选择外延MOCVD研制DFB激光器和模斑转换器集成器件

研究了利用选择外延生长的InGaAsP材料的厚度增强因子和带隙波长的性质,最大的厚度增强因子为2.9.利用选择外延技术研制的DFB激光器和模斑转换器的集成器件,阈值为10.8mA-在60mA下输出功率为10mW,边模抑制比为35.8dB,垂直方向上的远场发散角从34°减少到9°,垂直方向上的1dB偏调容差为3.4μm.     

选择外延技术研制1.5μm DFB激光器和自对准模斑转换器集成器件

利用选择外延技术研制了1.5μm DFB激光器和自对准模斑转换器单片集成器件.激光器的上限制层与垂直方向上楔型波导的模斑转换器同时选择性生长 ,这样的方法不仅可以分别优化有源区和模斑转换器的材料,同时可以降低选择性生长对接结构的难度.所研制集成器件的阈值为4.4mA,在49.5mA下的输出功率为10.1mW,边模抑制比为33.2dB,垂直方向和水平方向上的远场发散角分别为9°和15°,1dB偏调容差分别为3.6μm和3.4μm.     

选择外延技术研制1.5μm DFB激光器和自对准模斑转换器集成器件

利用选择外延技术研制了1.5μm DFB激光器和自对准模斑转换器单片集成器件.激光器的上限制层与垂直方向上楔型波导的模斑转换器同时选择性生长 ,这样的方法不仅可以分别优化有源区和模斑转换器的材料,同时可以降低选择性生长对接结构的难度.所研制集成器件的阈值为4.4mA,在49.5mA下的输出功率为10.1mW,边模抑制比为33.2dB,垂直方向和水平方向上的远场发散角分别为9°和15°,1dB偏调容差分别为3.6μm和3.4μm.     

InGaAsP材料的厚度增强因子随选择外延MOVPE生长条件的变化

利用扫描电子显微镜(SEM)研究了在选择外延MOVPE生长InGaAsP材料中,厚度增强因子随SiO2掩模宽度的变化,生长条件(如生长压力、Ⅲ族源流量等)对厚度增强因子的影响.随着生长压力的增加,生长速率下降,选择性增强;随着In源流量的增加,生长速率上升,选择性下降.制备了最大厚度增强因子达3.4的InGaAsP体材料.通过扫描电镜观察,得到了较平坦的生长界面和表面形貌.为用选择生长法制备DFB激光器与模斑转换器集成器件提供有效的方法.(OH12)     

用X射线双晶衍射研究在(001)InP上液相外延生长InGaPAs的晶格失配

用 x 射线双晶衍射仪研究了(001),InP 衬底上生长的 InGaPAs外延层在垂直及平行于异质界面方向上的晶格失配。观察到在(001)生长方向上晶格常数随四元外延层厚度变化,而横向上却没有晶格失配。发现四元外延层 x 射线回摆曲线大的半值宽度归因于沿厚度方向晶格常数的变化。     

用于双栅FET的n~+-n-n~-GaAs多层外延生长

采用Ga/AsCl_3/H_2体系,用SnCl_4作掺杂剂,已生长了用于双栅FET的n~+-n-n~-多层外延材料.在一次外延生长中连续生长的n~+-n-n~-多层外延材料的外延层厚度和载流子浓度的均匀性良好.用该材料制作的双栅FET的微波特性也有明显改善.在2GHz和8GHz下,NF分别为0.9dB和2.8dB,相关增益G_a分别为15.5dB和18dB.     

新型2×2聚合物波导垂直耦合器的研究

对2×2聚合物波导垂直耦合器的理论设计和制作过程进行了研究.首先,利用光束传播法(BPM)设计并研究了垂直耦合器的关键参数(交叉角、垂直耦合层厚度)与耦合效率和消光比之间的关系.模拟结果表明,耦合效率最高为93%,消光比最高为29dB.其次,利用标准光刻工艺制作了波导尺寸为4×4 μm,垂直耦合层厚度为2μm,相对交叉角为1.0°的聚合物波导垂直耦合器.实验结果表明,采用聚合物制备波导垂直耦合器,具有工艺简单、灵活的优点.     

