Single-Photon Detection System for Quantum Optics Applications

We describe the design and characterization of a fiber-coupled double-channel single-photon detection system based on superconducting single-photon detectors (SSPD), and its application for quantum optics experiments on semiconductor nanostructures. When operated at 2-K temperature, the system shows 10% quantum efficiency at 1.3-mum wavelength with dark count rate below 10 counts per second and timing resolution <100 ps. The short recovery time and absence of afterpulsing leads to counting frequencies as high as 40 MHz. Moreover, the low dark count rate allows operation in continuous mode (without gating). These characteristics are very attractive-as compared to InGaAs avalanche photodiodes-for quantum optics experiments at telecommunication wavelengths. We demonstrate the use of the system in time-correlated fluorescence spectroscopy of quantum wells and in the measurement of the intensity correlation function of light emitted by semiconductor quantum dots at 1300 nm.     

Superconducting Nanowire Single-Photon Detectors for Quantum Information and Communications

Superconducting nanowire single-photon detectors (SNSPDs or SSPD) are highly promising devices in the growing field of quantum information and communications technology. We have developed a practical SSPD system with our superconducting thin films and devices fabrication, optical coupling packaging, and cryogenic technology. The SSPD system consists of six-channel SSPD devices and a compact Gifford–McMahon (GM) cryocooler, and can operate continuously on 100 V ac power without the need for any cryogens. The SSPD devices were fabricated from high-quality niobium nitride (NbN) ultrathin films that were epitaxially grown on single-crystal MgO substrates. The packaged SSPD devices were temperature stabilized to 2.96 K $pm$ 10 mK. The system detection efficiency for an SSPD device with an area of 20 $times$ 20 $mu$m$^2$ was found to be 2.6% and 4.5% at wavelengths of 1550 and 1310 nm, respectively, at a dark count rate of 100 Hz, and a jitter of 100 ps full-width at half maximum. We also performed ultrafast BB84 quantum key distribution (QKD) field testing and entanglement-based QKD experiments using these SSPD devices.      

Progress in Silicon Single-Photon Avalanche Diodes

Silicon single-photon avalanche diodes (SPADs) are nowadays a solid-state alternative to photomultiplier tubes (PMTs) in single-photon counting (SPC) and time-correlated single-photon counting (TCSPC) over the visible spectral range up to 1-mum wavelength. SPADs implemented in planar technology compatible with CMOS circuits offer typical advantages of microelectronic devices (small size, ruggedness, low voltage, low power, etc.). Furthermore, they have inherently higher photon detection efficiency, since they do not rely on electron emission in vacuum from a photocathode as do PMTs, but instead on the internal photoelectric effect. However, PMTs offer much wider sensitive area, which greatly simplifies the design of optical systems; they also attain remarkable performance at high counting rate, and offer picosecond timing resolution with microchannel plate models. In order to make SPAD detectors more competitive in a broader range of SPC and TCSPC applications, it is necessary to face several issues in the semiconductor device design and technology. Such issues will be discussed in the context of the two possible approaches to such a challenge: employing a standard industrial high-voltage CMOS technology or developing a dedicated CMOS-compatible technology. Advances recently attained in the development of SPAD detectors will be outlined and discussed with reference to both single-element detectors and integrated detector arrays.     

Photon-timing detector module for single-molecule spectroscopy with 60-ps resolution

Advanced fluorescence measurements on single molecules demand single-photon detectors with high-quantum detection efficiency, low noise, and high time resolution. We have developed a compact (82/spl times/60/spl times/30 mm) and versatile single-photon timing module (SPTM), based on a planar epitaxial single photon avalanche diodes (SPAD) working with a monolithic integrated active quenching and active reset circuit (i-AQC) and cooled by a Peltier element. The main operating parameters are computer controlled via RS-232 interface and the photon counting rate can be continuously monitored. The photon detection efficiency is 45% at 500 nm with cooling at -15/spl deg/C, the dark counting rate is 5 c/s with SPAD operating at 5 V excess bias voltage, 10c/s operating at 10 V. The time resolution obtained with tightly focused illumination has 60-ps full-width at half-maximum. Comparative tests with the SPTM prototype and with an advanced commercially available photon counting module confirmed that the time resolution and sensitivity of the SPTM make it possible to resolve and measure even short lifetime components of a single molecule. The SPTM thus made possible experiments leading to a deeper insight into angstrom-scale structural changes of single-protein molecules.     

