Effect of mirror facets on lasing characteristics of distributed feedback InGaAsP/InP laser diodes at 1.5 µm range

The effect of mirror facets on lasing properties of distributed feedback (DFB) InGaAsP/InP laser diodes was studied theoretically and experimentally. A DFB laser with a window region was found to be suitable to examine the effect of mirror facets. The effective reflectivity of a window structure was calculated to be very small, typically as small as 0.03 percent for a few tens of micrometers of the window region. These small effective reflectivities were experimentally confirmed. Three kinds of DFB lasers, i.e., a double-window (DW), a single-window (SW), and a Fabry-Perot (FP), were discussed. Two modes with a separation corresponding to a so-called stopband appeared in a DW-DFB laser, in which almost no reflection at both ends was estimated. On the other hand, the threshold and the resonant wavelength of an SW- and an FP-DFB laser were found to be sensitive to the phases of corrugation at the facets. It turned out, however, that the mirror facet contributed to the single-mode operation due to an asymmetric resonant spectrum and to the reduction in the threshold. Although a low-threshold-current FP-DFB laser was experimentally obtained, the coincidence between the gain peak and the Bragg wavelengths was essential in this type. The SW-DFB laser seemed the most promising among the three types in terms of the stability of the single-mode operation.     

Theoretical analysis of external optical feedback on DFB semiconductor lasers

The effect of external optical feedback on resonant frequency, threshold gain, and spectral linewidth of distributed feedback (DFB) semiconductor lasers is theoretically analyzed. The analysis applies to any type of laser cavity formed by a corrugated waveguide limited by partially reflecting facets. It is shown that the sensitivity to optical feedback on a facet is closely related to the power emitted through this facet. Numerical results on wavelength selectivity and on sensitivity to optical feedback are given for conventional DFB lasers having an AR-coated facet and for quarter-wave-shifted (QWS) DFB lasers with AR-coatings on both facets. Both laser types are found to be more sensitive to optical feedback on their AR-coated facet than Fabry-Perot lasers for lowkL. On the other hand, QWS-DFB lasers are found to be relatively insensitive to optical feedback for largekL.     

InAs-InAlGaAs quantum dot DFB lasers based on InP [001]

The InAs-InAlGaAs quantum dot (QD) lasers with the InAlGaAs-InAlAs material system were fabricated on distributed feedback (DFB) grating structures on InP [001]. The single-mode operation of InAs-InAlGaAs QD DFB lasers in continuous-wave mode was successfully achieved at the emission wavelength of 1.564 /spl mu/m at room temperature. This is the first observation on the InP-based QD lasers operating around the emission wavelength window of 1.55 /spl mu/m. The threshold current density of the InAs-InAlGaAs QD DFB laser with a cavity length of 1 mm and a ridge width of 3 /spl mu/m, in which one of the cleaved facets was coated with 95% high-reflection, was 1.23 kA/cm/sup 2/ (176 A/cm/sup 2/ for single QD layer). The sidemode suppression ratio value of the QD DFB laser was as high as 42 dB at the driving current of 100 mA.     

CW performance of an InGaAs-GaAs-AlGaAs laterally-coupleddistributed feedback (LC-DFB) ridge laser diode

Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. We demonstrate InGaAs-GaAs-AlGaAs DFB lasers fabricated from a single epitaxial growth using lateral evanescent coupling of the optical field to a surface grating etched along the sides of the ridge. A CW threshold current of 25 mA and external quantum efficiency of 0.48 mW/mA per facet were measured for a 1 mm cavity length device with anti-reflection coated facets. Single-mode output powers as high as 11 mW per facet at 935 nm wavelength were attained. A coupling coefficient of at least 5.8 cm^-1 was calculated from the subthreshold spectrum taking into account the 2% residual facet reflectivity     

Suppression of external cavity modes in DFB lasers with a highendurance against optical feedback

This paper clarifies that the external cavity modes deform optical output response in the DFB lasers by enhancing the relaxation oscillation under NRZ modulation. It is shown that a DFB laser with an asymmetric structure in reflectivity of facets and in position of a λ/4 phase shift can suppress the influence of the external cavity modes     

Modeling of distributed feedback semiconductor lasers withaxially-varying parameters

A numerical model that is capable of predicting important laser characteristics such as the threshold gain and the gain margin between the main and side modes for a distributed-feedback (DFB) semiconductor laser of arbitrary complexity is described. The method consists of solving the coupled-mode equations with axially varying parameters iteratively until the boundary conditions at the two facets are satisfied. The numerical model is applied to two DFB laser structures. In the case of a multiple-phase-shift DFB laser the results show that such devices can have a more uniform axial distribution than that of a conventional quarter-wave-shifted DFB laser while maintaining sufficient gain margin between the main and side modes. In the case of a dual-pitch DFB laser it is shown that the incorporation of a slightly different grating period (~0.1%) over a small section can provide a gain margin that is comparable to that achieved in quarter-wave-shifted DFB lasers     