75mm 4°偏轴4H-SiC水平热壁式CVD外延生长

利用水平热壁式CVD外延生长技术,在75mm偏向1120方向4°的(0001)Si-面n型导电衬底上同质外延生长了4H-SiC薄膜.光学显微镜和原子力显微镜测试结果表明外延层表面存在三角形、胡萝卜状等典型的4°偏轴外延缺陷及普遍的台阶形貌.通过优化外延参数,片内浓度均匀性(σ/mean)和厚度均匀性分别达到4.37%和l.81%.     

75mm 4°偏轴4H-SiC水平热壁式CVD外延生长

利用水平热壁式CVD外延生长技术,在75mm偏向1120方向4°的(0001)Si-面n型导电衬底上同质外延生长了4H-SiC薄膜.光学显微镜和原子力显微镜测试结果表明外延层表面存在三角形、胡萝卜状等典型的4°偏轴外延缺陷及普遍的台阶形貌.通过优化外延参数,片内浓度均匀性(σ/mean)和厚度均匀性分别达到4.37%和l.81%.     

外延层厚度对垂直结构6H-SiC光导开关特性影响的研究

设计了新颖的具有垂直结构的6H-SiC光导开关。首先采用离子注入工艺在半绝缘6H-SiC衬底两侧生成一层p+离子注入层,然后利用外延工艺在其中的一侧生长一层n+外延层,并将此侧定义为开关的阴极。利用二维半导体器件仿真软件,研究了n+外延层厚度对6H-SiC光导开关特性的影响。结果表明,增加外延层厚度可以提高开关的击穿电压;而开关的导通电流,首先随着n+外延层厚度的增加而减小,在n+外延层厚度为5?m达到最小值,随后随着厚度的增加,导通电流增加。     

Measurement of linewidth enhancement factor of SOA using fiber Sagnac Ring

Semiconductoropticalamplifiers(SOA)arewidely usedincommunicationsystembecauseoftheirsmall volumeandlowpowerconsumption.Theycanbeusedasboosters,on lineamplifiers,andpreamplifier.Asnon linearcomponents,theycanalsobeusedinoptical switch,multiplexers/demultip…     

Low-threshold and narrow-linewidth 1.5 mu m compressive-strained multiquantum-well distributed-feedback lasers

1.5 mu m compressive-strained multiquantum-well distributed-feedback lasers have been fabricated and characterised. 5.5 mA threshold current, 1 MHz mW linewidth-power product, and 600 kHz minimum linewidth were measured on 500 mu m long devices. Measured threshold current as low as 2.2 mA was also obtained on 150 mu m long devices. Both low threshold and narrow linewidth are attributed to the reduced transparency current and linewidth enhancement factor due to the effect of strain.<>     

镀银膜光探针尖与银粒子间场增强最佳条件的FDTD模拟研究

本文利用时域有限差分法(FDTD)模拟了在p极化平面波侧向照射下,扫描近场光学显微镜镀银膜四面锥形探针扫描直径30纳米银球"热点"处的电场增强因子及最佳条件.我们得出了膜厚和探针与银球之间间隙的最佳条件:间隙3纳米时最佳膜厚为20～50纳米,此时的场增强因子最强为70左右;膜厚30纳米时,间距1纳米增强因子最强为298.     

窄条宽MOCVD选区生长InP系材料

报道了窄条宽选区生长有机金属化学气相沉积(NSAG-MOCVD)成功生长的InP系材料,并提出在NSAG-MOCVD生长研究中,引入填充因子的必要性,给出速率增强因子随填充因子变化的经验公式,计算得出速率增强因子随填充因子的变化关系.与实验结果作了比较,发现InP的速率增强因子主要取决于掩膜宽度,InGaAsP的速率增强因子不仅与掩膜宽度有关,同时也依赖于生长厚度,且这种依赖性随掩膜宽度的增加而增加.     

基于CuPc…C60的混合层异质结光伏器件性能研究

制备了基于CuPc…C60混合层异质结有机光伏器件,将其与CuPc-C60双层结构光伏器件进行对比研究。结果表明混合层结构器件性能得到改善,其开路电压、短路电流密度、填充因子和光电转换效率都有提高,分别从CuPc-C60双层结构器件的0.39V、1.92mA/cm2、0.36%、0.48依次提高到CuPc…C60混合层结构器件的0.48V、2.21mA/cm2、0.54%、0.51。根据整数电荷转移模型来分析光伏器件D/A界面及有机材料-ITO衬底界面特性,认为混合层异质结有机光伏器件给体材料HOMO与受体材料LUMO的能级差增加使得器件开路电压提高。混合层异质结有机光伏器件D/A界面面积增加和给体材料HOMO与受体材料LUMO的能级差增加都提高了激子的分离效率,所以器件的短路电流密度增加。     

