钨晶须/纳米线的制备工艺原理及最新研究进展

综述了钨晶须/纳米线几种典型的制备方法及其最新研究进展,如气相沉积法、金属催化诱导法、电化学蚀刻法、模板法等,介绍了气-固、气-液-固和气-固-固生长机制及模型,分析了钨晶须/纳米线在研究和应用中存在的主要问题,指出钨晶须/纳米线生长过程中的影响因素、生长模型建立及钨晶须/纳米线的形貌、组成和产率综合调控是未来重要的研究方向.     

基于碳纳米管模板的氮化镓纳米线束合成

通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓纳米线束.对所生长的纳米结构进行了扫描电镜和X射线能谱分析,结果显示氮化镓纳米晶体可以与碳纳米管形成纳米线束状复合物.纳米线束状复合物直径为100～200 nm,长度为1.5～2.5μm,纳米线的两端呈现尖角状.由于氨气很容易吸附在碳纳米管表面,可知所获得的纳米结构的初始生长机制为碳纳米管的表面氮化.该研究也证明金属有机物化学气相沉积将是用于制造化合物纳米结构材料的一项有效的技术.     

水热合成Sb_2Se_3纳米线及其对Bi_2Te_3纳米粉末热电性能的影响

以SbCl3和Se粉为原料,水合肼(N2H4·H2O)为还原剂,采用水热法在150℃下,分别保温不同的时间合成Sb2Se3纳米粉末.通过X射线衍射(XRD)、场发射电子扫描电镜(FESEM)、透射电镜(TEM)以及高分辨透射电镜(HRTEM)等分析方法对产物的物相成分和微观形貌等进行了表征,实验结果表明保温时间达到24h时,获得产物为单相Sb2Se3纳米线晶体.根据实验结果还研究了水热合成Sb2Se3纳米线晶体可能的反应及生长机理,结果表明一维纳米线沿[001]方向生长,纳米线的形成与其独特的层状晶体结构有关.最后采用放电等离子体快速热压烧结法将水热合成的Bi2Te3纳米粉末与不同含量Sb2Se3纳米线进行复合,分析了Sb2Se3纳米线对Bi2Te3纳米材料热电性能的影响,发现复合约1at%Sb2Se3纳米线可以使Bi2Te3纳米材料热电性能有一定提高.     

硅衬底上有序氮化铝纳米线阵列的生长

在450℃反应温度下,利用无水三氯化铝与叠氮化钠在25mL的不锈钢反应釜中直接反应,成功地在硅片衬底上制备了六方单晶氮化铝（h—AlN）纳米线有序阵列。这些纳米线呈长直线状,粗细均匀,直径约为100nm,长度均在几个微米以上。所有纳米线生长方向一致,而且与硅片衬底垂直。经过分析,纳米线由气液固机制生长而成.     

蒲公英状ZnO微米球的控制组装与表征

本文用热蒸发气相沉积的方法在镀有金催化剂的锌片上成功合成了蒲公英状ZnO微米球结构。扫描电镜观察结果表明合成的ZnO微米球平均直径约5微米,表面二次生长的纳米线平均直径约20纳米,长度达几微米。透射电镜分析发现二次生长的纳米线具有单晶结构,其生长方向沿[001]方向。同时研究了沉积衬底、原材料种类和比例对合成产物形貌的影响,对合成微米球的室温光致发光性能进行了研究。合成的这种微米球结构在传感器等纳米器件领域有着潜在的应用前景。     

配合物热分解制备氮化镓纳米线及其生长机理研究

报道了利用VLS生长机制,在NH3气氛中,由配合物GaCl3·NH3在高温下热分解反应成功制备了GaN纳米线,利用X射线衍射(XRD)、高分辨电镜(HRTEM)、X射线能谱(EDS)等分析手段对产物进行了表征,并对氮化镓纳米线的VLS生长机理进行了探讨。     

