一种利用变通的离子散射谱测量进行浓度定标的二次离子质谱深度剖析…

本工作利用一台不作任何较大改动的ＣＡＭＥＣＡ－ＩＭＳ－３ｆ扇形磁铁型二次离子质谱仪对传统的离子散射谱（ＩＳＳ）分析技术进行了适当的变通，并对二次离子质谱分析（ＳＩＭＳ）的深度剖析谱进行了浓度定标。在保留ＳＩＭＳ分析高灵敏度、高深度分辨率的前提下，实现了对块体样品中的掺杂元素的ＳＩＭＳ定量深度剖析。通过与离子注入机标称的注入剂量及卢瑟福背散射的定量分析结果相比较，本方法的定量准确度一般好于１０％。而     

一种利用变通的离子散射谱测量进行浓度定标的二次离子质谱深度剖析定量方法

本工作利用一台不作任何较大改动的ＣＡＭＥＣＡ－ＩＭＳ－３ｆ扇形磁铁型二次离子质谱仪对传统的离子散射谱（ＩＳＳ）分析技术进行了适当的变通，并对二次离子质谱分析（ＳＩＭＳ）的深度剖析谱进行了浓度定标。在保留ＳＩＭＳ分析高灵敏度、高深度分辨率的前提下，实现了对块体样品中的掺杂元素的ＳＩＭＳ定量深度剖析。通过与离子注入机标称的注入剂量及卢瑟福背散射的定量分析结果相比较，本方法的定量准确度一般好于１０％。而精确度则好于５％。本文对该方法的背景、基本原理、实验方法，准确度及优缺点等进行了较详细的讨论。     

第十六届国际二次离子质谱学会议概况

第十六届国际二次离子质谱学会议（The 16th International Conference on Secondary Ion Mass Spectrometry,SIMSXVI）于2007年10月29日至11月2日在日本西部滨海城市金泽（Kanazawa）召开。     

煤的二次离子质谱数据解析1

作为全面认识煤的二次离子质谱数据与结果的开始,本文展示了典型煤样的低质量端的二次离子质谱图。利用了含四位小数的准高分辨数据在1至20质量数据区域确定了20种正离子组成;在1至31质量数区域确定了26种负离子组成。其中,简单氮氢离子─—H3N （m／z17．0272）、H4N （m／z18．0355）、H2N-（m／z16.0187）、HN-（m／z15．0107）,以及破氮组成离子CN-（m／z26．0036）等许多离子的组成,在煤的二次离子质谱及激光电高质谱中均属于首次检出。本文还对同类化学组成形成正离子与负离子的差异,以及对合同位素组成离子的同位素比值利用的潜力,进行了详细讨论。     

二次离子质谱和离子探针

二次离子质谱(Secondary Ion Mass Spectroscopy简称SIMS)和离子探针(Ion Microprobe Mass Analysis简称IMA)。二次离子质谱和离子探针是用隋性气体的离子束轰击试样表面,它与试样原子碰撞经复杂的相互作用后,电离出具有标识性的二次离子,分析这些离子的质荷比来确定表面的成分。这种方法在实际上对试样是有破坏作用的。     

分子二次离子质谱的进展

本文介绍近年来分子二次离子质谱的进展,着重对溅射过程、基质效应、应用和发展方向进行综述。     

离子阱质谱图的特性研究

离子阱检测器的原理不同于四极杆和磁质谱仪。采用ＩＮＣＯＴＭ库检索和概率匹配（ＰＢＭ）算法，把五百余种环境中常见有机化合物的离子阱质谱与国际上通用的ＮＢＳ质谱库及Ｗｉｌｅｙ质谱库中质谱数据相比，其结果是绝大部分化合物的离子阱质谱与经典质谱非常相似，极少数化合物的质谱二者之间存在某些差异，文中分析了可能导致差异的原因。     

