共查询到16条相似文献,搜索用时 46 毫秒
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A new voltage programmed pixel circuit with top emission design for active-matrix organic lightemitting diode(AMOLED) displays is presented and verified by HSPICE simulations.The proposed pixel circuit consists of five poly-Si TFTs,and can effectively compensate for the threshold voltage variation of the driving TFT.Meanwhile,the proposed pixel circuit offers an AC driving mode for the OLED by the two adjacent pulse voltage sources,which can suppress the degradation of the OLED.Moreover,a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period. 相似文献
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This paper presents a new poly-Si pixel circuit employing AC driving mode for active matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit, which consists of one driving thin-film tran- sistor (TFT), three switching TFTs, and one storage capacitor, can effectively compensate for the threshold voltage variation in poly-Si and the OLED degradation. As there is no light emission, except for during the emitting period, and a small number of devices used in the proposed pixel circuit, a high contrast ratio and a high pixel aperture ratio can be easily achieved. Simulation results by SMART-SPICE software show that the non-uniformity of the OLED current for the proposed pixel circuit is significantly decreased (〈 10%) with an average value of 2.63%, while that of the conventional 2T1C is 103%. Thus the brightness uniformity of AMOLED displays can be improved by using the proposed pixel circuit. 相似文献
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Polycrystalline silicon(poly-Si) films were prepared by hot-wire chemical vapor deposition(HWCVD)at a low substrate temperature of 525 ℃. The influence of hydrogen on the epitaxial growth of ploy-Si films was investigated. Raman spectra show that the poly-Si films are fully crystallized at 525 ℃ with a different hydrogen dilution ratio(50%–91.7%). X-ray diffraction, grazing incidence X-ray diffraction and SEM images show that the poly-Si thin films present(100) preferred orientation on(100) c-Si substrate in the high hydrogen dilution condition.The P-type poly-Si film prepared with a hydrogen dilution ratio of 91.7% shows a hall mobility of 8.78 cm2/(V·s)with a carrier concentration of 1.3×1020 cm-3, which indicates that the epitaxial poly-Si film prepared by HWCVD has the possibility to be used in photovoltaic and TFT devices. 相似文献
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低温多晶硅-氧化物半导体混合集成(Lowtemperaturepolycrystallinesiliconandoxide,LTPO)的薄膜晶体管(thin-filmtransistor,TFT)背板技术融合了低温多晶硅和氧化物半导体TFT两者的优势,为低功耗、高性能显示以及功能化集成提供了新的发展机遇,获得了产业界和学术界的广泛关注。本文系统地总结和分析了LTPO相关技术与应用的研究进展以及面临的技术挑战。首先,讨论了分别针对液晶显示(Liquidcrystaldisplay,LCD)和有机发光二极管(Organiclightemittingdiode,OLED)显示的LTPO背板的集成方式,进一步总结分析了实现LTPO集成的器件结构和工艺挑战。此外,针对有源矩阵OLED显示,分析了LTPO技术用于设计兼容低帧率和高帧率驱动、具有内部补偿功能的像素电路的优势,以及在超低帧率(如1Hz)驱动情况下,TFT器件稳定性带来的影响和相关的补偿驱动方法。最后,对LTPO技术进一步发展的可能趋势进行了展望。 相似文献
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为研究热退火对太阳电池用多晶硅的影响,在750~1150℃,N2和O2环境下分别对硅片进行热处理.用傅里叶红外光谱仪和准稳态光电导衰减法测量退火前后的氧碳含量和少子寿命的变化.为了比较,对有相同氧碳含量的直拉硅片进行同样处理.结果发现:在多晶和单晶片中氧碳含量下降很小,意味着没有氧沉淀产生,晶界对碳行为影响不大.多晶硅片在N2和O2环境下,850、950和1150℃下退火,少子寿命都有很大提高,并且在O2中退火比N2中退火少子寿命上升得更多,可能由于在高温退火时大量杂质扩散到晶界处,减少了复合中心.另外,间隙硅原子填充了空位或复合中心从而导致寿命提高. 相似文献
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郭海成;周玮;陈荣盛;赵淑云;张猛;王文;陈树明;周南云 《液晶与显示》2013,28(4):471-478
提出了一种薄膜晶体管的新结构。这种新结构充分发挥了短沟道效应和多结效应的优点。通过器件模拟,验证了此种器件结构的物理机制。通过应用这种新结构,薄膜晶体管的阈值电压、伪亚阈值斜率、开关电流比和场效应迁移率都大幅改善,并且器件的热载流子和自加热可靠性也得到了极大的改善。 相似文献
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周雷;张立荣;宋小锋;吴为敬;姚若河 《液晶与显示》2013,28(3):386-391
提出了一种新型有源矩阵有机发光显示用电流编程型像素驱动电路。该像素电路由3个开关薄膜晶体管、一个驱动薄膜晶体管、一个存储电容和两条控制线构成。仿真结果表明,该4T1C像素电路可以补偿薄膜晶体管阈值电压的非均匀性以及有机发光二极管阈值电压的漂移,发光电流的平均非均匀性为4.63%。值得指出的是,同传统的电流编程型像素电路相比,本像素电路存储电容的接法可有效提高电路响应速度。此外,还分析了寄生电容对像素电路工作的影响。 相似文献
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A new voltage-programmed driving scheme named the mixed parallel addressing scheme is presented for AMOLED displays, in which one compensation interval can be divided into the first compensation frame and the consequent N-1 post-compensation frames without periods of initialization and threshold voltage detection. The proposed driving scheme has the advantages of both high speed and low driving power due to the mixture of the pipeline technology and the threshold voltage one-time detection technology. Corresponding to the proposed driving scheme, we also propose a new voltage-programmed compensation pixel circuit, which consists of five TFTs and two capacitors(5T2C). In-Zn-O thin-film transistors(IZO TFTs) are used to build the proposed 5T2C pixel circuit. It is shown that the non-uniformity of the proposed pixel circuit is considerably reduced compared with that of the conventional 2T1C pixel circuit. The number of frames(N) preserved in the proposed driving scheme are measured and can be up to 35 with the variation of the OLED current remaining in an acceptable range. Moreover, the proposed voltage-programmed driving scheme can be more valuable for an AMOLED display with high resolution, and may also be applied to other compensation pixel circuits. 相似文献