电子束注入对多孔硅吸杂效果的影响

研究了电子束注入对多孔硅吸杂效果的影响。采用电化学腐蚀方法利用双电解槽在单晶硅片上制备多孔硅。电子束注入以后多孔硅的微观形貌发生了变化,通过3min的电子束注入处理,硅片的电阻率发生了明显的改变,大于相同条件下经过快速热处理的硅片的电阻率,这充分证明了电子束注入有热效应与电场效应的双重作用,对去除杂质B有一定的效果。电子束注入时间对去除杂质的效果有一定的影响。     

多孔硅对单晶硅少子寿命影响状况的研究

以p型单晶硅片为研究对象,在单晶硅片表面采用化学腐蚀方法制备多孔硅层,通过实验选取制备多孔硅的最佳工艺条件,采用SEM观察多孔硅表面形貌,以及用微波光电导法测试少子寿命的变化情况。结果表明,在相同的腐蚀溶液配比条件下腐蚀11min得到的多孔硅层的表面形貌最好,孔隙率最大。在850℃下热处理150min时样品少子寿命的提高达到最大,不同腐蚀时间的样品少子寿命提高程度不同,腐蚀11min的样品少子寿命提高最大,约有10%左右。多孔层的形成伴随着弹性机械应力的出现,引起多孔层-硅基底界面处产生弹性变形,这有利于缺陷和金属杂质在界面处富集。另外,多孔硅仍具有晶体结构,但其表面方向上的晶格参数要比初始硅的晶格参数大,也有利于金属杂质向多孔层迁移。     

应用于微电子机械系统中多孔硅的研究

针对多孔硅在MEMS中作为牺牲层和绝热层的应用,主要研究了电化学腐蚀法制备多孔硅的实验条件与多孔硅深度及其孔隙率间的关系,实验发现电化学腐蚀法制备多孔硅的腐蚀速率在腐蚀前期阶段基本是一定值(电流密度为80mA/cm2时为1.3μm/min,电流密度为40 mA/cm2时为0.4μm/min),但到腐蚀后期阶段随着孔深的增加有所下降.同时发现对于不同的腐蚀电流密度,多孔硅的孔隙率都有随腐蚀时间的延长先增加后降低的趋势,用Beale模型可以很好的解释这一现象.最后,针对多孔硅在制备后易发生龟裂的现象,用拉曼光谱分析了多孔硅的内部应力情况,结果表明随多孔硅孔隙率的上升其内部残余应力有增加的趋势.     

适用于微型燃料电池扩散层的多孔硅的可控制备工艺研究

多孔硅以其多孔结构及大的表面体积比等特点被认为是可在基于MEMS技术的微型燃料电池中代替碳 纸、碳布作为扩散层的材料. 本文考虑传统碳纸、碳布作为扩散层的要求, 并结合多孔硅材料的特点, 选用n<100>(0.04～0.15 Ω·cm)单晶硅进行了多孔硅制备工艺的研究; 考察了腐蚀液的浓度、电流密度和氧化处理时间对多孔硅的孔隙率、孔深度及氧化速率 的影响, 实现了多孔硅的可控制备. 孔隙率为40%、孔径为350～700nm、厚度为60μm的多孔硅膜电极经循环伏安测定, 在0.5mol/L H₂SO₄溶液中, 表现出与碳纸相近的电活性, 显示了潜在的应用价值.     

多孔硅的电化学制备与研究

以电化学方法制备了多孔硅材料并通过表面轮廓测试仪、原子力显微镜、显微拉曼光谱仪等设备对制备多孔硅的孔隙率、厚度、表面形貌、以及热导率进行了表征.结果发现,本实验制备的多孔硅属于介孔硅(15～20nm),其孔隙率随腐蚀时间和腐蚀电流的变化有先增大后减小的趋势.增加多孔硅的厚度和孔隙率,可以使得多孔硅的热导率显著降低(最低可低至0.62W/m·K).     