第四届国际二次离子质谱学会议

第四届国际二次离子质谱学会议于1983年11月13日至19日本日本大阪举行,十八个国家和地区的约二百五十位代表参加了会议,我国由清华大学查良镇同志和复旦大学朱昂如同志组团首次参加,查良镇付教授还应邀担任了一个专题会议的主席。提交这次会议的论文共144篇,是历届会议中最多的一次。大会综述报告三篇:美国Cornell大学的G.H.Morrison教授在“二次离子质谱的图象处理”报告中就数据的采集、     

2005年全球华人二次离子质谱学及相关领域研讨会在台湾新竹成功举行

2005年全球华人二次离子质谱学及相关领域研讨会（2005 Worldwide Chinese Secondary Ion Mass Spectrometry＆Related Topic Symposium，2005WCSIMS）于1月15--19日在台湾新竹成功举行，这是1993和1998年在北京清华大学召开第一、二届中国二次离子质谱学会议的基础上，首次在新竹清华大学举办，新竹和北京清华大学的凌永健和查良镇教授共同担任大会主席。新竹清华大学工学院院长陈力俊教授和化学系主任汪炳钧教授致欢迎词后，会议正式开始。     

ESQUIRE—LC离子井LC／MS^n

ＥＳＱＵＩＲＥ－ＬＣ离子阱ＬＣ／ＭＳ＾ｎ是将惠普（ＨＰ）与布鲁克（ｂｒｕｋｅｒ）的尖端技术相结合的高效液相色谱／质谱（ＬＣ／ＭＳ＾ｎ）系统。惠普公司成功的１１００系列ＨＰＬＣ和先进的电喷雾电离／大气压化学电离（ＥＳＩ／ＡＰＣＩ）离子源与布鲁克公司最新的多极离子阱ＭＳ和ＭＳ＾ｎ分析器完美结合在一起。ＥＳＱＵＩＲＥ－ＬＣ是一种先进的自动化程度最高的液质联用仪。本文是对该仪器的性能特点、技术指标及应用的     

深度分辨率对多层薄膜样品SIMS分析的影响

组分元素和杂质在多层薄膜样品中深度分布的ＳＩＭＳ剖析结果总是编离其真实的分布情况，这是由一次离子溅射样品时的物理过程以及溅射坑底的不平整所造成的。轰击离子在样吕内所引起的混合效应，以及坑底的不平整导致了某一时刻的二次离子来自样品中的不同深度。因此，为了提高ＳＩＭＳ分析的深度分辨率，必须注意克服这两种影响因素。     

SIMS micro-analysis with a gallium ion microprobe

SIMS microanalysis is readily achieved by the adoption of the liquid metal field ion source for formation of the primary ion probe. These sources exhibit high brightness and small source size and permit the formation of high intensity sub-micron ion beams at low energies (⩽10 KeV). Operation is simple, UHV compatible and well suited to mulit-technique surface analysis systems, as well as dedicated SIMS instrumentation.Beam characteristics for a gallium probe allow image resolutions down to 1000 Å with probe currents ranging from 50 pA at high resolution, to maximum currents in excess of 100 nA. Image recording times range from 10 s to 10 min, typically.A gallium source has been in routine operation for over one year on a quadrupole based SIMS instrument, and a wide range of experience gained on various specimens. These include metals, semiconductors, insulators, polymers and biological materials.Some comparisons have been made between the use of argona and gallium beams with respect to spectral content and elemental sensitivities. In general the sensitivities are similar, while the main difference in spectral content is the presence of secondary ions of gallium and gallium complexes.Insulating specimens which have proved very difficult in Auger analysis such as optical fibres, or powders, have been studied more readily with the gallium probe in SIMS analysis. In this case charge neutralization is effected with an accurately positioned 500 eV electron beam.     