Film thickness effect on the performance of small molecular solar cell

An efficient organic photovoltaic （OPV） cell with an indium-tin-oxide/CuPc/C60/Ag structure has been investigated by changing the film thickness of organic layers. A high olin-circuit voltage （Yoc） of 0.5 V, a short-circuit current density （Jsc） of 5.81 mA/cm^2, and a high power conversion efficiency （ηp） of 1.2% were achieved at an optimum film thickness. The results demonstrate that material thickness is an important factor to cell optimization, especially for maximizing the absorption rate as will as reducing the cell resistance. Experimental results also indicate that the power conversion efficiency increases from 1.2% to 1.54% as a BCP exciton blocking layer of 10 nm is introduced.     

High-performance λ=1.3 μm InGaAsP-InP strained-layerquantum well lasers

Compressively and tensile strained InGaAsP-InP MQW Fabry-Perot and distributed feedback lasers emitting at 1.3-μm wavelength are reported. For both signs of the strain, improved device performance over bulk InGaAsP and lattice-matched InGaAsP-InP MQW lasers was observed. Tensile strained MQW lasers show TM polarized emission, and with one facet high reflectivity (HR) coated the threshold currents are 6.4 and 12 mA at 20 and 60°C, respectively. At 100°C, over 20-mW output power is obtained from 250-μm-cavity length lasers, and HR-coated lasers show minimum thresholds as low as 6.8 mA. Compressively strained InGaAsP-InP MQW lasers show improved differential efficiencies, CW threshold currents as low as 1.3 and 2.5 mA for HR-coated single- and multiple quantum well active layers, respectively, and record CW output powers as high as 380 mW for HR-AR coated devices. For both signs of the strain, strain-compensation applied by oppositely strained barrier and separate confinement layers, results in higher intensity, narrower-linewidth photoluminescence emissions, and reduced threshold currents. Furthermore, the strain compensation is shown to be effective for improving the reliability of strained MQW structures with the quantum wells grown near the critical thickness. Linewidth enhancement factors as low as 2 at the lasing wavelength were measured for both types of strain. Distributed feedback lasers employing either compressively or tensile strained InGaAsP-InP MQW active layers both emit single-mode output powers of over 80 mW and show narrow linewidths of 500 kHz     

Low threshold current 1.5-μm buried heterostructure lasers usingstrained quaternary quantum wells

Buried heterostructure lasers operating at a wavelength of 1.5 μm with four compressively strained quaternary quantum wells (strain ~1.8%, thickness ~90 Å) and current blocking layers were made using atmospheric pressure metalorganic chemical vapor deposition. Pulsed room-temperature threshold currents for uncoated devices as low as 4.1 mA and as low as 0.8 mA for devices with high reflectivity mirror coatings are reported. The dependence of threshold current on active region width is consistent with broad-area laser measurements     

Induced SER‐Activity in Nanostructured Ag–Silica–Au Supports via Long‐Range Plasmon Coupling

A novel Ag–silica–Au hybrid device is developed that displays a long‐range plasmon transfer of Ag to Au leading to enhanced Raman scattering of molecules largely separated from the optically excited Ag surface. A nanoscopically rough Ag surface is coated by a silica spacer of variable thickness from ～1 to 21 nm and a thin Au film of ～25 nm thickness. The outer Au surface is further functionalized by a self‐assembled monolayer (SAM) for electrostatic binding of the heme protein cytochrome c (Cyt c) that serves as a Raman probe and model enzyme. High‐quality surface‐enhanced resonance Raman (SERR) spectra are obtained with 413 nm excitation, demonstrating that the enhancement results exclusively from excitation of Ag surface plasmons. The enhancement factor is estimated to be 2 × 10⁴–8 × 10³ for a separation of Cyt c from the Ag surface by 28–47 nm, corresponding to an attenuation of the enhancement by a factor of only 2–6 compared to Cyt c adsorbed directly on a SAM‐coated Ag electrode. Upon immobilization of Cyt c on the functionalized Ag–silica–Au device, the native structure and redox properties are preserved as demonstrated by time‐ and potential‐dependent SERR spectroscopy.