Preparation of Ba6−3xNd8+2xTi18O54 via Ethylenediaminetetraacetic Acid Precursor

Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ceramic powders were synthesized by the modified Pechini method using ethylenediaminetetraacetic acid (EDTA) as a chelating agent. A purplish red, molecular-level, homogeneously mixed gel was prepared, and transferred into a porous resin intermediate through charring. Single-phase and well-crystallized Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ powders were obtained from pulverized resin at a temperature of 900°C for 3 h, without formation of any intermediate phases. Meanwhile, the molar ratio of EDTA to total metal cation concentration had a significant influence on the crystallization behavior of Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄. The Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x = 2/3) ceramics prepared via EDTA precursor have excellent microwave dielectric characteristics: ɛ= 87, Qf = 8710 GHz.     

Bismuth/Samarium Cosubstituted Ba6−3xNd8+2xTi18O54 Microwave Dielectric Ceramics

Modification of the microwave dielectric properties in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x = 0.5) solid solutions by Bi/Sm cosubstitution for Nd was investigated. A large increase in the dielectric constant and near-zero temperature coefficient combined with high Qf values were obtained in modified Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ solid solutions where an enlarged solid solution limit of Bi in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ was observed. Excellent microwave dielectric characteristics (ɛ= 105, Qf = 4110 GHz, and very low τ_f) were achieved in the composition Ba_{6−3 x} (Nd_0.7Bi_0.18Sm_0.12)_{8+2 x} Ti₁₈O₅₄.     

A- and B Site Cosubstituted Ba6−3xSm8+2xTi18O54Microwave Dielectric Ceramics

Tin (Sn) substitution into the B-site and Nd/Sn cosubstitution into the A- and B-sites were investigated in a Ba _{6−3 x} Sm_{8+2 x} Ti₁₈O₅₄solid solution ( x = 2/3). A small amount of tin substitution for titanium improved the temperature coefficient of resonant frequency (τ_f) but led to a decrease of the relative dielectric constant (ɛ) and the quality factor ( Qf ). The Ba_{6−3 x} Sm_{8+2 x} (Ti_{1− z} Sn_z)₁₈O₅₄-based tungsten-bronze phase became unstable for compositions with a tin content of ≥10 mol%, where BaSm₂O₄and Sm₂(Sn,Ti)₂O₇appeared, and finally, these phases became the major phases. On the other hand, Nd/Sn cosubstitution led to a good combination of high ɛ, high Qf , and near-zero τ_f. Excellent microwave dielectric properties were achieved in Ba_{6−3 x} (Sm_{1− y} Nd _y )_{8+2 x} (Ti_{1− z} Sn _z )₁₈O₅₄ceramics with y = 0.8 and z = 0.05 sintered at 1360°C for 3 h: ɛ= 82, Qf = 10 000 GHz, and calculated τ_f=+17 ppm/°C. The tolerance factor and electronegativity difference exhibited important effects on the microwave dielectric properties, especially the Qf value. A large tolerance factor and high electronegativity difference generally led to a higher Qf value.     

Tin Substitution for Titanium in Ba6−3xNd8+2xTi18O54 Microwave Dielectric Ceramics

Tin (Sn) substitution for titanium (Ti) was investigated in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x =1/2, 2/3, and 3/4) ceramics. A small amount ( z <0.1) of Sn substitution resulted in Ba_{6−3 x} Nd_{8+2 x} (Ti_{1− z} Sn _z )₁₈O₅₄ solid solutions, and some secondary phases were observed with increasing Sn content. A small amount of Sn substitution improved the Q f value significantly, while, due to the formation of secondary phases, the Q f value degraded sharply for larger Sn content. The relative dielectric constant (ɛ_r) decreased with increasing Sn-content, while the temperature coefficient of resonant frequency (τ_f) generally decreased, although an obvious fluctuation was observed for x =3/4.     

Improved Microwave Dielectric Properties of Ba6Ti1−xSnxNb4O18 Ceramics

Single-phase polycrystalline microwave dielectric ceramics Ba₆Ti_{1− x} Sn _x Nb₄O₁₈, with x changing from 0 to 1, were synthesized by the solid-state reaction method. All the solid solutions fitted well with A₆B₅O₁₈ cation-deficient hexagonal perovskite structure. The substitution of Sn for Ti effectively enhanced the quality factor and controlled τ_f. With increasing Sn content, the dielectric constant decreased from ∼47 to ∼32, and the Q × f value increased significantly from 11 530 to 28 496 GHz, with τ_f varying from 64 to 0 ppm/°C. A zero τ_f was realized when Sn was fully replaced by Ti with the composition Ba₆SnNb₄O₁₈.     