High-Performance InGaAs/InP Single-Photon Avalanche Photodiode

In_0.53Ga_0.47As/InP avalanche photodiodes with very low dark current have been characterized in gated mode for single-photon detection. A 40-mum-diameter single-photon avalanche diodes (SPAD) exhibited high single-photon detection efficiency (SPDE = 45% at 1.31 mum), low dark count rate (DCR = 12 kHz), and low noise-equivalent power (NEP=4.5X 10^-17W/Hz^1/2 W/Hz) at 200 K and 1.31 mum. A timing resolution of 140 ps was achieved with an SPDE of 45%. In addition, the dark current and DCR of a 4X4 SPAD array are reported.     

Analysis of Hot-Carrier Luminescence for Infrared Single-Photon Upconversion and Readout

We propose and analyze a new method for single-photon wavelength up-conversion using optical coupling between a primary infrared (IR) single-photon avalanche diode (SPAD) and a complementary metal oxide semiconductor (CMOS) silicon SPAD, which are fused through a silicon dioxide passivation layer. A primary IR photon induces an avalanche in the IR SPAD. The photons produced by hot-carrier recombination are subsequently sensed by the silicon SPAD, thus, allowing for on-die data processing. Because the devices are fused through their passivation layers, lattice mismatch issues between the semiconductor materials are avoided. We develop a model for calculating the conversion efficiency of the device, and use realistic device parameters to estimate up to 97% upconversion efficiency and 33% system efficiency, limited by the IR detector alone. The new scheme offers a low-cost means to manufacture dense IR-SPAD arrays, while significantly reducing their afterpulsing. We show that this high-speed compact method for upconverting IR photons is feasible and efficient.     

基于USB和FPGA实现的高速光子符合仪

本文基于USB2．0高速接口、大规模可编程器件FPGA及高速ECL逻辑电路,实现了一种高速多通道的光子符合设备。此设备能够同时统计八通道单光子检测器的所有可能的255种符合事件,且平均处理速度可达到每秒12．5M事件。在此速度下,可实现事件的间隔在13ns时不丢失的记录下来。同时,可利用高速USB接口,把采集到的原始通道数据直接送往主机进行存储、处理或实时监测统计结果。也可以利用FPGA先做预处理,然后再将预处理后的事件数据送往主机进行处理、分析或存储。     

Operational Analysis of a Quantum Dot Optically Gated Field-Effect Transistor as a Single-Photon Detector

We report on the operation of a novel single-photon detector, where a layer of self-assembled quantum dots (QDs) is used as an optically addressable floating gate in a GaAs/Al_0.2Ga_0.8As delta-doped field-effect transistor. Photogenerated holes charge the QDs, and subsequently, change the amount of current flowing through the channel by screening the internal gate field. The photoconductive gain associated with this process makes the structure extremely sensitive to light of the appropriate wavelength. We investigate the charge storage and resulting persistent photoconductivity by performing time-resolved measurements of the channel current and of the photoluminescence emitted from the QDs under laser illumination. In addition, we characterize the response of the detector, and investigate sources of photogenerated signals by using the Poisson statistics of laser light. The device exhibits time-gated, single-shot, single-photon sensitivity at a temperature of 4 K. It also exhibits a linear response, and detects photons absorbed in its dedicated absorption layer with an internal quantum efficiency (IQE) of up to (68 plusmn18)%. Given the noise of the detection system, the device is shown to operate with an IQE of (53 plusmn 11)% and dark counts of 0.003 counts per shot for a particular discriminator level.     

Compact CMOS active quenching/recharge circuit for SPAD arrays

Avalanche diodes operating in Geiger mode are able to detect single photon events. They can be employed to photon counting and time‐of‐flight estimation. In order to ensure proper operation of these devices, the avalanche current must be rapidly quenched, and, later on, the initial equilibrium must be restored. In this paper, we present an active quenching/recharge circuit specially designed to be integrated in the form of an array of single‐photon avalanche diode (SPAD) detectors. Active quenching and recharge provide benefits like an accurately controllable pulse width and afterpulsing reduction. In addition, this circuit yields one of the lowest reported area occupations and power consumptions. The quenching mechanism employed is based on a positive feedback loop that accelerates quenching right after sensing the avalanche current. We have employed a current starved inverter for the regulation of the hold‐off time, which is more compact than other reported controllable delay implementations. This circuit has been fabricated in a standard 0.18 µm complementary metal‐oxide‐semiconductor (CMOS) technology. The SPAD has a quasi‐circular shape of 12 µm diameter active area. The fill factor is about 11%. The measured time resolution of the detector is 187 ps. The photon‐detection efficiency (PDE) at 540 nm wavelength is about 5% at an excess voltage of 900 mV. The break‐down voltage is 10.3 V. A dark count rate of 19 kHz is measured at room temperature. Worst case post‐layout simulations show a 117 ps quenching and 280 ps restoring times. The dead time can be accurately tuned from 5 to 500 ns. The pulse‐width jitter is below 1.8 ns when dead time is set to 40 ns. Copyright © 2015 John Wiley & Sons, Ltd.     