超高真空电子束蒸发在多孔硅上外延单晶硅

采用超高越空电子束蒸发的方法在用阳极氧化制备的多孔硅衬底上外延单晶硅,研究了不同多孔硅衬底对外延质量的影响。采用高能电子衍射表征外延层的晶体结构,截面透射电镜上材料的微结构,原子力镜表征外延层表面的粗糙度,卢瑟福背散射／沟道表征外延层晶体质量,扩展电阻表征材料的电学性能。一系列的测试结果表明对在5mA／cm^2电流密度下阳极氧化10min形成的多孔硅衬底,可用超高真空电子束蒸发的方法外延出质量良好的单晶硅。     

阳极氧化电流密度和时间对多孔硅形貌和电子发射特性的影响

为了应用于场发射显示器,采用电化学阳极氧化,快速热氧化和磁控溅射等方法制备出了金属/多孔硅/硅基底/金属结构的多孔硅电子发射体,并运用扫描电子显微镜观察了多孔硅的微观形貌,结果发现多孔硅的孔径随着电化学阳极氧化电流密度的增加而增加,多孔硅层的厚度随着阳极氧化电流密度和时间乘积的增加而增加。在真空系统中测量了多孔硅的电子发射特性,电子发射的阈值电压Vth随着多孔硅层厚度的增加而增加;最大的发射效率η为7.5‰,此效率出现在孔径6~16 nm,多孔硅层厚度为11.06μm的样品中,对应的器件电压Vps为30V。     

直流电化学腐蚀法制备多孔硅的表面形貌研究

采用正交实验，直流电化学腐蚀法制备多孔硅。用原子力显微镜对表面进行观察，研究电化学腐蚀参数对其表面形貌的影响。氢氟酸浓度（CHF）升高，使临界电流密度（JPS）增大，有利于多孔硅的形成。电流密度（J）增大，多孔硅的孔隙率和孔径随之变大，而其纳米粒径将变小。腐蚀时间（t）越长，孔径越大，孔越深。     

纳米多孔硅的电化学制备及性能研究

纳米多孔硅是一种潜在的化学和生物传感材料,本文采用电化学腐蚀法制备纳米多孔硅。采用SEM技术分析多孔硅的表面形貌,研究了腐蚀条件对多孔硅的孔隙率、厚度、I-V特性的影响。结果表明,多孔硅的孔隙率随着腐蚀电流密度和腐蚀时间的增加而呈线性增大趋势;其厚度随着腐蚀电流密度的增加而近似呈线性增大趋势,随腐蚀时间的成倍增加而显著增大;其I-V特性表现出非整流的欧姆接触。     

电化学腐蚀多孔硅表面形貌的结构特性

多孔硅作为微电子机械系统中重要的热绝缘层和牺牲层材料,其表面形貌结构特性是影响多孔硅上薄膜器件性能的重要因素,为此,利用双槽电化学腐蚀方法制备了多孔硅薄膜,并通过原子力显微镜和场发射扫描电子显微镜对制备多孔硅的表面形貌和孔径大小分布进行了观察．结果发现：腐蚀初期,在硅表面会有大量的硅柱形成,硅柱的直径、高度、分布密度与电流密度成正比关系;硅柱在进一步腐蚀过程中会消失,多孔硅的表面粗糙度随着腐蚀的进行,先减小再增大,最后达到稳定值0．52nm;多孔硅孔径大小分布区间随腐蚀时间增加变窄．     

Low-temperature radiation-stimulated gettering of impurities and defects in silicon by layers of porous silicon

Experimental results are presented for the low-temperature gettering of impurities and defects in semiconductor silicon wafers by layers of porous silicon followed by argon ion irradiation. It is shown that the gettering effect is caused by the simplest mobile point defects (vacancies) and elastic waves.     