基于气-液-固模式的Ⅲ-Ⅴ族一维半导体纳米线的生长研究概述

Ⅲ-Ⅴ族一维半导体纳米线由于具有独特的性能、丰富的科学内涵而被广泛应用于微机电、光电子、光伏电、传感等方面,并在未来纳米结构器件中占有重要的战略地位,近年来引起了人们极大的兴趣和关注。探索Ⅲ-Ⅴ族一维半导体纳米线新的结构调控手段,研究具有重要应用价值的Ⅲ-Ⅴ族一维半导体纳米线的可控生长方法和技术,从而获得可应用于器件和功能实现的高质量Ⅲ-Ⅴ族一维半导体纳米线是目前各研究组的主要目标。基于气-液-固模式的纳米线生长方法具有对纳米线形貌及晶体质量可控的优点,成为当前制备高质量Ⅲ-Ⅴ族一维半导体纳米线的主要生长技术。催化辅助生长是一种有金属催化剂参与的纳米线生长方式,它可以有效降低反应物裂解能量、提高材料成核质量、控制材料生长方向、提高反应效率、稳定材料晶体结构。自催化生长是指在纳米线生长过程中不添加其他物质作为催化剂,而由反应物自身起催化作用的生长。由于自催化生长在反应过程中未引入其他物质,所以生成物纯度较高。Ⅲ-Ⅴ族异质结构半导体纳米线常具有两种半导体各自不能达到的优良光电特性,其又可划分为纵向异质结构和横向异质结构。Ⅲ-Ⅴ族一维半导体纳米线除了可以在与其自身材料相同的基底表面上生长之外,还可在与其材料不同的基底表面上生长,即在异质基底表面生长。异质基底生长在材料兼容、光电集成等方面具有十分广阔的应用前景。本文对基于气-液-固模式的Ⅲ-Ⅴ族一维半导体纳米线的生长进行了综述,并对近些年基于催化辅助和自催化的纵向异质结构、横向异质结构以及异质基底的成长研究现状进行了总结,为推动Ⅲ-Ⅴ族一维半导体纳米线制备技术的发展提供了参考依据。     

Si基Au催化合成镁掺杂GaN纳米线

通过一种新奇的方法在硅衬底上成功地合成了掺杂镁的氮化镓纳米线,用金属镁粉末作为掺杂源,然后在900℃时于流动的氨气中进行氨化Ga2P3薄膜制备GaN纳米线.X射线衍射(XRD)、扫描电镜(SEM)、透射电子显微镜(TEM)、选区电子衍射(SAED)和能量弥散X射线谱(EDX)的分析结果表明,采用此方法得到的GaN纳米线为六方纤锌矿结构,纳米线的直径大约在60～100nm之间,纳米线的长约十几个微米.EDX分析表明纳米线掺杂了镁.室温下以325nm波长的光激发样品表面,发现由于镬的掺杂使GaN的发光峰有较大的蓝移.最后,简单讨论了GaN纳米线的生长机制.     

喷雾燃烧原位催化制备SnO2纳米线及其生长机理

采用喷雾燃烧的方法,以HAuCl4在高温火焰中原位分解生成的Au纳米颗粒为催化剂,以SnCl4.5H2O为锡源,简单、快速地制备高度结晶的SnO2纳米线;利用X射线衍射、透射电镜和选区电子衍射等对制备的纳米线进行表征;研究SnO2纳米线的晶格间距和晶体的生长方向,提出高温火焰快速反应过程中Au纳米颗粒催化SnO2纳米线的生长机理。结果表明,制备的SnO2纳米线为正方晶系的金红石型氧化锡单晶结构,直径为15~25 nm,长度在几百纳米到几微米之间。     

第Ⅵ族元素半导体纳米线的可控合成及其纳米电子学器件研究

采用化学液相反应,以亚硒酸或者原碲酸为原料,合成出尺寸均匀、高结晶度的硒、碲纳米线.高分辨电镜分析结果表明:合成的硒、碲纳米线均为三方晶单晶结构,生长方向沿其螺旋轴即[001]方向生长.结合光刻、电子束刻蚀技术,分别制备了硒、碲纳米线场效应晶体管器件(FET).对器件测试的结果显示:硒和碲纳米线均为P型半导体,其相应的空穴迁移率分别为30.7,70cm2V-1 s-1.这对新型纳米线电子学器件的开发应用具有重要意义.     

凝固科学技术与材料

从凝固科学与实践发展的角度介绍了当前凝固材料体系的基本框架和凝固科学主要发展阶段的基本理论。作为材料科学与工程的基本组成，凝固科学技术正在现代科学理论的基础上针对传统材料的改性提高和新材料的发展需求，以控形、控构、控性为目标开展优质铸件的定向、晶体生长、快凝、深过冷及各种新型和超常领域凝固过程的研究，并介绍了其中某些方面和展望了可能的发展趋势。     

Development and challenges of planning and scheduling for petroleum and petrochemical production

Production planning and scheduling are becoming the core of production management, which support the decision of a petrochemical company. The optimization of production planning and scheduling is attempted by every refinery because it gains additional profit and stabilizes the daily production. The optimization problem considered in industry and academic research is of different levels of realism and complexity, thus increasing the gap. Operation research with mathematical programming is a conventional approach used to address the planning and scheduling problem. Additionally, modeling the processes, objectives, and constraints and developing the optimization algorithms are significant for industry and research. This paper introduces the perspective of production planning and scheduling from the development viewpoint.     