基于国产InGaAs/InP APD的高速单光子探测

InGaAs/InP雪崩光电二极管(InGaAs/InP APD)是近红外单光子探测器的核心器件之一,其国产化已成为趋势.InGaAs/InP APD工作于1.25 GHz门控盖革模式下,由于APD本身的电容特性,单光子触发产生的雪崩电信号被尖峰噪声所湮没,采用低通滤波的方法可以将有效雪崩信号从尖峰噪声提取出来.为了探讨国产APD的参数水平,对不同温度不同探测效率下国产InGaAs/InP APD的暗计数及后脉冲概率,时间抖动性等相关性能参数进行了测量,并与国外数据进行了对比.当国产InGaAs/InP APD工作于-25 ℃,探测效率10 ％时,暗计数可低至9.9 X10 7/gatc,后脉冲仅为1.5这表明在InGaAs/InP APD这一领域,我国已接近国外水平,但仍有一定的进步空间.     

Limitations on building single-photon-resolution detection devices

Single-photon resolution (SPR) detectors can tell the difference between incoming wave packets of n and n+1 photons. Such devices are especially important for linear optical quantum computing with projective measurements. However, in this paper, I show that it is impossible to construct a photodetector with single-photon resolution when we are restricted to single-photon sources, linear optical elements, and projective measurements with standard (nonphoton-number discriminating) photodetectors. These devices include SPR detectors that sometimes fail to distinguish one- and two-photon inputs, but at the same time indicate this failure. PACS numbers: 42.79.Ta, 03.67.Hk, 42.79.Gn.     

High-efficiency photon-number detection for quantum information processing

The visible light photon counter (VLPC) features high quantum efficiency (QE) and low pulse height dispersion. These properties make it ideal for efficient photon-number state detection. The ability to perform efficient photon-number state detection is important in many quantum information processing applications, including recent proposals for performing quantum computation with linear optical elements. In this paper, we investigate the unique capabilities of the VLPC. The efficiency of the detector and cryogenic system is measured at 543 nm wavelengths to be 85%. A picosecond pulsed laser is then used to excite the detector with pulses having average photon numbers ranging from 3-5. The output of the VLPC is used to discriminate photon numbers in a pulse. The error probability for number state discrimination is an increasing function of the number of photons, due to buildup of multiplication noise. This puts an ultimate limit on the ability of the VLPC to do number state detection. For many applications, it is sufficient to discriminate between 1 and more than one detected photon. The VLPC can do this with 99% accuracy.     

A comprehensive circuit model for evaluating the response of silicon photomultipliers in continuous wave light regime

In this paper, a comprehensive dynamic model for silicon photomultiplier (SiPM) detectors is proposed to investigate their response when exposed to the light of any wavelength and relatively high intensity. Also, a procedure is proposed to perform reliable circuit-level simulations to predict the response of these detectors under various photon rates. The approach of dynamic model is based on the state of microcells in terms of overvoltage, elapsed recharging time, and their effect on the triggering probability with which the detector current and voltage can be accurately simulated. Using the proposed model, the SiPM behaviour is examined under various continuous illumination power in simulation. The effectiveness of the proposed model and the simulation method are verified by experimental results extracted from two SiPM detectors.     

Single Photon Counting Module Based on Large Area APD and Novel Logic Circuit for Quench and Reset Pulse Generation

We present the design, implementation, and characterization of a single-photon counting module (SPCM) based on large-area avalanche photodiode (APD) and new logic circuit based on TTL integrated circuits (ICs) for generating precise quench and reset delays. Low dark count rate, high linearity of 2 MHz, maximum dynamic range of 12 MHz, and minimum dead time of 35 ns have been achieved with 0.2 mm peltier-cooled single photon avalanche diode (SPAD) [model C30902S-DTC, Perkin Elmer Optoelectronics (PKI)]. The developed module was fiberized and tested for the detection of fluorescently labeled DNA sequences. Detection sensitivity at the level of single fluorescent molecule has been demonstrated.     

InGaAsP–InP Avalanche Photodiodes for Single Photon Detection

In this paper, we describe the design, characterization, and modeling of InGaAsP/InP avalanche diodes designed for single photon detection at wavelengths of 1.55 and 1.06 mum. Through experimental and theoretical work, we investigate critical performance parameters of these single photon avalanche diodes (SPADs), including dark count rate (DCR), photon detection efficiency (PDE), and afterpulsing. The models developed for the simulation of device performance provide good agreement with experimental results for all parameters studied. For 1.55-mum SPADs, we report the relationship between DCR and PDE for gated mode operation under a variety of operating conditions. We also describe in detail the dependence of afterpulsing effects on numerous operating conditions, and in particular, we demonstrate and explain a universal functional form that describes the dependence of DCR on hold-off time at any temperature. For 1.06-mum SPADs, we present the experimentally determined relationship between DCR and detection efficiency for free-running operation, as well as simulations complementing the experimental data.     

