Stabilization of the 108 K superconducting phase in the Bi0.7Pb0.3SrCaCu1.8Oy system

Samples having the nominal composition Bi_0.7Pb_0.3SrCaCu_1.8O _y , were prepared by a solid-state reaction and characterized by energy-dispersive x-ray microanalysis, resistivity measurements, and magnetically modulated microwave absorption (MAMMA). Longer annealing times resulted in more homogeneous samples having a single superconducting transition to zero resistance at 108 and 105 K at 0.1 and 1 mA, respectively. The MAMMA measurements clearly show differences in sample homogeneity with different annealing times.     

Metastable states of the 2223 phase in the Bi(Pb)SrCaCuO system

By the magnetically modulated microwave absorption method (MAMMA) we observed the modifications induced by different calcination temperatures (between 830°C and 870°C) on the 2223 phase formed in a system sintered at (855±5)°C with the starting composition Bi_1.7Pb_0.3Sr₂Ca₂Cu₃O _y . The presence of the 2223 phase in almost distinct states (consequently, multiple 2223 phases) in the same sample was observed. As the calcination temperature was increased up to 850°C, the highest temperature state of the 2223 phase intensified. Higher calcination temperatures resulted in the enhancement of other lower-temperature states. The homogeneity of the 2223 phase was greatly improved by annealing the samples at, 800°C for 5 min in a flowing nitrogen atmosphere. We labeled as metastable the lower-temperature states having excess oxygen, which, by easily losing the supplementary oxygen under the above annealing procedure, were shifted to higher temperatures.     

Thermal stability of sputtered zirconium oxide films

In this work, the effect of post-growth annealing on the structural and optical properties of sputtered zirconium oxide films has been investigated. The temperature dependence of structure, density, and optical constants has been systematically studied by X-ray diffraction, X-ray reflectometry, atomic force microscopy (AFM) and optical spectroscopy. X-ray diffraction studies show no variation in the crystalline phase upon annealing except grain growth. X-ray reflectivity measurements determine a density increase of approximately 11% and a simultaneous thickness reduction of 10% upon annealing. The surface roughness of the films increases upon annealing as determined by XRR and confirmed by AFM measurements. Optical spectroscopy measurements confirm that the refractive index n of the films decreases with increasing annealing temperature. At the same time the optical band gap E_g of the films increases from 4.58 to 4.97 eV annealing at 900°C. The surprising decrease of refractive index upon annealing is attributed to both the intermixing of Si with ZrO₂ and the increasing surface roughness of the films.     

Structural and optical properties of GaN-based nanocrystalline thin films

We study the effect of annealing on structure, morphology and optical properties of nanocrystalline films of GaN, GaN:O and GaN:Mn prepared by ion assisted deposition on silicon, quartz and glassy carbon substrates. Blisters and holes having diameters proportional with the thickness of the film were observed in GaN:O deposited on silicon and glassy carbon. The Mn excess in GaN:Mn turns through annealing into Mn_xN_y islands. The degree of short- and intermediate-range order in the films was investigated by micro-Raman spectroscopy, extending to about 3 nm for gallium oxynitride films annealed to 973 K and to more than 10 nm in GaN samples. A diminished oxygen content following the annealing procedures on GaN:O samples is noticed from the reduced intensity of the oxygen mode at 1000 cm^− 1 in the Raman spectra. This observation is supported with X-ray photoemission spectroscopy measurements. The presence of oxygen at concentrations above 15at.% in the films leads to an abrupt nanocrystalline-amorphous transition.     