Glass-Free KxBa1−xGa2−xGe2+xO8 Ceramics for Low-Temperature Cofired Ceramics Technology: Synthesis, Phase Transitions, Sintering, and Microwave Dielectric Properties

K _x Ba_{1− x} Ga_{2− x} Ge_{2+ x} O₈ (0.6≤ x ≤1) polycrystalline ceramics are potential materials for glass-free low-temperature cofired ceramics (LTCC) substrates. We have made a comprehensive study of the kinetics of the monoclinic-to-monoclinic P 2₁/ a ⇔ C 2/ m phase transition. The low-temperature-stable P 2₁/ a phase with a high Q × f value was synthesized using a subsolidus method and was well sintered at the LTCC temperature with a H₃BO₃ additive. A good combination of low sintering temperature (910°–920°C), high Q × f values (96 700–104 500 GHz), low permittivities (5.6–6.0), and a small temperature coefficient of resonant frequency (∼−20 ppm/°C) was obtained for ceramics with x =0.67 and 0.9 and with 0.1 wt% of H₃BO₃.     

Effect of Bismuth Borate/LiF on the Sintering, Thermal, and Microwave Dielectric Properties of Ba6−3xSm8+2xTi18O54 (x=2/3) Solid Solution

Ba_{6−3 x} Sm_{8+2 x} Ti₁₈O₅₄ ( x =2/3) (BST) was prepared by the solid-state method and the effect of bismuth borate (BB)/LiF on the sinterability, microstructure, and thermal and microwave dielectric properties were studied. BST+3.5 wt% BB+0.5 wt% LiF composite sintered at 1050°C has Q × f =4500 GHz, ɛ=52, and τ _f =+6 ppm/°C. Raman spectrum of the composite was compared with that of BST and the structural changes were investigated.     

Sol–Gel Preparation of BaTi4O9 and Ba2Ti9O20

BaTi₄O₉ and Ba₂Ti₉O₂₀ precursors were prepared via a sol–gel method, using ethylenediaminetetraacetic acid as a chelating agent. The sol–gel precursors were heated at 700°–1200°C in air, and X-ray diffractometry (XRD) was used to determine the phase transformations as a function of temperature. Single-phase BaTi₄O₉ could not be obtained, even after heating the precursors at 1200°C for 2 h, whereas single-phase Ba₂Ti₉O₂₀ (as determined via XRD) was obtained at 1200°C for 2 h. Details of the synthesis and characterization of the resultant products have been given.     

Effects of B2O3 on the Phase Stability of Ba2Ti9O20 Microwave Ceramic

Preparation of dense and phase-pure Ba₂Ti₉O₂₀ is generally difficult using solid-state reaction, since there are several thermodynamically stable compounds in the vicinity of the desired composition and a curvature of Ba₂Ti₉O₂₀ equilibrium phase boundary in the BaO–TiO₂ system at high temperatures. In this study, the effects of B₂O₃ on the densification, microstructural evolution, and phase stability of Ba₂Ti₉O₂₀ were investigated. It was found that the densification of Ba₂Ti₉O₂₀ sintered with B₂O₃ was promoted by the transient liquid phase formed at 840°C. At sintering temperatures higher than 1100°C, the solid-state sintering became dominant because of the evaporation of B₂O₃. With the addition of 5 wt% B₂O₃, the ceramic yielded a pure Ba₂Ti₉O₂₀ phase at sintering temperatures as low as 900°C, without any solid solution additive such as SnO₂ or ZrO₂. The facilities of B₂O₃ addition to the stability of Ba₂Ti₉O₂₀ are apparently due to the eutectic liquid phase which accelerates the migration of reactant species.     

Structure-Property Phase Diagram of BaZrxTi1−xO3 System

In the course of searching environmental friendly lead-free relaxor ferroelectrics a complete phase diagram of barium zirconate titanate, Ba(Zr _x Ti_{1− x} )O₃ system with compositions 0.00≤ x ≤1.00 has been developed based on their dielectric behavior. It has been shown that BaZr _x Ti_{1− x} O₃ system depending on the composition, successively depicts the properties extending from simple dielectric (pure BaZrO₃) to polar cluster dielectric, relaxor ferroelectric, second order like diffuse phase transition, ferroelectric with pinched phase transitions and then to a proper ferroelectric (pure BaTiO₃). A comprehensive structure–property correlation of BaZr _x Ti_{1− x} O₃ ceramics has been studied to understand the various ferroelectric phenomena in the whole phase diagram.     

