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1.
Low loss SAW filters can be built making use of unidirectionality and selfmatching of dispersive transducers. The origin of unidirectionality lies in internal reflections between electrodes. The calculated loss level may be as low as 0.08 dB in down chirp double dispersive IDT filters 相似文献
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Narrow-aperture SAW beams can be generated efficiently using chirp transducers, thus avoiding the need for beam compression in convolvers. The transducers can be designed such as to compensate for phase errors due to dispersive SAW propagation. Experimental confirmation was obtained using convolvers with 120 MHz bandwidth and 16 ?s interaction length, and a bilinearity factor of ?65 dBm was achieved. 相似文献
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Various applications of the EBT to acoustic devices are reported. First we describe the operation of these transducers in the case of Rayleigh waves. Then we report the results we have obtained in the fabrication of: 1) a piezo-MOSFET programmable filter with a bit rate reaching 50 MHz; 2) a Love wave-dispersive delay line with a 240 compression ratio; 3) a fused silica reflective array compressor exhibiting a 30-µs dispersion over a 60-MHz bandwidth around 100 MHz and a 24-dB total insertion loss. 相似文献
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A 2.5 ?-aperture SAW filter has been designed and tested. The single-mode nature of the waveguiding filter allows finger-length-weighting to be distributed between input and output transducers according to a simple procedure. The resulting filter has a stopband rejection in excess of 50 dB. 相似文献
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The development of a new SAW convolver with a bandwidth 45 MHz, interaction time 12 ?s and which employs 3-phase unidirectional transducers is discussed. The resulting device has high efficiency (?58 dBm) and displays good self-convolution suppression. Only single-stage fabrication is required. 相似文献
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Low-loss, low-ripple and high out-of-band rejection SAW filters have been constructed using a three transducer configuration with symmetric/antisymmetric end transducers. The filter on 128°-cut LiNbO3 has an insertion loss of 5.2 dB, a passband ripple of 0.3 dB (peak to peak) and an out-of-band rejection of 55 dB. 相似文献
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This paper describes a novel algorithm for the determination of the wide-band mathematical model of a waveguide component, segmented into elementary blocks of known characteristics. Starting from the Y-matrices of the blocks, given in the form of pole expansions in the frequency domain, the algorithm yields the overall Y-matrix in the same form. Therefore, it can be applied iteratively to find the pole expansion of the Y-matrix of larger and larger waveguide structures. The algorithm is particularly useful if the Y-matrix of the blocks are obtained by the boundary-integral-resonant-mode-expansion (BI-RME) method, which yields the Y-parameters just in the desired form. Two examples show that the joint use of the BI-RME method and of the algorithm described in this paper results in a very accurate and fast numerical code, well-suited for the wide-band modeling of complex waveguide structures 相似文献
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Numerical algorithms for determining the elements of the transmission matrix of an inhomogeneous magnetodielectric layer based on the integration by the expansion method are proposed. A method of successive smooth disturbances for solving the problem of diffraction by an inhomogeneous layer whose permittivity depends on the field amplitude is proposed. For simple cases, explicit forms of matrices and numerical results for a quasi-periodic structure are given. 相似文献
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The purpose of this letter is to show that the product of the impedance and admittance matrices of three-conductor transmission lines is never in the form [aa,b0] or [aa,0b] when s = jω The significance of this result is discussed. 相似文献
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Successful working of a 3-phase unidirectional transducer (TPUDT) SAW filter at 1.03 GHz, without using any airgap crossovers, is reported in the letter. A thin-film capacitance existing between the feed electrodes of the transducers is used to advantage, as an essential element of the required phaseshifting network. The minimum insertion loss is found to be 2.0 dB. The filter is believed to have wide applications in the present and future communication systems requiring low-loss bandpass filtering. 相似文献
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《Electron Devices, IEEE Transactions on》1972,19(10):1131-1133
Small-signal admittance and phasor diagrams for metal-semiconductor-metal microwave oscillator diodes (BARITT diodes) were calculated by taking previously neglected carrier diffusion and field dependence of carrier velocity into account. It was shown that the microwave performance greatly degrades with an increase of dc current density and of oscillation frequency. 相似文献
14.
Interdigital sensors and transducers 总被引:4,自引:0,他引:4
Mamishev A.V. Sundara-Rajan K. Fumin Yang Yanqing Du Zahn M. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》2004,92(5):808-845
This review paper focuses on interdigital electrodes-a geometric structure encountered in a wide variety of sensor and transducer designs. Physical and chemical principles behind the operation of these devices vary so much across different fields of science and technology that the common features present in all devices are often overlooked. This paper attempts to bring under one umbrella capacitive, inductive, dielectric, piezoacoustic, chemical, biological, and microelectromechanical interdigital sensors and transducers. The paper also provides historical perspective, discusses fabrication techniques, modeling of sensor parameters, application examples, and directions of future research. 相似文献
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This paper proposes new admittance matrix models to approach the behavior of fully-differential Operational Transresistance Amplifiers (OTRAs) and Current Operational Amplifiers (COAs). The infinity-variables method is used in order to derive the new generalized models. As a consequence, standard nodal analysis being improved to compute fully-symbolic small-signal characteristics of fully-differential analog circuits. 相似文献
16.
《Electron Devices, IEEE Transactions on》1975,22(5):294-295
The unequal ionization rates reported for holes and electrons in GaAs have been used to calculate the small-signal admittance for a complimentary p-type IMPATT diode. For the uniformly doped n and p device structures considered, the p-type structure is found to have significantly increased negative conductance. 相似文献
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A small-signal equivalent circuit of a Gunn-effect device is deduced from a simple model. Preliminary measurements substantiate this equivalent circuit. The results are used to calculate the small-signal admittance of a 1?cm GaAs Gunn-effect device at 10 Gc/s. 相似文献
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