Annealing behavior of light-induced metastable defects in a-Si1−x C x : H

We have used the room-temperature constant-photocurrent method and dark-conductivity measurements to study the annealing kinetics of light-induced metastable defects in a set of a-Si_1?x C _x : H (x≤0.11) films. Light-induced metastable defects created at room temperature started annealing at higher temperatures for alloys with high carbon contents. The annealing activation-energy distribution function was calculated to be a narrow Gaussian peaked at about 1 eV for the unalloyed sample. For the alloys, the peak position shifts to higher energies with increasing carbon content. The variation of the dark conductivity of the samples was measured as a function of annealing time and annealing temperature. A similarity between the observed increase in the dark conductivity and the annealing rate of light-induced defects was identified.     

Effect of rapid thermal annealing time on Au/SiOx film prepared by hot wire assisted plasma enhanced chemical vapour deposition technique

In this study, nanocomposite material consisting of silicon suboxide (SiO_x) film embedded with gold nanoparticles (Au NPs) was synthesized using hybrid technique combining hot wire evaporation and plasma enhanced chemical vapour deposition (PECVD) method. As prepared Au/SiO_x films were rapid thermal annealed at constant temperature of 800 °C for different annealing times from 30 to 120 s. The use of tungsten filament for Au evaporation allowed the effective reduction of the silicon content. Depth profiling analysis confirmed the embedded in structure of Au/SiO_x film. FESEM, UV/VIS/NIR and PL spectroscopy were utilized to study the structural and optical properties of annealed Au/SiO_x film for different times. Embedded Au NPs diffused towards the surface of SiO_x film agglomerate and increased in size with an increase in annealing time. Localized surface plasmon resonance (LSPR) peak induced by Au NPs in SiO_x, which is dependent on annealing time, was clearly observed in optical spectra. Intensity and position of the PL peak located at 580 nm experienced a decrease and red-shift, as annealing time increased.     

Preparation of New Composite Magnetocaloric Compounds by Modifying the Annealing Temperature of La0.8Ca0.2?x □ x MnO3 Perovskite

In this paper, a new method to broaden the range of the magnetic refrigeration temperature by changing the annealing temperature was proposed. Series of La_0.8Ca_0.2?x ?? _x MnO₃(0.00??x??0.20) compounds were prepared by solid-state reaction and annealed firstly at a temperature of 1473 K (S1) and then at 1073 K (S2). Morphologic and structural studies have revealed that the decrease of the annealing temperature modifies the grain size and the structure of these compounds. The magnetic measurements have shown that the annealing at low temperature (1073 K) increases the magnetization and enhances the one-electron bandwidth, which induces an increase of the Curie temperature for 183 K (S1) to 241 K (S2) for the x=0.00 sample. The magnetocaloric investigation has exposed that the decrease of the annealing temperature induces a change from a second-order magnetic phase transition to first-order one for S1 and S2 compounds, respectively. Also, we have found that the Relative Cooling Power (RCP) factor remains almost constant as a function of calcium-deficiency concentration (x) and the annealing temperature. Finally, we have deduced that we can use composite magnetocaloric compounds, exploiting a mixing of the same compounds annealed at two different temperatures (1473 K; S1) and (1073?K; S2), for refrigeration over the temperature range 175?C264?K.     

Effects of annealing on the photoluminescence of ZnSe nanorods coated with Au

Au-functionalized ZnSe nanorods were synthesized by the thermal evaporation of ZnSe powder followed by Au sputter-deposition and thermal annealing. Photoluminescence (PL) showed that the intensity of near-band edge (NBE) emission of ZnSe nanorods was enhanced remarkably by Au-coating and annealing in a H₂ atmosphere. The intensity ratio of NBE emission to the deep level emission, I_NBE/I_DL of Au-coated ZnSe nanorods after annealing in a H₂ atmosphere was ∼68 times higher than that of the pristine (unannealed, uncoated) ZnSe nanorods. The increase in I_NBE/I_DL might be due to a combination of carrier transfer from the defect level to the Fermi level of Au nanoparticles, surface plasmon resonance in Au nanoparticles and hydrogen passivated deep level defects.     