江澳两地高校文创设计的协同研究与商业实践

目的 探索江门世遗文化的传承、发展和转化的新思路,践行国家在《粤港澳大湾区发展规划》纲要中要求江门承担与港澳地区文化创意合作与开发任务的分工。方法 与澳门高校紧密合作,开展专业培训课程,以开平碉楼为例,从人文视角开展设计研究,梳理开平碉楼的文化脉络,把世遗文化的元素和其背后的文化融入文创产品中,提升文创产品的附加值,推动当地文创产业结构的变革。结果 两地高校构建了稳定的科研团队,开设长期有效的设计培训课程,与景区建立了研究协作关系,帮助景区构建了一套产销研的商业模式。结论 以跨区域高校合作为平台,以文创产品为抓手,依托江澳两地的资源优势,可以构建江门世遗文化全新的品牌形象,最终推动开平世遗文化的活化。     

Creation and motion of dislocations and fracture in metal and silicon crystals

By making a step on one surface ( ) of a rectangular small paralellepiped copper crystal, dislocations could be created by the molecular dynamic method. The dislocation created was not a complete edge dislocation but a pair of Heidenreich-Shockley partial dislocations. Each time a dislocation was created, the stress on the surface was released. Small copper crystals having a notch were pulled (until fracture), compressed and buckled by use of the molecular dynamic method. An embedded atom potential was used to represent the interaction between atoms. Dislocations were created near the tip of the notch. A very sharp yield stress was observed. The results of high speed deformations of pure silicon small crystals using the molecular dynamics are presented. The results suggest that plastic deformation may be possible for the silicon with a high speed deformation even at room temperature. Another small size single crystal, the same size and the same surfaces, was compressed using molecular dynamic method. The surfaces are {110}, {112} and {111}. The compressed direction was [111]. It was found that silicon crystals are possible to be compressed with a high speed deformation. This may suggest that silicon may be plastically deformed with high speed deformation.     

Error and uncertainty in modeling and simulation

This article develops a general framework for identifying error and uncertainty in computational simulations that deal with the numerical solution of a set of partial differential equations (PDEs). A comprehensive, new view of the general phases of modeling and simulation is proposed, consisting of the following phases: conceptual modeling of the physical system, mathematical modeling of the conceptual model, discretization and algorithm selection for the mathematical model, computer programming of the discrete model, numerical solution of the computer program model, and representation of the numerical solution. Our view incorporates the modeling and simulation phases that are recognized in the systems engineering and operations research communities, but it adds phases that are specific to the numerical solution of PDEs. In each of these phases, general sources of uncertainty, both aleatory and epistemic, and error are identified. Our general framework is applicable to any numerical discretization procedure for solving ODEs or PDEs. To demonstrate this framework, we describe a system-level example: the flight of an unguided, rocket-boosted, aircraft-launched missile. This example is discussed in detail at each of the six phases of modeling and simulation. Two alternative models of the flight dynamics are considered, along with aleatory uncertainty of the initial mass of the missile and epistemic uncertainty in the thrust of the rocket motor. We also investigate the interaction of modeling uncertainties and numerical integration error in the solution of the ordinary differential equations for the flight dynamics.     

Density and viscosity of tetralin and trans-decalin

New measurements are reported for the density and viscosity of tetralin and trans-decalin. The density was determined from room temperature to 60°C for tetralin and to 95°C for trans-decalin. The kinematic viscosity was measured up to temperatures slightly above 100°C. Our results improve upon the values recommended by the American Petroleum Institute for these liquids.     

The Candela and Photometric and Radiometric Measurements

The national measurement system for photometric and radiometric quantities is presently based upon techniques that make these quantities traceable to a high-accuracy cryogenic radiometer. The redefinition of the candela in 1979 provided the opportunity for national measurement laboratories to base their photometric measurements on optical detector technology rather than on the emission from high-temperature blackbody optical sources. The ensuing technical developments of the past 20 years, including the significant improvements in cryogenic radiometer performance, have provided the opportunity to place the fundamental maintenance of photometric quantities upon absolute detector based technology as was allowed by the 1979 redefinition. Additionally, the development of improved photodetectors has had a significant impact on the methodology in most of the radiometric measurement areas. This paper will review the status of the NIST implementation of the technical changes mandated by the 1979 redefinition of the candela and its effect upon the maintenance and dissemination of optical radiation measurements.     

SMC／BMC的回收与再利用

SMC／BMC废弃物对工业及环境造成了很大影响，指出了SMC／BMC回收再利用的紧迫性。通过对目前国际上SMC／BMC回收再利用的3种典型途径优缺点的对比，参照国外SMC／BMC回收再利用的先进方法，对我国SMC／BMC回收再利用提供了可行的建议．