Formation Mechanism and Synthesis of Apatite-Type Structure Ba2+xLa8−x(SiO4)6O2−δ

The formation process of Ba₂La₈(SiO₄)₆O₂ was clarified using thermogravimetry–differential thermal analysis (TG-DTA) and a high-temperature powder X-ray diffraction (HT-XRD) method. Phase changes identified from the HT-XRD data surprisingly corresponded to the weight loss and/or endothermic peaks observed in the TG-DTA curves. Raw material with the composition Ba₂La₈(SiO₄)₆O₂ was completely reacted at 1400°C and produced only an apatite-type compound without a secondary phase. Moreover, the synthesis of Ba_{2+ x} La_{8− x} (SiO₄)₆O_2−δ crystals with x = 0–2 was attempted using a solid-state reaction.     

Matrix Phase in Ceramics with Composition near BaO·Nd2O3·5TiO2

Phase structures of two ceramics of Compositions BaNd₂Ti₅O₁₄ and Ba_3.75Nd_9.5Ti₁₈O₅₄, both of which had earlier been reported to be single-phase materials, were investigated using electron microscopy and an electron probe microanalyzer. It was observed that the amount of secondary phases was much lower in ceramics prepared with the latter composition and that the composition of the matrix phase of both samples was near 4BaO·5 Nd₂O₃·18TiO₂. These results indicate that only the composition Ba_3.75Nd_9.5Ti₁₈O₅₄ is a single-phase composition.     

Ferroelectric and Piezoelectric Properties of Na1−xBaxNb1−xTixO3 Ceramics

Piezoelectric ceramics Na_{1− x} Ba _x Nb_{1− x} Ti _x O₃ with low BaTiO₃ concentrations x have been prepared by the solid-state reaction method, and their ferroelectric and piezoelectric properties have been studied. The ceramics are classic ferroelectrics when x ≤0.10, and the ferroelectric–paraelectric phase transition becomes diffusive when x ≥0.15. A low doping level of BaTiO₃ changes the NaNbO₃ ceramics from antiferroelectric to ferroelectric. With the increase in BaTiO₃ doping level, the Curie temperature of ceramics decreases linearly and the remnant polarization and coercive field also decrease, while their dielectric constant increases. Na_0.9Ba_0.1Nb_0.9Ti_0.1O₃ ceramics show the largest piezoelectric constant d ₃₃ (147 pC/N) and good sinterability, suggesting that it is a good candidate for lead-free piezoelectric ceramics.     

Internal Oxidation of Ce3+-BaTiO3 Solid Solutions

The reoxidation process in highly Ce³⁺-doped BaTiO₃ ceramics was studied using TEM. Samples of two different types of solid solutions, Ba_1−XCe³⁺ _X Ti_1−X/4( V _Ti) X/4 O₃ and Ba_1−XCe³⁺ _X Ti⁴⁺_{1− X} Ti³⁺ _X O₃, were prepared by sintering oxide mixtures in air and in a reducing atmosphere, respectively. The solid solutions were reoxidized by annealing in air at high temperatures (1000°—1100°C). As a result of internal oxidation of Ce³⁺ and Ti³⁺, fluorite CeO₂ and monoclinic Ba₆Ti₁₇O₄₀ phases were precipitated in the perovskite matrix. In Ba_1−XCe³⁺ _X Ti_1−X/4( V _Ti)X/4O3 solid solution precipitates nucleate heterogeneously at grain boundaries and at extended defects inside the grains, whereas in Ba_1−XCe³⁺_XTi⁴⁺_1−XTi³⁺_XO₃ solid solution precipitates are nucleated mainly homogeneously inside reoxidized perovskite grains. The form of the precipitates and their orientational relationship with the matrix, as well as the mechanism of internal oxidation, are discussed.     

Influence of Non-Stoichiometry on the Structure and Properties of Ba(Zn1/3Nb2/3)O3 Microwave Dielectrics: I. Substitution of Ba3W2O9

A narrow region of Zn-vacancy-containing cubic perovskites was formed in the (1− x )Ba₃(ZnNb₂)O₉−( x )Ba₃W₂O₉ system up to 2 mol% substitution ( x =0.02). The introduction of cation vacancies enhanced the stability of the 1:2 B-site ordered form of the structure, Ba(Zn_{1− x} □ _x )_1/3(Nb_{1− x} W _x )_2/3O₃, which underwent an order–disorder transition at 1410°C, ∼35° higher than pure Ba(Zn_1/3Nb_2/3)O₃. The Zn vacancies also accelerated the kinetics of the ordering reaction, and samples with x =0.006 comprised large ordered domains with a high lattice distortion ( c/a =1.226) after a 12 h anneal at 1300°C. The tungstate-containing solid solutions can be sintered to a high density at 1390°C, and the resultant ordered ceramics exhibit some of the highest microwave dielectric Q factors ( Q × f =1 18 000 at 8 GHz) reported for a niobate-based perovskite.     