Influence of annealing treatments for ZnO-doped Zr0.8Sn0.2TiO4 thin films by RF magnetron sputtering

Zirconium tin titanium oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fixed rf power of 300 W, a substrate temperature of 450 °C, a deposition pressure of 5 mTorr and an Ar/O₂ ratio of 100/0 with various annealing temperatures and annealing times. Electrical properties and microstructures of 1 wt.% ZnO-doped (Zr_0.8Sn_0.2)TiO₄ thin films prepared by rf magnetron sputtering on n-type Si(100) substrates at different annealing temperatures (500 °C-700 °C) and annealing times (2 h-6 h) have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were sensitive to the treatment conditions such as annealing temperature and annealing time. At an annealing temperature of 600 °C and an annealing time of 6 h, the ZnO-doped (Zr_0.8Sn_0.2)TiO₄ thin films possess a dielectric constant of 46 (at f = 10 MHz), a dissipation factor of 0.059 (at f = 10 MHz), and a low leakage current density of 3.8 × 10^− 9 A/cm² at an electrical field of 1 kV/cm.     

The charge-transfer property and the performance of dye-sensitized solar cells of nitrogen doped zinc oxide

In this study two methods, namely the solution and annealing methods, were used to prepare nitrogen-doped ZnO. The X-ray photoelectron spectroscopy (XPS) was performed to identify the composition and chemical states of N-doped ZnO. The N doping by the solution method was found to effectively decrease the acceptor effects. Surface photovoltage measurements (SPS) revealed a redshift of the threshold wavelength for the N-doped ZnO. And the recombination of photoinduced electron–hole pairs in this semiconductor material was obviously suppressed. The N-doped ZnO (solution method) exhibits the best performances among all the materials, even superior to N-doped ZnO (annealing method). Its J_sc and η values (9.35 mA/cm² and 2.64%) have enhanced by several times compared with un-doped ZnO (J_sc, 2.85 mA/cm²; η, 0.67%). The overall conversion efficiency of ZnO-based dye-sensitized solar cells was successfully improved by the N doping.     

Microwave absorption in BSCCO superconductor: Influence of different thermal treatments on oxygen stoichiometry

Modification induced by thermal treatments in different gaseous environments (nitrogen, helium, and oxygen), on the 2223 phase formatted in two BI(?B)SrCaCuO systems, were investigated by the microwave methods DMA (direct microwave absorption) and MAMMA (magnetically modulated microwave absorption). Si_1.7Pb_0.3Sr₂Ca₂Cu₃O_y and Bi_1.7Pb_0.3Sr₂ Ca_2.5Cu_3.5O_y systems were obtained by different preparation techniques, and as a result they exhibit small differences in the canon stoichiometry that affect the oxygen stoichiometry and their change under the same annealing conditions. The changes observed were attributed to the oxygen variation around the optimum concentration and. further the deviation of the oxygen content from this optimum value reduces the critical temperature of the 2223 phase.     

Substrate and annealing temperature effects on the optical and electrical properties of Ge20Te80 films

Ge₂₀Te₈₀ films were deposited by thermal evaporation technique onto chemically cleaned glass substrates kept at different substrate temperatures (T_sub=203, 233 and 273 K). The optical data indicated that the width of the localized states tails (E_e) increases while the optical gap (E_o) decreases with increasing the substrate and annealing temperature of the investigated films. From the electrical measurements, the activation energy for conduction and the density of localized states at the Fermi energy, N(E_F), were obtained. The effects of the substrate and annealing temperature on the width of localized states tails and on the density of localized states at the Fermi level have enhanced each other. The changes in the optical and electrical properties are correlated with the amorphous-crystalline transformations.     

