Pyramid-shaped silicon photodetector with subwavelength aperture[for NSOM]

We present a new type of silicon photodetector with a subwavelength aperture designed to scan material surfaces with a resolution inaccessible by conventional optical microscopy. Such a probe is designed for integration into a near-field scanning optical microscope (NSOM) for scanning and collecting information from the near-field region located at the vicinity of the surface. The photodetector, which was realized by conventional microelectronics technology, is located on top of a 250-μm-high pyramid, enabling detection of reflected as well as transmitted light. The light sensitive part of the probe consists of a micromachined silicon structure built using anisotropic etch solutions such as ethylene diamine pyrocatechol (EDP) and KOH. The shape of the probe is a truncated double pyramid with a ring shape top silicon/aluminum Schottky diode surrounding an exposed silicon photosensitive area of about 150 nm in diameter. Typical I-V characteristics and optical response measurements are presented     

扫描近场圆偏振光学显微镜

提出一种利用镀有金属薄膜的V形无孔光学探针构建的扫描近场光学显微镜,将圆偏振光注入镀有金属薄膜的V形槽内在针尖处形成近场照射光源,并利用探针收集样品表面近场光信号。理论分析表明:探针收集的近场和远场反射光之间存在一定的相位差,该相位差与探针机械结构、探针与样品的距离有关,可通过探针与样品之间的距离加以控制,因此利用偏振性器件可有效抑制远场光强。实验中,探针与样品之间的距离通过范德华力回馈控制,探针操作在接触模式,实验结果显示所测近场与远场光相位相差57,近场光学图像横向分辨率优于12 nm。     

Correlation of scanning thermal microscopy and near-field cathodoluminescence analyses on a blue GaN light emitting device

A scanning near-field thermal microscope and a scanning electron microscope/scanning near-field optical microscope hybrid system for near-field cathodoluminescence investigations were used to characterize blue GaN LEDs. Optoelectronic, electronic and thermal device properties are determinable with highest resolution. These results provide an interesting perspective with respect to failure analyses and reliability of the devices.     

Near-field detection of photon emission from silicon with 30 nm spatial resolution

We demonstrate a scanning near-field photon emission microscope (SNPEM) for monitoring photon emission sites with spatial resolution beyond the diffraction limit. Success of SNPEM analysis strongly depends on the sensitivity of photon emission detection. We show that scattering dielectric probe (SDP) is capable of providing both sub-100 nm resolution and compatible sensitivity at emission wavelengths between 1 μm and 1.4 μm. We propose a two step fabrication method which avoids any metal coating and ensures repeatability of parameters of different probes. We also predict that fabrication of SDP from a multi-mode fiber instead of a single mode fiber can significantly improve the collection efficiency of the probe.     

亚波长结构纳米孔的近场光学测试

利用微纳加工工艺制作了亚波长结构纳米孔,应用近场光学显微镜(NFOM)对样品进行了近场光学性质的测试,获得了样品的近场光强分布,测得其近场光斑直径约为120 nm,测试结果证明了环形周期性结构对中心纳米孔的增透和聚焦作用,为环形亚波长结构的纳米孔应用奠定了基础。     

聚焦离子束在光纤探针制备技术中的应用

本文概述了利用聚焦离子束制备用于近场光学显微镜光纤探针的方法,讨论了探针的锥型刻蚀、孔径控制和特殊结构加工等;论述了聚焦离子束的工作原理和在光纤探针高精度加工方面的优势。利用此技术制备的光纤探针的锥型和针尖孔径精确可控,并具有高光洁度,高通光效率等特点。     

An overview of near-field antenna measurements

After a brief history of near-field antenna measurements with and without probe correction, the theory of near-field antenna measurements is outlined beginning with ideal probes scanning on arbitrary surfaces and ending with arbitrary probes scanning on planar, cylindrical, and spherical surfaces. Probe correction is introduced for all three measurement geometries as a slight modification to the ideal probe expressions. Sampling theorems are applied to determine the required data-point spacing, and efficient computational methods along with their computer run times are discussed. The major sources of experimental error defining the accuracy of typical planar near-field measurement facilities are reviewed, and present limitations of planar, cylindrical, and spherical near-field scanning are identified.     

基于扫描探针显微镜的近场超空间分辨指纹光谱技术研究现状

基于扫描探针显微镜的近场超空间分辨指纹光谱技术在分子识别及组分鉴别方面具有极大的应用前景.扫描探针显微技术与不同的光谱联合使用,发展出了不同的具有纳米级分辨的指纹光谱技术,其中包括针尖增强拉曼散射光谱技术、纳米级分辨率的傅里叶变换红外光谱技术及散射式的扫描近场太赫兹光谱技术.这三种散射式的扫描近场光学显微技术在实现方式上有所不同,在近场指纹识别方面可以相互补充.该综述主要对三种近场超空间分辨指纹光谱技术的特点进行了深入地分析和比较,并且对这三种技术的研究现状及应用进行了总结.     

Double $phi$-Step $theta$-Scanning Technique for Spherical Near-Field Antenna Measurements

Probe-corrected spherical near-field antenna measurements with an arbitrary probe set certain requirements on an applicable scanning technique. The computational complexity of the general high-order probe correction technique for an arbitrary probe, that is based on the Phi scanning, is O(N⁴), where N is proportional to the radius of the antenna under test (AUT) minimum sphere in wavelengths. With the present knowledge, the computational complexity of the probe correction for arbitrary probes in the case of the thetas scanning is O(N^-6), which is typically not acceptable. This paper documents a specific double Phi-step thetas scanning technique for spherical near-field antenna measurements. This technique not only constitutes an alternative spherical scanning technique, but it also enables formulating an associated probe correction technique for arbitrary probes with the computational complexity of 0(N4) while the possibility for the exploitation of the advantages of the thetas scanning are maintained.     