Stability of the longitudinal mode in λ/4-shiftedInGaAsP/InP DFB lasers

Factors causing the mode stability of λ/4-shifted distributed-feedback (DFB) lasers, spatial hole burning along the laser axis and residual reflectivity of the facets of laser cavity, are studied. It is experimentally and theoretically confirmed that the spatial hole burning increases the corrugation phase shift from λ/4 (π) to 3λ/8 (1.5 π) as the driving current increases in lasers whose coupling constant and cavity-length product kL is 2.0. This hole-burning effect requires the reflectivity of facets to be reduced below 0.2% to get a high reproducibility of lasers oscillating at a stable single mode up to high output powers     

Low threshold operation of 1.5-µm DFB laser diodes

Highly reliable distributed feedback (DFB) laser diodes operating at 1.5-μm wavelength range are fabricated through optimizing the device parameters. Thickness control of the active layer is found to be an essential factor in achieving low threshold operation of DFB lasers. The threshold current as low as 11 mA and stable single longitudinal mode CW operation up to 106°C is achieved with these DFB lasers.     

Evaluation of an automatic method to extract the grating couplingcoefficient in different types of fabricated DFB lasers

Distributed feedback (DFB) laser parameters such as grating coupling coefficient, effective indices, facet reflectances, and the phases of facet reflectances have been determined using a method based on least-square fitting of theoretical spectra to measured, subthreshold DFB laser emission spectra. The only inputs needed are geometrical parameters such as length, grating period, and internal grating phase shifts. A larger number of devices have been successfully characterized, and consistent results have been obtained in both 1.3-μm multi-quantum-well (MQW) DFB lasers with both facets as-cleaved, and in 1.55-μm MQW DFB lasers with no, one, or two facets as-cleaved     

Tailoring characteristics of DFB lasers with low- and high-reflection facets by using sampled gratings

Tailorability of distributed-feedback (DFB) laser characteristics by sampled grating has been pursued for DFB lasers with low- and high-reflection facets. This is based on the finding that there exists close correlation between the threshold gain difference and the axial photon distribution of the main and side modes. An effective-index transfer matrix method is used. This finding enables us to tailor DFB laser characteristics, and shows the futility of an attempt to relieve longitudinal spatial hole burning by making similar the axial photon distribution of the main and side modes. The threshold gain difference is shown to be improved by more than 15% by simple changing the arrangement of the sampled regions.     

A distributed feedback ridge waveguide quantum well heterostructurelaser

A method for incorporating distributed feedback in a ridge waveguide laser by means of lateral gratings and a single growth step is discussed. The necessary Bragg condition for distributed feedback is satisfied by etching gratings along the ridge in the top confining layer of the laser on either side of the contact stripe. Both Fabry-Periot modes and a single emission peak away from the peak of the gain profile are observed in lasers with cleaved facets. The Bragg reflection emission peak does not shift with increasing drive current, which is characteristic of a distributed-feedback (DFB) laser     

Realization and wafer test of InGaAsP/InP DFB laser/monitor OEICs

Wafer-testable distributed feedback (DFB) lasers and monolithically integrated monitor diodes are realized to replace the time consuming and expensive single-chip test procedure in semiconductor laser fabrication process. Laser-end facets and integrated monitor diodes are defined on 1.5-μm InGaAsP/InP multiple quantum well (MQW) DFB laser wafers by reactive ion beam etching (RIBE). Using terminal electrical noise (TEN) measurement, the lasers are characterized directly on the wafer with respect to threshold current and single mode operation. Threshold currents down to 10 mA have been achieved for the integrated devices     

Spectral linewidth estimation of a 1.5 µm range InGaAsP/InP distributed feedback laser

Spectral linewidth of a 1.5 μm range distributed feedback buried heterostructure (DFB-BH) laser in CW operation is estimated theoretically and experimentally. Considering the equivalent mirror facet loss coefficient and the confinement factor in the active layer, etc., we modified the conventional formula for the spectral linewidth of single-mode semiconductor lasers and presented a formula for the linewidth of DFB lasers. Furthermore, power-dependent linewidth measurements of a 1.5 μm range InGaAsP/InP DFB-BH laser with a window region were carried out using Fabry-Perot interferometers. The linewidth was observed to increase linearly with inverse output power. The measured result was explained by the calculated result through the modified formula. The full width at half maximum was estimated to be 50 MHz at an output power of 1 mW.     