Fabrication of TiO2-based transparent conducting oxide on glass and polyimide substrates

We report on preparation and properties of anatase Nb-doped TiO₂ transparent conducting oxide films on glass and polyimide substrates. Amorphous Ti_0.96Nb_0.04O₂ films were deposited at room temperature by using sputtering, and were then crystallized through annealing under reducing atmosphere. Use of a seed layer substantially improved the crystallinity and resistivity (ρ) of the films. We attained ρ = 9.2 × 10^− 4 Ω cm and transmittance of ~ 70% in the visible region on glass by annealing at 300 °C in vacuum. The minimum ρ of 7.0 × 10^− 4 Ω cm was obtained by 400 °C annealing in pure H₂.     

Effect of annealing on EPR spectra of Ti-Si-C-N samples

Two nanocrystalline samples of TiC+SiC+20%C (sample 1) and Si₃N₄+Si(C,N)+Ti(C,N)+1%C (sample 2) were prepared by non-hydrolytic sol-gel method. The latter sample was produced from sample 1, by subjecting it to additional annealing at high temperature. XRD measurements showed the presence of aggregates of cubic SiC+TiC nanoparticles (10 to 30 nm in size). In both samples, a very narrow electron paramagnetic resonance (EPR) line originating from localized magnetic centers was centered at g _eff??2. At T = 130 K, we registered the linewidths ??H _pp = 1.41(2) G and ??H _pp = 2.92(2) G for the sample without and with thermal annealing, respectively. For the non-annealed sample, the resonance line was fitted by a Lorentzian line in the low temperature range, and by a Dysonian line above 70 K, which indicates a significant change in electrical conductivity. Therefore, thermal annealing can significantly improve the transport properties of samples. An analysis of the temperature dependence of the EPR parameters (g-factor, linewidth, integrated intensity) showed that thermal annealing has a significant impact on the reorientation processes of localized magnetic centers.     

Thermal stability of amorphous molybdenum trioxide films prepared at different oxygen partial pressures by reactive DC magnetron sputtering

Thin films of MoO₃ were prepared on quartz and Si (1 0 0) substrates by reactive dc magnetron sputtering of a Mo target in an oxygen and argon atmosphere. The structural and optical changes induced in the films due to post-growth annealing have been systematically studied by Rutherford backscattering (RBS), X-ray diffraction (XRD), X-ray reflectivity (XRR) and by optical methods. RBS studies reveal no change in composition of the films upon annealing at high temperatures. Grazing angle XRD studies show that the as-deposited films are amorphous and crystallize to β-MoO₃ phase with small contribution of α-MoO₃ upon annealing at 300 °C. The film prepared at 0.40 Pa transforms to α-MoO₃ upon annealing at 650 °C, while the film deposited at 0.19 Pa still has some β-MoO₃ phase contribution. XRR measurements reveal that the film thickness decreases upon annealing with simultaneous increase of film density. The surface roughness of the films strongly increases after crystallization. The contraction of the film deposited at 0.40 Pa is much greater than the contraction of the film prepared at 0.19 Pa. The mass variation of the film deposited at 0.19 Pa and that deposited at 0.40 Pa are completely different. The optical properties of MoO₃ films deposited at 0.19 and 0.40 Pa are changed strongly by annealing.     

Effects of thermal annealing on the optical,spectroscopic, and structural properties of tris (8-hydroxyquinolinate) gallium films grown on quartz substrates

In this study we report the optical, spectroscopic, and structural properties of vacuum deposited tris (8-hydroxyquinolinate) gallium film upon thermal annealing in the temperature range from 85 °C to 255 °C under a flowing nitrogen gas for 10 min. The optical UV–vis–NIR and luminescence spectroscopy measurements were performed to estimate the absorption bands, optical energy gap (E_g), and photoluminescence (PL) of the films. Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) techniques were used to probe the spectroscopic and structural nature of the films. We show that, by annealing the films from 85 °C to 235 °C, it is possible to achieve an enhanced absorption and increased photoluminescence to five times stronger than that of the pristine film. The PL quenching at 255 °C was attributed to the presence of plainer chains allow easy going for excitons to a long distance due to the crystalline region formation of α-Gaq3 polymorph. The reduction in E_g and infrared absorption bands upon annealing were referred to the enhancement in π–π interchain interaction and conformational changes by re-arrangement of the Gaq3 quinolinate ligands, respectively. Stokes shift for the films were observed and calculated. From the differential scanning calorimetry, DSC measurements, higher glass transition temperature was observed for Gaq3 (T_g = 182 °C) compared to that of Alq3 (T_g = 173 °C), which suggests the existence of stronger dipolar interaction in Gaq3 due to the Ga³⁺ cation effect, in comparison to that of Alq3.     

