimpedance-amplifier stages, the voltage conversion gain of the mixer is reconfigured according to the requirement of the selected communication standard Other characteristics such as noises figure, linearity and power consumption are also reconfigured consequently. The design concept is verified by implementing a quadrature passive mixer in 0.18 μm CMOS technology. On wafer measurement results show that, with the input radio frequency ranges from 700 MHz to 2.3 GHz, the mixer achieves a controllable voltage conversion gain from 4 to 22 dB with a step size of 6 dB. The measured maximum ⅡP3 is 8.5 dBm and the minimum noise figure is 8.0 dB. The consumed current for a single branch (I or Q) ranges from 3.1 to 5.6 mA from a 1.8 V supply voltage. The chip occupies an area of 0.71 mm² including pads.     

应用于DRM/DAB系统的高转换增益及线性度优化的新结构混频器

This paper focuses on a new design of a down-conversion mixer for a low-IF wideband receiver.Based on the folded structure and differential multiple gated transistor(DMGTR) technique,a novel quadrature mixer with a high conversion gain,a moderate linearity,and a moderate NF is proposed.The mixer is designed and implemented in a 0.18-m CMOS process,and can operate in a frequency range from 150 kHz to 1.5 GHz.The circuit performance is confirmed by both simulation and measurement results.The measurement results exhibit a peak conversion gain of 13.35 dB,a high third order input referred intercept point of 14.85 dBm,and a moderate single side band noise figure of 10.67 dB.Moreover,the whole quadrature mixer core occupies a compact die area of 0.122 mm2.It consumes a current of 3.96 mA(excluding the output buffers) under a single supply voltage of 1.8 V.     

A 0.18μm CMOS gain-switched LNA and mixer with large dynamic range

A 2.4GHz 0.18μm CMOS gain-switched single-end Low Noise Amplifier （LNA） and a passive mixer with no external balun for near-zero-IF （Intermediate Frequency）/RF （Radio Frequency） applications are described. The LNA, fabricated in the 0.18μm 1P6M CMOS technology, adopts a gain-switched technique to increase the linearity and enlarge the dynamic range. The mixer is an IQ-based passive topology. Measurements of the CMOS chip are performed on the FR-4 PCB and the input is matched to 50Ω. Combining LNA and mixer, the front-end measured performances in high gain state are： -15dB of Sll, 18.5dB of voltage gain, 4.6dB of noise figure, 15dBm of IIP3, 85dBm to -10dBm dynamic range. The full circuit drains 6mA from a 1.8V supply.     

Low power high gain gain-controlled LNA and mixer for GNSS receivers Wei Binbin(魏斌斌)1, Jiang Jinguang(江金光)1,2,3*

A low power high gain gain-controlled LNA ＋ mixer for GNSS receivers is reported. The high gain LNA is realized with a current source load. Its gain-controlled ability is achieved using a programmable bias circuit. Taking advantage of the high gain LNA, a high noise figure passive mixer is adopted. With the passive mixer, low power consumption and high voltage gain of the LNA ＋ mixer are achieved. To fully investigate the performance of this circuit, comparisons between a conventional LNA ＋ mixer, a previous low power LNA ＋ mixer, and the proposed LNA ＋ mixer are presented. The circuit is implemented in 0.18 #m mixed-signal CMOS technology. A 3.8 dB noise figure, an overall 45 dB converge gain and a 10 dB controlled gain range of the two stages are measured. The chip occupies 0.24 mm2 and consumes 2 mA current under 1.8 V supply.     

A low power high gain gain-controlled LNAC＋mixer for GNSS receivers

A low power high gain gain-controlled LNAC+mixer for GNSS receivers is reported. The high gain LNA is realized with a current source load.Its gain-controlled ability is achieved using a programmable bias circuit. Taking advantage of the high gain LNA, a high noise figure passive mixer is adopted. With the passive mixer, low power consumption and high voltage gain of the LNACmixer are achieved. To fully investigate the performance of this circuit, comparisons between a conventional LNAC+mixer, a previous low power LNAC+mixer, and the proposed LNAC+mixer are presented. The circuit is implemented in 0.18 m mixed-signal CMOS technology. A 3.8 dB noise figure, an overall 45 dB converge gain and a 10 dB controlled gain range of the two stages are measured. The chip occupies 0.24 mm2and consumes 2 mA current under 1.8 V supply.     

一种带有25%占空比本振采用130 nmCMOS工艺应用于LTE直接变频无声表滤波器接收机设计

A CMOS long-term evolution(LTE) direct convert receiver that eliminates the interstage SAW filter is presented.The receiver consists of a low noise variable gain transconductance amplifier(TCA),a quadrature passive current commutating mixer with a 25%duty-cycle LO,a trans-impedance amplifier(TIA),a 7th-order Chebyshev filter and programmable gain amplifiers(PGAs).A wide dynamic gain range is allocated in the RF and analog parts.A current commutating passive mixer with a 25%duty-cycle LO improves gain,noise,and linearity. An LPF based on a Tow-Thomas biquad suppresses out-of-band interference.Fabricated in a 0.13μm CMOS process,the receiver chain achieves a 107 dB maximum voltage gain,2.7 dB DSB NF(from PAD port),-11 dBm 11P3,and>+65 dBm UP2 after calibration,96 dB dynamic control range with 1 dB steps,less than 2%error vector magnitude(EVM) from 2.3 to 2.7 GHz.The total receiver(total I Q path) draws 89 mA from a 1.2-V LDO on chip supply.     

A New Low Voltage RF CMOS Mixer Design

A new architecture of CMOS low voltage downconversion mixer is presented.With 1.452GHz LO input and 1.45GHz RF input,simulation results show that the conversion gain is 15dB,IIP3 is －4.5dBm,NF is 17dB,the maximum transient power dissipation is 9.3mW，and DC power dissipation is 9.2mW.The mixer’s noise and linearity analyses are also presented.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.