A study of contact-start-stop wear tracks by TOF SIMS

In magnetic hard disk drive system, an ultra thin layer of lubricant is coated to the thin film media surface to prevent wear. Under the condition of relative motion, the displacement and replenishment of the lubricant at the head and media contact area are the factors that control the friction and wear behavior of the system. In this study, we investigate the sliding wear disk surface prepared by contact-start-stop (CSS) test using TOF SIMS (Time of Flight Secondary Ion Mass Spectrometry). TOF SIMS is a power tool for surface analysis with both high spatial and high mass resolution. Our investigations show that the lubricant thickness variation of the disk media at the contact area can be captured by sharp ion map images of TOF SIMS, and the thickness can be inferred based on the relative ion fragment intensity. In addition, the composition variation of the slider material and the magnetic layer materials can also be monitored. Finally the sliding effect is analyzed.     

SIMS instrumentation and imaging techniques

Secondary ion mass spectrometry (SIMS) has evolved as a technique for characterizing solids and surfaces which is distinguished by high sensitivity and its applicability to all elements. It can be used for surface research, in-depth concentration profiling, isotopic work, and the identification of compounds. Combined with imaging techniques, these applications can be made with high spatial resolution. In this respect, ion probe microanalysis complements electron probe microanalysis (XRMA and scanning AES).     

硅中氮的二次离子质谱(SIMS)定量分析

本文采用相对灵敏度因子法,对硅中氮含量的SIMS定量分析方法进行研究。通过运用改变一次束扫描面积的方法,氮的检测限可达到2.0×10~(14)atoms/cm~3,比常规测试能力提高一个量级。     

硅中磷的SIMS分析

本文采用相对灵敏度因子法,对硅中磷含量的SIMS定量分析方法进行研究。并通过提高质量分辨率的方法降低背景,使磷的检测限达到1.0×10~(14) atoms/cm~3,进而成为高纯硅样品中磷杂质含量的最可行的检测手段。     

硅中氧、碳的二次离子质谱(SIMS)分析

本文采用相对灵敏度因子法,对硅中氧、碳含量的SIMS定量分析方法进行研究。通过对样品进行预溅射的方法,氧、碳的的检测限分别可达到6.0e16atoms/cm~3、2.0e16atoms/cm~3。     

Appraisal of SIMS applicability to boron studies in plants

In the search for a new methodological approach applicable to the determination of the still poorly known primary role of boron in plant physiology, we have undertaken to appraise the potential of the SIMS method for the analytical imaging of the boron isotopes, (10)B and (11)B, at physiological concentrations in plants. With our own, CAMECA IMS4F SIMS ion analyser, and using O(2)(+) as primary ions for the detection of B(+) (plus (12)C(+) and (40)Ca(+)) secondary ions, we have been able to map quantitatively the two boron isotopes in control and boron-enriched plants, to evaluate boron concentrations at the level of individual cells and to determine boron isotopic ratios. This provides the opportunity to carry out the simultaneous labeling and imaging of boron, using enrichment with the stable isotopes, (10)B and (11)B. The method has also the potential for the simultaneous, quantitative detection of the boron isotopes and of the borate-binding sites in plant cells.     

二次离子质谱在LED外延技术研究中的应用

Epitaxial growth technology of group III-V semiconductors is used in manufacturing light-emitting diodes. Second-ion mass spectrometry, as a high-sensitive technology in analysis of element density-depth profile, is applied to characterize LED structure and comparison of different epitaxial processes. Characterization of multiple-quantum well by SIMS is also introduced.     

SIMS分析含铀微粒同位素比测量条件的初步研究

The isotope ratios of uranium in particles were closely related to the activities performed in nuclear facilities where the particles were collected, so that the determination of ratio is very important in environmental sample analysis for nuclear safeguards. The method based on the use of secondary ion mass spectrometry (SIMS) was presented for the determination of uranium isotopic composition. The parameters of SIMS were studied in the paper, such as contrast aperture(CA)、lence4(L4)、image field(IF)、the accelerated voltage of primary ions and the secondary ions and so on. These parameters are optimized by measuring the standard reference uranium materials (CRM005 CRM200) for improving the measurement accuracy and the precision of uranium isotopic ratio.