四象限光电探测器在激光光学系统中的典型应用分析

分析了四象限光电探测器在激光制导、光镊、扫描探针显微镜和空间光通信等激光光学系统中的典型应用。结果表明,四象限光电探测器应用在激光制导中具有高制导精度的优势;应用在光镊系统和扫描探针显微镜中具有纳米级分辨率：应用在空间光通信中具有较高跟踪和定位精度。     

Scanning optical microscopes close in on submicron scale

The principles and advantages of the confocal scanning optical microscope (CSOM) are described, and the history of the concept is given. The CSOM is compared with the scanning electron microscope, scanning acoustic microscope, scanning tunneling microscope, scanning force microscope, and near-field scanning optical microscope. The imaging properties and applications of the CSOM are discussed     

近场EMC测试技术

随着电探头、磁探头和电磁算法的不断完善,近场扫描技术有望与电磁兼容暗室、微波混响室等一起构成近场、远场一体化的电磁兼容测试系统。总结了近场测试技术的一些进展,主要包括利用感应区的电磁场重构等效辐射源,测量弱辐射体的屏蔽效能,以及多分量电磁探头的设计。     

Measurement of the Waveguide Near—field Optical Spot

The characteristic of near-field spots is analyzed.The size of the near field and the heat response time of the hybrid record medium to overcome super paramagnetic effect are calculated based on the heat transfer theory.A novel measuring method for the diameter of near-field recording spot is also presented.Since the grain of the recording media is tiny enough,near-field optical lithography can be accomplished with the aid of atomic force microscope(AFM).The diameter of near-field recording sopt can be obtained by specifically designed computer.So the relationship between the near-field recording spot diameter and the probe size of near-field recording system,the near field recording distance coupling between head and disc can be got.     

Scanning near-field millimeter-wave microscopy using a metal slitas a scanning probe

In this paper, a novel type of scanning near-field millimeter-wave microscopy using a metal slit-type probe is proposed. A tapered reduced-height rectangular waveguide forms the slit aperture, which has a width much smaller than one wavelength λ and length of the order of λ. The slit probe can be operated in the TE₁₀ mode and, thus, results in high transmission efficiency, even when the width is exceedingly small. An image reconstruction algorithm based on computerized tomographic imaging is used to obtain two-dimensional near-field images. Experiments performed at 60 GHz (λ=5 mm) show that image resolution equal to the slit width (~80 μm) is achieved. As an application of this scanning slit microscopy, visualization of transition phenomena of photoexcited free carriers in silicon have been successfully demonstrated, yielding useful information on the dynamics of free carriers in semiconductor materials     

Near-field microwave tomography of subsurface dielectric layers

There is represented a method of 3D visualization of a structure of dielectric objects with small loss on a basis of data, obtained by scanning with near-field microwave microscope. Theoretical model was proven by means of experimental research of amount of test objects. We researched possibility of probes with complex geometry application for defectoscopy of dielectric materials analysis of volumetric non-uniformities.     

近场光学探测的光纤微探针研制

近场光学显微镜可以突破传统光学显微镜的衍射极限限制，其分辨能力主要取决于探针的几何尺寸，而与波长无关。本文介绍了应用化学镀和烧结渗金镀制金膜制作纳米级光纤微探针的方法。     

变温腐蚀法制备纳米光纤探针

通过改变温度,用腐蚀的方法制备出用于近场光学显微镜的光纤探针。通过控制光纤在不同温度的腐蚀液中腐蚀的时间,制备出多种形貌的光纤探针,所制作探针的锥形过渡区短而锥角大。该法具有重复性高、探针形貌可控、操作方便、实验费用低廉、制备的探针表面光滑等优点,利用该方法成功地制备出针尖尺寸50～300nm、针尖锥角在40°～74°可调的光纤探针。将制备的探针用于扫描全息光栅(500线/mm),结果在40mm范围内扫描有20个周期,与全息光栅的标定结果相符。     

近场纳米光纤探针腐蚀制备技术概述

纳米光纤探针是扫描近场光学显微镜的常用关键器件,化学腐蚀法制备近场光学光纤探针是基于腐蚀液弯液面的高度随光纤芯径的动态变化过程。从流体力学杨一拉普拉斯方程出发,研究了弯液面高度随光纤芯径大小的变化关系,分析了影响腐蚀法制备纳米光纤探针的相关因素,追踪了利用化学腐蚀制备纳米光纤探针的最新进展,介绍了静态腐蚀法、动态腐蚀法和选择腐蚀法等多种方法,并分析了每种方法的特点,作了比较和总结。     

扫描近场光学显微镜中探针样品间距控制方法

在动态原子力与近场光学扫描显微镜中,探针与样品的间距关系到分辨率以及扫描速度这两个最重要参数的性能。在对几种主要的动态原子力/扫描近场光学组合显微镜的探针/样品间距控制模式分析的基础上,认为提高探针Q值是提高扫描显微镜分辨率的有效方法。但是,对采用检测控制探针振幅模式,期望在提高分辨率的同时加快扫描成像速度是不可实现的,因而限制了其发展的空间。而在检测控制探针频率模式下,提高探针Q值,可有效提高扫描探针显微镜的分辨率,且不会制约扫描成像速度的提高。该结论为将来的纳米操作和纳米超高密度光存储的实用化提供了可能,对大连理工大学近场光学与纳米技术研究所研制的原子力与光子扫描隧道组合显微镜(AF/PSTM)的改进和产业化具有积极意义。