Cavity enhancement of Auger-suppressed detectors: a way to background-limited room-temperature operation in 3-14-/spl mu/m range

We consider the combination of nonequilibrium Auger suppression with cavity enhancement, this being either resonant cavity enhancement (RCE) or photonic crystal enhancement (PCE) as a means to suppress generation-recombination processes in intrinsic semiconductor-based long wavelength infrared detectors. The aim is to approach the background-limited operation of narrow-bandgap compound semiconductor photodetectors in the 3-14 /spl mu/m infrared wavelength range without cooling or possibly with slight cooling. Auger generation-recombination processes are suppressed utilizing exclusion, extraction, magnetoconcentration, or some of their combinations. The residual radiative recombination is removed by enclosing the detector active area into a cavity with a radiative shield (resonant cavity or photonic crystal) and using the benefits of reabsorption (photon recycling) to effectively increase radiative lifetime.     

All-Optical Modulation in a Silicon Waveguide Based on a Single-Photon Process

All-optical, low-power modulation is a major goal in photonics. Because of their high mode-field concentration and ease of manufacturing, nanoscale silicon waveguides offer an intriguing platform for photonics. So far, all-optical modulators built with silicon photonic circuits have relied on either two-photon absorption or the Kerr effect. Both effects are weak in silicon, and require extremely high (~5 W) peak optical power levels to achieve modulation. Here, we describe an all-optical Mach-Zehnder modulator based on a single-photon absorption (SPA) process, fabricated entirely in silicon. Our SPA modulator is based on a process by which a single photon at 1.55 mum is absorbed and an apparently free-carrier-mediated process causes an index shift in silicon, even though the photon energy does not exceed that of silicon's bandgap. We demonstrate all-optical modulation with a gate response of 1deg/mW at 0.5 Gb/s. This is over an order of magnitude more responsive than typical previously demonstrated devices. Even without resonant enhancement, further engineering may enable all optical modulation with less than 10 mW of gate power required for complete extinction, and speeds of 5 Gb/s or higher.     

Photon Number Resolving Detector at Telecom Wavelengths: Charge Integration Photon Detector (CIPD)

A photon number resolving detector (PNRD) is the basic device for many optics applications, especially for developing optical quantum computer. The implementation of universal nonlinear quantum gates typically requires high quantum efficiency and a wide dynamic range up to a few tens of photons. We have developed a charge integration photon detector (CIPD) as a PNRD with a quantum efficiency of 80% and multiphoton measuring over ten photons at telecom wavelengths. This detector has a signal-to-noise ratio of 3 and operates at 40 Hz at present. In this paper, we introduce the principle of our CIPD and report the capability of detecting different types of photon statistics with a high linearity to incident photon numbers.     

Optimization of GaAs amplification photodetectors for 700% quantum efficiency

We investigate the device physics of novel GaAs waveguide photodetectors with integrated photon multiplication. Such detectors have the potential to achieve simultaneously high saturation power, high speed, high responsivity, and quantum efficiencies above 100%. Our device design vertically combines a bulk photodetector ridge waveguide region with laterally confined quantum wells for amplification. Measurements on the first device generation show quantum efficiencies of only 56%. Advanced device simulation is employed to analyze these devices and to reveal performance limitations. Excellent agreement between simulations and measurements is obtained. Device design optimization is proposed, promising more than 700% efficiency.     

Homodyne In-Phase and Quadrature Detection of Weak Coherent States With Carrier Phase Tracking

We present a homodyne receiver structure for the detection of weak coherent states that uses sequential in-phase and quadrature measurements on the received optical signal. This receiver performs the optical carrier phase tracking requiring only a single balanced homodyne detector, by including a postdetection Costas-loop-type feedback, which additionally allows the use of suppressed carrier modulations in the received field, for efficient transmission. We report an experimental interferometric self-homodyne setup for the sequential detection of low photon number, binary phase-modulated optical signals that consist of strongly attenuated laser pulses by using a reference field as the local oscillator with an alternatively switched phase. A Costas loop postdetection subsystem is implemented in discrete time to perform fast real-time optical phase tracking. We also present the experimental results of the homodyne postdetection statistics for received BPSK signals with very low photon numbers, and compare them with the theoretical uncertainty limit. Finally, we conduct bit error rate measurements over a wide range of signal level, as well as a comparison with the standard quantum limit.