Analysis of surface-emitting λ/4-shifted DFB lasers with adistributed Bragg reflector

Threshold current density and differential quantum efficiency are analyzed for a surface emitting (SE) λ/4-shifted distributed feedback (DFB) laser consisting of alternating active and passive layers with a distributed Bragg reflector (DBR). It is shown that the threshold current density can be reduced by using the DFB action induced by alternating active and passive layers in the active region of the SE DFB laser structure, as compared to SE DBR lasers with a homogeneous active region. It is also shown that the differential quantum efficiency of the DFB laser with a DBR can be higher than that of conventional DBR lasers without increasing the threshold current density     

Selective lasing of InGaAs quantum-wire array on a V-grooved GaAssubstrate by distributed optical feedback

Distributed-feedback (DFB) lasers were fabricated by using strained InGaAs quantum-wire (QWR) arrays on V-grooved GaAs substrates as an active grating. After characterizing the luminescence from the QWRs and parasitic quantum wells (QWLs), a DFB laser cavity incorporating such a QWR array with its emission wavelength matched to the Bragg wavelength was designed and fabricated. The wavelength selectivity of the DFB cavity was found to strongly support the QWR emission, and DFB lasing from QWR gain up to 145 K has been achieved under pulsed current. The emission from the parasitic QWLs was suppressed by the DFB filtering and the loss induced by coupling to radiation modes. The DFB cavity was shown to be essential for obtaining lasing from QWRs on V-grooved substrates     

Linewidth enhancement for DFB lasers due to longitudinal field dependence in the laser cavity

To calculate the linewidth for an index-guided semiconductor laser, one usually neglects a correction factor for the spontaneous emission rate, which is introduced by the longitudinal field distribution within the laser cavity. For FabryPerot lasers with cleaved facets the correction factor is small. However, for DFB lasers this correction factor may become quite significant, yielding a linewidth enhancement for DFB laser diodes.     

InGaAs-GaAs-InGaP distributed feedback buried heterostructurestrained quantum-well lasers for high-power operation at 0.98 μm

Data are presented on device results from InGaAs-GaAs distributed feedback buried heterostructure (DFB BH) strained-quantum-well lasers with InGaP cladding layers. DFB BH lasers with a p-n InGaP current blocking junction entirely grown by a three-step MOVPE on GaAs substrates show a low laser threshold of 3.2 mA and a high output power of 41 mW with single-longitudinal-mode operation, both measured CW at RT. The monomode oscillation is obtained even at the injection current of 140 mA (44 times the laser threshold) with the side-mode suppression ratio of 35 dB and the temperature sensitivity of Bragg modes being 0.5 Å/°C measured between 20 and 40°C     

An accurate rate-equation description for DFB lasers and someinteresting solutions

Starting from the coupled-wave equations, we have derived an alternative set of rate equations which are valid for most single-section distributed feedback (DFB) lasers. These rate equations are in many respects more useful than the conventional rate equations and have also been used to derive the influence of spatial hole burning on characteristics such as the chirp, the linewidth, or the harmonic distortion. Numerical results are presented for a DFB laser with both facets cleaved, AR-coated, and for a λ/4-shifted DFB laser     

Chirp reduction of directly modulated semiconductor lasers at 10Gb/s by strong CW light injection

The influence of strong light injection on the reduction of the dynamical linewidth broadening of directly current-modulated semiconductor lasers at high bit rates is theoretically investigated and experimentally verified for 10 Gb/s NRZ pseudorandom modulation with a large current swing of 40 mA pp. Significant chirp reduction and single-mode operation are observed for bulk DFB, quantum well DFB lasers at 10 Gb/s and a weakly coupled bulk DFB laser at 8 Gb/s, so that an improvement of the transmission performance using standard monomode fibers in the 1.55 μm low-loss wavelength region can be achieved for all these laser types, where dispersion otherwise causes severe penalties for long-haul transmission. The properties of injection-locked bulk DFB and quantum well DFB lasers with respect to high bit rate modulation have been systematically studied by the use of the rate equation formalism. A dynamically stable locking range of more than 30 GHz under modulation has been found for both laser types with injection ratios higher than 0.5     

Performance characteristics of buried facet quarter-wave shifted distributed feedback lasers

The performance characteristics of quarter-wave shifted GaInAsP distributed feedback lasers emitting near 1.3 mu m are described. The quarter-wave shifted grating is fabricated on a substrate using the double-exposure holographic technique. The low reflectivity required for this quarter-wave shifted DFB laser is obtained using buried facets at both ends of the laser. The lasers have threshold current of 30 mA, quantum efficiency of 0.18 mW/mA/facet, bandwidth of 11.5 GHz at 10 mW and 10 dB chirp width of 2.5 AA under 40 mA modulation current at 5 Gbit/s.<>