Effects of annealing on the damage morphologies in BF 2 + ion implanted (1 0 0) silicon

The effects of annealing on the damage morphologies and impurity redistributions in BF ₂ ⁺ ion implanted (1 0 0) silicon were studied using secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM) and Rutherford backscattering (RBS) ion beam channelling technique. An amorphized silicon layer and a heavily-damaged crystal layer containing a high density of point-defect clusters, are formed on the silicon wafer by the ion implantation. SIMS depth profiles of both boron and fluorine are almost Gaussian distribution. Both furnace annealing and rapid thermal annealing cause recrystallization of the amorphized layer and formation of dislocation loop bands out of the point defects. SIMS depth profiles for both impurities show anomalous double peaks at the same depths. These facts suggest that the primary peak is due to the peak of the Gaussian distribution and the secondary peak due to the gettering effects of residual dislocation loop band.     

Porous silicon-based direct hydrogen sulphide fuel cells

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.     

用脉冲电化学法在低HF浓度下制备多孔硅的研究

用脉冲电化学阳极氧化的方法在5％的低HF浓度下获得多孔硅。多孔硅的形成和脉冲电场的施加、去除过程中与电解液－硅半导体体系中物理化学过程的变化有关。在施加电场的间隙，由于Si／电解液界面处HF的补充，SiO2的溶解增强，使得在低HF浓度下Si的溶解速率比其氧化速率高，从而导致多孔硅的形成。同时，在高电场作用下，由于产生了高浓度的空穴，使得氧化层变厚，导致在低HF浓度或大电流密度下多孔硅的平均孔径增大。     

Study of Morphological and Optical Properties of Porous Silicon

Porous silicon layers have been prepared from non-polished p-type silicon wafers of (100) orientation. Scanning electron microscopy and fluorescence spectroscopy have been used to characterize the morphological and optical properties of porous silicon. The influence of varying the anodizing current density on the morphological and optical properties of porous silicon has been investigated. SEM micrographs show that by increasing the anodizing current density in the electrochemical process two peculiar surface morphologies are obtained. The surface morphology in the central region of the sample consists of solid cells delimited by trenches and the trenches bottom is covered by polyhedral pores, and the surface morphology in the periphery contains polyhedral and current-line-oriented pores. The fluorescence spectrum peak at the anodizing current density of 93 mA/cm² gets the maximum intensity and is blue shifted.     

Formation and properties of porous silicon/titania nanostructures

Porous silicon/titania structures have been prepared for the first time by a sol-gel process in which a porous silicon layer was produced on single-crystal p-type silicon wafers and the titania was obtained from Ti-containing sol. The formation of TiO₂, predominantly in the form of anatase, on the porous silicon surface was demonstrated by X-ray diffraction and energy dispersive X-ray analysis. The porous layers were found to contain carbon in addition to the host elements (Si, Ti, and O). Increasing the pore volume through the thermal oxidation of the porous silicon and dissolution of the oxide layer had little effect on the final Ti content, whereas the average pore diameter increased twofold, and the photoluminescence intensity in the porous silicon increased by 20 times.     

Demonstration of the formation of porous silicon films with superior mechanical properties,morphology and stability

Highly stable and mechanically strong thick porous silicon (PS) films have been obtained on textured silicon substrates. Porous silicon formed on textured substrates exhibits higher porosity, better mechanical strength, non-fractured surface morphology and lower stress compared to porous silicon formed on polished silicon substrates at the same current density, time of anodization and method of drying. The improved properties are attributed to the formation of localized highly porous macroscopic plastic regions.     

Photoluminescence studies of thermal impurity diffused porous silicon layers

Porous silicon layers were formed on diffused layers. Both boron and phosphorus impurities were thermally diffused using solid sources in n-Si, p-Si, n-epi/Si and p-epi/Si substrates of various resistivities. Porous silicon on these layers was formed by electrochemical and chemical etching under various etching conditions. Strong visible luminescence was observed from these porous silicon structures. Infrared absorption studies indicated that surface molecule identities are immaterial to the enhancement or degradation of photoluminescence. This revised version was published online in July 2006 with corrections to the Cover Date.