Effects of thermal annealing on the performance of Al/ZnO nanorods/Pt structure ultraviolet photodetector

ZnO nanorod arrays were fabricated on ZnO coated glass substrate by hydrothermal method. Schottky barrier ultraviolet photodetectors (PDs) were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. It is illustrated that Schottky contacts at the electrode/ZnO NRs interface were formed at the annealing temperature of 300 °C and above. When annealing temperature was up to 300 °C, the performance of the PDs was improved with the great decrease of response and recovery times. At the forward bias of 2 V, the Schottky contact PDs showed the biggest responsivity and the best detectivity at the annealing temperature of 300 °C. For annealing temperature at 300 °C and above, the responsivity decreases with increasing annealing temperature and the ratio of detectivity (D₂₅₄^* to D₅₄₆^*) was calculated as high as 10³ for all PDs annealed at 300 °C and above.     

Influence of post-deposition annealing on the microstructure and properties of Ga2O3:Mn thin films deposited by RF planar magnetron sputtering

Thin films of Ga₂O₃:Mn have been deposited on silicon (100) substrates without intentional heating by radio frequency (RF) planar magnetron sputtering from a Mn-doped Ga₂O₃ target in an oxygen-argon mixture atmosphere. Microstructure and properties of the deposited Ga₂O₃:Mn films were systematically investigated as a function of the post-deposition annealing temperature in the range between 500 °C and 1200 °C. X-ray diffraction (XRD) measurements showed that the as-deposited Ga₂O₃:Mn films were of an amorphous structure in nature. The Ga₂O₃:Mn films became crystalline by the post-deposition annealing above 800 °C and the crystallinity of the films was continuously improved up to the annealing temperature of 1200 °C. It was shown that the annealed Ga₂O₃:Mn films possessed a monoclinic β-Ga₂O₃ phase having a textured structure with (400) and (?401) crystallographic planes oriented preferentially parallel to the substrate surface. The lattice parameters of the monoclinic β-Ga₂O₃ phase in the 1200 °C annealed Ga₂O₃:Mn films were measured to be a = 12.152 Å, b = 3.043 Å, and c = 5.785 Å.     

Effect of Low Temperature Annealing on the Magnetic Properties of Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As/GaAs Superlattices

We have studied the effect of low-temperature (LT) annealing on the properties of Ga_1?xMn _x As/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (H_C) three times larger than the undoped SL, and showed a much more robust remanent magnetization (M_r). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of M_r in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.     

Field emission enhancement of carbon nitride films by annealing with different durations

Magnetron sputtered carbon nitride films (CN_x) were annealed at 750 °C for periods from 30 to 120 min. Effects of annealing with different durations on the field emission of CN_x films were investigated and related to the variations of chemical bonding and surface morphology induced by annealing. The results show that annealing effectively enhances field emission ability of the CN_x films and that the threshold field was lowered from 13 to 5 V/μm. The measurements of Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) indicated that annealing leads to a loss of N content and to formation of more graphite-like sp² C clusters in the films, and simultaneously the film surface becomes rougher after annealing, all of which is attributed to the increased film field emission. A large number of sp² C clusters with good conductivity enables tunneling in the film, making electron emission easier, and moreover, a rougher surface also improves the field enhancement factor of the films. However, continuing to increase annealing time eventually lowers the field emission of the films.