Insulating Properties of Lanthanum-Doped BaTiO3 Ceramics Prepared by Low-Temperature Synthesis

Samples of composition Ba_{1− x} La _x Ti_{1− x /4}O₃, x = 0, 0.003, 0.03, and 0.10, were prepared by an alkoxide sol–gel route with final firing of ceramics at 1100°C, 2 h in air. All samples showed bulk insulating behavior with no evidence of semiconductivity caused by either direct donor doping or oxygen loss.     

Orientation Relationships of Reactively Grown Ba6Ti17O40 and Ba2TiSi2O8 on BaTiO3 (001) Determined by X-ray Diffractometry

Fresnoite grows at 700° and 800°C, and Ba₆Ti₇O₄₀ grows at 1200°C with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured fresnoite is formed at higher temperatures. The SiO₂ films react with the BaTiO₃ crystals, forming the phases Ba₂TiSi₂O₈ (fresnoite) and Ba₆Ti₁₇O₄₀. At 700° and 800°C, both phases grow with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured polycrystalline phases are formed at higher temperatures.     

Phase Equilibria in the TiO2-Rich Region of the System BaO-TiO2

Phase relations in the system BaO-TiO₂ from 67 to 100 mol% TiO₂ were investigated at 1200° to 1450°C in O₂. Data were obtained by microstructural, X-ray, and thermal analyses. The existence of the stable compounds Ba₆Ti₁₇O₄₀, Ba₄Ti₁₃O₃₀, BaTi₄O₉, and Ba₂Ti₉O₂₀ was confirmed. The compound BaTi₂O₅ is unstable and either forms as a reaction intermediate below the solidus or crystallizes from the melt. The compounds Ba₆Ti₁₇O₄₀ and Ba₄Ti₁₃O₃₀ decompose in peritectic reactions, and BaTiO₃ and Ba₆Ti₁₇O₄₀ react to form a eutectic. Special conditions are required for the formation of Ba₂Ti₉O₂₀, which decomposes in a peritectoid reaction at 1420°C. The new phase diagram is presented.     

Effect of V2O5 Doping on the Sintering and Dielectric Properties of M-Phase Li1+x−yNb1−x−3yTix+4yO3 Ceramics

The effect of the addition of V₂O₅ on the structure, sintering and dielectric properties of M -phase (Li_{1+ x − y} Nb_{1− x −3 y} Ti _x +4 _y )O₃ ceramics has been investigated. Homogeneous substitution of V⁵⁺ for Nb⁵⁺ was obtained in LiNb_{0.6(1− x )}V_{0.6 x} Ti_0.5O₃ for x ≤ 0.02. The addition of V₂O₅ led to a large reduction in the sintering temperature and samples with x = 0.02 could be fully densified at 900°C. The substitution of vanadia had a relatively minor adverse effect on the microwave dielectric properties of the M -phase system and the x = 0.02 ceramics had [alt epsilon]_r= 66, Q × f = 3800 at 5.6 GHz, and τ_f= 11 ppm/°C. Preliminary investigations suggest that silver metallization does not diffuse into the V₂O₅-doped M -phase ceramics at 900°C, making these materials potential candidates for low-temperature cofired ceramic (LTCC) applications.     

Effect of Al2O3 and Bi2O3 on the Formation Mechanism of Sn-Doped Ba2Ti9O20

High-performance Ba₂Ti₉O₂₀ ceramics are attracting great attention, but their formation mechanism still is somewhat unclear. The present investigation shows that the formation of Ba₂Ti₉O₂₀ can be promoted strikingly by the participation of Bi₂O₃ and Al₂O₃. The effect of Bi₂O₃ on the formation of Ba₂Ti₉O₂₀ is attributed to the fact that migration of the involved reactants is accelerated by liquid which forms from the melting of Bi₂O₃ above 830°C. This migration, however, is not the only rate-limiting factor. A high potential-energy barrier, resulting from stress that arises along the crystal-structured layers, also heavily restricts the formation of Ba₂Ti₉O₂₀. The participation of Al₂O₃, on the other hand, can reduce the height of this potential-energy barrier and effectively improve the kinetics of the formation of Ba₂Ti₉O₂₀ by causing the formation of BaAI₂Ti₆O₁₆ crystals; these crystals intergrow with Ba₂Ti₉O₂₀ crystals and result in decreased stress.